© 2010 Microchip Technology Inc.
DS22142B-page 1
MCP6071/2/4
Features
• Low Offset Voltage:
±
150 µV (maximum)
• Low Quiescent Current:
110 µA (typical)
• Rail-to-Rail Input and Output
• Wide Supply Voltage Range: 1.8V to 6.0V
• Gain Bandwidth Product: 1.2 MHz (typical)
• Unity Gain Stable
• Extended Temperature Range: -40°C to +125°C
• No Phase Reversal
Applications
• Automotive
• Portable Instrumentation
• Sensor Conditioning
• Battery Powered Systems
• Medical Instrumentation
• Test Equipment
• Analog Filters
Design Aids
• SPICE Macro Models
• FilterLab
®
Software
• MAPS (Microchip Advanced Part Selector)
• Analog Demonstration and Evaluation Boards
• Application Notes
Typical Application
Description
The Microchip Technology Inc. MCP6071/2/4 family of
operational amplifiers (op amps) has low input offset
voltage (
±
150 µV, maximum) and rail-to-rail input and
output operation. This family is unity gain stable and
has a gain bandwidth product of 1.2 MHz (typical).
These devices operate with a single supply voltage as
low as 1.8V, while drawing low quiescent current per
amplifier (110 µA, typical). These features make the
family of op amps well suited for single-supply, high
precision, battery-powered applications.
The MCP6071/2/4 family is offered in single
(MCP6071), dual (MCP6072), and quad (MCP6074)
configurations.
The MCP6071/2/4 is designed with Microchip’s
advanced CMOS process. All devices are available in
the extended temperature range, with a power supply
range of 1.8V to 6.0V.
Package Types
R
L
V
OUT
Gyrator
Z
IN
R
C
Z
IN
R
L
j
ωL
+
=
L
R
L
RC
=
MCP6071
* Includes Exposed Thermal Pad (EP); see
Table 3-1
.
1
2
3
4
8
7
6
5
EP
9
V
DD
V
OUT
NC
NC
V
IN
+
V
IN
–
V
SS
NC
1
2
3
4
8
7
6
5
EP
9
V
OUTB
V
INB
–
V
INB
+
V
DD
V
INA
+
V
INA
–
V
SS
V
OUTA
V
INA
+
V
INA
–
V
DD
1
2
3
4
14
13
12
11
V
OUTA
V
OUTD
V
IND
–
V
IND
+
V
SS
V
INB
+ 5
10 V
INC
+
V
INB
– 6
9
V
OUTB
7
8 V
OUTC
V
INC
–
V
INA
+
V
INA
–
V
SS
1
2
3
4
8
7
6
5
V
OUTA
V
DD
V
OUTB
V
INB
–
V
INB
+
V
IN
+
V
IN
–
V
SS
1
2
3
4
8
7
6
5
NC
NC
V
DD
V
OUT
NC
MCP6071
SOIC
MCP6071
2x3 TDFN
MCP6072
2x3 TDFN
MCP6072
SOIC
MCP6074
SOIC, TSSOP
V
IN
+
V
IN
–
V
SS
1
2
3
5
4
V
DD
V
OUT
MCP6071
SOT-23-5
110 µA, High Precision Op Amps
MCP6071/2/4
DS22142B-page 2
© 2010 Microchip Technology Inc.
NOTES:
© 2010 Microchip Technology Inc.
