Microsoft Word - IRS2552D_FinalDS_7July09_SE.doc

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www.irf.com 

© 2009 International Rectifier 

23 

 

July 7, 2009

IRS2552D

CCFL/EEFL BALLAST CONTROLLER IC

 

 

 
Features 

•  Drives up to two IGBT/MOSFET power devices 

•  Integrated programmable oscillator 
•  Soft start function 
•  15.6 V voltage clamp on V

CC

 

•  Micro-power startup 

•  0 V to 5 V input analog dimming 

•  Programmable ignition frequency 

•  Programmable ignition time 

•  Lamp current control 

• Programmable 

deadtime 

•  Supports multi-lamp operation 

•  Burst dimming with soft start at every burst 

•  Latched open circuit protection 

•  Integrated bootstrap functionality 

•  Excellent latch immunity on all inputs & outputs 

•  Integrated ESD protection on all pins 

 

Typical Application 

• CCFL/EEFL 

inverter 

 

 
Product Summary 

Topology Half-Bridge 

V

OFFSET 

600 V 

V

OUT 

V

CC 

I

O+

 & I

O- 

(typical) 

300 mA & 450 mA 

Deadtime 
(programmable) 

500ns ~ 2µs 

 

Package Options 

 

               

16-Lead PDIP

 

16-Lead SOIC (Narrow Body) 

 

Typical Application Diagram

 

 
 
 

 

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IRS2552D

 

www.irf.com 

© 2009 International Rectifier 

 

 

Table of Contents 

Page 

Typical Application Diagram 

Qualification Information 

Absolute Maximum Ratings 

Recommended Operating Conditions 

Electrical Characteristics 

Functional Block Diagram 

10 

Lead Definitions 

12 

Lead Assignments 

13 

State Diagram 

14 

Application Information and Additional Details 

15 

Package Details 

29 

Part Marking Information  

30 

Ordering Information 

32 

 

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IRS2552D

 

www.irf.com 

© 2009 International Rectifier 

 

Description 

The IRS2552D incorporates a high voltage half-bridge gate driver with a front end that incorporates full control 
functionality for CCFL/EEFL ballasts. Includes a programmable ignition and supports dimming via analog or PWM 
control voltage.  HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The 
output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Noise 
immunity is achieved with low di/dt peak of the gate drivers, and with an undervoltage lockout hysteresis of 
approximately 1 V.  The IRS2552D also includes protection features for over-current and over-voltage of the lamps. 
 
 

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IRS2552D

 

www.irf.com 

© 2009 International Rectifier 

 

Qualification Information

 

Industrial

††

 

(per JEDEC JESD 47E)

 

Qualification Level 

Comments: This family of ICs has passed JEDEC’s 
Industrial qualification.  IR’s Consumer qualification level is 
granted by extension of the higher Industrial level. 

SOIC16 

MSL3

†††

 

(per IPC/JEDEC J-STD-020C)

 

Moisture Sensitivity Level 

PDIP16 

Not applicable 

(non-surface mount package style)

Machine Model 

Class C 

(per JEDEC standard EIA/JESD22-A115-A) 

ESD 

Human Body Model 

Class 3A 

(per EIA/JEDEC standard JESD22-A114-B) 

IC Latch-Up Test 

Class I, Level A 

(per JESD78A)

 

RoHS Compliant 

Yes 

 

† 

Qualification standards can be found at International Rectifier’s web site 

http://www.irf.com/

 

††  Higher qualification ratings may be available should the user have such requirements.  Please contact your 

International Rectifier sales representative for further information. 

†††  Higher MSL ratings may be available for the specific package types listed here.  Please contact your 

International Rectifier sales representative for further information. 

 

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IRS2552D

 

www.irf.com 

© 2009 International Rectifier 

 

Absolute Maximum Ratings

 

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.  All voltage 
parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.  The thermal 
resistance and power dissipation ratings are measured under board mounted and still air conditions. 

 

Symbol Definition 

Min. 

Max. 

