![background image](/sites/default/files/pdfhtml_microchip/20001889F001.png)
2004-2016 Microchip Technology Inc.
DS20001889F-page 1
MCP111/112
Features
• Ultra-Low Supply Current: 1.75 µA (Max.)
• Precision Monitoring Options Of:
- 1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V,
4.38V and 4.63V
• Resets Microcontroller in a Power-Loss Event
• Active-Low V
OUT
Pin:
- MCP111 Active-Low, Open-Drain
- MCP112 Active-Low, Push-Pull
• Available in SOT23-3, TO-92, SC-70 and
SOT-89-3 Packages
• Temperature Range:
- Extended: -40°C to +125°C
(except MCP1XX-195)
- Industrial: -40°C to +85°C (MCP1XX-195 Only)
• Pb-Free Devices
Applications
• Critical Microcontroller and Microprocessor
Power-Monitoring Applications
• Computers
• Intelligent Instruments
• Portable Battery-Powered Equipment
General Description
The MCP111/112 are voltage-detecting devices
designed to keep a microcontroller in reset until the
system voltage has stabilized at the appropriate level
for reliable system operation. These devices also
operate as protection from brown-out conditions when
the system supply voltage drops below the specified
threshold voltage level. Eight different trip voltages are
available.
Package Types
Block Diagram
3-Pin SOT23-3/SC-70
V
DD
V
OUT
M
C
P
111
/1
1
2
1
2
3
V
SS
V
SS
V
OUT
3-Pin TO-92
V
DD
1
3
2
V
DD
V
SS
V
OUT
3-Pin SOT-89
V
DD
MCP111/112
V
DD
Comparator
+
–
Output
Driver
V
OUT
Band Gap
Reference
V
SS
DEVICE FEATURES
Device
Output
Reset Delay
(typ.)
SOT-23/SC70
Package Pin Out
(Pin # 1, 2, 3)
Comment
Type
Pull-up Resistor
MCP111
Open-drain
External
No
V
OUT
, V
SS
, V
DD
MCP112
Push-pull
No
No
V
OUT
, V
SS
, V
DD
MCP102
Push-pull
No
120 ms
RST, V
DD
, V
SS
See MCP102/103/121/131 Data Sheet
(DS20001906)
MCP103
Push-pull
No
120 ms
V
SS
, RST, V
DD
See MCP102/103/121/131 Data Sheet
(DS20001906)
MCP121
Open-drain
External
120 ms
RST, V
DD
, V
SS
See MCP102/103/121/131 Data Sheet
(DS20001906)
MCP131
Open-Drain
Internal (~95 k
)
120 ms
RST, V
DD
, V
SS
See MCP102/103/121/131 Data Sheet
(DS20001906)
Micropower Voltage Detector
![background image](/sites/default/files/pdfhtml_microchip/20001889F002.png)
MCP111/112
DS20001889F-page 2
2004-2016 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
V
DD
...................................................................................7.0V
Input current (V
DD
) .......................................................10 mA
Output current (RST) ....................................................10 mA
Rated Rise Time of V
DD
.............................................100V/µs
All inputs and outputs (except RST) w.r.t. V
SS
.............................................................. -0.6V to (V
DD
+ 1.0V)
RST output w.r.t. V
SS
....................................... -0.6V to 13.5V
Storage temperature ..................................... 65°C to + 150°C
Ambient temp. with power applied ...............-40°C to + 125°C
Maximum Junction temp. with power applied ............... 150°C
ESD protection on all pins
2 kV
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k
(only MCP111),
T
A
= -40°C to +125°C.
Parameters
Symbol
Min.
Typ.
Max.
