IRLML6246PBF Datasheet

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10/12/12

IRLML6246TRPbF

HEXFET

®

 Power MOSFET

www.irf.com

1

ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.

Notes

  through 

„

 are on page 10

Application(s)

Micro3

TM

 

(SOT-23)

IRLML6246TRPbF

D

S

G

3

1

2

• Load/ System Switch

Features and Benefits

Features

Benefits

V

DS

20

V

V

GS Max

± 12

V

R

DS(on) max 

(@V

GS

 = 4.5V)

46

m

:

R

DS(on) max 

(@V

GS

 = 2.5V)

66

m

:

Absolute Maximum Ratings

Symbol

Parameter

Units

V

DS

Drain-Source Voltage

V

I

D

 @ T

A

 = 25°C

Continuous Drain Current, V

GS

 @ 10V

I

D

 @ T

A

 = 70°C

Continuous Drain Current, V

GS

 @ 10V

I

DM

Pulsed Drain Current 

P

D

 @T

A

 = 25°C

Maximum Power Dissipation  

P

D

 @T

A

 = 70°C

Maximum Power Dissipation  

Linear Derating Factor

W/°C

V

GS

Gate-to-Source Voltage

V

T

J, 

T

STG

Junction and Storage Temperature Range

°C

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

R

θJA 

Junction-to-Ambient 

e

–––

100

R

θJA 

Junction-to-Ambient (t<10s) 

f

–––

99

W

°C/W

A

Max.

4.1

3.3

-55  to + 150

 ± 12

0.01

20

1.3

0.8

16

Industry-standard SOT-23 Package   

Multi-vendor compatibility

RoHS compliant containing no lead, no bromide and no halogen 

results in

Environmentally friendly

PD - 97529A

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2

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D

S

G

Electric Characteristics @ T

J

 = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage

20

–––

–––

V

ΔV

(BR)DSS

/

ΔT

Breakdown Voltage Temp. Coefficient

–––

0.03

–––

V/°C

–––

30

46

–––

45

66

V

GS(th)

Gate Threshold Voltage

0.5

0.8

1.1

V

I

DSS

–––

–––

1.0

–––

–––

10

–––

–––

150

I

GSS

Gate-to-Source Forward Leakage

–––

–––

100

Gate-to-Source Reverse Leakage

–––

–––

-100

R

G

Internal Gate Resistance

–––

4.0

–––

Ω

gfs

Forward Transconductance

10

–––

–––

S

Q

g

Total Gate Charge

–––

3.5

–––

Q

gs

Gate-to-Source Charge

–––

0.26

–––

Q

gd

Gate-to-Drain ("Miller") Charge

–––

1.7

–––

t

d(on)

Turn-On Delay Time

–––

3.6

–––

t

r

Rise Time

–––

4.9

–––

t

d(off)

Turn-Off Delay Time

–––

11

–––

t

f

Fall Time

–––

6.0

–––

C

iss

Input Capacitance

–––

290

–––

C

oss

Output Capacitance

–––

64

–––

C

rss

Reverse Transfer Capacitance

–––

41

–––

Source - Drain Ratings and Characteristics

Symbol

        Parameter

Min. Typ. Max. Units

I

S

Continuous Source Current 

(Body Diode)

I

SM

Pulsed Source Current

(Body Diode)

c

V

SD

Diode Forward Voltage

–––

–––

1.2

V

t

rr

Reverse Recovery Time

–––

8.6

13

ns

Q

rr

Reverse Recovery Charge

–––

2.8

4.2

nC

I

D

 = 1.0A

T

J

 = 25°C, V

R

 = 15V, I

F

=1.3A

V

DS

 = 16V, V

GS

 = 0V, T

J

 = 55°C

V

DS

 = 16V

ƒ = 1.0MHz

R

G

 = 6.8

Ω

V

GS

 = 4.5V 

d

di/dt = 100A/μs 

d

V

GS

 = 12V

V

GS

 = -12V

T

J

 = 25°C, I

S

 = 4.1A, V

GS

 = 0V 

d

integral reverse

p-n junction diode.

