Microsoft Word - 121210_IDH20G65C5_Final_Datasheet_v2_2.doc

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Power Management & Multimarket 

SiC 

Silicon Carbide Diode 

 

Final Datasheet 

Rev. 2.2, 2012-12-10 
 

5

t h

 Generation thinQ!

T M

 

 

650V SiC Schottky Diode 

IDH20G65C5 

 

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1)  J-STD20 and JESD22 
2)  All devices tested under avalanche conditions for a time periode of 10ms 

 

Final Data Sheet 

Rev. 2.2, 2012-12-10 

 

1 Description 

 
 
 
 
 
 

Features 

 

Revolutionary semiconductor material - Silicon Carbide 

 

Benchmark switching behavior 

 

No reverse recovery/ No forward recovery  

 

Temperature independent switching behavior 

 

High surge current capability 

 

Pb-free lead plating; RoHS compliant 

 

Qualified according to JEDEC

1)

 for target applications 

 

Breakdown voltage tested at 44 mA

2)

 

 

Optimized for high temperature operation 

Benefits  

 

System efficiency improvement over Si diodes 

 

System cost / size savings due to reduced cooling requirements 

 

Enabling higher frequency / increased power density solutions 

 

Higher system reliability due to lower operating temperatures 

 Reduced 

EMI 

Applications 

 

Switch mode power supply 

 Power 

factor 

correction 

 Solar 

inverter 

 

Uninterruptible power supply 

 
Table 1  

Key Performance Parameters 

Parameter Value 

Unit 

V

DC

 

650 V 

Q

C

V

R

=400V 

29 nC 

E

C

V

R

=400V 

6.6 µJ 

I

@ T

< 135°C 

20 A 

 
Table 2  

Pin Definition 

Pin 1 

Pin 2 

Pin 3 

C A n.a. 

 

Type / ordering Code 

Package 

Marking 

Related links 

IDH20G65C5 PG-TO220-2  D2065C5 

www.infineon.com/sic

 

IDH20G65C5

5

th

 Generation thinQ!™ SiC Schottky Diode

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC 
Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, 
already introduced with G3 is now combined with a new, more compact design and 
thin-wafer technology. The result is a new family of products showing improved 
efficiency over all load conditions, resulting from both the improved thermal 
characteristics and a lower figure of merit (Qc x Vf). 
The new thinQ!™ Generation 5 has been designed to complement our 650V 
CoolMOS™ families: this ensures meeting the most stringent application 
requirements in this voltage range. 

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5

th

 Generation thinQ!

TM

 SiC Schottky Diode 

 

IDH20G65C5 

 

 

Table of contents 

 

Final Data Sheet 

Rev. 2.2, 2012-12-10 

Table of Contents 

1

 

Description .......................................................................................................................................... 2

 

2

 

Maximum ratings ................................................................................................................................ 4

 

3

 

Thermal characteristics ..................................................................................................................... 4

 

4

 

Electrical characteristics ................................................................................................................... 5

 

5

 

Electrical characteristics diagrams .................................................................................................. 6

 

6

 

Simplified Forward Characteristics Model ...................................................................................... 8

 

7

 

Package outlines ................................................................................................................................ 9

 

8

 

Revision History ............................................................................................................................... 10

 

 

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5

th

 Generation thinQ!

TM

 SiC Schottky Diode 

 

IDH20G65C5 

 

 

Maximum ratings 

 

Final Data Sheet 

Rev. 2.2, 2012-12-10 

2 Maximum 

ratings 

Table 3  

Maximum ratings 

Parameter Symbol 

Values 

Unit 

Note/Test 

Condition 

Min. Typ. Max. 

Continuous forward current 

I

F

 

– – 20 

T

C

 < 135°C, D=1 

Surge non-repetitive forward current, 
sine halfwave 

I

F,SM

 – 

– 

142 

T

C

 = 25°C, t

p

=10 ms 

– – 119 

T

C

 = 150°C, t

p

=10 ms 

Non-repetitive peak forward current  I

F,max

 – 

– 

776 

T

C

 = 25°C, t

p

=10 µs 

i²t value 

∫ i²dt 

– – 100 

A²s 

T

C

 = 25°C, t

p

=10 ms 

– – 71 

T

C

 = 150°C, t

p

=10 ms 

Repetitive peak reverse voltage 

V

RRM

 – 

– 

650 

T

j

 = 25°C 

Diode dv/dt ruggedness 

dv/dt 

– – 100 

V/ns 

V

R

=0..480 V 

Power dissipation 

P

tot

 