Units

V

B

 

High-side floating supply voltage 

-0.3 

625 

V

S

 

High-side floating supply offset voltage 

V

B

  - 25 

V

B

 + 0.3 

V

H

 

High-side floating output voltage 

V

S

 – 0.3 

V

B

 + 0.3 

V

L

 

Low-side output voltage 

-0.3 

V

CC

 + 0.3 

V

CO

 

VCO pin voltage 

-0.3 

V

CC

 + 0.3 

V

CT

 

CT pin voltage 

-0.3 

V

CC

 + 0.3 

V

DT

 

DT pin voltage 

-0.3 

V

CC

 + 0.3 

MIN 

MIN pin voltage 

-0.3 

V

CC

 + 0.3 

DIM 

DIM pin voltage 

-0.3 

V

CC

 + 0.3 

CR 

CR pin voltage 

-0.3 

V

CC

 + 0.3 

CD 

CD pin voltage 

-0.3 

V

CC

 + 0.3 

SD 

SD pin voltage 

-0.3 

V

CC

 + 0.3 

CS 

CS pin voltage 

-0.3 

V

CC

 + 0.3 

I

CC

 

Supply current

 

--- 25 

mA 

dV

S

/dt 

Allowable offset voltage slew rate 

-50 

50 

V/ns 

16L-PDIP ---  1.3 

P

D

 

Package power dissipation @ T

A

 

≤ +25 

ºC 

16L-SOIC ---  1.4 

16L-PDIP ---  70 

R

ΘJA

 

Thermal resistance, junction to ambient 

16L-SOIC ---  82 

ºC/W 

T

J

 

Junction temperature 

-55 

150 

T

S

 

Storage temperature 

-55 

150 

T

L

 

Lead temperature (soldering, 10 seconds) 

--- 

300 

ºC 

 

†   This IC contains a voltage clamp structure between the chip V

CC

 and COM which has a nominal breakdown 

voltage of 15.6 V. Please note that this supply pin should not be driven by a DC, low impedance power source 
greater than the V

CLAMP

 specified in the Electrical Characteristics section. 

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IRS2552D

 

www.irf.com 

© 2009 International Rectifier 

 

Recommended Operating Conditions

 

For proper operation the device should be used within the recommended conditions. 

 

Symbol Definition 

Min. 

Max. 

Units 

V

BS

 

High-side floating supply voltage 

V

CC

 – 0.7 

V

CLAMP

 

V

S

 

Steady-state high-side floating supply offset voltage 

-3.0

 

600 

V

CC

 

Supply voltage 

V

CCUV+

 +0.1V 

V

CLAMP

 

V

 

I

CC

 

Supply current 

†† 

10 mA 

T

J

 

Junction temperature 

-40 

125 

ºC 

 

†   Care should be taken to avoid output switching conditions where the VS node flies inductively below ground 

by more than 5 V. 

††  Enough current should be supplied to the V

CC

 pin of the IC to keep the internal 15.6 V zener diode clamping 

the voltage at this pin. 

 

Recommended Component Values 

 

 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 

Symbol Component 

Min. 

Max. 

Units 

R

MIN

 

MIN pin resistor value 

R

MAX 

MAX pin resistor value 

R

DT 

DT pin resistor value 

22 

--- 

k

Ω 

C

T

 

CT pin capacitor value 

330 

C

DT 

DT pin capacitor value 

47 

--- pF

 

C

CR pin capacitor value 

C

CD pin capacitor value 

--- nF 

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IRS2552D

 

www.irf.com 

© 2009 International Rectifier 

 

Electrical Characteristics

 

V

BIAS

 (V

CC

, V

BS

) = 14 V, C

T

 = 1 nF and T

A

 = 25 °C unless otherwise specified. The input parameters are referenced to 

COM. The V

O

 and I

O

 parameters are referenced to COM and are applicable to the respective output leads: HO or 

LO. 