Conditions

V

GS

 = 0V, I

D

 = 250μA

Reference to 25°C, I

D

 = 1mA

V

GS

 = 4.5V, I

D

 =

 

4.1A 

d

MOSFET symbol

showing  the

V

DS

 =10V

Conditions

V

GS

 = 4.5V

V

GS

 = 0V

R

DS(on)

V

GS

 = 2.5V, I

D

 =

 

3.3A 

d

Static Drain-to-Source On-Resistance

Drain-to-Source Leakage Current

μA

m

Ω

V

DD

 =10V

d

nA

nC

ns

V

DS

 = V

GS

, I

D

 = 5μA

V

DS

 =16V, V

GS

 = 0V

V

DS

 = 16V, V

GS

 = 0V, T

J

 = 125°C

V

DS

 = 10V, I

D

 = 4.1A

I

D

 = 4.1A

–––

–––

–––

–––

pF

A

1.3

16

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3

Fig 3.  Typical Transfer Characteristics

Fig 2.  Typical Output Characteristics

Fig 1.  Typical Output Characteristics

Fig 4.  Normalized On-Resistance

Vs. Temperature

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

≤60μs  PULSE WIDTH 

Tj = 25°C

1.5V

VGS

TOP          

10V
4.5V
3.0V
2.5V
2.3V
2.0V
1.8V

BOTTOM

1.5V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

≤60μs  PULSE WIDTH 

Tj = 150°C

1.5V

VGS

TOP          

10V
4.5V
3.0V
2.5V
2.3V
2.0V
1.8V

BOTTOM

1.5V

1.0

1.5

2.0

2.5

3.0

3.5

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VDS = 15V
≤60μs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

R

D

S

(o

n)

 , 

D

ra

in

-t

o-

S

ou

rc

O

R

es

is

ta

nc

   

   

   

   

   

   

   

 (

N

or

m

al

iz

ed

)

ID = 4.1A

VGS = 4.5V

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Fig 6.  Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5.  Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 8.  Maximum Safe Operating Area

Fig 7.  Typical Source-Drain Diode

Forward Voltage

1

10

100

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

C

, C

ap

ac

ita

nc

(p

F

)

VGS   = 0V,       f = 1 MHZ

Ciss   = Cgs + Cgd,  C ds SHORTED

Crss   = Cgd 
Coss  = Cds + Cgd

Coss
Crss

Ciss

0.2

0.4

0.6

0.8

1.0

1.2

VSD, Source-to-Drain Voltage (V)

0.0

0

1

10

100

I S

D

, R

ev

er

se

 D

ra

in

 C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VGS = 0V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

I D

,  

D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

TA = 25°C
Tj = 150°C
Single Pulse

1msec

10msec

OPERATION IN THIS AREA 
LIMITED BY RDS(on)

100μsec

0.0

2.0

4.0

6.0

8.0

 QG,  Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

V

G

S

, G

at

e-

to

-S

ou

rc

V

ol

ta

ge

 (

V

)

VDS= 16V
VDS= 10V
VDS= 4.0V

ID= 4.1A

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5

Fig 11.  Typical Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9.  Maximum Drain Current Vs.

 Ambient Temperature

V

DS

90%

10%
V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b.  Switching Time Waveforms

Fig 10a.  Switching Time Test Circuit

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

V

GS

+

-

V

DD

25

50

75

100

125

150

TA , Ambient Temperature (°C)

0.0

1.0

2.0

3.0

4.0

5.0

I D

  ,

 D

ra

in

 C

ur

re

nt

 (

A

)

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

10

t1 , Rectangular Pulse Duration (sec)

0.01

0.1

1

10

100

1000

T

he

rm

al

 R

es

po

ns

Z

 th

JA

 )

0.20

0.10

D = 0.50

0.02
0.01

0.05

SINGLE PULSE
( THERMAL RESPONSE )

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

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Fig 13.   Typical On-Resistance Vs. Drain

Current

Fig 12.   Typical On-Resistance Vs. Gate

Voltage

Fig 14b.  Gate Charge Test Circuit

Fig 14a.  Basic Gate Charge Waveform

1K

VCC

DUT

0

L

S

20K

Vds

Vgs

Id

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

0

5

10

15

20

25

30

ID, Drain Current (A)

20

40

60

80

100

120

R

D

S

(o

n)

,  

D

ra

in

-t

-S

ou

rc

O

R

es

is

ta

nc

(

m

Ω

)

Vgs = 10V 

Vgs = 4.5V 

0

1

2

3

4

5

6

7

8

9 10 11 12

VGS, Gate -to -Source Voltage  (V)

20

40

60

80

R

D

S

(o

n)

,  

D

ra

in

-t

-S

ou

rc

O

R

es

is

ta

nc

(m

Ω

)

ID = 4.1A

TJ = 25°C

TJ = 125°C

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7

Fig 15.  Typical Threshold Voltage Vs.