DS22142B-page 3
MCP6071/2/4
1.0
ELECTRICAL CHARACTERISTICS
1.1
Absolute Maximum Ratings †
V
DD
– V
SS
........................................................................7.0V
Current at Input Pins .....................................................±2 mA
Analog Inputs (V
IN
+
, V
IN
-
)†† .......... V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs ......... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short-Circuit Current .................................continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature (T
J
) .......................... +150°C
ESD protection on all pins (HBM; MM)
................ ≥ 4 kV; 400V
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational listings of this
specification is not implied. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
†† See
4.1.2 “Input Voltage Limits”
1.2
Specifications
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, V
DD
= +1.8V to +6.0V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
≈ V
DD
/2, V
L
= V
DD
/2 and R
L
= 10 k
Ω to V
L
. (Refer to
Figure 1-1
).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Offset
Input Offset Voltage
V
OS
-150
—
+150
µV
V
DD
= 3.0V,
V
CM
= V
DD
/3
Input Offset Drift with Temperature
ΔV
OS
/
ΔT
A
—
±1.5
—
µV/°C T
A
= -40°C to +85°C,
V
DD
= 3.0V, V
CM
= V
DD
/3
ΔV
OS
/
ΔT
A
—
±4.0
—
µV/°C T
A
= +85°C to +125°C,
V
DD
= 3.0V, V
CM
= V
DD
/3
Power Supply Rejection Ratio
PSRR
70
87
—
dB
V
CM
= V
SS
Input Bias Current and Impedance
Input Bias Current
I
B
—
±1.0
100
pA
I
B
—
60
—
pA
T
A
= +85°C
I
B
—
1100
5000
pA
T
A
= +125°C
Input Offset Current
I
OS
—
±1.0
—
pA
Common Mode Input Impedance
Z
CM
—
10
13
||6
—
Ω||pF
Differential Input Impedance
Z
DIFF
—
10
13
||6
—
Ω||pF
Common Mode
Common Mode Input Voltage Range
V
CMR
V
SS
−0.15
—
V
DD
+0.15
V
V
DD
= 1.8V
(
Note 1
)
V
CMR
V
SS
−0.3
—
V
DD
+0.3
V
V
DD
= 6.0V
(
Note 1
)
Common Mode Rejection Ratio
CMRR
72
89
—
dB
V
CM
= -0.15V to 1.95V,
V
DD
= 1.8V
74
91
—
dB
V
CM
= -0.3V to 6.3V,
V
DD
= 6.0V
72
87
—
dB
V
CM
= 3.0V to 6.3V,
V
DD
= 6.0V
74
89
—
dB
V
CM
= -0.3V to 3.0V,
V
DD
= 6.0V
Note 1:
Figure 2-13
shows how V
CMR
changed across temperature.
MCP6071/2/4
DS22142B-page 4
© 2010 Microchip Technology Inc.
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
TABLE 1-3:
TEMPERATURE SPECIFICATIONS
Open-Loop Gain
DC Open-Loop Gain
(Large Signal)
A
OL
95
115
—
dB
0.2V < V
OUT
<(V
DD
-0.2V)
V
CM
= V
SS
Output
Maximum Output Voltage Swing
V
OL,
V
OH
V
SS
+15
—
V
DD
–15
mV
0.5V input overdrive
Output Short-Circuit Current
I
SC
—
±7
—
mA
V
DD
= 1.8V
—
±28
—
mA
V
DD
= 6.0V
Power Supply
Supply Voltage
V
DD
1.8
—
6.0
V
Quiescent Current per Amplifier
I
Q
50
110
170
µA
I
O
= 0, V
DD
= 6.0V
V
CM
= 0.9V
DD
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8 to +6.0V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈ V
DD
/2, V
L
= V
DD
/2, R
L
= 10 k
Ω to V
L
and C
L
= 60 pF. (Refer to
Figure 1-1
).
