© 2008 Microchip Technology Inc.
DS21613C-page 1
MCP616/7/8/9
Features
• Low Input Offset Voltage: ±150 µV (maximum)
• Low Noise: 2.2 µV
P-P
(typical, 0.1 Hz to 10 Hz)
• Rail-to-Rail Output
• Low Input Offset Current: 0.3 nA (typical)
• Low Quiescent Current: 25 µA (maximum)
• Power Supply Voltage: 2.3V to 5.5V
• Unity Gain Stable
• Chip Select (CS) Capability: MCP618
• Industrial Temperature Range: -40°C to +85°C
• No Phase Reversal
• Available in Single, Dual and Quad Packages
Typical Applications
• Battery Power Instruments
• Weight Scales
• Strain Gauges
• Medical Instruments
• Test Equipment
Design Aids
• SPICE Macro Models
• Microchip Advanced Part Selector (MAPS)
• Mindi™ Circuit Designer & Simulator
• Analog Demonstration and Evaluation Boards
• Application Notes
Input Offset Voltage
Description
The MCP616/7/8/9 family of operational amplifiers (op
amps) from Microchip Technology Inc. are capable of
precision, low-power, single-supply operation. These
op amps are unity-gain stable, have low input offset
voltage (±150 µV, maximum), rail-to-rail output swing
and low input offset current (0.3 nA, typical). These
features make this family of op amps well suited for
battery-powered applications.
The single MCP616, the single MCP618 with Chip
Select (CS) and the dual MCP617 are all available in
standard 8-lead PDIP, SOIC and MSOP packages. The
quad MCP619 is offered in standard 14-lead PDIP,
SOIC and TSSOP packages. All devices are fully
specified from -40°C to +85°C, with power supplies
from 2.3V to 5.5V.
Package Types
0%
2%
4%
6%
8%
10%
12%
14%
-10
0
-8
0
-6
0
-4
0
-2
0
0
20
40
60
80
10
0
Input Offset Voltage (µV)
P
e
rc
en
ta
g
e
o
f O
c
c
u
rr
en
ce
s
598 Samples
V
DD
= 5.5V
V
IN
+
V
IN
–
V
SS
V
DD
V
OUT
1
2
3
4
8
7
6
5 NC
NC
NC
MCP616
PDIP, SOIC, MSOP
MCP617
PDIP, SOIC, MSOP
MCP618
PDIP, SOIC, MSOP
MCP619
PDIP, SOIC, TSSOP
V
INA
+
V
INA
–
V
SS
V
OUTB
V
INB
–
1
2
3
4
8
7
6
5 V
INB
+
V
DD
V
OUTA
V
IN
+
V
IN
–
V
SS
V
DD
V
OUT
1
2
3
4
8
7
6
5 NC
CS
NC
V
INA
+
V
INA
–
V
DD
V
IND
–
V
IND
+
1
2
3
4
14
13
12
11 V
SS
V
OUTD
V
OUTA
V
INB
–
V
INB
+
V
OUTB
V
INC
+
V
INC
–
5
6
7
10
9
8 V
OUTC
2.3V to 5.5V Micropower Bi-CMOS Op Amps
MCP616/7/8/9
DS21613C-page 2
© 2008 Microchip Technology Inc.
NOTES:
© 2008 Microchip Technology Inc.