Units
Conditions
Operating Voltage Range
V
DD
1.0
—
5.5
V
Specified V
DD
Value to V
OUT
low
V
DD
1.0
—
V
I
RST
= 10 µA, V
RST
< 0.2V
Operating Current
I
DD
—
< 1
1.75
µA
V
DD
Trip Point
MCP1XX-195
V
TRIP
1.872
1.900
1.929
V
T
A
= +25°C (
Note 1
)
1.853
1.900
1.948
V
T
A
= -40°C to +85°C (
Note 2
)
MCP1XX-240
2.285
2.320
2.355
V
T
A
= +25°C (
Note 1
)
2.262
2.320
2.378
V
Note 2
MCP1XX-270
2.591
2.630
2.670
V
T
A
= +25°C (
Note 1
)
2.564
2.630
2.696
V
Note 2
MCP1XX-290
2.857
2.900
2.944
V
T
A
= +25°C (
Note 1
)
2.828
2.900
2.973
V
Note 2
MCP1XX-300
2.886
2.930
2.974
V
T
A
= +25°C (
Note 1
)
2.857
2.930
3.003
V
Note 2
MCP1XX-315
3.034
3.080
3.126
V
T
A
= +25°C (
Note 1
)
3.003
3.080
3.157
V
Note 2
MCP1XX-450
4.314
4.380
4.446
V
T
A
= +25°C (
Note 1
)
4.271
4.380
4.490
V
Note 2
MCP1XX-475
4.561
4.630
4.700
V
T
A
= +25°C (
Note 1
)
4.514
4.630
4.746
V
Note 2
V
DD
Trip Point Tempco
T
TPCO
—
±100
—
ppm/°
C
Note
1:
Trip point is ±1.5% from typical value.
2:
Trip point is ±2.5% from typical value.
3:
This specification allows this device to be used in PIC
®
microcontroller applications that require the In-Circuit Serial
Programming™ (ICSP™) feature (see device-specific programming specifications for voltage requirements). This
specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (V
OUT
). The total
time that the V
OUT
pin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the V
OUT
pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between 0°C
to 70°C (+25°C preferred). For additional information, please refer to
Figure 2-28
.
4:
This parameter is established by characterization and is not 100% tested.
![background image](/sites/default/files/pdfhtml_microchip/20001889F003.png)
2004-2016 Microchip Technology Inc.
DS20001889F-page 3
MCP111/112
Threshold Hysteresis
min. = 1%, max = 6%)
MCP1XX-195
V
HYS
0.019
—
0.114
V
T
A
= +25°C
MCP1XX-240
0.023
—
0.139
V
MCP1XX-270
0.026
—
0.158
V
MCP1XX-290
0.029
—
0.174
V
MCP1XX-300
0.029
—
0.176
V
MCP1XX-315
0.031
—
0.185
V
MCP1XX-450
0.044
—
0.263
V
MCP1XX-475
0.046
—
0.278
V
V
OUT
Low-level Output Voltage
V
OL
—
—
0.4
V
I
OL
= 500 µA, V
DD
= V
TRIP(MIN)
V
OUT
High-level Output Voltage
V
OH
V
DD
– 0.6
—
—
V
I
OH
= 1 mA, For only MCP112
(push-pull output)
Open-drain High Voltage on Output
V
ODH
—
—
13.5
(3)
V
MCP111 only,
V
DD
= 3.0V, Time voltage >
5.5V applied
100s,
current into pin limited to
2 mA, +25°C operation
recommended
Note 3
,
Note 4
Open-drain Output Leakage Current
(MCP111 only)
I
OD
—
0.1
—
µA
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k
(only MCP111),
T
A
= -40°C to +125°C.
Parameters
Symbol
Min.
Typ.
Max.
Units
Conditions
Note
1:
Trip point is ±1.5% from typical value.
2:
Trip point is ±2.5% from typical value.
3:
This specification allows this device to be used in PIC
®
microcontroller applications that require the In-Circuit Serial
Programming™ (ICSP™) feature (see device-specific programming specifications for voltage requirements). This
specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (V
OUT
). The total
time that the V
OUT
pin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the V
OUT
pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between 0°C
to 70°C (+25°C preferred). For additional information, please refer to
Figure 2-28
.
