2002-2012 Microchip Technology Inc.
DS21419D-page 1
TC4420/TC4429
Features
• Latch-Up Protected: Will Withstand >1.5A
Reverse Output Current
• Logic Input Will Withstand Negative Swing Up To
5V
• ESD Protected: 4 kV
• Matched Rise and Fall Times:
- 25 ns (2500 pF load)
• High Peak Output Current: 6A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability: 10,000 pF
• Short Delay Time: 55 ns (typ.)
• CMOS/TTL Compatible Input
• Low Supply Current With Logic ‘1’ Input:
- 450 µA (typ.)
• Low Output Impedance: 2.5
• Output Voltage Swing to Within 25 mV of Ground
or V
DD
• Space-Saving 8-Pin SOIC and 8-Pin 6x5 DFN
Packages
Applications
• Switch-Mode Power Supplies
• Motor Controls
• Pulse Transformer Driver
• Class D Switching Amplifiers
General Description
The TC4420/TC4429 are 6A (peak), single-output
MOSFET drivers. The TC4429 is an inverting driver
(pin-compatible with the TC429), while the TC4420 is a
non-inverting driver. These drivers are fabricated in
CMOS for lower power and more efficient operation
versus bipolar drivers.
Both devices have TTL/CMOS compatible inputs that
can be driven as high as V
DD
+ 0.3V or as low as –5V
without upset or damage to the device. This eliminates
the need for external level-shifting circuitry and its
associated cost and size. The output swing is rail-to-rail,
ensuring better drive voltage margin, especially during
power-up/power-down sequencing. Propagational
delay time is only 55 ns (typ.) and the output rise and fall
times are only 25 ns (typ.) into 2500 pF across the
usable power supply range.
Unlike other drivers, the TC4420/TC4429 are virtually
latch-up proof. They replace three or more discrete
components, saving PCB area, parts and improving
overall system reliability.
Package Types
(1)
5-Pin TO-220
V
DD
GND
IN
P
U
T
GND
OUTP
UT
TC4420
TC4429
Tab is
Common
to V
DD
8-Pin CERDIP/
1
2
3
4
V
DD
5
6
7
8
OUTPUT
GND
V
DD
INPUT
NC
GND
OUTPUT
TC4420
TC4429
TC4420
TC4429
V
DD
OUTPUT
GND
OUTPUT
PDIP/SOIC
Note 1:
Duplicate pins must both be connected for proper operation.
2:
Exposed pad of the DFN package is electrically isolated.
8-Pin DFN
(2)
V
DD
INPUT
NC
GND
2
3
4
5
6
7
8
1
TC4420
TC4429
V
DD
OUTPUT
GND
OUTPUT
TC4420 TC4429
V
DD
OUTPUT
GND
OUTPUT
6A High-Speed MOSFET Drivers
TC4420/TC4429
DS21419D-page 2
2002-2012 Microchip Technology Inc.
Functional Block Diagram
Effective
Input
TC4420
Output
Input
GND
V
DD
300 mV
4.7V
C = 38 pF
TC4429
500 µA
Non-Inverting
Inverting
2002-2012 Microchip Technology Inc.
DS21419D-page 3
TC4420/TC4429
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage ..................................................... +20V
Input Voltage .................................. – 5V to V
DD
+ 0.3V
Input Current (V
IN
> V
DD
)................................... 50 mA
Power Dissipation (T
A
70°C)
5-Pin TO-220 .................................................... 1.6W
CERDIP ....................................................... 800 mW
DFN ............................................ ...................Note 2
PDIP ............................................................ 730 mW
SOIC............................................................ 470 mW
Package Power Dissipation (T
A
25°C)
5-Pin TO-220 (With Heatsink) ........................ 12.5W
Thermal Impedances (To Case)
5-Pin TO-220 R
J-C
...................................... 10°C/W
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, T
A
= +25°C with 4.5V
V
DD
18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input
Voltage
V
IH
2.4
1.8
—
V
Logic ‘0’, Low Input Voltage
V
IL
—
1.3
0.8
V
Input Voltage Range
V
IN
–5
—
V
DD
+0.3
V
Input Current
I
IN
–10
—
+10
µA
0V
V
IN
V
DD
Output
High Output Voltage
V
OH
V
DD
– 0.025
—
—
V
DC TEST
Low Output Voltage
V
OL
—
—
0.025
V
DC TEST
Output Resistance, High
R
OH
—
2.1
2.8
I
OUT
= 10 mA, V
DD
= 18V
Output Resistance, Low
R
OL
—
1.5
2.5
I
OUT
= 10 mA, V
DD
= 18V
Peak Output Current
I
PK
—
6.0
—
A
V
DD
= 18V
Latch-Up Protection
Withstand Reverse Current
I
REV
—
> 1.5
—
A
Duty cycle
2%, t 300 µsec
Switching Time (Note 1)
Rise Time
t
R
—
25
35
ns
Figure 4-1, C
L
= 2,500 pF
Fall Time
t
F
—
25
35
ns
Figure 4-1, C
L
= 2,500 pF
Delay Time
t
D1
—
55
75
ns
Figure 4-1
Delay Time
t
D2
—
55
75
ns
Figure 4-1
Power Supply
Power Supply Current
I
S
—
—
0.45
55
1.5
150
mA
µA
V
IN
= 3V
V
IN
= 0V
Operating Input Voltage
V
DD
4.5
—
18
V
Note 1:
Switching times ensured by design.