– – 157 

T

C

 = 25°C 

Operating and storage temperature  T

j

;T

stg

 

-55 – 175 

°C  

Mounting torque 

 

– – 70 

Ncm M3 

screws 

 

3 Thermal 

characteristics 

Table 4  

Thermal characteristics TO-220-2 

Parameter Symbol 

Values 

Unit 

Note/Test 

Condition 

Min. Typ. Max. 

Thermal resistance, junction-case 

R

thJC

 

– 

0.6 1.0 

K/W 

 

Thermal resistance, junction-
ambient 

R

thJA

 

– – 62 

leaded 

Soldering temperature, 
wavesoldering only allowed at leads 

T

sold

 

– – 260 

°C 

1.6mm (0.063 in.) from 
case for 10 s 

 

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5th Generation thinQ!

TM

 SiC Schottky Diode 

 

IDH20G65C5 

 

 

Electrical characteristics  

 

Final Data Sheet 

Rev. 2.2, 2012-12-10 

4 Electrical 

characteristics 

Table 5  

Static characteristics 

Parameter Symbol 

Values 

Unit 

Note/Test 

Condition 

Min. Typ. Max. 

DC blocking voltage 

V

DC

 

650 –  – 

I

R

= 0.21 mA, T

j

=25°C 

Diode forward voltage 

V

F

 

– 1.5 1.7 

I

F

= 20 A, T

j

=25°C 

 

1.8 2.1 

I

F

= 20 A, T

j

=150°C 

Reverse current 

I

R

 

– 1.1 210 

µA 

V

R

=650 V, T

j

=25°C 

– 0.26 74 

V

R

=600 V, T

j

=25°C 

– 4.1 

1450 

V

R

=650 V, T

j

=150°C 

 
Table 6  

AC characteristics 

Parameter Symbol 

Values 

Unit 

Note/Test 

Condition 

Min. Typ. Max. 

Total capacitive charge 

Q

c

 

– 

29  

nC 

V

R

=400 V, di/dt=200A/µs, 

I

F

I

F,MAX

T

j

=150°C 

Total Capacitance 

C 

– 590 – 

pF 

V

R

=1 V, f=1 MHz 

– 76 – 

V

R

=300 V, f=1 MHz 

– 74 – 

V

R

=600 V, f=1 MHz 

 

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background image

 

5

th

 Generation thinQ!

TM

 SiC Schottky Diode 

 

IDH20G65C5 

 

 

Electrical characteristics diagrams  

 

Final Data Sheet 

Rev. 2.2, 2012-12-10 

5 Electrical 

characteristics 

diagrams 

Table 7

 

Power dissipation 

Diode forward current 

0

20

40

60

80

100

120

140

160

180

25

50

75

100

125

150

175

P

to

t

[W

]

T

C

[

°C]

 

0

20

40

60

80

100

120

140

160

180

25

50

75

100

125

150

175

I

F

[A

]

T

C

[

°C]

0.1

0.3

0.5

0.7

1

 

P

tot

=f(T

C

); R

thJC,max

 

I

F

=f(T

C

); T

j

≤175°C; R

thJC,max

; parameter D=duty cycle 

 

Table 8

 

Typical forward characteristics 

Typical forward characteristics in surge current 

0

5

10

15

20

25

30

35

40

0

0.5

1

1.5

2

2.5

3

I

F

[A

]

V

F

[V]

-55°C

25°C

100°C

150°C

175°C

 

0

20

40

60

80

100

120

140

160

180

200

0

1

2

3

4

5

6

I

F

[A]

V

F

[V]

-55°C

25°C

100°C

150°C

175°C

 

I

F

=f(V

F

); t

p

=200 µs; parameter: T

j

 

I

F

=f(V

F

); t

p

=200 µs; parameter: T

j

 

 

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background image

 

5

th

 Generation thinQ!

