2005-2013 Microchip Technology Inc.
DS21934B-page 1
TC4421M/TC4422M
Features
• High Peak Output Current: 9A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Continuous Output Current: 2A Max
• Fast Rise and Fall Times:
- 30 ns with 4,700 pF Load
- 180 ns with 47,000 pF Load
• Short Propagation Delays: 30 ns (typ)
• Low Supply Current:
- With Logic ‘1’ Input – 200 µA (typ)
- With Logic ‘0’ Input – 55 µA (typ)
• Low Output Impedance: 1.4
(typ)
• Latch-Up Protected: Will Withstand 1.5A Output
Reverse Current
• Input: Will Withstand Negative Inputs Up To 5V
• Pin-Compatible with the TC4420M/TC4429M
6A MOSFET Driver
• Wide Operating Temperature Range:
- -55°C to +125°C
• See TC4421/TC4422 Data Sheet (DS21420) for
additional temperature range and package
offerings
Applications
• Line Drivers for Extra Heavily-Loaded Lines
• Pulse Generators
• Driving the Largest MOSFETs and IGBTs
• Local Power ON/OFF Switch
• Motor and Solenoid Driver
General Description
The TC4421M/TC4422M are high-current buffer/
drivers capable of driving large MOSFETs and IGBTs.
They are essentially immune to any form of upset,
except direct overvoltage or over-dissipation. They
cannot be latched, under any conditions, within their
power and voltage ratings. These parts are not subject
to damage or improper operation when up to 5V of
ground bounce is present on their ground terminals.
They can accept, without damage or logic upset, more
than 1A inductive current of either polarity being forced
back into their outputs. In addition, all terminals are fully
protected against up to 4 kV of electrostatic discharge.
The TC4421M/TC4422M inputs may be driven directly
from either TTL or CMOS (3V to 18V). In addition,
300 mV of hysteresis is built into the input, providing
noise immunity and allowing the device to be driven
from slowly rising or falling waveforms.
Package Types
8-Pin CERDIP
1
2
3
4
V
DD
5
6
7
8
OUTPUT
GND
V
DD
INPUT
NC
GND
OUTPUT
TC
44
21M
TC
44
22M
Note:
Duplicate pins must both be connected for
proper operation.
TC4421M TC4422M
V
DD
OUTPUT
GND
OUTPUT
9A High-Speed MOSFET Drivers
TC4421M/TC4422M
DS21934B-page 2
2005-2013 Microchip Technology Inc.
Functional Block Diagram
Effective
Input
Output
Input
GND
V
DD
300 mV
4.7V
TC4421M
C = 25 pF
TC4422M
Inverting
Non-Inverting
2005-2013 Microchip Technology Inc.
DS21934B-page 3
TC4421M/TC4422M
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage ..................................................... +20V
Input Voltage .................... (V
DD
+ 0.3V) to (GND – 5V)
Input Current (V
IN
> V
DD
)................................... 50 mA
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, T
A
= +25°C with 4.5V
V
DD
18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage
V
IH
2.4
1.8
—
V
Logic ‘0’, Low Input Voltage
V
IL
—
1.3
0.8
V
Input Current
I
IN
-10
—
+10
µA
0V
V
IN
V
DD
Output
High Output Voltage
V
OH
V
DD
– 0.025
—
—
V
DC TEST
Low Output Voltage
V
OL
—
—
0.025
V
DC TEST
Output Resistance, High
R
OH
—
1.4
—
I
OUT
= 10 mA, V
DD
= 18V
Output Resistance, Low
R
OL
—
0.9
1.7
I
OUT
= 10 mA, V
DD
= 18V
Peak Output Current
I
PK
—
9.0
—
A
V
DD
= 18V
Latch-Up Protection
Withstand Reverse Current
I
REV
—
>1.5
—
A
Duty cycle
2%, t 300 µsec
Switching Time (Note 1)
Rise Time
t
R
—
60
75
ns
Figure 4-1, C
L
= 10,000 pF
Fall Time
t
F
—
60
75
ns
Figure 4-1, C
L
= 10,000 pF
Delay Time
t
D1
—
30
60
ns
Figure 4-1
Delay Time
t
D2
—
33
60
ns
Figure 4-1
Power Supply
Power Supply Current
I
S
—
—
0.2
55
1.5
150
mA
µA
V
IN
= 3V
V
IN
= 0V
Operating Input Voltage
V
DD
4.5
—
18
V
Note 1:
Switching times ensured by design.
