TLE4906-3_Structured_book.book

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Sensors

Datasheet

 
Rev 1.0, 2010-12
 

TLE4906-3K

High Precision Hall-Effect Switch

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Edition 2010-12
Published by

 

Infineon Technologies AG

 

81726 Munich, Germany

© 

2010

 

Infineon Technologies AG

 

All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or 

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any 

information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties 

and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights 

of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest 

Infineon Technologies Office (

www.infineon.com

).

Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in 

question, please contact the nearest Infineon Technologies Office.
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 Datasheet

1

Rev 1.0, 2010-12

 

 

TLE4906-3K

TLE4906-3K High Precision Hall Effect Switch
 
Revision History: 2010-12, Rev 1.0
Previous Version: 
Page

Subjects (major changes since last revision)

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TLE4906-3K

Table of Contents

 Datasheet

2

Rev 1.0, 2010-12

 

1

Product Description  3

1.1

Overview  3

1.2

Features  3

1.3

Target Applications  3

2

Functional Description  4

2.1

General  4

2.2

Pin Configuration (top view)  4

2.3

Pin Description  4

2.4

Block Diagram  5

2.5

Functional Block Description  5

2.6

Application circuit  7

3

Specification  8

3.1

Absolute Maximum Ratings  8

3.2

Operating Range  9

3.3

Electrical and Magnetic Characteristics  10

4

Package Information  12

4.1

Package Outline  12

4.2

Distance between Chip and Package  13

4.3

Package Marking  13

Table of Contents

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Product Name

Product Type

Ordering Code

Package

TLE4906-3K

Unipolar Hall Switch

SP000868844

SC59

High Precision Hall-Effect Switch

 

 

TLE4906-3K

 Datasheet

3

Rev 1.0, 2010-12

 

1

Product Description

1.1

Overview

The TLE4906-3K is a high precision Hall effect switch 
with highly accurate switching thresholds for operating 
temperatures up to 150°C. 

1.2

Features

2.7V to 24V supply voltage

Operation from unregulated power supply

High sensitivity and high stability of the magnetic switching points

High resistance to mechanical stress by Active Error Compensation

Reverse battery protection (-18V)

Superior temperature stability

Low jitter (typ. 1µs)

High ESD performance (± 4kV HBM)

Digital output signal

SMD package 

SC59

 (SOT23 compatible)

1.3

Target Applications

Target applications for TLE4906-3K are all automotive applications which require a high precision Hall switch for 
position sensing with a operating temperature range from -40°C to +150°C. The TLE4906-3K is a unipolar Hall 
switch which is actuated with the south pole of a magnet. A magnetic field above the threshold B

OP

 switches the 

output to low (output transistor ON) and a magnetic field below the release point B

RP

 back to high (transistor OFF).

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 Datasheet

4

Rev 1.0, 2010-12

 

 

TLE4906-3K

Functional Description

2

Functional Description

2.1

General

The TLE4906-3K is an integrated circuit Hall-effect sensor designed specifically for highly accurate applications.
Precise magnetic switching points and high temperature stability are achieved by active compensation circuits and 
chopper techniques on chip.

2.2

Pin Configuration (top view)

Figure 1

Pin Configuration and Center of Sensitive Area

2.3

Pin Description

Table 1

Pin Description SC59 

Pin No.

Symbol

Function

Comment

1

V

DD

Supply voltage

2

Q

Output

3

GND

Ground

Center of

Sensitive Area

1

± 0.15

1.5

± 0.15

0.8

2

3

SC59

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 Datasheet

5

Rev 1.0, 2010-12

 

 

TLE4906-3K

Functional Description

2.4

Block Diagram

Figure 2

Functional Block Diagram

2.5

Functional Block Description

The chopped Hall IC Switch comprises a Hall probe, bias generator, compensation circuits, oscillator and output 
transistor.
The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the 
temperature behavior and reduce technology variations.
The Active Error Compensation rejects offsets in signal stages and the influence of mechanical stress to the Hall 
probe caused by molding and soldering processes and other thermal stresses in the package.
This chopper technique together with the threshold generator and the comparator ensure high accurate magnetic 
switching points.

Ref

Chopped

Hall Probe

V

DD

Q

GND

Amplifier

Low 

Pass 

Filter

Comparator 

with 

Hysteresis

Voltage Regulator

reverse polarity protected

Oscillator

and 

Sequencer

Bias and

Compensation

Circuits

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 Datasheet

6

Rev 1.0, 2010-12

 

 

TLE4906-3K

Functional Description

Figure 3

Timing  Diagram

Figure 4

Output Signal

Applied

Magnetic

Field

90%

10%

V

Q

t

f

t

d

t

r

t

d

B

OP

B

RP

V

Q

B

op

B

rp

0

B

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 Datasheet

7

Rev 1.0, 2010-12

 

 

TLE4906-3K

Functional Description

2.6

Application circuit

It is recommended to use a series resistor R

S

 with 200

Ω and a capacitor of C

DD

 = 4.7nF for protection against 

overvoltage and transients on the supply line. A capacitor C

Q

 at the Q pin protects the IC from disturbances 

coupled to the output. A pull-up resistor R

Q

 is also required for the output pin Q.

Figure 5

Application circuit

T

L

E

4906-

3K

GND

Vs

R

Q

= 1.2k

Ω

C

DD

= 4.7nF

R

s

= 200

Ω

V

DD

Q

C

Q

= 4.7nF

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 Datasheet

8

Rev 1.0, 2010-12

 

 

TLE4906-3K

Specification

3

Specification

3.1

Absolute Maximum Ratings

Note: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to 

absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are 
absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.

Table 2

Absolute Maximum Rating Parameters

 

T

j

 = -40°C to 150°C 

Parameter

Symbol

Limit Values

Unit

Note / Test Condition

Min.

Max.

Supply voltage

V

DD

 

V

S

V

S

-18
-18
-18

18
24
26

V

for 1h, R

S

 

 200

Ω

for 5min, R

S

 

 200

Ω

Supply current through 
protection device

I

DD

-50

50

mA

Output voltage

V

Q

-0.7
-0.7

18
26

V

for 5min @ 1.2k

Ω pull up

Continuous output current

I

Q

-50

50

mA

Junction temperature

T

j

 

 

 

155

 

165

 

175

 

195

°C

for 2000h (not additive)

 

for 1000h (not additive)

 

for 168h (not additive)

 

for 3 x 1h (additive)

Storage temperature

T

S

-40

150

°C

Magnetic flux density

B

unlimited mT

Table 3

ESD Protection

1)

1) Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method 

3015.7

Parameter

Symbol

Limit Values

Unit

Note / Test Condition

Min.

Max.

ESD Voltage

V

ESD

±4

kV

HBM, R = 1.5k

Ω, 

C  = 100pF

 

T

A

 = 25°C

Maker
Infineon Technologies
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