20005368A.book

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 2014 Microchip Technology Inc.

DS20005368A-page 1

MCP14A0151/2

Features

• High Peak Output Current: 1.5A (typical)
• Wide Input Supply Voltage Operating Range:

- 4.5V to 18V

• Low Shoot-Through/Cross-Conduction Current in 

Output Stage

• High Capacitive Load Drive Capability:

- 1000 pF in 11.5 ns (typical)

• Short Delay Times: 33 ns (t

D1

), 24 ns (t

D2

) (typical)

• Low Supply Current: 375 µA (typical)
• Low-Voltage Threshold Input and Enable with 

Hysteresis

• Latch-Up Protected: Withstands 500 mA Reverse 

Current

• Space-Saving Packages:

- 6L  SOT-23
- 6L  2 x 2  DFN

Applications

• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Level Translator
• Motor and Solenoid Drive

General Description

The MCP14A0151/2 devices are high-speed MOSFET
drivers that are capable of providing up to 1.5A of peak
current while operating from a single 4.5V to 18V
supply. The inverting (MCP14A0151) or non-inverting
(MCP14A0152) single channel output is directly
controlled from either TTL or CMOS (2V to 18V) logic.
These devices also feature low shoot-through current,
matched rise and fall times, and short propagation
delays which make them ideal for high switching
frequency applications.
The MCP14A0151/2 family of devices offer enhanced
control with Enable functionality. The active-high
Enable pin can be driven low to drive the output of the
MCP14A0151/2 low, regardless of the status of the
Input pin. An integrated pull-up resistor allows the user
to leave the Enable pin floating for standard operation.
Additionally, the MCP14A0151/2 devices feature sepa-
rate ground pins (A

GND

 and GND), allowing greater

noise isolation between the level-sensitive Input/
Enable pins and the fast, high-current transitions of the
push-pull output stage.
These devices are highly latch-up resistant under any
condition within their power and voltage ratings. They
can accept up to 500 mA of reverse current being
forced back into their outputs without damage or logic
upset. All terminals are fully protected against
electrostatic discharge (ESD) up to 1.75 kV (HBM) and
200V (MM).

Package Types

4

1

2

3

6

OUT

EN

V

DD

A

GND

IN

5

GND

6-Lead SOT-23

2x2 DFN-6*

GND

EN

IN

1

2

3

6

5

4

V

DD

EP

7

A

GND

OUT

OUT

MCP14A0151

MCP14A0152

OUT

MCP14A0152

MCP14A0151

* Includes Exposed Thermal Pad (EP); see 

Table 3-1

.

1.5A MOSFET Driver 

with Low Threshold Input And Enable

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MCP14A0151/2

DS20005368A-page 2

 2014 Microchip Technology Inc.

Functional Block Diagram

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 2014 Microchip Technology Inc.

DS20005368A-page 3

MCP14A0151/2

1.0

ELECTRICAL 
CHARACTERISTICS

Absolute Maximum Ratings †

V

DD

, Supply Voltage.............................................+20V

V

IN

, Input Voltage........... (V

DD

+ 0.3V) to (GND - 0.3V)

V

EN

, Enable Voltage....... (V

DD

+ 0.3V) to (GND - 0.3V)

Package Power Dissipation (T

A

= +50°C)

     6L SOT-23.................................................... 0.52 W
     6L 2 x 2 DFN................................................ 1.09 W
ESD Protection on all Pins ....................1.75 kV (HBM)

....................................................................200V (MM)

† Notice:

 Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.