4:
This parameter is established by characterization and is not 100% tested.
![background image](/sites/default/files/pdfhtml_microchip/20001889F004.png)
MCP111/112
DS20001889F-page 4
2004-2016 Microchip Technology Inc.
FIGURE 1-1:
Timing Diagram.
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k
(only MCP111), T
A
= -40°C to +125°C.
Parameters
Symbol
Min.
Typ.
Max.
Units
Conditions
V
DD
Detect to V
OUT
Inactive
t
RPU
—
90
—
µs
Figure 1-1
and C
L
= 50 pF
(
Note 1
)
V
DD
Detect to V
OUT
Active
t
RPD
—
130
—
µs
V
DD
ramped from V
TRIP(MAX)
+
250 mV down to V
TRIP(MIN)
–
250 mV, per
Figure 1-1
,
C
L
= 50 pF (
Note 1
)
V
OUT
Rise Time After V
OUT
Active
t
RT
—
5
—
µs
For V
OUT
10% to 90% of final
value per
Figure 1-1
, C
L
= 50 pF
(
Note 1
)
Note 1:
These parameters are for design guidance only and are not 100% tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k
(MCP111 only), T
A
= -40°C to +125°C.
Parameters
Symbol
Min.
Typ.
Max.
Units
Conditions
Temperature Ranges
Specified Temperature Range
T
A
-40
—
+85
°C
MCP1XX-195
Specified Temperature Range
T
A
-40
—
+125
°C
Except MCP1XX-195
Maximum Junction Temperature
T
J
—
—
+150
°C
Storage Temperature Range
T
A
-65
—
+150
°C
Package Thermal Resistances
Thermal Resistance, 3L-SOT23
JA
—
336
—
°C/W
Thermal Resistance, 3L-SC-70
JA
—
340
—
°C/W
Thermal Resistance, 3L-TO-92
JA
—
131.9
—
°C/W
Thermal Resistance, 3L-SOT-89
JA
—
110
—
°C/W
1V
1V
V
TRIP
V
DD
V
OUT
t
RPU
V
OH
t
RT
t
RPD
V
OL
![background image](/sites/default/files/pdfhtml_microchip/20001889F005.png)
2004-2016 Microchip Technology Inc.
DS20001889F-page 5
MCP111/112
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k
(only MCP111;
see Figure 4-1), T
A
= -40°C to +125°C.
FIGURE 2-1:
I
DD
vs. Temperature
(MCP111-195).
FIGURE 2-2:
I
DD
vs. Temperature
(MCP112-300).
FIGURE 2-3:
I
DD
vs. Temperature
(MCP112-475).
FIGURE 2-4:
I
DD
vs. V
DD
(MCP111-195).
FIGURE 2-5:
I
DD
vs. V
DD
(MCP112-300).
FIGURE 2-6:
I
DD
vs. V
DD
(MCP112-475).
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-40
-20
0
20
40
60
80
100
120
140
Temperature (°C)
I
DD
(uA)
1.7V
1.0V
2.1V
2.8V
4.0V
5.0V
5.5V
MCP111-195
0
0.2
0.4
0.6
0.8
1
1.2
-40
-20
0
20
40
60
80
100
120
140
Temperature (°C)
I
DD
(uA)
1.7V
1.0V
2.1V
2.8V
4.0V
5.0V
MCP112-300
5.5V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-40
-20
0
20
40
60
80
100
120
140
Temperature (°C)
I
DD
(uA)
1.7V
1.0V
2.1V
2.8V
4.0V
5.0V
5.5V
MCP112-475
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.0
2.0
3.0
4.0
5.0
6.0
V
DD
(V)
I
DD
(uA)
-40°C
+25°C
+85°C
+125°C
MCP111-195
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.0
2.0
3.0
4.0
5.0
6.0
V
DD
(V)
I
DD
(uA)
MCP112-300
-40°C
+25°C
+85°C
+125°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.0
2.0
3.0
4.0
5.0
6.0
V
DD
(V)
I
DD
(uA)
MCP112-475
-40°C
+25°C
+85°C
+125°C
![background image](/sites/default/files/pdfhtml_microchip/20001889F006.png)
MCP111/112
DS20001889F-page 6
2004-2016 Microchip Technology Inc.
