2005-2013 Microchip Technology Inc.
DS21938B-page 1
TC4426M/TC4427M/TC4428M
Features
• High Peak Output Current – 1.5A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability – 1000 pF
in 25 ns (typ.)
• Short Delay Times – 40 ns (typ.)
• Matched Rise and Fall Times
• Low Supply Current:
- With Logic ‘1’ Input – 4 mA
- With Logic ‘0’ Input – 400 µA
• Low Output Impedance – 7
• Latch-Up Protected: Will Withstand 0.5A Reverse
Current
• Input: Will Withstand Negative Inputs Up to 5V
• ESD Protected – 4 kV
• Pin-Compatible with the TC426M/TC427M/
TC428M, TC4426AM/TC4427AM/TC4428AM
Devices
• Wide Operating Temperature Range:
- -55°C to +125°C
• See TC4426/TC4427/TC4428 data sheet
(DS21422) for additional temperature range and
packaging offerings
Applications
• Switch-mode Power Supplies
• Line Drivers
• Pulse Transformer Drive
General Description
The TC4426M/TC4427M/TC4428M are improved
versions of the earlier TC426M/TC427M/TC428M
family of MOSFET drivers. The TC4426M/TC4427M/
TC4428M devices have matched rise and fall times
when charging and discharging the gate of a MOSFET.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin.
They can accept, without damage or logic upset, up to
500 mA of reverse current (of either polarity) being
forced back into their outputs. All terminals are fully
protected against Electrostatic Discharge (ESD) up to
4 kV.
The TC4426M/TC4427M/TC4428M MOSFET drivers
can easily charge/discharge 1000 pF gate
capacitances in under 30 ns and provide low enough
impedances in both the on and off states to ensure the
MOSFET's intended state will not be affected, even by
large transients.
The TC4426AM/TC4427AM/TC4428AM family of
devices are also compatible drivers. The TC4426AM/
TC4427AM/TC4428AM devices have matched
leading and falling edge input-to-output delay times, in
addition to the matched rise and fall times of the
TC4426M/TC4427M/TC4428M devices.
Package Types
8-Pin CERDIP
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
V
DD
T
C
4426
M
T
C
4427
M
TC4426M TC4427M
NC
OUT A
OUT B
V
DD
TC4428M
NC
OUT A
OUT B
V
DD
T
C
4428
M
1.5A Dual High-Speed Power MOSFET Drivers
TC4426M/TC4427M/TC4428M
DS21938B-page 2
2005-2013 Microchip Technology Inc.
Functional Block Diagram
Effective
Input C = 12 pF
(Each Input)
TC4426M/TC4427M/TC4428M
(1)
Output
Input
GND
(2)
V
DD
300 mV
4.7V
Inverting
Non-Inverting
Note 1: The TC4426M has two inverting drivers; the TC4427M has two non-inverting drivers;
the TC4428M has one inverting and one non-inverting driver.
2: Ground any unused driver input.
2005-2013 Microchip Technology Inc.
DS21938B-page 3
TC4426M/TC4427M/TC4428M
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B .......... (V
DD
+ 0.3V) to (GND – 5V)
Storage Temperature Range .........................-65°C to +150°C
Maximum Junction Temperature ................................. +150°C
† Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, T
A
= +25ºC with 4.5V
V
DD
18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage
V
IH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
V
IL
—
—
0.8
V
Input Current
I
IN
-1.0
—
+1.0
µA
0V
V
IN
V
DD
Output
High Output Voltage
V
OH
V
DD
– 0.025
—
—
V
DC TEST
Low Output Voltage
V
OL
—
—
0.025
V
DC TEST
Output Resistance
R
O
—
7
10
I
OUT
= 10 mA, V
DD
= 18V
Peak Output Current
I
PK
—
1.5
—
A
V
DD
= 18V
Latch-Up Protection
Withstand Reverse Current
I
REV
—
>0.5
—
A
Duty cycle
2%, t 300 µs
V
DD
= 18V
Switching Time (Note 1)
Rise Time
t
R
—
19
30
ns
Figure 4-1
Fall Time
t
F
—
25
30
ns
Figure 4-1
Delay Time
t
D1
—
20
30
ns
Figure 4-1
Delay Time
t
D2
—
40
50
ns
Figure 4-1
Power Supply
Power Supply Current
I
S
—
—
—
—
4.5
0.4
mA
V
IN
= 3V (Both inputs)
V
IN
= 0V (Both inputs)
Note 1:
Switching times ensured by design.
