Power Management & Multimarket
SiC
Silicon Carbide Diode
Final Datasheet
Rev. 2.2, 2013-01-15
5
t h
Generation thinQ!
T M
650V SiC Schottky Diode
IDW10G65C5
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions for a time periode of 10ms
Final Data Sheet
2
Rev. 2.2, 2013-01-15
1 Description
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1)
for target applications
Breakdown voltage tested at 22 mA
2)
Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced
EMI
Applications
Switch mode power supply
Power
factor
correction
Solar
inverter
Uninterruptible power supply
Table 1
Key Performance Parameters
Parameter Value
Unit
V
DC
650 V
Q
C
; V
R
=400V 15
nC
E
C
; V
R
=400V
3.5 µJ
I
F
@ T
C
< 130°C
10 A
Table 2
Pin Definition
Pin 1
Pin 2
Pin 3
n.c. C A
Type / ordering Code
Package
Marking
Related links
IDW10G65C5 PG-TO247-3 D1065C5
www.infineon.com/sic
IDW10G65C5
5
th
Generation thinQ!™ SiC Schottky Diode
ThinQ!™ Generation 5 represents Infineon leading edge technology for the
SiC Schottky Barrier diodes. Thanks to the more compact design and thin-
wafer technology, the new family of products shows improved efficiency over
all load conditions, resulting from both the improved thermal characteristics
and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
1
2
3
1
2
3
CASE
5
th
Generation thinQ!
TM
SiC Schottky Diode
IDW10G65C5
Table of contents
Final Data Sheet
3
Rev. 2.2, 2013-01-15
Table of Contents
1
Description .......................................................................................................................................... 2
2
Maximum ratings ................................................................................................................................ 4
3
Thermal characteristics ..................................................................................................................... 4
4
Electrical characteristics ................................................................................................................... 5
5
Electrical characteristics diagrams .................................................................................................. 6
6
Simplified Forward Characteristics Model ...................................................................................... 8
7
Package outlines ................................................................................................................................ 9
8
Revision History ............................................................................................................................... 10
5
th
Generation thinQ!
TM
SiC Schottky Diode
IDW10G65C5
Maximum ratings
Final Data Sheet
4
Rev. 2.2, 2013-01-15
2 Maximum
ratings
Table 3
Maximum ratings
Parameter Symbol
Values
Unit
Note/Test
Condition
Min. Typ. Max.
Continuous forward current
I
F
– – 10
A
T
C
< 130°C, D=1
Surge non-repetitive forward current,
sine halfwave
I
F,SM
–
–
58
T
C
= 25°C, t
p
=10 ms
– – 46
T
C
= 150°C, t
p
=10 ms
Non-repetitive peak forward current I
F,max
–
–
431
T
C
= 25°C, t
p
=10 µs
i²t value
∫ i²dt
– –
16.6 A²s
T
C
= 25°C, t
p
=10 ms
– –
10.5
T
C
= 150°C, t
p
=10 ms
Repetitive peak reverse voltage
V
RRM
–
–
650
V
Diode dv/dt ruggedness
dv/dt
– – 100
V/ns
V
R
=0..480 V
Power dissipation
P
tot
– – 65
W
T
C
= 25°C
Operating and storage temperature T
j
;T
stg
-55 – 175
°C
Mounting torque
– 50 70
Ncm
M3 and M4 screws
3 Thermal
characteristics
Table 4
Thermal characteristics TO-247-3
Parameter Symbol
Values
Unit
Note/Test
Condition
Min. Typ. Max.
Thermal resistance, junction-case
R
thJC
–
1.8 2.3
K/W
Thermal resistance, junction-
ambient
R
thJA
– – 62
leaded
Soldering temperature,
wavesoldering only allowed at leads
T
sold
– – 260
°C
1.6mm (0.063 in.) from
case for 10 s
5
th
Generation thinQ!
TM
SiC Schottky Diode
IDW10G65C5
Electrical characteristics
Final Data Sheet
5
Rev. 2.2, 2013-01-15
4 Electrical
characteristics
Table 5
Static characteristics
Parameter Symbol
Values
Unit
Note/Test
Condition
Min. Typ. Max.
DC blocking voltage
V
DC
650 – –
V
I
R
= 0.18 mA, T
j
= 25°C
Diode forward voltage
V
F
– 1.5 1.7
I
F
= 10 A, T
j
=25°C
–
1.8 2.1
I
F
= 10 A, T
j
=150°C
Reverse current
I
R
– 0.5 180
µA
V
R
=650 V, T
j
=25°C
– 0.1 60
V
R
=600 V, T
j
=25°C
– 2.0
1250
V
R
=650 V, T
j
=150°C
Table 6
AC characteristics
Parameter Symbol
Values
Unit
Note/Test
Condition
Min. Typ. Max.
