TLE4916-1K_Structured_book.book

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Sense & Control

Datasheet

 
Rev.1.0, 2010-02-23
 

TLE4916-1K

Low Power Automotive Hall Switch

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Edition 2010-02-23
Published by

 

Infineon Technologies AG

 

81726 Munich, Germany

© 

2010

 

Infineon Technologies AG

 

All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or 

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any 

information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties 

and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights 

of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest 

Infineon Technologies Office (

www.infineon.com

).

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 Datasheet

1

Rev.1.0,  2010-02-23

 

  

TLE4916-1K

TLE4916-1K Low-Power Automotive Hall Switch
  
Revision History: 2010-02-23, Rev.1.0
Previous Version: 
Page

Subjects (major changes since last revision)

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TLE4916-1K

Table of Contents

 Datasheet

2

Rev.1.0,  2010-02-23

 

   

1

Product Description  3

1.1

Overview  3

1.2

Features  3

1.3

Target Applications  3

2

Functional Description  4

2.1

General  4

2.2

Pin Configuration (top view)  4

2.3

Pin Description  4

2.4

Block Diagram  5

2.5

Functional Block Description  5

3

Specification  7

3.1

Application Circuit  7

3.2

Absolute Maximum Ratings  8

3.3

Operating Range  8

3.4

Electrical and Magnetic Characteristics  9

4

Package Information  11

4.1

Package Outline SC59  11

4.2

Footprint  12

4.3

Distance between Chip and Package  13

4.4

Package Marking  13

Table of Contents

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Product Name

Product Type

Ordering Code

Package

TLE4916-1K

Low Power Hall Switch

SP000649954

 PG-SC59-3-4

Low-Power Automotive Hall Switch

 

TLE4916-1K

TLE4916-1K

 Datasheet

3

Rev.1.0,  2010-02-23

 

   

1

Product Description

1.1

Overview

The TLE4916-1K is an integrated Hall-Effect Sensor in a SMD package 
designed specifically to meet the requirements of low-power automotive 
and industrial applications with operating voltages of 2.4V - 5.0V. A 
chopped measurement principle provides high stability switching 
thresholds for operating temperatures between -40°C and 125°C.

1.2

Features

Micro power design

2.4V to 5.0V operation

High sensitivity and high stability of the magnetic switching points

High resistance to mechanical stress by Active Error Compensation

High ESD performance (± 4kV HBM)

Digital output signal

SMD package SC59 (SOT23 compatible)

RoHS compliant (Pb free package)

1.3

Target Applications

Target applications for TLE4916-1K are all automotive and industrial applications which require a low-power Hall 
switch to save power consumption. Due to its low average supply current of typical 4µA the sensor is ideally suited 
for battery powered systems or applications with a stand-by mode. 

 

For example, the Hall switch can be used to provide a wake-up signal for other systems which are in a sleep mode 
by detecting a change in the magnetic field, thus reducing overall current consumption.

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TLE4916-1K

Functional Description

 Datasheet

4

Rev.1.0,  2010-02-23

 

2

Functional Description

2.1

General

The Low Power Hall IC Switch is comprised of a Hall probe, bias generator, compensation circuits, oscillator, 
output latch and a n-channel open drain output transistor.
The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the 
temperature behavior and reduce influence of technology variations. 
The Active Error Compensation rejects offsets in signal stages and the influence of mechanical stress to the Hall 
probe caused by molding and soldering processes and other thermal stresses in the package. This chopper 
technique together with the threshold generator and the comparator ensure highly accurate magnetic switching 
points.
Very low power consumption is achieved with a timing scheme controlled by an oscillator and a sequencer. This 
circuitry activates the sensor for 50µs (typical operating time) sets the output state after sequential questioning of 
the switch points and latches it with the beginning of the following standby phase (max. 120ms). In the standby 
phase the average current is typically reduced to 3.5µA. Because of the long standby time compared to the 
operating time the overall averaged current is only slightly higher than the standby current. The output transistor 
can sink up to 1 mA with a maximal saturation voltage

 

V

QSAT

2.2

Pin Configuration (top view)

Figure 1

Pin Configuration and Center of Sensitive Area

2.3

Pin Description

Table 1

Pin Description 

Pin No.

