IRS21953SPbF Product Datasheet

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IRS21953SPBF 

 

Features 

• 

2 low side output channels sharing common ground 

• 

1 high side output channel 

• 

CMOS Schmitt trigger inputs with pull down resistor 

• 

Under voltage lockout on all channels 

• 

5 V compatible logic level Inputs 

• 

Immune to –Vs spike and tolerant to dVs/dt & dVss/dt 

• 

Shoot through prevention logic 

 
Descriptions 

 
 
 
 
 
 
 
 
 
 
 

HIGH SIDE & DUAL LOW SIDE 

DRIVER IC

 

Product Summary 

V

OFFSET 

(low side)                                  -600 V (VSS)   

V

OFFSET 

(high side)                                 600 V (COM)      

V

OUT

                                                         10 V to 20 V 

t

on

/t

off 

(typ)                                            380 ns/380 ns 

I

o+/-

                                                           0.5 A/0.5 A 

 
                                             

Package

        

 

 

                     

     

                         16-Lead SOIC (narrow body

)      

Typical Connection Diagram

 

 

 

 

 

 

The IRS21953 contains 2 low side outputs sharing 
common ground and 1 high side output. Low side drivers 
can tolerate up to -600 V below input signal (VSS: input 
supply return). High side driver can tolerate up to 600 V 
above low side ground (COM: low side supply return).     
The IRS21953 has better propagation delay and thermal 
characteristics compared to a photo-coupler driver. The 
logic inputs are compatible with standard CMOS or LSTTL 
output. Proprietary HVIC and latch-up immune CMOS 
technologies enable ruggedized monolithic construction.      

Not recommended for new designs. No replacement is available

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IRS21953SPBF 

 

 

2

 

 

Absolute Maximum Ratings 

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.  All voltage 
parameters are absolute voltages referenced to COM. 

Symbol Definition 

Min 

Max 

Units 

HIN 

LIN1 
LIN2 

Floating logic level Input voltage 

VSS-0.3 

VDD+0.3 

VDD 

Floating logic input supply voltage 

-0.3 

625

 

VSS 

Floating logic input supply return voltage 

VDD-25 

VDD+0.3 

VB

 

High side floating well supply voltage 

-0.3 

625 

VS 

High side floating well supply return voltage 

VB-25 

VB+0.3 

HO 

High side floating gate drive output voltage 

VS-0.3 

VB+0.3 

VCC 

Low side supply voltage 

-0.3 

25 

LO1 
LO2 

Low side output voltage 

-0.3 

VCC+0.3 

 
 
 
 
 

dVS/dt 

Allowable VS offset transient relative to earth ground 

50 

dVSS/dt 

Allowable VSS offset transient relative to earth ground 

50 

V/ns 

P

D

 

Package power dissipation @ T

A

<=+25 ºC 

- 1 

R

θJA

 

Thermal resistance, junction to ambient 

100 

ºC/W 

T

Junction temperature 

-55 

150 

T

Storage temperature 

-55 

150 

T

Lead temperature (soldering, 10 seconds) 

300 

ºC 

 

 

Recommended Operating Conditions 

For proper operation, the device should be used within the recommended conditions.  All voltage parameters are absolute 
voltages referenced to COM.   

Symbol 

Definition Min 

Max 

Units 

HIN 

LIN1 
LIN2 

Floating logic level input voltage 

VSS 

VDD 

VDD 

Floating logic input supply voltage 

VSS+10 

VSS+20 

VSS 

Floating logic input supply return voltage 

-5 

600 

VB

 

High side floating well supply voltage 

VS+10 

VS+20 

VS 

High side floating well supply return voltage 

-5 

600 

HO 

High side floating gate drive output voltage 

VS 

VB 

VCC 

Low side supply voltage 

10 

20 

LO1 
LO2 

Low side output voltage 

VCC 

T

Ambient temperature 

-40 

125 

ºC 

 

 

 

Note 1:  

Logic operation for V

S

 of –5 V to 600 V. Logic state held for V

S

 of –5 V to –V

BS

. (Please refer to Design Tip 

DT97-3 for more details). 

 

Not recommended for new designs. No replacement is available

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IRS21953SPBF 

 

 

3

 

Static Electrical Characteristics  

(VB-VS)=15 V. The V

IN

, V

IN,TH

, V

BSUV

, V

O

, I

O

 and I

IN

 parameters are referenced to V

S

.  T

A

 = 25 

o

C unless otherwise 

specified. 