Parameters
Sym
Min
Typ
Max
Units
Conditions
AC Response
Gain Bandwidth Product
GBWP
—
1.2
—
MHz
Phase Margin
PM
—
57
—
°
G = +1 V/V
Slew Rate
SR
—
0.5
—
V/µs
Noise
Input Noise Voltage
E
ni
—
4.3
—
µVp-p
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
e
ni
—
19
—
nV/
√Hz f = 10 kHz
Input Noise Current Density
i
ni
—
0.6
—
fA/
√Hz f = 1 kHz
Electrical Characteristics: Unless otherwise indicated, V
DD
= +1.8V to +6.0V and V
SS
= GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Operating Temperature Range
T
A
-40
—
+125
°C
Note 1
Storage Temperature Range
T
A
-65
—
+150
°C
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
θ
JA
—
220.7
—
°C/W
Thermal Resistance, 8L-2x3 TDFN
θ
JA
—
52.5
—
°C/W
Thermal Resistance, 8L-SOIC
θ
JA
—
149.5
—
°C/W
Thermal Resistance, 14L-SOIC
θ
JA
—
95.3
—
°C/W
Thermal Resistance, 14L-TSSOP
θ
JA
—
100
—
°C/W
Note 1: The internal junction temperature (T
J
) must not exceed the absolute maximum specification of +150°C.
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, V
DD
= +1.8V to +6.0V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
≈ V
DD
/2, V
L
= V
DD
/2 and R
L
= 10 k
Ω to V
L
. (Refer to
Figure 1-1
).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note 1:
Figure 2-13
shows how V
CMR
changed across temperature.
© 2010 Microchip Technology Inc.
DS22142B-page 5
MCP6071/2/4
1.3
Test Circuits
The circuit used for most DC and AC tests is shown in
Figure 1-1
. This circuit can independently set V
CM
and
V
OUT
; see
Equation 1-1
. Note that V
CM
is not the
circuit’s common mode voltage ((V
P
+ V
M
)/2), and that
V
OST
includes V
OS
plus the effects (on the input offset
error, V
OST
) of temperature, CMRR, PSRR and A
OL
.
EQUATION 1-1:
FIGURE 1-1:
AC and DC Test Circuit for
Most Specifications.
G
DM
R
F
R
G
⁄
=
V
C M
V
P
V
DD
2
⁄
+
(
) 2
⁄
=
V
OUT
V
DD
2
⁄
(
)
V
P
V
M
–
(
) V
OST
1
G
DM
+
(
)
+
+
=
Where:
G
DM
= Differential Mode Gain
(V/V)
V
CM
= Op Amp’s Common Mode
Input Voltage
(V)
V
OST
= Op Amp’s Total Input Offset
Voltage
(mV)
V
OST
V
IN–
V
IN+
–
=
V
DD
R
G
R
F
V
OUT
V
M
C
B2
C
L
R
L
V
L
C
B1
100 k
Ω
100 k
Ω
R
G
R
F
V
DD
/2
V
P
100 k
Ω
100 k
Ω
60 pF
10 k
Ω
1 µF
100 nF
V
IN–
V
IN+
C
F
6.8 pF
C
F
6.8 pF
MCP607X
MCP6071/2/4
DS22142B-page 6
© 2010 Microchip Technology Inc.
NOTES:
© 2010 Microchip Technology Inc.
DS22142B-page 7
MCP6071/2/4
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +6.0V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈ V
DD
/2,
V
L
= V
DD
/2, R
L
= 10 k
Ω to V
L
and C
L
= 60 pF.
FIGURE 2-1:
Input Offset Voltage with
V
DD
= 3.0V.
FIGURE 2-2:
Input Offset Voltage Drift
with V
DD
= 3.0V and T
A
≤
+85°C.
FIGURE 2-3:
Input Offset Voltage Drift
with V
DD
= 3.0V and T
A
≥
+85°C.
FIGURE 2-4:
Input Offset Voltage vs.
Common Mode Input Voltage with V
DD
= 6.0V.
FIGURE 2-5:
Input Offset Voltage vs.
Common Mode Input Voltage with V
DD
= 3.0V.
FIGURE 2-6:
Input Offset Voltage vs.
