IRLTS2242PbF
1
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HEXFET
®
Power MOSFET
V
DSS
-20
V
V
GS
± 12
V
R
DS(on)
max
(@ V
GS
= -4.5V)
32
m
R
DS(on)
max
(@ V
GS
= -2.5V)
55
m
Q
g (typical)
12
nC
I
D
(@T
A
= 25°C)
-6.9 A
TSOP-6
Notes through are on page 2
Base part number
Standard Pack
Orderable Part Number
Form
Quantity
IRLTS2242TRPbF
TSOP-6
Tape and Reel
3000
IRLTS2242TRPbF
Package Type
Applications
Battery operated DC motor inverter MOSFET
System/Load Switch
Absolute Maximum Ratings
Parameter Max.
Units
V
DS
Drain-to-Source Voltage
- 20
V
V
GS
Gate-to-Source Voltage
± 12
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 4.5V
-6.9
A
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 4.5V
-5.5
I
DM
Pulsed Drain Current -55
P
D
@T
A
= 25°C
Power Dissipation
2.0
W
P
D
@T
A
= 70°C
Power Dissipation
1.3
Linear Derating Factor
0.02
W/°C
T
J
Operating Junction and
-55 to + 150
°C
T
STG
Storage Temperature Range
Features
Benefits
Industry-Standard TSOP-6 Package
results in Multi-Vendor Compatibility
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Consumer Qualification
Increased Reliability
Top View
1
2
D
G
A
D
D
D
S
3
4
5
6
IRLTS2242PbF
2
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Thermal Resistance
Parameter Typ.
Max.
Units
R
JA
Junction-to-Ambient –––
62.5
°C/W
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-20
–––
–––
V
V
GS
= 0V, I
D
= -250µA
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
–––
9.4
––– mV/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
26
32
m
V
GS
= -4.5V, I
D
= -6.9A
––– 45 55
V
GS
= -2.5V, I
D
= -5.5A
V
GS(th)
Gate Threshold Voltage
-0.4
–––
-1.1
V
V
DS
= V
GS
, I
D
= -10µA
V
GS(th)
Gate Threshold Voltage Coefficient
–––
-3.8
––– mV/°C
I
DSS
Drain-to-Source Leakage Current
–––
–––
-1.0
V
DS
= -16V, V
GS
= 0V
––– ––– -150
V
DS
= -16V, V
GS
= 0V,T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
–––
–––
-100
nA
V
GS
= -12V
Gate-to-Source Reverse Leakage
–––
–––
100
V
GS
= 12V
gfs Forward
Transconductance
8.5
–––
–––
S
V
DS
= -10V, I
D
= -5.5A
Q
g
Total Gate Charge
–––
12
–––
V
DS
= -10V
Q
gs
Pre-Vth Gate-to-Source Charge
–––
1.5
–––
nC V
GS
= -4.5V
Q
gd
Gate-to-Drain Charge
–––
4.3
–––
I
D
= -5.5A
R
G
Gate Resistance
–––
17
t
d(on)
Turn-On Delay Time
–––
5.8
–––
V
DD
= -10V, V
GS
= -4.5V
t
r
Rise Time
–––
18
–––
ns I
D
= -5.5A
t
d(off)
Turn-Off Delay Time
–––
81
–––
R
G
= 6.8
t
f
Fall Time
–––
68
–––
C
iss
Input Capacitance
–––
905
–––
V
GS
= 0V
C
oss
Output Capacitance
–––
280
–––
pF V
DS
= -10V
C
rss
Reverse Transfer Capacitance
–––
200
–––
ƒ = 1.0KHz
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
I
S
Continuous Source Current
––– ––– -2.0
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– -55
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
–––
-1.2
V
T
J
= 25°C, I
S
= -5.5A, V
GS
=0V
t
rr
Reverse Recovery Time
–––
41
62
ns
T
J
= 25°C, I
F
= -5.5A, V
DD
= -16V
Q
rr
Reverse Recovery Charge
–––
16
24
nC di/dt = 100A/µs
µA
G
D
S
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
400µs; duty cycle 2%.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
IRLTS2242PbF
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© 2014 International Rectifier
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November 18, 2014
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
0.1
1
10
100
-I
D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
VGS
TOP -10V
-4.50V
-2.50V
-2.25V
-2.00V
-1.80V
-1.55V
BOTTOM
-1.40V
60µs PULSE WIDTH
Tj = 25°C
-1.40V
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
0.1
1
10
100
-I
D
, D
ra
in
-t
o-
S
o
ur
ce
C
ur
re
nt
(
A
)
-1.40V
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP -10V
-4.50V
-2.50V
-2.25V
-2.00V
-1.80V
-1.55V
BOTTOM
-1.40V
0
1
2
3
4
5
-VGS, Gate-to-Source Voltage (V)
1.0
10
100
-I
D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
TJ = 25°C
TJ = 150°C
VDS = -10V
60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
R
D
S
(o
n)
,
D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
N
or
m
al
iz
ed
)
ID = -6.9A
VGS = -4.5V
1
10
100
-VDS, Drain-to-Source Voltage (V)
100
1000
10000
C
, C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
0
5
10
15
20
25
