2016 Microchip Technology Inc.
DS20005516A-page 1
2N6661
Features
• Free from secondary breakdown
• Low power drive requirement
• Ease of paralleling
• Low C
ISS
and fast switching speeds
• Excellent thermal stability
• Integral source-drain diode
• High input impedance and high gain
Applications
• Motor controls
• Converters
• Amplifiers
• Switches
• Power supply circuits
• Drivers: relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.
Description
2N6661 is an enhancement-mode (normally-off) tran-
sistor that utilizes a vertical DMOS structure and a well-
proven silicon-gate manufacturing process. This com-
bination produces a device with the power-handling
capabilities of bipolar transistors, and the high input
impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS struc-
tures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very-
low threshold voltage, high breakdown voltage, high-
input impedance, low-input capacitance, and fast
switching speeds are desired.
Package Types
TO-39
See
Table 2-1
for pin information
Case: Drain
GATE
SOURCE
DRAIN
N-Channel, Enhancement-Mode, Vertical DMOS FET
2N6661
DS20005516A-page 2
2016 Microchip Technology Inc.
1.0
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
†
Drain-to-source voltage .........................................................................................................................................BV
DSS
Drain-to-gate voltage.............................................................................................................................................BV
DGS
Gate-to-source voltage............................................................................................................................................ ±20V
Operating and Storage Temperature.......................................................................................................... -55 to 150 °C
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
2: Specification is obtained by characterization and is not 100% tested.
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, for all specifications T
A
= +25°C
Parameter
Symbol
Min
Typ
Max
Units Conditions
DC Parameters (
Note 1
, unless otherwise stated)
Drain-to-source breakdown voltage
BV
DSS
90
-
-
V
V
GS
= 0V, I
D
= 10µA
Gate threshold voltage
V
GS(th)
0.8
-
2.0
V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS(th)
change with temperature
∆V
GS(th)
-
-3.8
-5.5
mV/°C V
GS
= V
DS
, I
D
= 1.0mA (
Note 2
)
Gate body leakage current
I
GSS
-
-
100
nA
V
GS
= ±20V, V
DS
= 0V
Zero gate voltage drain current
I
DSS
-
-
10
µA
V
GS
= 0V, V
DS
= Max rating
-
-
500
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125°C (
Note 2
)
On-state drain current
I
D(ON)
1.5
-
-
A
V
GS
= 10V, V
DS
= 10V
Static drain-to-source on-state
resistance
R
DS(ON)
-
-
5.0
Ω
V
GS
= 5.0V, I
D
= 0.3A
-
-
4.0
V
GS
= 10V, I
D
= 1.0A
AC Parameters (
Note 2
)
Forward transconductance
G
FS
170
-
-
mmho V
DS
= 25V, I
D
= 0.5A
Input capacitance
C
ISS
-
-
50
pF
V
GS
= 0V,
V
DS
= 24V,
f = 1.0MHz
Common source output capacitance
C
OSS
-
-
40
Reverse transfer capacitance
C
RSS
-
-
10
Turn-on time
t
(ON)
-
-
10
ns
V
DD
= 25V, I
D
= 1.0A,
R
GEN
= 25Ω
Turn-off time
t
(OFF)
-
-
10
Diode Parameters
Diode forward voltage drop
V
SD
-
1.2
-
V
V
GS
= 0V, I
SD
= 1.0A (
Note 1
)
Reverse recovery time
t
rr
-
350
-
ns
V
GS
= 0V, I
SD
= 1.0A (
Note 2
)
TEMPERATURE SPECIFICATIONS
Parameter
Symbol
Min
Typ
Max
Units Conditions
Temperature Ranges
Operating and Storage Temperature
T
A
-55
–
150
°C
2016 Microchip Technology Inc.
DS20005516A-page 3
2N6661
Note 1: I
D
(continuous) is limited by max rated T
J
.
2.0
PIN DESCRIPTION
The locations of the pins are listed in
Package Types
and
Packaging Information
.
THERMAL CHARACTERISTICS
Package
I
D
(
1
)
continuous
(mA)
I
D
pulsed
(A)
Power
Dissipation
@T
A
= 25°C (W)
I
DR
(
1
)
(mA)
I
DRM
(A)
TO-39 350
3.0
6.25
350
3.0
Product Summary
BV
DSX
/BV
DGS
(V)
R
DS(ON)
(max) (Ω)
I
DSS
(min) (A)
90
4.0
1.5
TABLE 2-1:
PIN DESCRIPTION
Pin # TO-39
Function
1
SOURCE
2
GATE
3
DRAIN
2N6661
DS20005516A-page 4
2016 Microchip Technology Inc.
3.0
FUNCTIONAL DESCRIPTION
Figure 3-1
shows the switching waveform and test cir-
cuit for 2N6661.
FIGURE 3-1:
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
Pulse
Generator
VDD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
10V
VDD
R
GEN
0V
0V
t
f
2016 Microchip Technology Inc.
DS20005516A-page 5
2N6661
4.0
PACKAGING INFORMATION
4.1
Package Marking Information
Legend: XX...X
Product Code or Customer-specific information
Y
Year code (last digit of calendar year)
YY
Year code (last 2 digits of calendar year)
WW
Week code (week of January 1 is week ‘01’)
NNN
Alphanumeric traceability code
Pb-free JEDEC
®
designator for Matte Tin (Sn)
*
This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note:
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
3
e
3
e
3-Lead TO-39
Example
NNN
YYWW
XXXXXXXXXX
XX
e4
343
1605
2N6661
e4
2N6661
DS20005516A-page 6
2016 Microchip Technology Inc.
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
2016 Microchip Technology Inc.
DS20005516A-page 7
2N6661
APPENDIX A: REVISION HISTORY
Revision A (March 2016)
• Converted Supertex Doc #DSFP-2N6661 to
Microchip DS20005516A.
• Minor text changes throughout.
• Update to
Features
.
2N6661
DS20005516A-page 8
2016 Microchip Technology Inc.
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office
.
Device:
2N6661 = N-Channel, Enhancement-Mode,
Vertical DMOS FET
Package:
(blank) = TO-39, 3-lead
Environmental
(blank) = Lead (Pb)-free/ROHS-compliant package
Media Type:
(blank) = 500/Bag for TO-39 packages
Examples:
a)
2N6661
TO-39 package,
500/bag
PART NO.
X
Device
X
Environmental
XX
Package
Options
Media
-
-
Type
2016 Microchip Technology Inc.
DS20005516A-page 9
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
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OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
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conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
The Microchip name and logo, the Microchip logo, AnyRate,
dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq,
KeeLoq logo, Kleer, LANCheck, LINK MD, MediaLB, MOST,
MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo,
RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O
are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
ClockWorks, The Embedded Control Solutions Company,
ETHERSYNCH, Hyper Speed Control, HyperLight Load,
IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut,
BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, Dynamic Average Matching, DAM, ECAN,
EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip
Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi,
motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB,
MPLINK, MultiTRAK, NetDetach, Omniscient Code
Generation, PICDEM, PICDEM.net, PICkit, PICtail,
PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker,
Serial Quad I/O, SQI, SuperSwitcher, SuperSwitcher II, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademarks of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2016, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
ISBN: 978-1-5224-0432-3
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
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•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
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are for its PIC
®
MCUs and dsPIC
®
DSCs, K
EE
L
OQ
®
code hopping
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QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
==
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==
DS20005516A-page 10
2016 Microchip Technology Inc.
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