Junction Temperature

Fig 16.   Typical Power Vs. Time

-75 -50 -25

0

25

50

75 100 125 150

TJ , Temperature ( °C )

0.0

0.5

1.0

1.5

V

G

S

(t

h)

,  G

at

th

re

sh

ol

V

ol

ta

ge

 (

V

)

ID = 10uA
ID = 250uA

1E-005 0.0001

0.001

0.01

0.1

1

10

Time (sec)

0

20

40

60

80

100

P

ow

er

 (

W

)

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Micro3™(SOT-23) Part Marking Information

Micro3™(SOT-23) Package Outline

Dimensions are shown in millimeters (inches)

Note: For the most current drawing please refer to IR website at: 

http://www.irf.com/package/

e

E1

E

D

A

B

0.15 [0.006]

e1

1

2

3

M C B A

5

6

6

5

NOTES:

b

A1

3X

A

A2

A

B

C

M

0.20 [0.008]

0.10 [0.004] C

C

1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994

2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES 
  NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS 
  OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.

0.89

1.12

SYMBOL

MAX

MIN

A1

b

0.01

0.10

c

0.30

0.50

D

0.08

0.20

E

2.80

3.04

E1

2.10

2.64

e

1.20

1.40

A

0.95

BSC

L

0.40

0.60

0

8

MILLIMETERS

A2

0.88

1.02

e1

1.90

BSC

REF

0.54

L1

BSC

0.25

L2

BSC

REF

%6&

INCHES

8

0

%6&

0.0004

MIN

MAX

DIMENSIONS

0.972

1.900

Recommended Footprint

0.802

0.950

2.742

3X L

c

L2

H 4

L1

 7

F =  IRLML6401

A

2001

A

27

LOT CODE

LEAD FREE

DATE CODE

E =  IRLML6402

X =  PART NUMBER CODE REFERENCE:

D =  IRLML5103

C =  IRLML6302

B =  IRLML2803

A =  IRLML2402

W =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

W =  (27-52) IF PRECEDED BY A LETTER

Y

8

2008

3

2003

1

2001

YEAR

2002

2

5

2005

2004

4

2007

2006

7

6

2010

0

2009

9

YEAR

Y

C

03

WORK

WEEK

01
02

A

W

B

04

D

24

26

25

X

Z

Y

WORK

WEEK

W

H =  IRLML5203

G =  IRLML2502

K

H

G

F

E

D

C

B

2006

2003

2002

2005

2004

2008

2007

2010

2009

J

Y

51

29

28

30

C

B

D

50

X

52

Z

Note: A line above the work week

(as shown here) indicates Lead - Free.

S =  IRLML6244
T =  IRLML6246
U=  IRLML6344
V =  IRLML6346

I  =  IRLML0030
J =  IRLML2030

L =  IRLML0060
M =  IRLML0040

K =  IRLML0100

N =  IRLML2060
P =  IRLML9301
R =  IRLML9303

Cu WIRE

HALOGEN FREE

PART NUMBER

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Micro3™(SOT-23) Tape & Reel Information

Dimensions are shown in millimeters (inches)

2.05 ( .080 )
1.95 ( .077 )

TR

FEED DIRECTION

4.1 ( .161 )
3.9 ( .154 )

1.6 ( .062 )
1.5 ( .060 )

1.85 ( .072 )
1.65 ( .065 )

3.55 ( .139 )
3.45 ( .136 )

1.1 ( .043 )
0.9 ( .036 )

4.1 ( .161 )
3.9 ( .154 )

0.35 ( .013 )
0.25 ( .010 )

8.3 ( .326 )
7.9 ( .312 )

1.32 ( .051 )
1.12 ( .045 )

9.90 ( .390 )
8.40 ( .331 )

  178.00
( 7.008 )
    MAX.

NOTES:
1.  CONTROLLING DIMENSION : MILLIMETER.
2.  OUTLINE CONFORMS TO EIA-481 & EIA-541.
     

Note: For the most current drawing please refer to IR website at: 

http://www.irf.com/package/

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Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 101N. Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.10/2012

†         Qualification standards can be found at International Rectifier’s web site

            http://www.irf.com/product-info/reliability

††      Higher qualification ratings may be available should the user have such requirements.

            Please contact your International Rectifier sales representative for further information:

           http://www.irf.com/whoto-call/salesrep/

†††   Applicable version of JEDEC standard at the time of product release.

Notes:



 Repetitive rating;  pulse width limited by max. junction temperature.

‚

  Pulse width ≤ 400μs; duty cycle ≤ 2%.

ƒ

  Surface mounted on 1 in square Cu board

„

  Refer to 

application note #AN-994.

MSL1

(per IPC/JEDEC J-STD-020D

††† 

)

RoHS compliant

Yes

Micro3

™(SOT-23)

Qualification information

Moisture Sensitivity Level

Qualification level

Consumer

††

(per JEDEC JESD47F

 ††† 

guidelines )

Note

Form

Quantity

IRLML6246TRPbF

Micro3™(SOT-23)

Tape and Reel

3000

Orderable part number

Package Type

Standard Pack

Date

Comments

10/12/2012

Added IDSS @ 16V, T

= 55C-pg2

Revision History 

Maker
Infineon Technologies
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