 

Symbol Definition Min 

Typ 

Max 

Units 

Test 

Conditions 

Low Voltage Supply Characteristics 

V

CCUV+

 Rising 

V

CC

 undervoltage lockout threshold 

9.5 10.5 11.5 

V

CCUV-

 Falling 

V

CC

 undervoltage lockout threshold 

8.5 9.5 10.5 

V

CCUVHYS

 

V

CC

 undervoltage lockout hysteresis 

0.5 1 1.5 

V N/A 

I

QCCUV

 

Micropower startup V

CC

 supply current 

--- 300 350 µA 

V

CC

  = V

CCUV+

  

-100 mV rising 

I

QCC

 

Quiescent V

CC

 supply current 

--- 4.0 4.5 

R

MIN

 = 12 kΩ, RUN 

MODE CT = 0 V 

I

QCCFLT

 

V

CC

 supply current 

--- 0.9 1.3 

Fault 

mode 

I

CC,FMIN

 

V

CC

 current @ f

osc

 = fMIN 

--- 4.7 5.3 

mA 

R

MIN

 = 12 k

Ω, RUN 

MODE 

V

CLAMP

 

V

CC

 clamp voltage 

14.6 15.6 16.6  V 

I

CC

 = 19 mA 

Floating Supply Characteristics 

I

QBSUV

 

Micropower startup V

BS

 supply current 

--- 6 20 

V

CC

 

≤ V

CCUV-

V

CC

 = V

BS

 

I

BS

 

V

BS

 supply current 

--- 1000 

1200 

µA 

HO oscillating 

V

BSUV+

 

V

BS

 supply undervoltage positive going 

threshold 

6.5 7.5 8.5 

V

BSUV-

 

V

BS

 supply undervoltage negative going 

threshold 

6.0 7.0 8.0 

V N/A 

I

LK

 

Offset supply leakage current 

--- --- 50 

μA 

V

B

 = V

S

 = 600 V 

Oscillator I/O Characteristics 

f

MIN

 

Minimum oscillator frequency 

36.5 

39 

42.5 

R

MIN

 = 12 k

Ω, RUN 

MODE 

f

MAX 

Maximum oscillator frequency 

67 

69 

71 

kHz 

R

MAX

 = 6.8 k

Ω, 

IGNITION MODE 

V

CT+

 

Upper CT ramp voltage threshold 

4.8 

5.0 

5.2 

V

CT-

 

Lower CT ramp voltage threshold 

--- 

--- 

V N/A 

I

CT

 

CT pin source current 

350 

410 

470 

μA 

R

MIN 

=12 k

Ω, RUN 

MODE 

V

MIN

 

VMIN pin voltage 

4.8 

5.0 

5.2 

V

MAX

 

VMAX pin voltage 

4.8 

5.0 

5.2 

V

MIN,FLT

 

VMIN voltage in fault mode 

--- 

--- 

V

MAX,FLT

 

VMAX voltage in fault mode 

--- 

--- 

V N/A 

 

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IRS2552D

 

www.irf.com 

© 2009 International Rectifier 

 

Electrical Characteristics 

V

BIAS

 (V

CC

, V

BS

) = 14 V, C

T

 = 1 nF and T

A

 = 25 °C unless otherwise specified. The input parameters are referenced to 

COM. The V

O

 and I

O

 parameters are referenced to COM and are applicable to the respective output leads: HO or 

LO. 

 

Symbol Definition Min 

Typ 

Max 

Units 

Test 

Conditions 

Ignition

 

I

CR,IGN 

Source current at CR pin in IGN mode 

3.7 

4.5 

5.3 

μA 

R

MIN 

= 12 k

Ω, 

IGNITION MODE 

V

CS,IGN 

Ignition detection threshold 

0.57 

0.6 

0.63 

N/A 

Gate Driver Output Characteristics 

V

OH

 

High-level output voltage, V

BIAS

 – V

O

 

--- V

CC

 ---  V 

V

OL

 

Low-level output voltage, VO 

--- COM  --- 

I

O

 = 0 A 

V

OL,UV

 

UV-mode output voltage, VO 

--- COM  --- 

mV 

I

O

 = 0 A, 

V

CC

 

≤ V

CCUV-

 

t

R

 

Output rise time 

--- 

80 

150 

t

F

 

Output fall time 

--- 

45 

100 

ns N/A 

t

D

 

Output deadtime (HO or LO) 

1.0 

1.1 

1.2 

μs 

R

DT  

= 2.2 k

Ω,  

C

DT  

= 1 nF 

I

O+

 

Output source current 

--- 

300 

--- 

I

O-

 

Output sink current 

--- 

450 

--- 

mA N/A 

Bootstrap FET Characteristics 

V

B,ON

 