Note: Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k
(only MCP111;
see Figure 4-1), T
A
= -40°C to +125°C.
FIGURE 2-7:
V
TRIP
and V
HYST
vs.
Temperature (MCP111-195).
FIGURE 2-8:
V
TRIP
and V
HYST
vs.
Temperature (MCP112-300).
FIGURE 2-9:
V
TRIP
and V
HYST
vs.
Temperature (MCP112-475).
FIGURE 2-10:
V
OL
vs. I
OL
(MCP111-195 @ V
DD
= 1.7V).
FIGURE 2-11:
V
OL
vs. I
OL
(MCP112-300 @ V
DD
= 2.7V).
FIGURE 2-12:
V
OL
vs. I
OL
(MCP112-475 @ V
DD
= 4.4V).
1.895
1.900
1.905
1.910
1.915
1.920
1.925
1.930
1.935
1.940
1.945
1.950
-60
-10
40
90
140
Temperature (°C)
V
TR
IP
(V
)
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
Hyst (V
)
V
TRIP
, V decreasing
V
TRIP
, V increasing
V
HYS
, Hysteresis
MCP111-195
max temp is
+85°C
2.900
2.920
2.940
2.960
2.980
3.000
3.020
3.040
-60
-10
40
90
140
Temperature (°C)
V
TR
IP
(V
)
0.082
0.084
0.086
0.088
0.090
0.092
0.094
0.096
0.098
0.100
Hyst (V
)
MCP112-300
V
TRIP
, V decreasing
V
TRIP
, V increasing
V
HYS
, Hysteresis
4.580
4.600
4.620
4.640
4.660
4.680
4.700
4.720
4.740
4.760
4.780
4.800
-60
-20
20
60
100
140
Temperature (°C)
V
TR
IP
(V
)
0.100
0.110
0.120
0.130
0.140
0.150
0.160
0.170
0.180
Hyst (V
)
MCP112-475
V
TRIP
, V decreasing
V
TRIP
, V increasing
V
HYS
, Hysteresis
0.000
0.020
0.040
0.060
0.080
0.100
0.120
0.00
0.25
0.50
0.75
1.00
I
OL
(mA)
V
OL
(V
)
-40°C
+25°C
+85°C
+125°C
MCP111-195
V
DD
= 1.7V
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0.070
0.080
0.00
0.25
0.50
0.75
1.00
I
OL
(mA)
V
OL
(V
)
MCP112-300
V
DD
= 2.7V
-40°C
+25°C
+85°C
+125°C
0.000
0.010
0.020
0.030
0.040
0.050
0.00
0.25
0.50
0.75
1.00
I
OL
(mA)
V
OL
(V
)
MCP112-475
V
DD
= 4.4V
-40°C
+25°C
+85°C
+125°C
![background image](/sites/default/files/pdfhtml_microchip/20001889F007.png)
2004-2016 Microchip Technology Inc.
DS20001889F-page 7
MCP111/112
Note: Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k
(only MCP111;
see Figure 4-1), T
A
= -40°C to +125°C.
FIGURE 2-13:
V
OL
vs. Temperature
(MCP111-195 @ V
DD
= 1.7V).
FIGURE 2-14:
V
OL
vs. Temperature
(MCP112-300 @ V
DD
= 2.7V).
FIGURE 2-15:
V
OL
vs. Temperature
(MCP112-475 @ V
DD
= 4.4V).
FIGURE 2-16:
V
OH
vs. I
OH
(MCP112-300 @ V
DD
= 3.1V).