DC CHARACTERISTICS

Electrical Specifications:

 Unless otherwise noted, T

A

= +25°C, with 4.5V

 V

DD

 18V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input
Input Voltage Range

V

IN

GND - 0.3V

V

DD

+ 0.3

V

Logic ‘1’ High Input Voltage

V

IH

2.0

1.6

V

Logic ‘0’ Low Input Voltage

V

IL

1.2

0.8

V

Input Voltage Hysteresis

V

HYST(IN)

0.4

V

Input Current

I

IN

-1

+1

µA

0V

 V

IN

 V

DD  

Enable
Enable Voltage Range

V

EN

GND - 0.3V

V

DD

+ 0.3

V

Logic ‘1’ High Enable Voltage

V

EH

2.0

1.6

V

Logic ‘0’ Low Enable Voltage

V

EL

1.2

0.8

V

Enable Voltage Hysteresis

V

HYST(EN)

0.4

V

Enable Pin Pull-Up Resistance

R

ENBL

1.8

MΩ

V

DD

= 18V,  ENB = A

GND

Enable Input Current

I

EN

10

µA

V

DD

= 18V,  ENB = A

GND

Propagation Delay

t

D3

34

41

ns

V

DD

= 18V,  V

EN

= 5V,  see 

Figure 4-3

, (

Note 1

)

Propagation Delay

t

D4

23

30

ns

V

DD

= 18V,  V

EN

= 5V,  see 

Figure 4-3

, (

Note 1

)

Output
High Output Voltage

V

OH

V

DD

- 0.025

V

I

OUT

= 0A

Low Output Voltage

V

OL

0.025

V

I

OUT

= 0A

Output Resistance, High

R

OH

4.5

6.5

I

OUT

= 10 mA,  V

DD

= 18V 

Output Resistance, Low

R

OL

3

4.5

I

OUT

= 10 mA,  V

DD

= 18V 

Peak Output Current 

I

PK

1.5

A

V

DD

= 18V (

Note 1

)

Latch-Up Protection Withstand 
Reverse Current

I

REV

0.5

A

Duty cycle

 2%, t   300 µs 

(

Note 1

)

Switching Time (

Note 1

)

Rise Time

t

R

11.5

18.5

ns

V

DD

= 18V,  C

L

= 1000 pF, see 

Figure 4-1

Figure 4-2

 

(

Note 1

)

Fall Time

t

F

10

17

ns

V

DD

= 18V,  C

L

= 1000 pF, see 

Figure 4-1

Figure 4-2

 

(

Note 1

)

Note 1:

Tested during characterization, not production tested.

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MCP14A0151/2

DS20005368A-page 4

 2014 Microchip Technology Inc.

Delay Time

t

D1

33

40

ns

V

DD

= 18V,  V

IN

= 5V,  see 

Figure 4-1

Figure 4-2

 

(

Note 1

)

t

D2

24

31

ns

V

DD

= 18V,  V

IN

= 5V,  see 

Figure 4-1

Figure 4-2

 

(

Note 1

)

Power Supply
Supply Voltage

V

DD

4.5

18

V

Power Supply Current

I

DD

330

560

µA

V

IN

= 3V,  V

EN

 = 3V

I

DD

360

580

µA

V

IN

= 0V,  V

EN

 = 3V

I

DD

360

580

µA

V

IN

= 3V,  V

EN

 = 0V 

I

DD

375

600

µA

V

IN

= 0V,  V

EN

 = 0V

DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE) (

Note 1

)

Electrical Specifications:

 Unless otherwise indicated, over the operating range with 4.5V

 V

DD

 18V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input
Input Voltage Range

V

IN

GND - 0.3V

V

DD

+ 0.3

V

Logic ‘1’ High Input Voltage

V

IH

2.0

1.6

V

Logic ‘0’ Low Input Voltage

V

IL

1.2

0.8

V

Input Voltage Hysteresis

V

HYST(IN)

0.4

V

Input Current

I

IN

-10

+10

µA

0V

 V

IN

 V

DD

Enable
Enable Voltage Range

V

EN

GND - 0.3V

V

DD

+ 0.3

V

Logic ‘1’ High Enable Voltage

V

EH

2.0

1.6

V

Logic ‘0’ Low Enable Voltage

V

EL

1.2

0.8

V

Enable Voltage Hysteresis

V

HYST(EN)

0.4

V

Enable Input Current

I

EN

12

µA

V

DD

= 18V, ENB = A

GND

Propagation Delay

t

D3

32

39

ns

V

DD

= 18V,  V

EN

= 5V,  T

A

= +125°C, 

see 

Figure 4-3

Propagation Delay

t

D4

25

32

ns

V

DD

= 18V,  V

EN

= 5V,  T

A

= +125°C, 

see 

Figure 4-3

Output
High Output Voltage

V

OH

V

DD

- 0.025

V

DC Test

Low Output Voltage

V

OL

0.025

V

DC Test

Output Resistance, High

R

OH

9

I

OUT

= 10 mA,  V

DD

= 18V

Output Resistance, Low

R

OL

6.5

I

OUT

= 10 mA,  V

DD

= 18V

Note 1:

Tested during characterization, not production tested.