V

B

 when the bootstrap FET is on 

13.2 

13.5 

--- 

N/A 

I

B,CAP

 

V

B

  source current when FET is on 

40 

55 

--- 

mA 

C

BS 

= 0.1 μF 

I

B,10V

 

V

B

  source current when FET is on 

12 

--- 

mA 

V

= 10 V 

Shutdown

 

V

SD

,

TH

 

Shutdown threshold at SD pin 

1.9 

2.0 

2.1 

N/A 

I

CD,source

 

CD pin source current 

3.7 

4.5 

5.3 

μA 

V

SD

>V

SD,TH

R

MIN 

= 12 k

Ω 

V

CD,TH

 

Threshold at which CD triggers shutdown 

4.8 

5.0 

5.2 

V

CC 

= 14 V 

 

 
 

 
 
 
 
 

 

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IRS2552D

 

www.irf.com 

© 2009 International Rectifier 

 

Electrical Characteristics

 

V

BIAS

 (V

CC

, V

BS

) = 14 V, C

T

 = 1 nF and T

A

 = 25 °C unless otherwise specified. The input parameters are 

referenced to COM. The V

O

 and I

O

 parameters are referenced to COM and are applicable to the respective 

output leads: HO or LO. 

Symbol Definition Min 

Typ 

Max 

Units 

Test 

Conditions 

Over-Current Compensation 

V

CS,TH

 

Current compensation threshold at CS pin 

1.15 

1.21 

1.27 

N/A 

I

CD,OC 

Source current at CD pin when the IC is in 
current compensation mode 

3.7 4.5  5.3 

μA 

V

CS

>V

CS,TH

R

MIN 

= 12 k

Ω 

V

CD,oc 

Voltage on CD where duty cycle reaches 
minimum 

4.8 5.0  5.2  V 

N/A 

DC

MIN 

Minimum HO duty cycle 

--- 

10% 

--- 

--- 

V

CD 

= 4.7 V, 

RUN MODE 

Dimming  

V

CR+

 

CR pin upper threshold voltage 

4.8 

5.0 

5.2 

V

CR-

 

CR pin lower threshold voltage 

--- 

0.2 

--- 

V N/A 

I

CR,RUN 

Source current at CR pin in RUN mode 

125 

150 

175 

μA R

MIN 

= 12 k

Ω 

f

CR

 

Frequency at CR pin 

240 

310 

370 

Hz 

C

= 100 nF,  

RUN MODE, 

R

MIN 

= 12 k

Ω 

Soft Start 

 

DC

MIN 

Minimum HO duty cycle 

--- 

10% 

--- 

--- 

V

CR

 = 0 V, 

V

DIM

 < V

DIM,SS 

V

CR,SS 

End of soft start voltage 

0.88 

0.96 

1.04 

V

DIM

 < V

DIM,SS 

V

DIM,SS 

Soft start disable threshold 

--- 

4.8 

--- 

N/A 

Enable

 

V

ENATH

 Enable 

threshold 

1.9  2.2  2.5  V 

V

ENAHYS

 Enable 

hysteresis 

---  200  ---  mV 

N/A 

 
 
 
 
 
 
 
 
 
 

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IRS2552D

 

www.irf.com 

© 2009 International Rectifier 

10 

 

Functional Block Diagram 

 

Q

S

R

Q

3

CT

8

ENA

11

SD

6

MAX

7

DIM

12

CS

5

MIN

0.6V

4

DT

10

CD

9

CR

Q

S

R2 Q

R1

IMIN

5V

5V

0V

ICD

2.2V

2V

1.21V

UV

5V

IMAX

UVLO

UV

0.2V

5V

ICR_IGN

ICR_RUN

BAND

GAP

REF

5V

VBG

IGNITION

LOGIC

SOFT

START

CONTROL

OVER

CURRENT
CONTROL

DEAD TIME

CONTROL

DUTY

CYCLE

CONTROL

OUTPUT

LOGIC

1

13

2

COM

LO

VCC

15.6V

15

16

14

VS

HO

VB

LEVEL

SHIFT

PULSE

FILTER &

LATCH

BOOT

STRAP

DRIVE

EN

5V

EN

 

 
 

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