FIGURE 2-17:
V
OH
vs. I
OH
(MCP112-475 @ V
DD
= 4.8V).
FIGURE 2-18:
Typical Transient Response
(25 °C).
0.000
0.020
0.040
0.060
0.080
0.100
0.120
-40
0
40
80
120
Temperature (°C)
V
OL
(V
)
I
OL
= 0.00 mA
MCP111-195
V
DD
= 1.7 V
I
OL
= 0.25 mA
I
OL
= 0.50 mA
I
OL
= 0.75 mA
I
OL
= 1.00 mA
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0.070
0.080
-40
0
40
80
120
Temperature (°C)
V
OL
(V
)
MCP112-300
V
DD
= 2.7V
I
OL
= 0.00 mA
I
OL
= 0.25 mA
I
OL
= 0.50 mA
I
OL
= 0.75 mA
I
OL
= 1.00 mA
0.000
0.010
0.020
0.030
0.040
0.050
-40
0
40
80
120
Temperature (°C)
V
OL
(V
)
I
OL
= 0.00 mA
I
OL
= 0.25 mA
I
OL
= 0.50 mA
I
OL
= 0.75 mA
I
OL
= 1.00 mA
MCP112-475
V
DD
= 4.4V
2.900
2.950
3.000
3.050
3.100
3.150
0.00
0.25
0.50
0.75
1.00
I
OL
(mA)
V
OH
(V
)
-40 °C
+25 °C
+85 °C
+125 °C
MCP112-300
V
DD
= 3.1V
4.680
4.700
4.720
4.740
4.760
4.780
4.800
4.820
0.00
0.25
0.50
0.75
1.00
I
OL
(mA)
V
OH
(V
)
MCP112-475
V
DD
= 4.8V
-40 °C
+25 °C
+85 °C
+125 °C
0
100
200
300
400
500
600
0.001
0.01
0.1
1
10
V
TRIP
(min) - V
DD
Transi
ent
D
u
rat
ion (
µ
s)
MCP111-195
MCP112-475
MCP112-300
![background image](/sites/default/files/pdfhtml_microchip/20001889F008.png)
MCP111/112
DS20001889F-page 8
2004-2016 Microchip Technology Inc.
Note: Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k
(only MCP111;
see Figure 4-1), T
A
= -40°C to +125°C.
FIGURE 2-19:
t
RPD
vs. Temperature
(MCP111-195).
FIGURE 2-20:
t
RPD
vs. Temperature
(MCP112-300).
FIGURE 2-21:
t
RPD
vs. Temperature
(MCP112-475).
FIGURE 2-22:
t
RPU
vs. Temperature
(MCP111-195).
FIGURE 2-23:
t
RPU
vs. Temperature
(MCP112-300).
FIGURE 2-24:
t
RPU
vs. Temperature
(MCP112-475).