2:
Package power dissipation is dependent on the copper pad area on the PCB.
TC4420/TC4429
DS21419D-page 4
2002-2012 Microchip Technology Inc.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V
V
DD
18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input
Voltage
V
IH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
V
IL
—
—
0.8
V
Input Voltage Range
V
IN
–5
—
V
DD
+ 0.3
V
Input Current
I
IN
–10
—
+10
µA
0V
V
IN
V
DD
Output
High Output Voltage
V
OH
V
DD
– 0.025
—
—
V
DC TEST
Low Output Voltage
V
OL
—
—
0.025
V
DC TEST
Output Resistance, High
R
OH
—
3
5
I
OUT
= 10 mA, V
DD
= 18V
Output Resistance, Low
R
OL
—
2.3
5
I
OUT
= 10 mA, V
DD
= 18V
Switching Time (Note 1)
Rise Time
t
R
—
32
60
ns
Figure 4-1, C
L
= 2,500 pF
Fall Time
t
F
—
34
60
ns
Figure 4-1, C
L
= 2,500 pF
Delay Time
t
D1
—
50
100
ns
Figure 4-1
Delay Time
t
D2
—
65
100
ns
Figure 4-1
Power Supply
Power Supply Current
I
S
—
—
0.45
60
3
400
mA
µA
V
IN
= 3V
V
IN
= 0V
Operating Input Voltage
V
DD
4.5
—
18
V
Note 1:
Switching times ensured by design.
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range (C)
T
A
0
—
+70
°C
Specified Temperature Range (I)
T
A
–25
—
+85
°C
Specified Temperature Range (E)
T
A
–40
—
+85
°C
Specified Temperature Range (V)
T
A
–40
—
+125
°C
Maximum Junction Temperature
T
J
—
—
+150
°C
Storage Temperature Range
T
A
–65
—
+150
°C
Package Thermal Resistances
Thermal Resistance, 5L-TO-220
JA
—
71
—
°C/W
Thermal Resistance, 8L-CERDIP
JA
—
150
—
°C/W
Thermal Resistance, 8L-6x5 DFN
JA
—
33.2
—
°C/W
Typical four-layer board
with vias to ground plane.
Thermal Resistance, 8L-PDIP
JA
—
125
—
°C/W
Thermal Resistance, 8L-SOIC
JA
—
155
—
°C/W
2002-2012 Microchip Technology Inc.
DS21419D-page 5
TC4420/TC4429
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-1:
Rise Time vs. Supply
Voltage.
FIGURE 2-2:
Rise Time vs. Capacitive
Load.
FIGURE 2-3:
Propagation Delay Time vs.
Temperature.
FIGURE 2-4:
Fall Time vs. Supply
Voltage.
FIGURE 2-5:
Fall Time vs. Capacitive
Load.
FIGURE 2-6:
Supply Current vs.
Capacitive Load.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
5
7
9
11
13
15
Supply Voltage (V)
C = 2200 pF
L
120
100
80
60
40
20
0
Time (nsec)
C = 4700 pF
L
C = 10,000 pF
L
V = 12V
DD
V = 5V
DD
60
40
20
10
1000
10,000
Capcitive Load (pF)
V = 18V
DD
80
100
Time (nsec)
50
40
30
20
10
0
–60
–20
20
60
100
140
TA (°C)
Delay Time (nsec)
D1
t
D2
t
C = 2200 pF
L
V = 18V
DD
5
7
9
11
13
15
Supply Voltage (V)
C = 2200 pF
L
Time (nsec)
C = 4700 pF
L
C = 10,000 pF
L
100
80
60
40
20
0
60
40
20
10
1000
10,000
Capacitive Load (pF)
Time (nsec)
V = 18V
DD
80
100
V = 12V
DD
V = 5V
DD
0
100
1000
10,000
Capacitive Load (pF)
Supply Current (mA)
84
70
56
42
28
14
0
500 kHz
200 kHz
20 kHz
V = 15V
DD
TC4420/TC4429
DS21419D-page 6
2002-2012 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-7:
Rise and Fall Times vs.
Temperature.
FIGURE 2-8:
Propagation Delay Time vs.
Supply Voltage.
FIGURE 2-9:
Supply Current vs.
Frequency.
FIGURE 2-10:
High-State Output
Resistance vs Supply Voltage.
FIGURE 2-11:
Effect of Input Amplitude on
Propagation Delay.
FIGURE 2-12:
Low-State Output
Resistance vs. Supply Voltage.