DS21613C-page 3
MCP616/7/8/9
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
– V
SS
........................................................................7.0V
Current at Analog Input Pins (V
IN+
and V
IN–
)................±2 mA
Analog Inputs (V
IN
+ and V
IN
–) †† .. V
SS
– 0.3V to V
DD
+ 0.3V
All other Inputs and Outputs .......... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ................................... –65°C to +150°C
Maximum Junction Temperature (T
J
)......................... .+150°C
ESD Protection On All Pins (HBM; MM)
.............. ≥ 4 kV; 400V
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
††
See Section 4.1.2 “Input Voltage and Current Limits”.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
DD
= +2.3V to +5.5V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
≈ V
DD
/2 and R
L
= 100 k
Ω to V
DD
/2.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Offset
Input Offset Voltage
V
OS
–150
—
+150
µV
Input Offset Drift with Temperature
ΔV
OS
/
ΔT
A
—
±2.5
—
µV/°C
T
A
= -40°C to +85°C
Power Supply Rejection
PSRR
86
105
—
dB
Input Bias Current and Impedance
Input Bias Current
I
B
-35
-15
-5
nA
At Temperature
I
B
-70
-21
—
nA
T
A
= -40°C
At Temperature
I
B
—
-12
—
nA
T
A
= +85°C
Input Offset Current
I
OS
—
±0.15
—
nA
Common Mode Input Impedance
Z
CM
—
600||4
—
M
Ω||pF
Differential Input Impedance
Z
DIFF
—
3||2
—
M
Ω||pF
Common Mode
Common Mode Input Voltage Range
V
CMR
V
SS
V
DD
– 0.9
V
Common Mode Rejection Ratio
CMRR
80
100
—
dB
V
DD
= 5.0V,
V
CM
= 0.0V to 4.1V
Open-Loop Gain
DC Open-Loop Gain (large signal)
A
OL
100
120
—
dB
R
L
= 25 k
Ω to V
DD
/2,
V
OUT
= 0.05V to V
DD
– 0.05V
DC Open-Loop Gain (large signal)
A
OL
95
115
—
dB
R
L
= 5 k
Ω to V
DD
/2,
V
OUT
= 0.1V to V
DD
– 0.1V
Output
Maximum Output Voltage Swing
V
OL
, V
OH
V
SS
+ 15
—
V
DD
– 20
mV
R
L
= 25 k
Ω to V
DD
/2,
0.5V input overdrive
V
OL
, V
OH
V
SS
+ 45
—
V
DD
– 60
mV
R
L
= 5 k
Ω to V
DD
/2,
0.5V input overdrive
Linear Output Voltage Range
V
OUT
V
SS
+ 50
—
V
DD
– 50
mV
R
L
= 25 k
Ω to V
DD
/2,
A
OL
≥ 100 dB
V
OUT
V
SS
+ 100
—
V
DD
– 100
mV
R
L
= 5 k
Ω to V
DD
/2,
A
OL
≥ 95 dB
Output Short Circuit Current
I
SC
—
±7
—
mA
V
DD
= 2.3V
I
SC
—
±17
—
mA
V
DD
= 5.5V
Power Supply
Supply Voltage
V
DD
2.3
—
5.5
V
Quiescent Current per Amplifier
I
Q
12
19
25
µA
I
O
= 0
MCP616/7/8/9
DS21613C-page 4
© 2008 Microchip Technology Inc.
AC ELECTRICAL CHARACTERISTICS
MCP618 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
FIGURE 1-1:
Timing Diagram for the CS
Pin on the MCP618.
Electrical Specifications:
Unless otherwise indicated, V
DD
= +2.3V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2, V
OUT
≈ V
DD
/2,
R
L
= 100 k
Ω to V
DD
/2 and C
L
= 60 pF.
Parameters
Sym
Min
Typ
Max
Units
Conditions
AC Response
Gain Bandwidth Product
GBWP
—
190
—
kHz
Phase Margin
PM
—
57
—
°
G = +1V/V
Slew Rate
SR
—
0.08
—
V/µs
Noise
Input Noise Voltage
E
ni
—
2.2
—
µV
P-P
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
e
ni
—
32
—
nV/
√Hz
f = 1 kHz
Input Noise Current Density
i
ni
—
70
—
fA/
√Hz
f = 1 kHz
Electrical Specifications:
Unless otherwise indicated, V
DD
= +2.3V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2, V
OUT
≈ V
DD
/2,
R
L
= 100 k
Ω to V
DD
/2 and C
L
= 60 pF.