0
50
100
150
200
250
300
350
-40
-15
10
35
60
85
110
Temperature (°C)
t
RPD
(µs)
V
DD
decreasing from:
V
TRIP(max)
+ 0.25V to V
TRIP(min)
- 0.25V
V
DD
decreasing from:
5V - 1.7V
V
DD
decreasing from:
5V - 0V
MCP111-195
0
20
40
60
80
100
120
140
160
-40
-15
10
35
60
85
110
Temperature (°C)
t
RPD
(µ
s
)
V
DD
decreasing from:
V
TRIP(max)
+ 0.25V to V
TRIP(min)
- 0.25V
V
DD
decreasing from:
5V - 2.7V
V
DD
decreasing from:
5V - 0V
MCP112-300
0
50
100
150
200
250
-40
-15
10
35
60
85
110
Temperature (°C)
t
RPD
(µs)
V
DD
decreasing from:
V
TRIP(max)
+ 0.25V to V
TRIP(min)
- 0.25V
V
DD
decreasing from:
5V - 4.4V
V
DD
decreasing from:
5V - 0V
MCP112-475
0
50
100
150
200
250
300
350
400
-40
-15
10
35
60
85
110
Temperature (°C)
t
RPU
(µ
s
)
V
DD
increasing from:
0V - 2.1V
V
DD
increasing
from: 0V - 5.5V
V
DD
increasing from:
0V - 2.8V
V
DD
increasing
from: 0V - 4.0V
MCP111-195
0
20
40
60
80
100
120
140
-40
-15
10
35
60
85
110
Temperature (°C)
t
RPU
(µs)
V
DD
increasing from:
0V - 3.1V
V
DD
increasing from:
0V - 5.5V
V
DD
increasing from:
0V - 3.3V
V
DD
increasing from:
0V - 4.0V
MCP112-300
0
50
100
150
200
250
-40
-15
10
35
60
85
110
Temperature (°C)
t
RPU
(µs)
V
DD
increasing from:
0V - 4.9V
V
DD
increasing from:
0V - 5.0V
V
DD
increasing from:
0V - 5.5V
MCP112-475
![background image](/sites/default/files/pdfhtml_microchip/20001889F009.png)
2004-2016 Microchip Technology Inc.
DS20001889F-page 9
MCP111/112
Note: Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k
(only MCP111;
see Figure 4-1), T
A
= -40°C to +125°C.
FIGURE 2-25:
t
RT
vs. Temperature
(MCP111-195).
FIGURE 2-26:
t
RT
vs. Temperature
(MCP112-300).
FIGURE 2-27:
t
RT
vs. Temperature
(MCP112-475).
FIGURE 2-28:
Open-Drain Leakage
Current vs. Voltage Applied to V
OUT
Pin
(MCP111-195).
20
25
30
35
40
45
50
55
60
-40
-15
10
35
60
85
110
Temperature (°C)
t
RT
(µ
s
)
V
DD
increasing from:
0V - 2.1V
V
DD
increasing from:
0V - 5.5V
V
DD
increasing from:
0V - 2.8V
V
DD
increasing
from: 0V - 4.0V
MCP111-195
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
-40
-15
10
35
60
85
110
Temperature (°C)
t
RT
(µs)
V
DD
increasing from:
0V - 3.1V
V
DD
increasing from:
0V - 5.5V
V
DD
increasing from:
0V - 3.3V
V
DD
increasing from:
0V - 4.0V
MCP112-300
0.0800
0.0900
0.1000
0.1100
0.1200
0.1300
0.1400
0.1500
-40
-15
10
35
60
85
110
Temperature (°C)
t
RT
(µs)
V
DD
increasing from:
0V - 4.8V
V
DD
increasing from:
0V - 5.5V
V
DD
increasing from:
0V - 4.9V
V
DD
increasing from:
0V - 5.0V
MCP112-475
1.E-13
1.E-12
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14
Pull-Up Voltage (V)
Op
en
-D
rai
n
L
eak
ag
e (A
)
125°C
25°C
- 40°C
10m
100µ
1m
10µ
1µ
10n
100n
1n
100p
1p
10p
100f
![background image](/sites/default/files/pdfhtml_microchip/20001889F010.png)
MCP111/112
DS20001889F-page 10
2004-2016 Microchip Technology Inc.
3.0
PIN DESCRIPTION
The descriptions of the pins are listed in
Table 3-1
.
TABLE 3-1:
PIN FUNCTION TABLE
Pin Number
Symbol
Function
SOT-23-3
SC-70
SOT-89-3
T0-92
1
1
1
V
OUT
Output State
V
DD
Falling:
H = V
DD
> V
TRIP
L = V
DD
< V
TRIP
V
DD
Rising:
H = V
DD
> V
TRIP
+ V
HYS
L = V
DD
< V
TRIP
+ V
HYS
2
3
3
V
SS
Ground reference
3
2
2
V
DD
Positive power supply
—
4
—
V
DD
Positive power supply