TM

 SiC Schottky Diode 

 

IDH20G65C5 

 

 

Electrical characteristics diagrams  

 

Final Data Sheet 

Rev. 2.2, 2012-12-10 

Table 9

 

Typ. capacitance charge vs. current slope

1)

 

Typ. reverse current vs. reverse voltage 

0

5

10

15

20

25

30

100

300

500

700

900

Q

C

[n

C

]

dI

F

/dt [A/µs]

 

1.E-9

1.E-8

1.E-7

1.E-6

1.E-5

1.E-4

100

200

300

400

500

600

I

R

[A

]

V

R

[V]

 

Q

C

=f(di

F

/dt); T

j

=150°C; V

R

=400 V; I

F

I

F,max

 

I

R

=f(V

R

); parameter: T

j

 

1) Only capacitive charge, guaranteed by design. 

 

Table 10

 

Max. transient thermal impedance 

Typ. capacitance vs. reverse voltage 

0.01

0.1

1

1.E-06

1.E-03

1.E+00

Z

th

,j

c

[K

/W

]

t

p

[s]

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

 

0

100

200

300

400

500

600

700

800

0 1 10 

100 

1000 

C

[pF]

V

R

[V]

 

Z

th,jc

=f(t

P

); parameter: D=t

P

/T 

C=f(V

R

); T

j

=25°C; f=1 MHz 

 

-55°C

175°C

150°C

25°C 

100°C 

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background image

 

5

th

 Generation thinQ!

TM

 SiC Schottky Diode 

 

IDH20G65C5 

 

 

Electrical characteristics diagrams  

 

Final Data Sheet 

Rev. 2.2, 2012-12-10 

Table 11

 

Typ. capacitance stored energy 

0

2

4

6

8

10

12

14

16

18

0

200

400

600

E

C

J

]

V

R

[V]

 

E

C

=f(V

R

 

Simplified Forward Characteristics Model  

Table 12

 

Equivalent forward current curve 

Mathematical Equation 

I

F

[A

]

V

F

[V]

 

 

V

F

=f(I

F

T

j

 in °C; -55°C < T

j

 < 175°C; I

F

 < 40 A 

 

 

1/R

diff

 

V

th

 

 

 

 

 

  

0.023

10

6.4

10

6.4

V

  

04

.

1

001

.

0

5

-

2

7

-

j

j

j

DIFF

j

j

TH

T

T

T

R

T

T

V

F

DIFF

TH

F

I

R

V

V

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background image

 

5

th

 Generation thinQ!

TM

 SiC Schottky Diode 

 

IDH20G65C5 

 

 

Package outlines  

 

Final Data Sheet 

Rev. 2.2, 2012-12-10 

7 Package 

outlines 

 

 

Figure 1 

Outlines TO-220, dimensions in mm/inches 

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background image

 

5

th

 Generation thinQ!

TM

 SiC Schottky Diode 

 

IDH20G65C5 

 

 

Revision History 

We Listen to Your Comments 
Any information within this document that you feel is wrong, unclear or missing at all? 
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to: 

erratum@infineon.com 

Edition 2012-12-10 
Published by 
Infineon Technologies AG 
81726 Munich, Germany 
© 2012 Infineon Technologies AG 
All Rights Reserved. 
 
Legal Disclaimer 
The information given in this document shall in no event be regarded as a guarantee of conditions or 
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any 
information regarding the application of the device, Infineon Technologies hereby disclaims any and all 
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual 
property rights of any third party. 
Information 
For further information on technology, delivery terms and conditions and prices, please contact the nearest 
Infineon Technologies Office (

www.infineon.com

). 

 
Warnings 
Due to technical requirements, components may contain dangerous substances. For information on the types in 
question, please contact the nearest Infineon Technologies Office. 
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or 
systems and/or automotive, aviation and aerospace applications or systems only with the express written 
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the 
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or 
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the 
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to 
assume that the health of the user or other persons may be endangered. 
 
 
 

Final Data Sheet 

10 

Rev. 2.2, 2012-12-10 

8 Revision 

History 

 

 

 

5

th

 Generation thinQ!

TM

 SiC Schottky Diode 

 
Revision History: 2012-12-10, Rev. 2.2 

Previous Revision: 

Revision 

Subjects (major changes since last version) 

2.0 

Release of the final datasheet. 

2.1 

Reverse current values, maximum diode forward voltage. 

2.2 

Reverse current values, tested avalanche current, simplified calculation model 

Maker
Infineon Technologies
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