Symbol

Function

Comment

1

V

S

Supply voltage

2

Q

Output

3

GND

Ground

Center of

Sensitive Area

1

± 0.15

1.5

± 0.15

0.8

2

3

SC59

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 Datasheet

5

Rev.1.0,  2010-02-23

 

  

TLE4916-1K

Functional Description

2.4

Block Diagram

Figure 2

Functional Block Diagram

2.5

Functional Block Description

The TLE4916-1K is an integrated Hall-Effect Sensor designed specifically to meet the requirements of low-power 
applications with operating voltages of 2.4V - 5.0V. 
Precise magnetic switching points and high temperature stability are achieved through the unique design of the 
internal circuit. 
An onboard clock scheme is used to reduce the average operating current of the IC. 
During the operating phase the IC compares the actual magnetic field detected to the internally compensated 
switching points. The output Q is switched at the end of each operating phase.
During the stand-by phase the output stage is latched and the current consumption of the device reduced to 4µA 
µA (typ. value). 
The IC switching behaviour is designed as a latch, i.e. it can be switched on (Q = LO) with the south pole of a 
magnet and switched off (Q = HI) with the north pole. 
.

Bias and Compensation 

Circuits

Oscillator

and

Sequencer

Oscillator

and

Sequencer

Chopped

Hall Probe

V

S

V

S

Q

GND

Amplifier

Comparator

with

Hysteresis

Active Error

Compensation

Active Error

Compensation

Active Error

Compensation

Active Error

Compensation

Threshold
Generator

Threshold
Generator

Logic

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TLE4916-1K

Functional Description

 Datasheet

6

Rev.1.0,  2010-02-23

 

Figure 3

Timing  Diagram

Figure 4

Output Signal

I

S

t

I

SAVG

I

SSTB

Operating

Time

Standby Time

Latch

Output

t

o p

50 

μ

s

t

stb

70ms

I

SOPAVG

V

Q

B

op

B

rp

0

B

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 Datasheet

7

Rev.1.0,  2010-02-23

 

  

TLE4916-1K

Specification

3

Specification

3.1

Application Circuit

For operating the sensor a pull-up resistor is required. A ceramic bypass capacitor at Vs to GND is recommended.
Note: The size of the pull-up resistor increases the overall current consumption as additional current is flowing 
through this resistor.

Figure 5

Application Circuit

T

L

E

4

91

6-

1K

GND

Q

Vs

R

Q

= 5k

Ω

C

S

= 100nF

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TLE4916-1K

Specification

 Datasheet

8

Rev.1.0,  2010-02-23

 

3.2

Absolute Maximum Ratings

Attention: Stresses above the max. values listed here may cause permanent damage to the device. 

Exposure to absolute maximum rating conditions for extended periods may affect device 
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may 
cause irreversible damage to the integrated circuit.

3.3

Operating Range

The following operating conditions must not be exceeded in order to ensure correct operation of the TLE4916-1K.
All parameters specified in the following sections refer to these operating conditions unless otherwise mentioned.

Table 2

Absolute Maximum Rating Parameters 

Parameter

Symbol

Limit Values

Unit

Note / Test Condition

Min.

Max.

Supply voltage

V

S

-0.3

5.5

V

Supply current

I

S

-1

2.5

mA

Output voltage

V

Q

-0.3

5.5

V

Output current

I

Q

-1

2

mA

Junction temperature

T

j

 

125
150

 

195

°C

for 5000h (not additive)
for 2000h (not additive)

 

for 3 x 1h (additive)

Magnetic flux density

B

unlimited mT

Thermal resistance SC59

100

K/W

Table 3

ESD Protection

1)

1) Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method 

3015.7

Parameter

Symbol

Limit Values

Unit

Note / Test Condition

Min.

Max.

ESD Voltage

V

ESD

±4

kV

HBM, R = 1.5k

Ω, 

C  = 100pF

 

T

A

 = 25°C

Table 4

Operating Condition Parameters 

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Supply voltage

V

S

2.4

2.7

5.0

V

Output voltage

V

Q

-0.3

2.7

5.0

V

Junction temperature

T

j

-40

125

°C

Maker
Infineon Technologies
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