IRLTS2242PbF Product Datasheet

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irlts2242pbf-html.html
background image

 

IRLTS2242PbF 

www.irf.com

        © 2014 International Rectifier  

 

Submit Datasheet Feedback

                   November 18, 2014 

HEXFET

® 

Power MOSFET 

V

DSS 

-20 

V

GS 

± 12 

R

DS(on) 

max 

(@ V

GS 

= -4.5V) 

32 

m



R

DS(on) 

max 

(@ V

GS 

= -2.5V) 

55 

m



Q

g (typical) 

12 

nC 

I

D  

(@T

= 25°C) 

-6.9 A 

 

 

TSOP-6 

Notes  through  are on page 2 

Base part number  

Standard Pack 

Orderable Part Number   

Form 

Quantity 

IRLTS2242TRPbF 

TSOP-6 

Tape and Reel 

3000 

IRLTS2242TRPbF 

Package Type  

Applications  
 Battery operated DC motor inverter MOSFET 

 System/Load Switch  

Absolute Maximum Ratings 

 

 

 

  

Parameter Max. 

Units 

V

DS 

Drain-to-Source Voltage 

 - 20 

V

GS 

Gate-to-Source Voltage 

 ± 12 

I

D

 @ T

A

 = 25°C 

Continuous Drain Current, V

GS

 @ 4.5V 

-6.9 

I

D

 @ T

A

 = 70°C 

Continuous Drain Current, V

GS

 @ 4.5V  

-5.5 

I

DM 

Pulsed Drain Current  -55 

P

D

 @T

A

 = 25°C 

Power Dissipation  

2.0 

P

D

 @T

A

 = 70°C 

Power Dissipation  

1.3 

  

Linear Derating Factor  

0.02 

W/°C 

T

J  

Operating Junction and 

-55  to + 150 

°C 

T

STG 

Storage Temperature Range 

  

Features 

 

Benefits 

Industry-Standard TSOP-6 Package 

results in  Multi-Vendor Compatibility 

RoHS Compliant Containing no Lead, no Bromide and no Halogen 



Environmentally Friendlier 

MSL1, Consumer Qualification 

 

Increased Reliability 

Top View

1

2

D

G

A

D

D

D

S

3

4

5

6

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irlts2242pbf-html.html
background image

 

 IRLTS2242PbF 

www.irf.com

        © 2014 International Rectifier  

 

Submit Datasheet Feedback

                   November 18, 2014 

Thermal Resistance  

 

 

 

  

Parameter Typ. 

Max. 

Units 

R

JA

  

Junction-to-Ambient  ––– 

62.5 

°C/W 

 

Static @ T

J

 = 25°C (unless otherwise specified)   

 

 

 

 

  

Parameter Min. 

Typ. 

Max. 

Units 

Conditions 

BV

DSS 

Drain-to-Source Breakdown Voltage 

-20 

––– 

––– 

V

GS

 = 0V, I

D

 = -250µA 

BV

DSS

/

T

J  

Breakdown Voltage Temp. Coefficient 

––– 

9.4 

–––  mV/°C  Reference to 25°C, I

D

 = -1mA  

R

DS(on) 

Static Drain-to-Source On-Resistance 

––– 

26 

32 

m

 

V

GS

 = -4.5V, I

D

 = -6.9A  

 

 

––– 45  55 

V

GS

 = -2.5V, I

D

 = -5.5A  

V

GS(th) 

Gate Threshold Voltage 

-0.4 

––– 

-1.1 

V

DS

 = V

GS

, I

D

 = -10µA   

V

GS(th) 

Gate Threshold Voltage Coefficient 

––– 

-3.8 

–––  mV/°C 

I

DSS 

Drain-to-Source Leakage Current 

––– 

––– 

-1.0 

V

DS

 = -16V, V

GS

 = 0V 

 

 

––– ––– -150 

V

DS

 = -16V, V

GS

 = 0V,T

J

= 125°C 

I

GSS 

Gate-to-Source Forward Leakage 

––– 

––– 

-100 

nA 

V

GS

 = -12V 

  