TC4421M/TC4422M
DS21934B-page 4
2005-2013 Microchip Technology Inc.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V
V
DD
18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage
V
IH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
V
IL
—
—
0.8
V
Input Current
I
IN
-10
—
+10
µA
0V
V
IN
V
DD
Output
High Output Voltage
V
OH
V
DD
– 0.025
—
—
V
DC TEST
Low Output Voltage
V
OL
—
—
0.025
V
DC TEST
Output Resistance, High
R
OH
—
2.4
3.6
I
OUT
= 10 mA, V
DD
= 18V
Output Resistance, Low
R
OL
—
1.8
2.7
I
OUT
= 10 mA, V
DD
= 18V
Switching Time (Note 1)
Rise Time
t
R
—
60
120
ns
Figure 4-1, C
L
= 10,000 pF
Fall Time
t
F
—
60
120
ns
Figure 4-1, C
L
= 10,000 pF
Delay Time
t
D1
—
50
80
ns
Figure 4-1
Delay Time
t
D2
—
65
80
ns
Figure 4-1
Power Supply
Power Supply Current
I
S
—
—
—
—
3
0.2
mA
V
IN
= 3V
V
IN
= 0V
Operating Input Voltage
V
DD
4.5
—
18
V
Note 1:
Switching times ensured by design.
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range (M)
T
A
-55
—
+125
°C
Maximum Junction Temperature
T
J
—
—
+150
°C
Storage Temperature Range
T
A
-65
—
+150
°C
Package Thermal Resistances
Thermal Resistance, 8L-CERDIP
JA
—
150
—
°C/W
2005-2013 Microchip Technology Inc.
DS21934B-page 5
TC4421M/TC4422M
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-1:
Rise Time vs. Supply
Voltage.
FIGURE 2-2:
Rise Time vs. Capacitive
Load.
FIGURE 2-3:
Rise and Fall Times vs.
Temperature.
FIGURE 2-4:
Fall Time vs. Supply
Voltage.
FIGURE 2-5:
Fall Time vs. Capacitive
Load.
FIGURE 2-6:
Propagation Delay vs.
Supply Voltage.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
220
200
180
160
140
120
100
80
60
40
20
0
4
6
8
10
12
14
16
18
1000 pF
4700 pF
10,000 pF
22,000 pF
t
RISE
(nsec)
V
DD
(V)
t
RISE
(nsec)
5V
15V
300
250
200
150
100
50
0
100
1000
10,000
100,000
10V
C
LOAD
(pF)
90
60
40
30
70
50
80
-40
0
40
80
120
TIME (nsec)
T
A
(°C)
C
LOAD
= 10,000 pF
V
DD
= 15V
t
FALL
t
RISE
180
160
140
120
100
80
60
40
20
0
4
6
8
10
12
14
16
18
1000 pF
4700 pF
10,000 pF
22,000 pF
t
FALL
(nsec)
V
DD
(V)
t
FALL
(nsec)
300
250
200
150
100
50
0
100
1000
10,000
5V
10V
15V
100,000
C
LOAD
(pF)
50
8
10
12
14
16
18
4
TIME (nsec)
45
40
35
30
25
6
V
DD
(V)
C
LOAD
= 1000 pF
t
D1
t
D2
TC4421M/TC4422M
DS21934B-page 6
2005-2013 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-7:
Supply Current vs.
Capacitive Load (V
DD
= 18V).
FIGURE 2-8:
Supply Current vs.
Capacitive Load (V
DD
= 12V).
FIGURE 2-9:
Supply Current vs.
Capactive Load (V
DD
= 6V).
FIGURE 2-10:
Supply Current vs.
Frequency (V
DD
= 18V).
FIGURE 2-11:
Supply Current vs.
Frequency (V
DD
= 12V).
FIGURE 2-12:
Supply Current vs.
Frequency (V
DD
= 6V).
220
100
200
180
160
140
120
100
80
60
40
20
0
100,000
10,000
1000
1.125 MHz
632 kHz
200 kHz
20 kHz
2 MHz
63.2 kHz
I
SUPPLY
(mA)
C
LOAD
(pF)
V
DD
= 18V
I
SUPPLY
(mA)
180
160
140
120
100
60
0
80
40
20
1.125 MHz
63.2 kHz
20 kHz
632 kHz
200 kHz
2 MHz
100
100,000
10,000
1000
V
DD
= 12V
C
LOAD
(pF)
I
SUPPLY
(mA)
100
90
80
70
60
50
40
30
20
10
0
20 kHz
632 kHz
200 kHz
2 MHz
63.2 kHz
100
100,000
10,000
1000
V
DD
= 6V
C
LOAD
(pF)
FREQUENCY (kHz)
180
100
80
60
40
20
0
120
140
160
0.1
μF
22,000 pF
470 pF
10,000 pF
4700 pF
10
100
1000
47,000 pF
I
SUPPLY
(mA)
V
DD
= 18V
I
SUPPLY
(mA)
FREQUENCY (kHz)
180
100
80
60
40
20
0
120
140
160
0.1
μF
470 pF
22,000 pF
4700 pF
10,000 pF
47,000 pF
10
100
1000
V
DD
= 12V
I
SUPPLY
(mA)
47,000 pF
120
40
20
0
100
0.1
μF
4700 pF
10
FREQUENCY (kHz)
100
1000
60
80
22,000 pF
470 pF
10,000 pF
10
100
1000
V
DD
= 6V
2005-2013 Microchip Technology Inc.