Parameters
Sym
Min
Typ
Max
Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
V
IL
V
SS
—
0.2 V
DD
V
CS Input Current, Low
I
CSL
–1.0
0.01
—
µA
CS = V
SS
CS High Specifications
CS Logic Threshold, High
V
IH
0.8 V
DD
—
V
DD
V
CS Input Current, High
I
CSH
—
0.01
2
µA
CS = V
DD
GND Current
I
SS
-2
-0.05
—
µA
CS = V
DD
Amplifier Output Leakage
I
O(LEAK)
—
10
—
nA
CS = V
DD
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
t
ON
—
9
100
µs
CS = 0.2V
DD
to V
OUT
= 0.9V
DD
/2,
G = +1 V/V, R
L
= 1 k
Ω to V
SS
CS High to Amplifier Output High-Z
t
OFF
—
0.1
—
µs
CS = 0.8V
DD
to V
OUT
= 0.1V
DD
/2,
G = +1 V/V, R
L
= 1 k
Ω to V
SS
CS Hysteresis
V
HYST
—
0.6
—
V
V
DD
= 5.0V
CS
V
OUT
I
SS
I
CS
V
IL
V
IH
t
ON
t
OFF
-50 nA
-50 nA
-19 µA
10 nA
10 nA
High-Z
High-Z
(typical)
(typical)
(typical)
(typical)
(typical)
© 2008 Microchip Technology Inc.
DS21613C-page 5
MCP616/7/8/9
TEMPERATURE CHARACTERISTICS
1.1
Test Circuits
The test circuits used for the DC and AC tests are
shown in
Figure 1-2
and
Figure 1-3
. The bypass
capacitors are laid out according to the rules discussed
in Section 4.6 “Supply Bypass”.
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
Electrical Specifications:
Unless otherwise indicated, V
DD
= +2.3V to +5.5V and V
SS
= GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
T
A
-40
—
+85
°C
Operating Temperature Range
T
A
-40
—
+125
°C
Note 1
Storage Temperature Range
T
A
-65
—
+150
°C
Thermal Package Resistances
Thermal Resistance, 8L-MSOP
θ
JA
—
211
—
°C/W
Thermal Resistance, 8L-PDIP
θ
JA
—
89.3
—
°C/W
Thermal Resistance, 8L-SOIC
θ
JA
—
149.5
—
°C/W
Thermal Resistance, 14L-PDIP
θ
JA
—
70
—
°C/W
Thermal Resistance, 14L-SOIC
θ
JA
—
95.3
—
°C/W
Thermal Resistance, 14L-TSSOP
θ
JA
—
100
—
°C/W
Note
1:
The MCP616/7/8/9 operate over this extended temperature range, but with reduced performance. In any case, the
Junction Temperature (T
J
) must not exceed the Absolute Maximum specification of +150°C.
V
DD
MCP61X
R
G
R
F
R
N
V
OUT
V
IN
V
DD
/2
1 µF
C
L
R
L
V
L
0.1 µF
V
DD
MCP61X
R
G
R
F
R
N
V
OUT
V
DD
/2
V
IN
1 µF
C
L
R
L
V
L
0.1 µF
MCP616/7/8/9
DS21613C-page 6
© 2008 Microchip Technology Inc.
NOTES:
© 2008 Microchip Technology Inc.
DS21613C-page 7
MCP616/7/8/9
2.0
TYPICAL PERFORMANCE CURVES
Note:
Unless otherwise indicated, V
DD
= +2.3V to +5.5V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2, V
OUT
≈ V
DD
/2,
R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-1:
Input Offset Voltage at
V
DD
= 5.5V.
FIGURE 2-2:
Input Offset Voltage at
V
DD
= 2.3V.
FIGURE 2-3:
Input Bias Current at
V
DD
= 5.5V.
FIGURE 2-4:
Input Offset Voltage Drift at
V
DD
= 5.5V.
FIGURE 2-5:
Input Offset Voltage Drift at
V
DD
= 2.3V.