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications:

 Unless otherwise noted, T

A

= +25°C, with 4.5V

 V

DD

 18V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Note 1:

Tested during characterization, not production tested.

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 2014 Microchip Technology Inc.

DS20005368A-page 5

MCP14A0151/2

Switching Time (

Note 1

)

Rise Time

t

R

14

21

ns

V

DD

= 18V,  C

L

= 1000 pF, 

T

A

= +125°C, see 

Figure 4-1

Figure 4-2

Fall Time

t

F

13

20

ns

V

DD

= 18V,  C

L

= 1000 pF, 

T

A

= +125°C, see 

Figure 4-1

Figure 4-2

Delay Time

t

D1

31

38

ns

V

DD

= 18V,  V

IN

= 5V,  T

A

= +125°C, 

see 

Figure 4-1

Figure 4-2

t

D2

26

33

V

DD

= 18V,  V

IN

= 5V,  T

A

= +125°C, 

see 

Figure 4-1

Figure 4-2

Power Supply
Supply Voltage

V

DD

4.5

18

V

Power Supply Current

I

DD

760

uA

V

IN

= 3V,  V

EN

 = 3V

I

DD

780

uA

V

IN

= 0V,  V

EN

 = 3V

I

DD

780

uA

V

IN

= 3V,  V

EN

 = 0V

I

DD

800

uA

V

IN

= 0V,  V

EN

 = 0V

TEMPERATURE CHARACTERISTICS

Electrical Specifications: 

Unless otherwise noted, all parameters apply with 4.5V

 V

DD

 18V

Parameter

Sym.

Min.

Typ.

Max.

Units

Comments

Temperature Ranges
Specified Temperature Range

T

A

-40

+125

°C

Maximum Junction Temperature

T

J

+150

°C

Storage Temperature Range

T

A

-65

+150

°C

Package Thermal Resistances
Thermal Resistance, 6LD 2x2 DFN

JA

91

°C/W

Thermal Resistance, 6LD SOT-23

JA

192

°C/W

DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE) (

Note 1

) (CONTINUED)

Electrical Specifications:

 Unless otherwise indicated, over the operating range with 4.5V

 V

DD

 18V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Note 1:

Tested during characterization, not production tested.

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MCP14A0151/2

DS20005368A-page 6

 2014 Microchip Technology Inc.

2.0

TYPICAL PERFORMANCE CURVES

Note:

 Unless otherwise indicated, T

A

= +25°C with 4.5V

 V

DD

 18V.

FIGURE 2-1:

Rise Time vs. Supply 

Voltage.

FIGURE 2-2:

Rise Time vs. Capacitive 

Load.

FIGURE 2-3:

Fall Time vs. Supply 

Voltage.

FIGURE 2-4:

Fall Time vs. Capacitive 

Load.

FIGURE 2-5:

Rise and Fall Time vs. 

Temperature.

FIGURE 2-6:

Crossover Current vs. 

Supply Voltage.

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

0

20

40

60

80

100

120

140

160

180

200

4

6

8

10

12

14

16

18

Rise T

ime (ns)

Supply Voltage (V)

470 pF

1000 pF

3300 pF

6800 pF

10000 pF

0

20

40

60

80

100

120

140

160

180

200

100

1000

10000

Rise T

ime (ns)

 

Capacitive Load (pF) 

18V 

12V 

5V 

0

20

40

60

80

100

120

140

160

4

6

8

10

12

14

16

18

Fall T

ime (ns)

Supply Voltage (V)

470 pF

1000 pF

3300 pF

6800 pF

10000 pF

0

20

40

60

80

100

120

140

160

100

1000

10000

Fall T

ime (ns)