–60
–20
20
60
100
140
TA (°C)
t
RISE
t
50
40
30
20
10
0
Time (nsec)
C = 2200 pF
V = 18V
DD
FALL
L
65
60
55
50
45
40
35
Delay Time (nsec)
4
6
8
10
12
14
16
18
Supply Voltage (V)
t
D2
t
D1
100
0
0
100
1000
10,000
Frequency (kHz)
Supply Current (mA)
10
1000
18V
10V
5V
C = 2200 pF
L
5
4
3
2
5
9
13
Supply Voltage (V)
R ( )
Ω
OUT
100 mA
50 mA
10 mA
7
11
15
200
160
120
80
40
0
Delay Time (nsec)
5
6
7
11
13
15
Load = 2200 pF
Input 2.4V
Input 3V
Input 5V
Input 8V and 10V
8
9
10
12
14
V (V)
DD
2.5
2
1.5
1
5
9
13
Supply Voltage (V)
R ( )
Ω
OUT
100 mA
50 mA
10 mA
7
11
15
2002-2012 Microchip Technology Inc.
DS21419D-page 7
TC4420/TC4429
Note: Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-13:
Crossover Energy.
4
3
2
1
0
Crossover Area (A•S) x 10
-8
5
6
7
11
13
15
8
9
10
12
14
Supply Voltage (V)
The values on this graph represent the loss seen
by the driver during one complete cycle. For a
single transition, divide the value by 2.
TC4420/TC4429
DS21419D-page 8
2002-2012 Microchip Technology Inc.
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
3.1
Supply Input (V
DD
)
The V
DD
input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V with respect to the ground
pins. The V
DD
input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
should be chosen based on the capacitive load that is
being driven. A minimum value of 1.0 µF is suggested.
3.2
Control Input
The MOSFET driver input is a high-impedance,
TTL/CMOS compatible input. The input circuitry of the
TC4420/TC4429 MOSFET driver also has a “speed-
up” capacitor. This helps to decrease the propagation
delay times of the driver. Because of this, input signals
with slow rising or falling edges should not be used, as
this can result in double-pulsing of the MOSFET driver
output.
3.3
CMOS Push-Pull Output
The MOSFET driver output is a low-impedance,
CMOS, push-pull style output capable of driving a
capacitive load with 6.0A peak currents. The MOSFET
driver output is capable of withstanding 1.5A peak
reverse currents of either polarity.
3.4
Ground
The ground pins are the return path for the bias current
and the high peak currents that discharge the load
capacitor. The ground pins should be tied into a ground
plane or have very short traces to the bias supply
source return.
3.5
Exposed Metal Pad
The exposed metal pad of the 6x5 DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a printed circuit board (PCB) to aid in
heat removal from the package.
Pin No.
8-Pin CERDIP/
PDIP/SOIC
Pin No.
8-Pin DFN
Pin No.
5-Pin TO-220
Symbol
Description
1
1
—
V
DD
Supply input, 4.5V to 18V
2
2
1
INPUT
Control input, TTL/CMOS compatible input
3
3
—
NC
No Connection
4
4
2
GND
Ground
5
5
4
GND
Ground
6
6
5
OUTPUT
CMOS push-pull output
7
7
—
OUTPUT
CMOS push-pull output
8
8
3
V
DD
Supply input, 4.5V to 18V
—
PAD
—
NC
Exposed Metal Pad
—
—
TAB
V
DD
Metal Tab is at the V
DD
Potential
2002-2012 Microchip Technology Inc.
DS21419D-page 9
TC4420/TC4429
4.0
APPLICATIONS INFORMATION
FIGURE 4-1:
Switching Time Test Circuits.
Inverting Driver
Non-Inverting Driver
Input
t
D1
t
F
t
R
t
D2
Input: 100 kHz,
square wave,
t
RISE
= t
FALL
10 ns
Output
Input
Output
t
D1
t
F
t
R
t
D2
+5V
10%
90%
10%
90%
10%
90%
+18V
0V
90%
10%
10%
10%
90%
+5V
+18V
0V
0V
0V
90%
2
6
7
5
4
1
8
C
L
= 2,500 pF
0.1 µF
4.7 µF
Input
V
DD
= 18V
Output
0.1 µF
Note: Pinout shown is for the PDIP, SOIC, DFN and CERDIP packages.
TC4429
TC4420
TC4420/TC4429
DS21419D-page 10
2002-2012 Microchip Technology Inc.
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
5-Lead TO-220
XXXXXXXXX
XXXXXXXXX
YYWWNNN
Example:
TC4420CAT
0419256
8-Lead CERDIP (300 mil)
Example:
XXXXXXXX
XXXXXNNN
YYWW
TC4420
MJA256
0419
8-Lead DFN
Example
:
XXXXXXX
XXXXXXX
XXYYWW
NNN
TC4420
EMF
0419
256
Legend: XX...X
Customer-specific information
Y
Year code (last digit of calendar year)
YY
Year code (last 2 digits of calendar year)
WW
Week code (week of January 1 is week ‘01’)
NNN
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
*
This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note:
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e