IRLML5203PbF Product Datasheet

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background image

Parameter

Max.

Units

V

DS

Drain- Source Voltage

-30

V

I

D

 @ T

A

 = 25°C

Continuous Drain Current, V

GS

 @ -10V

-3.0

I

D

 @ T

A

= 70°C

Continuous Drain Current, V

GS

 @ -10V

-2.4

A

I

DM

Pulsed Drain Current 



-24

P

@T

A

 = 25°C

Power Dissipation

1.25

P

@T

A

 = 70°C

Power Dissipation

0.80

Linear Derating Factor

10

mW/°C

V

GS

Gate-to-Source Voltage

 ± 20

V

T

J, 

T

STG

Junction and Storage Temperature Range

-55  to + 150

°C

Parameter

Max.

Units

R

θJA

Maximum Junction-to-Ambient

ƒ

100

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

HEXFET

®

 Power MOSFET

These P-channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve the extremely low
on-resistance per silicon area.  This benefit provides the
designer with an extremely efficient device for use in battery
and load management applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce a
HEXFET Power MOSFET with the industry's smallest footprint.
This package, dubbed the Micro3

TM

, is ideal for applications

where printed circuit board space is at a premium.  The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards. The thermal resistance and
power dissipation are the best available.

Description

l

Ultra Low On-Resistance

l

 P-Channel MOSFET

l

Surface Mount

l

Available in Tape & Reel

l

Low Gate Charge

l

Lead-Free

l

RoHS Compliant, Halogen-Free

V

DSS

R

DS(on)

 max (m

W)

I

D

-30V

98@V

GS

 = -10V

-3.0A

165@V

GS

 = -4.5V

-2.6A

S

G 1

2

D

3

Micro3

TM

IRLML5203PbF

Form

Quantity

IRLML5203TRPbF

Micro3™ (SOT-23)

Tape and Reel

3000

IRLML5203TRPbF

Package Type

Standard Pack

 Orderable Part Number

Base Part  Number

1

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IRLML5203PbF

 Parameter

Min. Typ. Max. Units

       Conditions

I

S

Continuous Source Current

MOSFET symbol

(Body Diode)

showing  the

I

SM

Pulsed Source Current

integral reverse

(Body Diode) 



p-n junction diode.

V

SD

Diode Forward Voltage

––– ––– -1.2

V

T

J

 = 25°C, I

S

 = -1.3A, V

GS

 = 0V

 ‚

t

rr

Reverse Recovery Time

–––

17

 26

ns

T

J

 = 25°C, I

F

 = -1.3A

Q

rr

Reverse Recovery Charge

–––

12

 18

nC

di/dt = -100A/μs

 

‚

Source-Drain Ratings and Characteristics

A

-24

–––

–––

–––

-1.3

–––

S

D

G



 Repetitive rating;  pulse width limited by

     max. junction temperature.

Notes:

‚

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

ƒ

  Surface mounted on FR-4 board,  t ≤  5sec.

Parameter

Min. Typ. Max. Units

Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage

-30

––– –––

V

V

GS

 = 0V, I

D

 = -250μA

ΔV

(BR)DSS

/

ΔT

J

Breakdown Voltage Temp. Coefficient

––– 0.019 –––

V/°C Reference to 25°C, I

D

 = -1mA

–––

–––

 98

V

GS

 = -10V, I

D

 = -3.0A 

‚

–––

–––  165

V

GS

 = -4.5V, I

D

 = -2.6A 

‚

V

GS(th)

Gate Threshold Voltage

-1.0 ––– -2.5

V

V

DS

 = V

GS

, I

D

 = -250μA

g

fs

Forward Transconductance

3.1

––– –––

S

V

DS

 = -10V, I

D

 = -3.0A

–––

––– -1.0

V

DS

 = -24V, V

GS

 = 0V

–––

––– -5.0

V

DS

 = -24V, V

GS

 = 0V, T

J

 = 70°C

Gate-to-Source Forward Leakage

–––

––– -100

V

GS

 = -20V

Gate-to-Source Reverse Leakage

–––

––– 100

V

GS

 = 20V

Q

g

Total Gate Charge

–––

9.5

14

I

D

 = -3.0A

Q

gs

Gate-to-Source Charge

–––

2.3

3.5

nC

V

DS

 = -24V

Q

gd

Gate-to-Drain ("Miller") Charge

–––

1.6

2.4

V

GS

 = -10V 

‚

t

d(on)