 

Capacitive Load (pF) 

18V 

12V 

5V 

4

6

8

10

12

14

16

-40 -25 -10

5

20

35

50

65

80

95 110 125

T

ime (ns)

Temperature (°C)

V

DD

= 18V

t

F

, 1000 pF

t

R

, 1000 pF

t

R

, 470 pF

t

F

, 470 pF

1

10

100

1000

10000

4

6

8

10

12

14

16

18

Crossover Current (µA)

Supply Voltage (V)

500k Hz
200 kHz
100 kHz
50 kHz

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DS20005368A-page 7

MCP14A0151/2

Note:

 Unless otherwise indicated, T

A

= +25°C  with  4.5V

 V

DD

 18V.

FIGURE 2-7:

Input Propagation Delay vs. 

Supply Voltage.

FIGURE 2-8:

Input Propagation Delay 

Time vs. Input Amplitude.

FIGURE 2-9:

Input Propagation Delay vs. 

Temperature.

FIGURE 2-10:

Enable Propagation Delay 

vs. Supply Voltage.

FIGURE 2-11:

Enable Propagation Delay 

Time vs. Enable Voltage Amplitude.

FIGURE 2-12:

Enable Propagation Delay 

vs. Temperature.

20

25

30

35

40

45

4

6

8

10

12

14

16

18

Input Propagation 

Delay

 (ns)

Supply Voltage (V)

V

IN

= 5V

t

D1

t

D2

15

20

25

30

35

40

4

6

8

10

12

14

16

18

Input Propogation 

Delay

 (ns)

Input Voltage Amplitude (V)

t

D2

t

D1

V

DD

= 18V

20

25

30

35

40

-40 -25 -10

5

20

35

50

65

80

95 110 125

Input Propagation 

Delay

 (ns)

Temperature (°C)

V

DD

= 18V

V

IN

= 5V

t

D2

t

D1

20

25

30

35

40

45

4

6

8

10

12

14

16

18

Enable Propagation Delay

 (ns)

Supply Voltage (V)

V

EN

= 5V

t

D3

t

D4

15

20

25

30

35

40

4

6

8

10

12

14

16

18

Enable Propagation Delay

 (ns)

Enable Voltage Amplitude (V)

t

D4

t

D3

V

DD

= 18V

20

25

30

35

40

45

-40 -25 -10

5

20

35

50

65

80

95 110 125

Enable Propagation Delay

 (ns)

Temperature (°C)

t

D4

t

D3

V

DD

= 18V

V

EN

= 5V

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MCP14A0151/2

DS20005368A-page 8

 2014 Microchip Technology Inc.

Note:

 Unless otherwise indicated, T

A

= +25°C with 4.5V

 V

DD

 18V.

FIGURE 2-13:

Quiescent Supply Current 

vs. Supply Voltage.

FIGURE 2-14:

Quiescent Supply Current 

vs. Temperature.

FIGURE 2-15:

Input Threshold vs. 

Temperature.

FIGURE 2-16:

Input Threshold vs Supply 

Voltage.

FIGURE 2-17:

Enable Threshold vs. 

Temperature.

FIGURE 2-18:

Enable Threshold vs Supply 

Voltage.

250

300

350

400

4

6

8

10

12

14

16

18

Quiescent Current (µA)

Supply Voltage (V)

V

IN

= 3V,V

EN

= 3V  

V

IN

= 0V,V

EN

= 0V  

V

IN

= 3V,V

EN

= 0V  or V

IN

= 0V,V

EN

= 3V   

200

250

300

350

400

450

500

550

-40 -25 -10

5

20 35 50 65 80 95 110 125

Quiescent Current (µA)

Temperature (°C)

V

DD

= 18V

V

IN

= 5V,V

EN

= 5V  

V

IN

= 0V,V

EN

= 0V  

V

IN

= 5V,V

EN

= 0V  or V

IN

= 0V,V

EN

= 5V   

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

-40 -25 -10

5

20

35

50

65

80

95 110 125

Input Threshold 

(V)

Temperature (°C)