Gate-to-Source Reverse Leakage 

––– 

––– 

100 

V

GS

 = 12V 

gfs Forward 

Transconductance 

8.5 

––– 

––– 

V

DS

 = -10V, I

D

 = -5.5A 

Q

Total Gate Charge  

––– 

12 

––– 

 

 V

DS

 = -10V 

Q

gs 

Pre-Vth Gate-to-Source Charge 

––– 

1.5 

––– 

nC V

GS

 = -4.5V 

Q

gd 

Gate-to-Drain Charge 

––– 

4.3 

–––   

I

D

 = -5.5A 

R

Gate Resistance 

––– 

17 

 

 

  

t

d(on) 

Turn-On Delay Time 

––– 

5.8 

––– 

 

V

DD

 = -10V, V

GS

 = -4.5V 

t

Rise Time 

––– 

18 

––– 

ns I

D

 = -5.5A 

t

d(off) 

Turn-Off Delay Time 

––– 

81 

–––   

R

= 6.8

 

t

Fall Time 

––– 

68 

–––   

  

C

iss 

Input Capacitance 

––– 

905 

––– 

 

V

GS

 = 0V 

C

oss 

Output Capacitance 

––– 

280 

––– 

pF V

DS

 = -10V 

C

rss 

Reverse Transfer Capacitance 

––– 

200 

–––   

ƒ = 1.0KHz 

 

Diode Characteristics 

 

 

 

 

 

  

        Parameter 

Min. 

Typ. 

Max.  Units 

Conditions 

I

Continuous Source Current  

––– ––– -2.0 

MOSFET symbol 

  

(Body Diode) 

showing  the 

I

SM 

Pulsed Source Current 

––– ––– -55 

integral reverse 

  

(Body Diode)  

p-n junction diode. 

V

SD 

Diode Forward Voltage 

––– 

––– 

-1.2 

T

J

 = 25°C, I

S

= -5.5A, V

GS

=0V  

t

rr 

Reverse Recovery Time 

––– 

41 

62 

ns 

T

= 25°C, I

F

 = -5.5A, V

DD 

= -16V 

Q

rr 

Reverse Recovery Charge 

––– 

16 

24 

nC  di/dt = 100A/µs  

µA  

G

D

S

Notes:

    

Repetitive rating;  pulse width limited by max. junction temperature. 



Pulse width 

 400µs; duty cycle  2%. 

    

When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details:  

    

http://www.irf.com/technical-info/appnotes/an-994.pdf

 

  

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irlts2242pbf-html.html
background image

 

 IRLTS2242PbF 

www.irf.com

        © 2014 International Rectifier  

 

Submit Datasheet Feedback

                   November 18, 2014 

Fig 1.  Typical Output Characteristics 

Fig 4.  Normalized On-Resistance vs. Temperature 

Fig 3.  Typical Transfer Characteristics 

Fig 2.  Typical Output Characteristics 

0.1

1

10

100

-V DS, Drain-to-Source Voltage (V)

0.1

1

10

100

-I

D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

VGS

TOP           -10V

-4.50V

-2.50V

-2.25V

-2.00V

-1.80V

-1.55V

BOTTOM

-1.40V

60µs PULSE WIDTH

Tj = 25°C

-1.40V

0.1

1

10

100

-V DS, Drain-to-Source Voltage (V)

0.1

1

10

100

-I

D

, D

ra

in

-t

o-

S

o

ur

ce

 C

ur

re

nt

 (

A

)

-1.40V

60µs PULSE WIDTH
Tj = 150°C

VGS

TOP           -10V

-4.50V

-2.50V

-2.25V

-2.00V

-1.80V

-1.55V

BOTTOM

-1.40V

0

1

2

3

4

5

-VGS, Gate-to-Source Voltage (V)

1.0

10

100

-I

D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 

(A

)

TJ = 25°C

TJ = 150°C

VDS = -10V

60µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

R

D

S

(o

n)