Common Mode Input Voltage with V
DD
= 1.8V.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0%
2%
4%
6%
8%
10%
12%
14%
-1
5
0
-120
-9
0
-6
0
-3
0
0
30
60
90
120
150
Input Offset Voltage (µV)
P
e
rc
e
n
ta
ge
of
O
c
c
u
re
nc
e
s
1244 Samples
V
DD
= 3.0V
V
CM
= V
DD
/3
0%
3%
6%
9%
12%
15%
18%
21%
24%
27%
-20
-16
-12
-8
-4
0
4
8
12
16
20
Input Offset Drift with Temperature (µV/°C)
P
e
rcent
a
g
e o
f
Oc
cu
re
n
ces
1244 Samples
V
DD
= 3.0V
V
CM
= V
DD
/3
T
A
= -40
°C to +85°C
0%
3%
6%
9%
12%
15%
18%
21%
24%
27%
-20
-16
-1
2
-8
-4
0
4
8
12
16
20
Input Offset Drift with Temperature (µV/°C)
P
e
rcen
ta
g
e
o
f
O
c
cu
re
n
ces
1244 Samples
V
DD
= 3.0V
V
CM
= V
DD
/3
T
A
= +85°C to +125°C
-1000
-800
-600
-400
-200
0
200
400
600
800
1000
-0.
5
0.
0
0.
5
1.
0
1.
5
2.
0
2.
5
3.
0
3.
5
4.
0
4.
5
5.
0
5.
5
6.
0
6.
5
Common Mode Input Voltage (V)
In
p
u
t O
ff
s
et
V
o
lt
a
g
e
(
µ
V
)
T
A
= -40
°C
T
A
= +25°C
T
A
= +85°C
T
A
= +125°C
V
DD
= 6.0V
Representative Part
-1000
-800
-600
-400
-200
0
200
400
600
800
1000
-0
.5
-0
.2
0.
1
0.
4
0.
7
1.
0
1.
3
1.
6
1.
9
2.
2
2.
5
2.
8
3.
1
3.
4
Common Mode Input Voltage (V)
In
pu
t O
ffs
e
t
V
o
lt
ag
e
(
µ
V
)
T
A
= -40
°C
T
A
= +25°C
T
A
= +85°C
T
A
= +125°C
V
DD
= 3.0V
Representative Part
-1000
-800
-600
-400
-200
0
200
400
600
800
1000
-0
.5
-0
.3
-0
.1
0.
1
0.3
0.5
0.
7
0.9
1.1
1.3
1.5
1.7
1.
9
2.1
2.3
Common Mode Input Voltage (V)
Input
O
ff
s
e
t
V
o
lt
ag
e
(µV
)
V
DD
= 1.8V
Representative Part
T
A
= -40°C
T
A
= +25°C
T
A
= +85°C
T
A
= +125°C
MCP6071/2/4
DS22142B-page 8
© 2010 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +6.0V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈ V
DD
/2,
V
L
= V
DD
/2, R
L
= 10 k
Ω to V
L
and C
L
= 60 pF.
FIGURE 2-7:
Input Offset Voltage vs.
Output Voltage.
FIGURE 2-8:
Input Offset Voltage vs.
Power Supply Voltage.
FIGURE 2-9:
Input Noise Voltage Density
vs. Frequency.
FIGURE 2-10:
Input Noise Voltage Density
vs. Common Mode Input Voltage.
FIGURE 2-11:
CMRR, PSRR vs.
Frequency.
FIGURE 2-12:
CMRR, PSRR vs. Ambient
Temperature.
-350
-250
-150
-50
50
150
250
350
0.
0
0.
5
1.
0
1.
5
2.
0
2.
5
3.
0
3.
5
4.
0
4.
5
5.
0
5.
5
6.
0
Output Voltage (V)
In
pu
t O
ffs
et
V
o
lt
a
g
e (
µ
V
)
V
DD
= 6.0V
V
DD
= 1.8V
V
DD
= 3.0V
Representative Part
-1000
-800
-600
-400
-200
0
200
400
600
800
1000
1.
5
2.
0
2.