V

DD

= 18V

V

IL

V

IH

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

4

6

8

10

12

14

16

18

Input Threshold 

(V)

Supply Voltage (V)

V

IL

V

IH

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

-40 -25 -10

5

20

35

50

65

80

95 110 125

Enable Threshold (V)

Temperature (°C)

V

DD

= 18V

V

EL

V

EH

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

4

6

8

10

12

14

16

18

Enable Threshold (V)

Supply Voltage (V)

V

EL

V

EH

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DS20005368A-page 9

MCP14A0151/2

Note:

 Unless otherwise indicated, T

A

= +25°C  with  4.5V

 V

DD

 18V.

FIGURE 2-19:

Output Resistance (Output 

High) vs. Supply Voltage.

FIGURE 2-20:

Output Resistance (Output 

Low) vs. Supply Voltage.

FIGURE 2-21:

Supply Current vs. 

Capacitive Load (V

DD

 = 18V).

FIGURE 2-22:

Supply Current vs. 

Capacitive Load (V

DD

 = 12V).

FIGURE 2-23:

Supply Current vs. 

Capacitive Load (V

DD

 = 6V).

FIGURE 2-24:

Supply Current vs. 

Frequency (V

DD

 = 18V).

4

5

6

7

8

9

10

11

12

13

14

4

6

8

10

12

14

16

18

R

OH

 - Output Resistance 

Supply Voltage (V) 

T

A

 = +25

°C  

T

A

 = +125

°C  

V

IN

 = 0V (MCP14A0151) 

V

IN

 = 5V (MCP14A0152) 

 

0

2

4

6

8

10

4

6

8

10

12

14

16

18

R

OL

 - Output Resistance 

Supply Voltage (V) 

T

A

 = +25

°C  

T

A

 = +125

°C  

V

IN

 = 5V (MCP14A0151) 

V

IN

 = 0V (MCP14A0152) 

 

0

10

20

30

40

50

60

70

80

90

100

100

1000

10000

Supply

 Current 

(mA)

Capacitive Load (pF)

1 MHz
500 kHz
200 kHz
100 kHz
50 kHz
10 kHz

V

DD

= 18V

0

5

10

15

20

25

30

35

40

45

50

100

1000

10000

Supply

 Current 

(mA)

Capacitive Load (pF)

1 MHz
500 kHz
200 kHz
100 kHz
50 kHz
10 kHz

V

DD

= 12V

0

5

10

15

20

25

30

100

1000

10000

Supply

 Current 

(mA)

Capacitive Load (pF)

1 MHz
500 kHz
200 kHz
100 kHz
50 kHz
10 kHz

V

DD

= 6V

0

10

20

30

40

50

60

70

80

90

100

10

100

1000

Supply

 Current 

(mA)

Switching Frequency (kHz)

10000 pF
6800 pF
3300 pF
1000 pF
470 pF
100 pF

V

DD

= 18V

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background image

MCP14A0151/2

DS20005368A-page 10

 2014 Microchip Technology Inc.

Note:

 Unless otherwise indicated, T

A

= +25°C with 4.5V

 V

DD

 18V.

FIGURE 2-25:

Supply Current vs. 

Frequency (V

DD

 = 12V).

FIGURE 2-26:

Supply Current vs. 

Frequency (V

DD

 = 6V).

FIGURE 2-27:

Enable Current vs. Supply 

Voltage.

0

5

10

15

20

25

30

35

40

45

50

10

100

1000

Supply

 Current 

(mA)

Switching Frequency (kHz)

10000 pF
6800 pF
3300 pF
1000 pF
470 pF
100 pF

V

DD

= 12V

0

5

10

15

20

25

30

10

100

1000

Supply

 Current 

(mA)

Switching Frequency (kHz)

10000 pF
6800 pF
3300 pF
1000 pF
470 pF
100 pF

V

DD

= 6V

8

9

10

11

12

13

14

4

6

8

10

12

14

16

18

Enable Current (uA) 

Supply Voltage (V) 

T

A

 = +25

°C  

T

A

 = +125

°C  

Maker
Microchip Technology Inc.
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