 ,

 D

ra

in

-t

o-

S

ou

rc

O

R

es

is

ta

nc

   

   

   

   

   

   

   

 (

N

or

m

al

iz

ed

)

ID = -6.9A

VGS = -4.5V

1

10

100

-VDS, Drain-to-Source Voltage (V)

100

1000

10000

C

, C

ap

ac

ita

nc

(p

F

)

VGS   = 0V,       f = 1 MHZ

Ciss   = Cgs + Cgd,  C ds SHORTED
Crss   = Cgd 
Coss  = Cds + Cgd

Coss

Crss

Ciss

Fig 5.  Typical Capacitance vs. Drain-to-Source Voltage 

0

5

10

15

20

25

30

 QG  Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

-V

G

S

, G

at

e-

to

-S

ou

rc

V

ol

ta

ge

 (

V

)

VDS= -16V

VDS= -10V

VDS= -4.0V

ID= -5.5A

Fig 6.  Typical Gate Charge vs. Gate-to-Source Voltage 

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irlts2242pbf-html.html
background image

 

 IRLTS2242PbF 

www.irf.com

        © 2014 International Rectifier  

 

Submit Datasheet Feedback

                   November 18, 2014 

Fig 8.  Maximum Safe Operating Area  

Fig 10.  Threshold Voltage vs. Temperature 

Fig 11.  Maximum Effective Transient Thermal Impedance, Junction-to-Case  

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

-I

S

D

, R

ev

er

se

 D

ra

in

 C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VGS = 0V

Fig 7.  Typical Source-Drain Diode Forward Voltage 

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

I D

,  

D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

Tc = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA 

LIMITED BY RDS(on)

100µsec

DC

25

50

75

100

125

150

 TA , Ambient Temperature (°C)

0

2

4

6

8

-I

D

,   

D

ra

in

 C

ur

re

nt

 (

A

)

Fig 9.  Maximum Drain Current vs. Case Temperature 

-75 -50 -25

0

25

50

75 100 125 150

TJ , Temperature ( °C )

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-V

G

S

(t

h)

,  G

at

th

re

sh

ol

V

ol

ta

ge

 (

V

)

ID = -10µA

ID = -250µA

ID = -1.0mA

ID = -10mA

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

10

100

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

100

T

he

rma

l R

es

po

ns

Z

 th

JA

 )

 °

C

/W

0.20
0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + TA

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irlts2242pbf-html.html
background image

 

 IRLTS2242PbF 

www.irf.com

        © 2014 International Rectifier  

 

Submit Datasheet Feedback

                   November 18, 2014 

Fig 14.  Maximum Avalanche Energy vs. Drain Current 

Fig 15.  Typical Power vs. Time 

Fig 13.  Typical On–Resistance vs. Drain Current 

Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET

®

 Power MOSFETs 

0

2

4

6

8

10

12

-VGS, Gate -to -Source Voltage  (V)

0

10

20

30

40

50

60

70

R

D

S

(o

n)

,  

D

ra

in

-t

-S

ou

rc

O

R

es

is

ta

nc

(m

)

ID = -6.9A

TJ = 25°C

TJ = 125°C

0

10

20

30

40

50

60

-ID, Drain Current (A)

0

50

100

150

200

250

300

350

400

450

R

D

S

(o

n)

,  

D

ra

in

-t

-S

ou

rc

O

R

es

is

ta

nc

(m

)

Vgs = -4.5V 

Vgs = -2.5V 

25

50

75

100

125

150

Starting TJ , Junction Temperature (°C)

0

20

40

60

80

100

120

E

A

S

 , 

S

in

gl

P

ul

se

 A

va

la

nc

he

 E

ne

rg

(m

J)

ID

TOP         -1.3A

-2.0A

BOTTOM -5.5A

Fig 12.  On–Resistance vs. Gate Voltage 

1E-8

1E-7

1E-6

1E-5

1E-4

1E-3

Time (sec)