TC4426M/TC4427M/TC4428M
DS21938B-page 4
2005-2013 Microchip Technology Inc.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V
V
DD
18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage
V
IH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
V
IL
—
—
0.8
V
Input Current
I
IN
-10
—
+10
µA
0V
V
IN
V
DD
Output
High Output Voltage
V
OH
V
DD
– 0.025
—
—
V
DC Test
Low Output Voltage
V
OL
—
—
0.025
V
DC Test
Output Resistance
R
O
—
9
12
I
OUT
= 10 mA, V
DD
= 18V
Peak Output Current
I
PK
—
1.5
—
A
V
DD
= 18V
Latch-Up Protection
Withstand Reverse Current
I
REV
—
>0.5
—
A
Duty cycle
2%, t 300 µs
V
DD
= 18V
Switching Time (Note 1)
Rise Time
t
R
—
—
40
ns
Figure 4-1
Fall Time
t
F
—
—
40
ns
Figure 4-1
Delay Time
t
D1
—
—
40
ns
Figure 4-1
Delay Time
t
D2
—
—
60
ns
Figure 4-1
Power Supply
Power Supply Current
I
S
—
—
—
—
8.0
0.6
mA
V
IN
= 3V (Both inputs)
V
IN
= 0V (Both inputs)
Note 1:
Switching times ensured by design.
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range (M)
T
A
-55
—
+125
ºC
Maximum Junction Temperature
T
J
—
—
+150
ºC
Storage Temperature Range
T
A
-65
—
+150
ºC
Package Thermal Resistances
Thermal Resistance, 8L-CERDIP
JA
—
150
—
ºC/W
2005-2013 Microchip Technology Inc.
DS21938B-page 5
TC4426M/TC4427M/TC4428M
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25ºC with 4.5V
V
DD
18V.
FIGURE 2-1:
Rise Time vs. Supply
Voltage.
FIGURE 2-2:
Rise Time vs. Capacitive
Load.
FIGURE 2-3:
Rise and Fall Times vs.
Temperature.
FIGURE 2-4:
Fall Time vs. Supply
Voltage.
FIGURE 2-5:
Fall Time vs. Capacitive
Load.
FIGURE 2-6:
Propagation Delay Time vs.
Supply Voltage.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
t RISE
(nsec)
4
6
8
10
12
14
16
18
100 pF
470 pF
2200 pF
1500 pF
100
1000 pF
80
60
40
20
0
VDD (V)
100
1000
10,000
C (pF)
LOAD
5V
10V
15V
100
80
60
40
20
0
t RISE
(nsec)
TIME (nsec)
tRISE
TEMPERATURE (˚C)
C = 1000 pF
LOAD
V = 17.5V
DD
60
–55 –35
5
25
45
65
85
105 125
–15
tFALL
50
40
30
20
10
t FALL
(nsec)
4
6
8
10
12
14
16
18
100 pF
470 pF
1000 pF
2200 pF
1500 pF
100
80
60
40
20
0
VDD (V)
100
1000
10,000
5V
10V
C (pF)
LOAD
100
80
60
40
20
0
t FALL
(nsec)
15V
20
25
30
35
40
45
50
55
60
65
70
75
80
4
6
8
10
12
14
16
18
V
DD
(V)
Pr
opa
gation D
e
la
y (nse
c)
t
D1
t
D2
C
LOAD
= 1000 pF
V
IN
= 5V
TC4426M/TC4427M/TC4428M
DS21938B-page 6
2005-2013 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25ºC with 4.5V
V
DD
18V.
FIGURE 2-7:
Propagation Delay Time vs.
Input Amplitude.
FIGURE 2-8:
Supply Current vs. Supply
Voltage.
FIGURE 2-9:
Output Resistance (R
OH
) vs.
Supply Voltage.
FIGURE 2-10:
Propagation Delay Time vs.
Temperature.
FIGURE 2-11:
Supply Current vs.
Temperature.
FIGURE 2-12:
Output Resistance (R
OL
) vs.
Supply Voltage.
10
15
20
25
30
35
40
45
50
55
60
0
1
2
3
4
5
6
7
8
9
10
11
12
Input Amplitude (V)
P
ropa
gat
ion
D
e
lay
(ns
ec)
t
D1
t
D2
C
LOAD
= 1000 pF
V
DD
= 12V
4
I (mA) QUIESCENT
18
6
8
10
12
14
16
0.1
BOTH INPUTS = 1
BOTH INPUTS = 0
V
DD
1
4
6
8
10
12
14
16
18
V
DD
R
DS(ON)
(
Ω
)
20
25
15
10
8
5
WORST CASE @ TJ = +150 C
TYP @ TA = +25 C
10
15
20
25
30
35
40
45
-55
-35
-15
5
25
45
65
85
105 125
Temperature (ºC)
D
e
lay Tim
e
(nsec)
t
D1
t
D2
C
LOAD
= 1000 pF
V
IN
= 5V
V
DD
= 18V
TA ( C)
I QUIESCENT
(mA)
4.0
3.5
3.0
2.5
2.0
–55 –35 –15
5
25
45
65
85
105 125
V = 18V
DD
BOTH INPUTS = 1
4
6
8
10
12
14
16
18
20
V
DD
25
15
10
8
5
WORST CASE @ TJ = +150 C
TYP @ TA = +25 C
R
DS(ON)
(
Ω
)
2005-2013 Microchip Technology Inc.