FIGURE 2-6:
Input Offset Current at
V
DD
= 5.5V.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0%
2%
4%
6%
8%
10%
12%
14%
-100
-8
0
-6
0
-4
0
-2
0
0
20
40
60
80
100
Input Offset Voltage (µV)
P
e
rc
en
ta
g
e
o
f
O
c
c
u
rr
en
ce
s
598 Samples
V
DD
= 5.5V
0%
2%
4%
6%
8%
10%
12%
14%
16%
-100
-8
0
-6
0
-4
0
-2
0
0
20
40
60
80
100
Offset Voltage (µV)
Percen
ta
g
e
o
f Occu
rren
ces
598 Samples
V
DD
= 2.3V
0%
2%
4%
6%
8%
10%
12%
14%
16%
-2
2
-2
1
-2
0
-1
9
-1
8
-1
7
-1
6
-1
5
-1
4
-1
3
-1
2
-1
1
-1
0
Input Bias Current (nA)
Per
cen
ta
g
e
o
f O
ccu
rr
e
n
ces
600 Samples
V
DD
= 5.5V
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
20%
-1
0
-8
-6
-4
-2
0
2
4
6
8
10
Input Offset Voltage Drift (µV/°C)
Percen
ta
g
e
o
f Occu
rren
ces
598 Samples
V
DD
= 5.5V
T
A
= -40°C to +85°C
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
-1
0
-8
-6
-4
-2
0
2
4
6
8
10
Input Offset Voltage Drift (µV/°C)
Percen
ta
g
e
o
f Occu
rren
ces
598 Samples
V
DD
= 2.3V
T
A
= -40°C to +85°C
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
20%
-0
.7
-0
.6
-0
.5
-0
.4
-0
.3
-0
.2
-0
.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Input Offset Current (nA)
Percen
ta
g
e
o
f Occu
rren
ces
600 Samples
V
DD
= 5.5V
MCP616/7/8/9
DS21613C-page 8
© 2008 Microchip Technology Inc.
Note:
Unless otherwise indicated, V
DD
= +2.3V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2, V
OUT
≈ V
DD
/2,
R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-7:
Input Offset Voltage vs.
Ambient Temperature.
FIGURE 2-8:
Quiescent Current vs.
Ambient Temperature.
FIGURE 2-9:
Maximum Output Voltage
Swing vs. Ambient Temperature at R
L
= 5 k
Ω
.
FIGURE 2-10:
Input Bias, Offset Currents
vs. Ambient Temperature.
FIGURE 2-11:
CMRR, PSRR vs. Ambient
Temperature.
FIGURE 2-12:
Maximum Output Voltage
Swing vs. Ambient Temperature at R
L
= 25 k
Ω
.
-150
-100
-50
0
50
100
150
-50
-25
0
25
50
75
100
Ambient Temperature (°C)
Input Offs
e
t Volta
g
e
(µV)
V
DD
= 2.3V
V
DD
= 5.5V
Representative Part
0
2
4
6
8
10
12
14
16
18
20
22
24
-50
-25
0
25
50
75
100
Ambient Temperature (°C)
Qu
iescen
t Cu
rren
t
(µ
A/Amplif
ier)
V
DD
= 5.5V
V
DD
= 2.3V
0
5
10
15
20
25
30
35
40
-50
-25
0
25
50
75
100
Ambient Temperature (°C)
Output Voltage Headroom
(mV)
R
L
= 5 k
V
DD
= 5.5V
V
DD
= 2.3V
V
OL
– V
SS
V
DD
– V
OH
-25
-20
-15
-10
-5
0
-50
-25
0
25
50
75
100
Ambient Temperature (°C)
Input B
ia
s
C
u
rre
nt (nA
)
0.0
0.2
0.4
0.6
0.8
1.0
Input Offs
e
t C
u
rre
nt (nA
)
I
OS
I
B
V
DD
= 5.5V
80
85
90
95
100
105
110
115
120
-50
-25
0
25
50
75
100
Ambient Temperature (°C)
CMRR, PSRR (
d
B)
PSRR
CMRR
0
1
2
3
4
5
6
7
8
9
-50
-25
0
25
50
75
100
Ambient Temperature (°C)
Output Voltage Headroom
(mV)
R
L
= 25 k
V
DD
= 5.5V
V
DD
= 2.3V
V
OL
– V
SS
V
DD
– V
OH
© 2008 Microchip Technology Inc.
DS21613C-page 9
MCP616/7/8/9
Note:
Unless otherwise indicated, V
DD
= +2.3V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2, V
OUT
≈ V
DD
/2,
R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-13:
Output Short Circuit Current
vs. Ambient Temperature.