5
3.
0
3.
5
4.
0
4.
5
5.
0
5.
5
6.
0
6.
5
Power Supply Voltage (V)
In
p
u
t O
ff
s
et
Vo
lt
a
g
e
(
µ
V)
T
A
= -40°C
T
A
= +25°C
T
A
= +85°C
T
A
= +125°C
Representative Part
10
100
1,000
1.E-1
1.E+0
1.E+1
1.E+2
1.E+3
1.E+4
1.E+5
Frequency (Hz)
Input
N
o
is
e V
o
lt
a
g
e
D
e
ns
it
y
(n
V/
√Hz
)
0.1 1 10 100 1k 10k 100k
0
5
10
15
20
25
30
35
40
-0
.5
0.
0
0.
5
1.
0
1.
5
2.
0
2.
5
3.
0
3.
5
4.
0
4.
5
5.
0
5.
5
6.
0
6.
5
Common Mode Input Voltage (V)
Input
N
o
is
e
V
o
lt
a
g
e
D
e
ns
it
y
(n
V
/√
Hz
)
f = 10 kHz
V
DD
= 6.0V
20
30
40
50
60
70
80
90
100
110
10
100
1000
10000
100000
1000000
Frequency (Hz)
CM
RR,
P
S
RR
(d
B)
Representative Part
CMRR
PSRR+
PSRR-
10 100 1k 10k 100k 1M
60
65
70
75
80
85
90
95
100
105
110
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
P
S
R
R,
CM
RR
(d
B)
PSRR (V
DD
= 1.8V to 6.0V, V
CM
= V
SS
)
CMRR (V
DD
= 6.0V, V
CM
= -0.3V to 6.3V)
© 2010 Microchip Technology Inc.
DS22142B-page 9
MCP6071/2/4
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +6.0V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈ V
DD
/2,
V
L
= V
DD
/2, R
L
= 10 k
Ω to V
L
and C
L
= 60 pF.
FIGURE 2-13:
Common Mode Input
Voltage Range Limit vs. Ambient Temperature.
FIGURE 2-14:
Input Bias, Offset Currents
vs. Ambient Temperature.
FIGURE 2-15:
Input Bias Current vs.
Common Mode Input Voltage.
FIGURE 2-16:
Quiescent Current vs
Ambient Temperature with V
CM
= 0.9V
DD
.
FIGURE 2-17:
Quiescent Current vs.
Power Supply Voltage with V
CM
= 0.9V
DD
.
FIGURE 2-18:
Open-Loop Gain, Phase vs.
Frequency.
-0.35
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
C
o
m
m
o
n
M
o
de
Inpu
t
V
o
lt
ag
e
R
a
nge L
im
it
(V
)
V
CMR_L
- V
SS
@ V
DD
= 1.8V
V
OL
- V
SS
@ V
DD
= 3.0V
V
OL
- V
SS
@ V
DD
= 6.0V
V
CMR_H
- V
DD
@ V
DD
= 6.0V
@ V
DD
= 3.0V
@ V
DD
= 1.8V
1
10
100
1000
10000
25
45
65
85
105
125
Ambient Temperature (°C)
Input
B
ia
s
a
nd O
ffs
et
C
u
rr
en
ts (p
A
)
V
DD
= 6.0V
V
CM
= V
DD
Input Bias Current
Input Offset Current
1
10
100
1000
10000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Common Mode Input Votlage (V)
Input
B
ia
s
C
u
rr
e
n
t (p
A
)
V
DD
= 6.0V
T
A
= +125°C
T
A
= +85°C
60
70
80
90
100
110
120
130
140
150
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
Q
u
ie
s
cen
t C
u
rr
ent
(µ
A/
Am
p
li
fi
er
)
V
DD
= 6.0V
V
CM
= 0.9V
DD
V
DD
= 1.8V
V
CM
= 0.9V
DD
0
20
40
60
80
100
120
140
160
180
0.