DS21938B-page 7
TC4426M/TC4427M/TC4428M
Note: Unless otherwise indicated, T
A
= +25ºC with 4.5V
V
DD
18V.
FIGURE 2-13:
Supply Current vs.
Capacitive Load.
FIGURE 2-14:
Supply Current vs.
Capacitive Load.
FIGURE 2-15:
Supply Current vs.
Capacitive Load.
FIGURE 2-16:
Supply Current vs.
Frequency.
FIGURE 2-17:
Supply Current vs.
Frequency.
FIGURE 2-18:
Supply Current vs.
Frequency.
60
100
1000
10,000
I SUPPLY
(mA)
2 MHz
600 kHz
200 kHz
20 kHz
900 kHz
C (pF)
LOAD
V = 18V
DD
50
40
30
20
10
0
100
1000
10,000
2 MHz
600 kHz
200 kHz
20 kHz
900 kHz
V = 12V
DD
C (pF)
LOAD
60
50
40
30
20
10
0
I SUPPLY
(mA)
100
1000
10,000
2 MHz
200 kHz
20 kHz
600 kHz
900 kHz
V = 6V
DD
C (pF)
LOAD
60
50
40
30
20
10
0
I SUPPLY
(mA)
10
100
1000
FREQUENCY (kHz)
1000 pF
2200 pF
V = 18V
DD
100 pF
60
50
40
30
20
10
0
I SUPPLY
(mA)
10
100
1000
FREQUENCY (kHz)
1000 pF
2200 pF
100 pF
V = 12V
DD
60
50
40
30
20
10
0
I SUPPLY
(mA)
10
100
1000
FREQUENCY (kHz)
1000 pF
2200 pF
100 pF
V = 6V
DD
60
50
40
30
20
10
0
I SUPPLY
(mA)
TC4426M/TC4427M/TC4428M
DS21938B-page 8
2005-2013 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25ºC with
4.5V
V
DD
18V.
FIGURE 2-19:
Crossover Energy vs.
Supply Voltage.
4
A • sec
18
6
8
10
12
14
16
8
7
6
5
4
3
2
10
–9
10
–8
9
V
DD
Note:
The values seen in this graph represent the
loss seen by both drivers in a package
during one complete cycle. For a single
driver, divide the stated values by 2. For a
single transition of a single driver, divide
the stated value by 4.
2005-2013 Microchip Technology Inc.
DS21938B-page 9
TC4426M/TC4427M/TC4428M
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
3.1
Inputs A & B (IN A and IN B)
MOSFET drivers IN A & B are high-impedance, TTL/
CMOS-compatible inputs. These inputs also have
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
3.2
Ground (GND)
GND is the device return pin. The ground pin(s) should
have a low-impedance connection to the bias supply
source return. High peak currents will flow out of the
ground pin(s) when the capacitive load is being
discharged.
3.3
Output A & B (OUT A and OUT B)
MOSFET drivers OUT A & B are low-impedance,
CMOS push-pull style outputs. The pull-down and pull-
up devices are of equal strength, making the rise and
fall times equivalent.
3.4
Supply Input (V
DD
)
The V
DD
input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V with respect to the ground
pin. The V
DD
input should be bypassed with local
ceramic capacitors. The value of these capacitors
should be chosen based on the capacitive load that is
being driven. A value of 1.0 µF is suggested.
8-Pin
CERDIP
Symbol
Description
1
NC
No connection
2
IN A
Input A
3
GND
Ground
4
IN B
Input B
5
OUT B
Output B
6
V
DD
Supply input
7
OUT A
Output A
8
NC
No connection
TC4426M/TC4427M/TC4428M
DS21938B-page 10
2005-2013 Microchip Technology Inc.
4.0
APPLICATIONS INFORMATION
FIGURE 4-1:
Switching Time Test Circuit.
C
L
= 1000 pF
0.1 µF
4.7 µF
Inverting Driver
Non-Inverting Driver
Input
V
DD
= 18V
Input
Output
t
D1
t
F
t
R
t
D2
Input: 100 kHz,
square wave,
t
RISE
= t
FALL
10 ns
Output
Input
Output
t
D1
t
F
t
R
t
D2
+5V
10%
90%
10%
90%
10%
90%
V
DD
0V
90%
10%
10%
10%
90%
+5V
V
DD
0V
0V
0V
90%
3
2
7
6
4
5