DS21934B-page 7
TC4421M/TC4422M
Note: Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-13:
Propagation Delay vs. Input
Amplitude.
FIGURE 2-14:
Crossover Energy vs.
Supply Voltage.
FIGURE 2-15:
High-State Output
Resistance vs. Supply Voltage.
FIGURE 2-16:
Propagation Delay vs.
Temperature.
FIGURE 2-17:
Quiescent Supply Current
vs. Temperature.
FIGURE 2-18:
Low-State Output
Resistance vs. Supply Voltage.
120
TIME (nsec)
110
100
90
80
70
60
50
40
30
20
10
0
1
2
3
4
5
6
7
8
9
10
INPUT AMPLITUDE (V)
V
DD
= 10V
C
LOAD
= 10,000 pF
t
D1
t
D2
10-7
10-6
A•sec
NOTE:
The values on this graph represent the loss seen
by the driver during a complete cycle. For the loss
in a single transition, divide the stated value by 2.
4
6
8
10
12
14
16
18
V
DD
(V)
10-8
6
4
6
8
10
12
14
16
18
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
V
DD
(V)
T
J
= 150°C
T
J
= 25°C
R
DS(ON)
(
Ω
)
50
-40
-20
0
20
40
60
80
100 120
-60
TIME (nsec)
45
40
35
30
25
20
T
A
(
°
C)
t
D1
t
D2
V
DD
= 18V
C
LOAD
= 10,000 pF
V
IN
= 5V
102
-40 -20
0
20
40
60
80 100 120
-60
V
DD
= 18V
INPUT = 1
INPUT = 0
I
QUIESCENT
(μ
A)
T
J
(°C)
103
R
DS(ON)
(
Ω
)
4
6
8
10
12
14
16
18
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
V
DD
(V)
T
J
= 150°C
T
J
= 25°C
TC4421M/TC4422M
DS21934B-page 8
2005-2013 Microchip Technology Inc.
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
3.1
Supply Input (V
DD
)
The V
DD
input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V with respect to the ground
pin. The V
DD
input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
should be chosen based on the capacitive load that is
being driven. A minimum value of 1.0 µF is suggested.
3.2
Control Input
The MOSFET driver input is a high-impedance,
TTL/CMOS-compatible input. The input also has
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
3.3
CMOS Push-Pull Output
The MOSFET driver output is a low-impedance,
CMOS, push-pull style output capable of driving a
capacitive load with 9.0A peak currents. The MOSFET
driver output is capable of withstanding 1.5A peak
reverse currents of either polarity.
3.4
Ground
The ground pins are the return path for the bias current
and for the high peak currents that discharge the load
capacitor. The ground pins should be tied into a ground
plane or have very short traces to the bias supply
source return.
Pin No.
8-Pin CERDIP
Symbol
Description
1
V
DD
Supply input, 4.5V to 18V
2
INPUT
Control input, TTL/CMOS-compatible input
3
NC
No connection
4
GND
Ground
5
GND
Ground
6
OUTPUT
CMOS push-pull output
7
OUTPUT
CMOS push-pull output
8
V
DD
Supply input, 4.5V to 18V
2005-2013 Microchip Technology Inc.
DS21934B-page 9
TC4421M/TC4422M
4.0
APPLICATIONS INFORMATION
FIGURE 4-1:
Switching Time Test Circuits.
Inverting Driver
Non-Inverting Driver
Input
t
D1
t
F
t
R
t
D2
Input: 100 kHz,
square wave,
t
RISE
= t
FALL
10 nsec
Output
Input
Output
t
D1
t
F
t
R
t
D2
+5V
10%
90%
10%
90%
10%
90%
+18V
0V
90%
10%
10%
10%
90%
+5V
+18V
0V
0V
0V
90%
2
6
7
5
4
1
8
C
L
= 10,000 pF
0.1 µF
4.7 µF
Input
V
DD
= 18V
Output
0.1 µF
TC4421M
TC4422M
TC4421M/TC4422M
DS21934B-page 10
2005-2013 Microchip Technology Inc.
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
8-Lead CERDIP (300 mil)
Example:
XXXXXXXX
XXXXXNNN
YYWW
TC4421
MJA^^256
0542
Legend: XX...X
Customer-specific information
Y
Year code (last digit of calendar year)
YY
Year code (last 2 digits of calendar year)
WW
Week code (week of January 1 is week ‘01’)
NNN
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
*
This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note:
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
3
e