0
0.
5
1.
0
1.
5
2.
0
2.
5
3.
0
3.
5
4.
0
4.
5
5.
0
5.
5
6.
0
6.
5
7.
0
Power Supply Voltage (V)
Q
u
ie
s
cen
t C
u
rr
en
t
(µ
A/
Am
p
li
fi
e
r)
V
DD
= 6.0V
V
CM
= 0.9V
DD
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
-20
0
20
40
60
80
100
120
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07
Frequency (Hz)
O
p
e
n
-L
oo
p G
a
in
(
d
B
)
-210
-180
-150
-120
-90
-60
-30
0
Op
e
n
-L
oo
p
P
h
as
e
(
°)
Open-Loop Gain
Open-Loop Phase
V
DD
= 6.0V
0.1 1 10 100 1k 10k 100k 1M 10M
Frequency (Hz)
MCP6071/2/4
DS22142B-page 10
© 2010 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +6.0V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈ V
DD
/2,
V
L
= V
DD
/2, R
L
= 10 k
Ω to V
L
and C
L
= 60 pF.
FIGURE 2-19:
DC Open-Loop Gain vs.
Power Supply Voltage.
FIGURE 2-20:
DC Open-Loop Gain vs.
Output Voltage Headroom.
FIGURE 2-21:
Channel-to-Channel
Separation vs. Frequency ( MCP6072/4 only).
FIGURE 2-22:
Gain Bandwidth Product,
Phase Margin vs. Common Mode Input Voltage.
FIGURE 2-23:
Gain Bandwidth Product,
Phase Margin vs. Ambient Temperature.
FIGURE 2-24:
Gain Bandwidth Product,
Phase Margin vs. Ambient Temperature.
100
105
110
115
120
125
130
135
140
145
150
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Power Supply Voltage (V)
D
C
-O
pe
n-L
o
op G
a
in
(d
B
)
R
L
= 10 k
Ω
V
SS
+ 0.2V < V
OUT
< V
DD
- 0.2V
100
105
110
115
120
125
130
135
140
145
150
0.00
0.05
0.10
0.15
0.20
0.25
Output Voltage Headroom
V
DD
- V
OH
or V
OL
- V
SS
(V)
D
C
-O
pe
n-
L
oop
G
a
in
(d
B
)
V
DD
= 6.0V
V
DD
= 1.8V
Large Signal A
OL
80
90
100
110
120
130
140
150
1.00E+02 1.00E+03 1.00E+04 1.00E+05 1.00E+06
Frequency (Hz)
Ch
a
n
n
e
l t
o
Ch
a
n
n
e
l
Se
pa
ra
ti
o
n
(
d
B
)
Input Referred
100 1k 10k 100k 1M
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-0
.5
0.
0
0.
5
1.
0
1.
5
2.
0
2.
5
3.
0
3.
5
4.
0
4.
5
5.
0
5.
5
6.
0
6.
5
Common Mode Input Voltage (V)
Ga
in
B
a
nd
wi
dt
h
Pr
o
duc
t
(MH
z)
0
20
40
60
80
100
120
140
160
180
Ph
as
e M
ar
g
in
(
°)
Phase Margin
Gain Bandwidth Product
V
DD
= 6.0V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100 125
Ambient Temperature (°C)
G
ai
n
B
a
nd
wi
dt
h
Pr
o
duc
t
(MH
z)
0
20
40
60
80
100
120
140
160
180
Ph
a
se
M
a
rg
in
(
°)
Gain Bandwidth Product
Phase Margin
V
DD
= 6.0V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100 125
Ambient Temperature (°C)
Gai
n
B
and
w
idt
h P
ro
duc
t
(MH
z)
0
20
40
60
80
100
120
140
160
180
P
h
as
e M
ar
g
in
(
°)
Gain Bandwidth Product
Phase Margin
V
DD
= 1.8V