Total capacitive charge
Q
c
–
15
nC
V
R
=400 V, di/dt=200A/µs,
I
F
≤I
F,MAX
, T
j
=150°C.
Total Capacitance
C
– 300 –
pF
V
R
=1 V, f=1 MHz
– 40 –
V
R
=300 V, f=1 MHz
– 39 –
V
R
=600 V, f=1 MHz
5
th
Generation thinQ!
TM
SiC Schottky Diode
IDH02G65C5
Electrical characteristics diagrams
Final Data Sheet
6
Rev. 2.2, 2013-01-15
5 Electrical
characteristics
diagrams
Table 7
Power dissipation
Diode forward current
0
10
20
30
40
50
60
70
25
50
75
100
125
150
175
P
to
t
[W
]
T
C
[
°C]
0
10
20
30
40
50
60
70
80
25
50
75
100
125
150
175
I
F
[A
]
T
C
[
°C]
0.1
0.3
0.5
0.7
1
P
tot
=f(T
C
); R
thJC,max
I
F
=f(T
C
); T
j
≤175°C; R
thJC,max
; parameter D=duty cycle
Table 8
Typical forward characteristics
Typical forward characteristics in surge current
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
I
F
[A]
V
F
[V]
0
10
20
30
40
50
60
70
80
90
100
0
1
2
3
4
5
6
I
F
[A]
V
F
[V]
I
F
=f(V
F
); t
p
=200 µs; parameter: T
j
I
F
=f(V
F
); t
p
=200 µs; parameter: T
j
-55°C
175°C
150°C
25°C
100°C
-55°C
25°C
100°C
150°C
175°C
5
th
Generation thinQ!
TM
SiC Schottky Diode
IDH02G65C5
Electrical characteristics diagrams
Final Data Sheet
7
Rev. 2.2, 2013-01-15
Table 9
Typ. capacitance charge vs. current slope
1)
Typ. reverse current vs. reverse voltage
0
2
4
6
8
10
12
14
16
100
400
700
1000
Qc
[
n
C
]
dI
F
/dt [A/µs]
1.E-9
1.E-8
1.E-7
1.E-6
1.E-5
100
200
300
400
500
600
I
R
[A
]
V
R
[V]
Q
C
=f(di
F
/dt); T
j
=150°C; V
R
=400 V; I
F
≤I
F,max
I
R
=f(V
R
); parameter: T
j
1) Only capacitive charge, guaranteed by design.
Table 10
Max. transient thermal impedance
Typ. capacitance vs. reverse voltage
0.01
0.1
1
1.E-06
1.E-03
1.E+00
Z
th
,j
c
[K
/W
]
t
p
[s]
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0
50
100
150
200
250
300
350
400
0 1 10
100
1000
C
[pF]
V
R
[V]
Z
th,jc
=f(t
P
); parameter: D=t
P
/T
C=f(V
R
); T
j
=25°C; f=1 MHz
-55°C
175°C
150°C
25°C
100°C
5
th
Generation thinQ!
TM
SiC Schottky Diode
IDH02G65C5
Electrical characteristics diagrams
Final Data Sheet
8
Rev. 2.2, 2013-01-15
Table 11
Typ. capacitance stored energy
0
1
2
3
4
5
6
7
8
9
10
0
200
400
600
E
C
[µ
J
]
V
R
[V]
E
C
=f(V
R
)
6
Simplified Forward Characteristics Model
Table 12
Equivalent forward current curve
Mathematical Equation
I
F
[A
]
V
F
[V]
V
F
=f(I
F
)
T
j
in °C; -55°C < T
j
< 175°C; I
F
< 20 A
1/R
diff
V
th
F
DIFF
TH
F
I
R
V
V
0.047
10
.29
1
10
.29
1
V
04
.
1
001
.
0
4
-
2
6
-
j
j
j
DIFF
j
j
TH
T
T
T
R
T
T
V
5th Generation thinQ!
TM
SiC Schottky Diode
IDW10G65C5
Package outlines
Final Data Sheet
9
Rev. 2.2, 2013-01-15
7 Package
outlines
Figure 1
Outlines TO-247, dimensions in mm/inches
5
th
Generation thinQ!
TM
SiC Schottky Diode
IDW10G65C5
Revision History
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
erratum@infineon.com
Edition 2013-01-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (
www.infineon.com
).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
Final Data Sheet
10
Rev. 2.2, 2013-01-15
8 Revision
History
5
th
Generation thinQ!
TM
SiC Schottky Diode
Revision History: 2013-01-15, Rev. 2.2
Previous Revision:
Revision
Subjects (major changes since last version)
2.0
Release of the final datasheet.
2.1
Reverse current values, maximum diode forward voltage.
2.2
Reverse current values, tested avalanche current, simplified calculation model