 

Symbol Definition  Min 

Typ

Max 

Units 

Test 

Conditions 

V

CCUV+

  V

CC

 supply undervoltage positive going threshold 

7.5 8.6 9.7 

V

CCUV-

  V

CC

 supply undervoltage negative going threshold 

7.0 8.2 9.4 

V

BSUV+

  V

BS

  supply undervoltage positive going threshold 

7.5 8.6 9.7 

V

BSUV-

 

V

BS

  supply undervoltage negative going threshold 

7.0 8.2 9.4 

V

DDUV+

  V

DD

  supply undervoltage positive going threshold 

7.5 8.6 9.7 

V

DDUV-

  V

DD

  supply undervoltage negative going threshold

7.0 8.2 9.4 

V  

I

LKVCC 

I

LKVBS 

Offset supply leakage current – both input well 
and output well 

--- --- 50 

V

B

 = V

S

 = 600 V 

V

CC

 = V

COM

 = 600 V 

I

QBS

 

Quiescent V

BS

 supply current 

--- 

70 

140 

I

QDD

 

Quiescent V

DD

 supply current 

--- 

100 

200 

I

QCC

 

Quiescent V

CC

 supply current 

--- 

130 

260 

µA 

VIN = 0 V or 5 V 

V

IH

 

Logic “1” input voltage 

3.5 

--- 

--- 

V

IL

 

Logic “0” input voltage 

--- 

--- 

0.6 

 

V

OH

 

High level output voltage, V

BIAS

-V

O

  

--- 

--- 

0.1 

I

o

= 0 A 

V

OL

 

Low level output voltage, V

O

  

--- 

--- 

0.1 

V

 

I

o

= 0 A 

I

IN+

 

Logic “1” input bias current 

--- 

10 

VIN = 5 V 

I

IN-

 

Logic “0” input bias current 

--- 

--- 

µA 

VIN = 0 V  

I

o+

 

Output high short circuit pulsed current 

--- 

0.5 

--- 

V

O

=0 V,V

IN

=0 V, 

PW<=10 µs 

I

o-

 

Output low short circuit pulsed current 

--- 

0.5 

--- 

V

O

=15 V,V

IN

=5 V, 

PW<=10 µs 

 
 

Not recommended for new designs. No replacement is available

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IRS21953SPBF 

 

 

4

 

Dynamic Electrical Characteristics (All values are target data) 

(VB-VS)= 15 V. C

L

 = 1000 pF unless otherwise specified.  All parameters are reference to COM.  T

A

 = 25 

o

C unless 

otherwise specified. 

Symbol Definition  Min

Typ

Max

Units Test 

Conditions

t

on

 

Turn-on propagation delay of high 
and low side 

--- 380 --- 

V

SS

=200 V, V

S

=0 V 

t

off

 

Turn-off propagation delay of high 
and low side 

--- 

380 

   --- 

V

SS

=200 V, V

S

=400 V 

t

r

 

Turn-on rise time of high and low 
side 

--- 25 70 

V

SS

=200 V, V

S

=0 V 

t

f

 

Turn-off fall time of high and low 
side 

--- 25 70 

V

SS

=200 V, V

S

=400 V 

MT_on 

Turn on propagation delay 
matching 

--- --- 50 

V

SS

=200 V, V

S

=0 V 

MT_off 

Turn off propagation delay 
matching 

--- --- 50 

ns 

V

SS

=200 V, V

S

=400 V 

 
 

 
 

 

Not recommended for new designs. No replacement is available

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IRS21953SPBF 

 

 

5

Functional Block Diagram 
 

Level

Shift

Up

R         

R       Q

S

UVLO

Pulse

Filter

5V

Regulator

Level

Shift

Down

VDD

LIN2

LIN1

HIN

HO

VB

VS

VSS

R         

R       Q

S

UVLO

Pulse

Filter

VCC

LO2

COM

R

Q       R

S

UVLO

Pulse

Filter

LO1

Shoot

Through

Prevention

Logic

UVLO

 

 

   

Not recommended for new designs. No replacement is available

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IRS21953SPBF 

 

 

6

Lead Definitions  

 

Symbol Description 

VDD 

Input logic supply voltage  

HIN 

Logic input for high side gate driver 

LIN1, LIN2 

Logic inputs for low side gate driver 

VSS 

Input logic supply return 

LO1, LO2 

Low side outputs 

VCC 

Low side supply voltage 

COM 

Low side supply return 

HO 

High side output 

VB 

High side floating supply voltage 

VS 

High side floating supply return 

 
 
 

Lead Assignments  

 

 

 
 
 
 
 

Not recommended for new designs. No replacement is available

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IRS21953SPBF 

 

 

7

                   

 

 

 

       Figure 1:  Switching Time Waveforms 

 
 

 

 

 

Shoot Through Prevention Logic 

 

HIN1 LIN1 LIN2  HO1  LO1  LO2 

1 0 0 1 0 0 
0 1 0 0 1 0 
0 0 1 0 0 1 
1 1 0 0 0 0 
1 0 1 0 0 0 
0 1 1 0 1 1 
1 1 1 0 0 0 
0 0 0 0 0 0 

 

 
 
 
 
 

Not recommended for new designs. No replacement is available

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IRS21953SPBF 

 

 

8

 

0

100

200

300

400

500

600

700

800

-50

-25

0

25

50

75

100

125

Temperature (

o

C)

Tu

rn

-o

n D

ela

y T

im

e (n

s)

Figure 2A. Turn-On Tim e

 vs. Tem perature

Typ.