FIGURE 2-14:
Slew Rate vs. Ambient
Temperature.
FIGURE 2-15:
Input Bias, Offset Currents
vs. Common Mode Input Voltage.
FIGURE 2-16:
Gain Bandwidth Product,
Phase Margin vs. Ambient Temperature.
FIGURE 2-17:
Input Offset Voltage vs.
Common Mode Input Voltage.
FIGURE 2-18:
Input Offset Voltage vs.
Output Voltage.
0
5
10
15
20
25
-50
-25
0
25
50
75
100
Ambient Temperature (°C)
Output Short C
irc
uit C
u
rre
nt
(mA
)
I
SC+
V
DD
= 5.5V
V
DD
= 2.3V
| I
SC–
|
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
-50
-25
0
25
50
75
100
Ambient Temperature (°C)
S
le
w
R
a
te
(V
/µ
s
)
V
DD
= 5.0V
Low-to-High Transition
High-to-Low Transition
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Common Mode Input Voltage (V)
Input B
ia
s
C
u
rre
nt (nA
)
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
0.05
0.10
0.15
0.20
0.25
0.30
Input Offs
e
t C
u
rre
nt (nA
)
V
DD
= 5.5V
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
I
OS
I
B
0
20
40
60
80
100
120
140
160
180
200
-50
-25
0
25
50
75
100
Ambient Temperature (°C)
Ga
in B
a
ndwidth Produc
t
(k
H
z
)
0
10
20
30
40
50
60
70
80
90
100
Ph
ase Marg
in
(
°)
GBWP
PM
-100
-80
-60
-40
-20
0
20
40
60
80
100
-0
.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Common Mode Input Voltage (V)
Input Offs
e
t Volta
g
e
(µV)
V
DD
= 5.5V
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
-50
-40
-30
-20
-10
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Output Voltage (V)
Input Offset Voltage (μV)
V
DD
= 5.5V
V
DD
= 2.3V
R
L
= 25 k
MCP616/7/8/9
DS21613C-page 10
© 2008 Microchip Technology Inc.
Note:
Unless otherwise indicated, V
DD
= +2.3V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2, V
OUT
≈ V
DD
/2,
R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-19:
Quiescent Current vs.
Power Supply Voltage.
FIGURE 2-20:
DC Open-Loop Gain vs.
Load Resistance.
FIGURE 2-21:
Gain-Bandwidth Product,
Phase Margin vs. Load Resistance.
FIGURE 2-22:
Output Voltage Headroom
vs. Output Current Magnitude
.
FIGURE 2-23:
DC Open-Loop Gain vs.
Power Supply Voltage.
FIGURE 2-24:
Channel-to-Channel
Separation vs. Frequency (MCP617 and
MCP619 only).
0
5
10
15
20
25
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
Qu
iescen
t Cu
rren
t
(µ
A/Amplif
ier)
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
90
95
100
105
110
115
120
125
130
0.1
1
10
100
Load Resistance (
Ω)
DC Open-Loop Gain (dB)
V
DD
= 2.3V
V
DD
= 5.5V
100
1k
10k
100k
0
20
40
60
80
100
120
140
160
180
200
1
10
100
1,000
Load Resistance (
Ω)
Gain Bandwidth Product
(kHz)
0
10
20
30
40
50
60
70
80
90
100
P
h
ase Mar
g
in
(°
)
PM
GBWP
1k
10k
100k
1M
1
10
100
1,000
0.01
0.1
1
10
Output Current Magnitude (A)
O
u
tput V
o
lt
age Headr
oom
(m
V
)
10µ
100µ
1m
10m
V
DD
– V
OH
V
OL
– V
SS
V
DD
= 2.3V
V
DD
= 5.5V
105
110
115
120
125
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Power Supply Voltage (V)
DC Open-Loop Gain (dB)
R
L
= 25 k
70
80
90
100
110
120
130
140
1.E+02
1.E+03
1.E+04
1.E+05
Frequency (Hz)
Channel-to-Channel
Seperation (dB)
Referred to Input
100
100k
10k
1k