0

2000

4000

6000

8000

10000

12000

14000

16000

P

ow

er

 (

W

)

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irlts2242pbf-html.html
background image

 

 IRLTS2242PbF 

www.irf.com

        © 2014 International Rectifier  

 

Submit Datasheet Feedback

                   November 18, 2014 

Fig 19a.  Switching Time Test Circuit 

Fig 19b.  Switching Time Waveforms 

Fig 18a.  Unclamped Inductive Test Circuit 

Fig 18b.  Unclamped Inductive Waveforms 

Fig 17a.  Gate Charge Test Circuit 

Fig 17b.   Gate Charge Waveform 

VDD 

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irlts2242pbf-html.html
background image

 

 IRLTS2242PbF 

www.irf.com

        © 2014 International Rectifier  

 

Submit Datasheet Feedback

                   November 18, 2014 

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package/

 

TSOP-6 Package Outline 

TSOP-6 Part Marking  Information

 

CODE

TOP

PART NUMBER

W =  WEEK

Y =  YEAR

LOT

F =  IRF5801

(as shown here) indicates Lead-Free.

Note: A line above the work week

A =  SI3443DV
B =  IRF5800

G =  IRF5803

D =  IRF5851
E =  IRF5852

I =  IRF5805

C =  IRF5850

N =  IRF5802

K =  IRF5810

PART NUMBER CODE REFERENCE:

J =  IRF5806

H =  IRF5804

O =  IRLTS6342TRPBF
P =  IRFTS8342TRPBF

S =  Not applicable

R =  IRFTS9342TRPBF

T =  IRLTS2242TRPBF

WW =  (27-52) IF PRECEDED BY A LETTER

C

H

K

J

E
F
G

D

0

2010

YEAR

B

A

Y

2007
2008
2009

2006

2005

2003
2004

2001
2002

5

7

9

8

6

3
4

1
2

C

29

Z

52

50
51

X
Y

30

D

X

24

W

WORK

WEEK

27
28

B

A

26

25

Z

Y

03
04

01
02

C
D

A
B

DATE CODE MARKING INSTRUCTIONS

WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

YEAR

Y

W

WEEK

WORK

2020

2017
2018
2019

2016

2015

2013
2014

2011
2012

2010

2007
2008
2009

2006

2005

2003
2004

2001
2002

2020

2017
2018
2019

2016

2015

2013
2014

2011
2012

 

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irlts2242pbf-html.html
background image

 

 IRLTS2242PbF 

www.irf.com

        © 2014 International Rectifier  

 

Submit Datasheet Feedback

                   November 18, 2014 

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA 

To contact International Rectifier, please visit 

http://www.irf.com/whoto-call/

    

†  Qualification standards can be found at International Rectifier’s web site: 

http://www.irf.com/product-info/reliability/

 

†† Higher qualification ratings may be available should the user have such requirements. 
     Please contact your International Rectifier sales representative for further information:  

      

http://www.irf.com/whoto-call/salesrep/

 

††† Applicable version of JEDEC standard at the time of product release. 

Qualifiction Information

† 

 

Qualification Level  

Consumer

††

 

 (per JEDEC JESD47F

†††

guidelines) 

 

Moisture Sensitivity Level  

TSOP-6 

MSL1 

(per IPC/JEDEC J-STD-020D

††)

 

RoHS Compliant 

Yes 

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package/

 

Revision History 

Date Comment 

11/18/2014 

 Updated data sheet with IR corporate template. 
Updated figure 12  on page 5 for V

GS  

from “20V” to “12V”  due to error. 

8mm

FEED DIRECTION

4mm

NOTES :
1.  OUTLINE CONFORMS TO EIA-481 & EIA-541.

9.90 ( .390 )
8.40 ( .331 )

  178.00
( 7.008 )
    MAX.

NOTES:
1.  CONTROLLING DIMENSION : MILLIMETER.
2.  OUTLINE CONFORMS TO EIA-481 & EIA-541.
     

TSOP-6 Tape and Reel Information 

Maker
Infineon Technologies