        

0

100

200

300

400

500

600

700

800

10

12

14

16

18

20

V

BIAS 

Supply  Voltage (V)

Tu

rn

-o

D

elay

 T

im

e (

ns

)

Figure 2B. Turn-On Tim e

 vs. Supply Voltage

Typ.

 

 
 

0

100

200

300

400

500

600

700

800

-50

-25

0

25

50

75

100

125

Temperature (

o

C)

Tu

rn

-O

ff T

im

e (

ns

)

Figure 3A. Turn-Off Tim e

 vs. Tem perature

Typ.

         

0

100

200

300

400

500

600

700

800

10

12

14

16

18

20

V

BIAS

 Supply  Voltage (V)

Tu

rn

-O

ff T

im

e (

ns

)

Figure 3B. Turn-Off Tim e

 vs. Supply Voltage

Typ.

 

 
 

 

0

20

40

60

80

-50

-25

0

25

50

75

100

125

Temperature (

o

C)

Tu

rn

-O

n R

is

e T

im

e (n

s)

Fiure 4A. Turn-On Rise Tim e

vs.Tem perature

Typ.

         

0

20

40

60

80

10

12

14

16

18

20

V

BIAS

 Supply  Voltage (V)

Tu

rn

-O

R

is

e T

im

e (

ns

)

Figure 4B. Turn-On Rise Tim e

vs. Supply Voltage

Typ.

 

 
 
 

Not recommended for new designs. No replacement is available

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IRS21953SPBF 

 

 

9

 

0

20

40

60

80

-50

-25

0

25

50

75

100

125

Temperature (

o

C)

Tu

rn

-O

ff Fa

ll Ti

me

 (n

s)

Figure 5A. Turn-Off Fall Tim e

 vs. Tem perature

Typ.

         

0

20

40

60

80

10

12

14

16

18

20

V

BIAS

 Supply  Voltage (V)

Tu

rn

-O

ff Fa

ll Ti

me

 (n

s)

Figure 5B. Turn-Off Fall Tim e

 vs. Supply Voltage

Typ.

 

 
 

1

2

3

4

5

6

-50

-25

0

25

50

75

100

125

Temperature (

o

C)

In

pu

t Volt

ag

e (V

)

Figure 6A. Logic "1" Input Voltage 

vs. Tem perature

Mi n.

           

1

2

3

4

5

6

10

12

14

16

18

20

Vcc Supply  Voltage (V)

Inpu

t Volt

ag

e (V

)

Figure 6B. Logic "1" Input Voltage 

vs. Supply Voltage

Min.

 

 
 

0

1

2

3

4

-50

-25

0

25

50

75

100

125

Temperature (

o

C)

In

pu

t Volt

ag

e (V

)

Figure 7A. Logic "0" Input Voltage

 vs. Tem perature

Max.

           

0

1

2

3

4

10

12

14

16

18

20

V

cc 

Supply  Voltage (V)

In

pu

t Volt

ag

e (V

)

Figure 7B. Logic "0" Input Voltage

 vs. Supply Voltage

Max

 

 
 

Not recommended for new designs. No replacement is available

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background image

 

IRS21953SPBF 

 

 

10

 

0.0

0.1

0.2

0.3

0.4

0.5

-50

-25

0

25

50

75

100

125

Temperature (

o

C)

H

igh

 L

ev

el O

ut

pu

t Volt

ag

e (V

)

Figure 8A. High Level Output

 vs. Tem perature

Max.

          

0

0.1

0.2

0.3

0.4

0.5

10

12

14

16

18

20

V

cc

 Supply  Voltage (V)

H

igh

 L

ev

el O

ut

pu

t Volt

ag

e (V

)

Figure 8B. High Level Output

 vs. Supply Voltage

Max.

 

 
 

0

0.1

0.2

0.3

0.4

0.5

-50

-25

0

25

50

75

100

125

Temperature (

o

C)

Lo

w

 Le

ve

l O

ut

pu

t Volt

ag

e (V)

Figure 9A. Low  Level Output

 vs.Tem perature

Max.

          

0

0.1

0.2

0.3

0.4

0.5

10

12

14

16

18

20

V

cc

 Supply  Voltage (V)

Lo

w

 Le

ve

l O

ut

pu

t Volt

ag

e (V)

Figure 9B. Low  Level Output

 vs. Supply Voltage

Max.

 

 
 

0

100

200

300

400

500

-50

-25

0

25

50

75

100

125

Temperature (

o

C)

O

ffs

et

 Su

pp

ly

 Le

ak

ag

e C

urr

en

t (u

A)

Max.

Figure 10A. Offset Supply Leakage Current 

vs. Tem perature

           

0

100

200

300

400

500

0

100

200

300

400

500

600

V

B

 Boost Voltage (V)

O

ffs

et

 Su

pp

ly

 Le

ak

ag

e C

urr

en

t (u

A)

Max.

Figure 10B. Offset Supply Leakage Current 

vs. Supply Voltage

 

 
 
 

Not recommended for new designs. No replacement is available

Maker
Infineon Technologies