30
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
-V
G
S
, G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(
V
)
VDS= -16V
VDS= -10V
VDS= -4.0V
ID= -5.5A
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
IRLTS2242PbF
4
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Fig 8. Maximum Safe Operating Area
Fig 10. Threshold Voltage vs. Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
-I
S
D
, R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 150°C
VGS = 0V
Fig 7. Typical Source-Drain Diode Forward Voltage
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
DC
25
50
75
100
125
150
TA , Ambient Temperature (°C)
0
2
4
6
8
-I
D
,
D
ra
in
C
ur
re
nt
(
A
)
Fig 9. Maximum Drain Current vs. Case Temperature
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-V
G
S
(t
h)
, G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(
V
)
ID = -10µA
ID = -250µA
ID = -1.0mA
ID = -10mA
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
T
he
rma
l R
es
po
ns
e
(
Z
th
JA
)
°
C
/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
IRLTS2242PbF
5
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Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 15. Typical Power vs. Time
Fig 13. Typical On–Resistance vs. Drain Current
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET
®
Power MOSFETs
0
2
4
6
8
10
12
-VGS, Gate -to -Source Voltage (V)
0
10
20
30
40
50
60
70
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
)
ID = -6.9A
TJ = 25°C
TJ = 125°C
0
10
20
30
40
50
60
-ID, Drain Current (A)
0
50
100
150
200
250
300
350
400
450
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
)
Vgs = -4.5V
Vgs = -2.5V
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
120
E
A
S
,
S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP -1.3A
-2.0A
BOTTOM -5.5A
Fig 12. On–Resistance vs. Gate Voltage
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
Time (sec)
0
2000
4000
6000
8000
10000
12000
14000
16000
P
ow
er
(
W
)
IRLTS2242PbF
6
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© 2014 International Rectifier
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November 18, 2014
Fig 19a. Switching Time Test Circuit
Fig 19b. Switching Time Waveforms
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
VDD
IRLTS2242PbF
7
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November 18, 2014
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
TSOP-6 Package Outline
TSOP-6 Part Marking Information
CODE
TOP
PART NUMBER
W = WEEK
Y = YEAR
LOT
F = IRF5801
(as shown here) indicates Lead-Free.
Note: A line above the work week
A = SI3443DV
B = IRF5800
G = IRF5803
D = IRF5851
E = IRF5852
I = IRF5805
C = IRF5850
N = IRF5802
K = IRF5810
PART NUMBER CODE REFERENCE:
J = IRF5806
H = IRF5804
O = IRLTS6342TRPBF
P = IRFTS8342TRPBF
S = Not applicable
R = IRFTS9342TRPBF
T = IRLTS2242TRPBF
WW = (27-52) IF PRECEDED BY A LETTER
C
H
K
J
E
F
G
D
0
2010
YEAR
B
A
Y
2007
2008
2009
2006
2005
2003
2004
2001
2002
5
7
9
8
6
3
4
1
2
C
29
Z
52
50
51
X
Y
30
D
X
24
W
WORK
WEEK
27
28
B
A
26
25
Z
Y
03
04
01
02
C
D
A
B
DATE CODE MARKING INSTRUCTIONS
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
YEAR
Y
W
WEEK
WORK
2020
2017
2018
2019
2016
2015
2013
2014
2011
2012
2010
2007
2008
2009
2006
2005
2003
2004
2001
2002
2020
2017
2018
2019
2016
2015
2013
2014
2011
2012
IRLTS2242PbF
8
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© 2014 International Rectifier
Submit Datasheet Feedback
November 18, 2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit
http://www.irf.com/whoto-call/
† Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com/product-info/reliability/
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Qualifiction Information
†
Qualification Level
Consumer
††
(per JEDEC JESD47F
†††
guidelines)
Moisture Sensitivity Level
TSOP-6
MSL1
(per IPC/JEDEC J-STD-020D
††)
RoHS Compliant
Yes
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
Revision History
Date Comment
11/18/2014
Updated data sheet with IR corporate template.
Updated figure 12 on page 5 for V
GS
from “20V” to “12V” due to error.
8mm
FEED DIRECTION
4mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
TSOP-6 Tape and Reel Information