Turn-On Delay Time

–––

12

–––

V

DD

 = -15V 

‚

t

r

Rise Time

–––

18

–––

I

D

 = -1.0A

t

d(off)

Turn-Off Delay Time

–––

88

–––

R

G

 = 6.0

Ω

t

f

Fall Time

–––

52

–––

V

GS

 = -10V

C

iss

Input Capacitance

–––

510 –––

V

GS

 = 0V

C

oss

Output Capacitance

–––

71

–––

pF

V

DS

 = -25V

C

rss

Reverse Transfer Capacitance

–––

43

–––

ƒ = 1.0MHz

Electrical Characteristics @ T

J

 = 25°C (unless otherwise specified)

I

GSS

µA

m

Ω

R

DS(on)

Static Drain-to-Source On-Resistance

I

DSS

Drain-to-Source Leakage Current

nA

ns

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IRLML5203PbF

Fig 4.  Normalized On-Resistance

Vs. Temperature

Fig 2.  Typical Output Characteristics

Fig 1.  Typical Output Characteristics

Fig 3.  Typical Transfer Characteristics

-60 -40 -20

0

20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T  , Junction Temperature (  C)

R            , Drain-to-Source On Resistance

(Normalized)

J

D

S

(on)

°

V

=

I =

GS

D

-10V

3.0A

0.01

0.1

 1

 10

 100

0.1

 1

 10

 100

20μs PULSE WIDTH

T  = 25 C

J

°

TOP

BOTTOM

VGS

-15V

-10V

-7.0V

-5.5V

-4.5V

-4.0V

-3.5V

-2.7V

-V     , Drain-to-Source Voltage (V)

-I   ,  Drain-to-Source Current (A)

DS

D

-2.70V

0.1

 1

 10

 100

0.1

 1

 10

 100

20μs PULSE WIDTH

T  = 150 C

J

°

TOP

BOTTOM

VGS

-15V

-10V

-7.0V

-5.5V

-4.5V

-4.0V

-3.5V

-2.7V

-V     , Drain-to-Source Voltage (V)

-I   ,  Drain-to-Source Current (A)

DS

D

-2.70V

0.1

 1

 10

 100

2.0

3.0

4.0

5.0

6.0

7.0

V      = -15V
20μs PULSE WIDTH

DS

-V     , Gate-to-Source Voltage (V)

-I   ,  Drain-to-Source Current (A)

GS

D

T  = 25  C

J

°

T  = 150  C

J

°

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IRLML5203PbF

Fig 8.  Maximum Safe Operating Area

Fig 6.  Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5.  Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7.  Typical Source-Drain Diode

Forward Voltage

0

4

8

12

16

0

4

8

12

16

20

Q   , Total Gate Charge (nC)

-V     , Gate-to-Source Voltage (V)

G

GS

I =

D

-3.0A

V

=-15V

DS

V

=-24V

DS

0.1

 1

 10

 100

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-V     ,Source-to-Drain Voltage (V)

-I     , Reverse Drain Current (A)

SD

SD

V      = 0 V 

GS

T  = 25  C

J

°

T  = 150  C

J

°

0.1

 1

 10

 100

0.1

 1

 10

 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

 Single Pulse

 T

 T

= 150  C

= 25  C

°

°

J

A

-V     , Drain-to-Source Voltage (V)

-I   , Drain Current (A)I   , Drain Current (A)

DS

D

10us

100us

1ms

10ms

 1

 10

 100

0

200

400

600

800

-V     , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V

C

C

C

=

=

=

=

0V,

C

C

C

f = 1MHz

+ C

+ C

C      SHORTED

GS
iss

gs

gd ,

ds

rss

gd

oss

ds

gd

C

iss

C

oss

C

rss

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IRLML5203PbF

Fig 11.  Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9.  Maximum Drain Current Vs.

Case Temperature

25

50

75

100

125

150

0.0

1.0

2.0

3.0

T   , Case Temperature (  C)

-I   , Drain Current (A)

°

C

D

0.1

 1

 10

 100

 1000

0.00001

0.0001

0.001

0.01

0.1

 1

 10

Notes:

1. Duty factor D = t   / t
2. Peak T = P

x  Z

+ T

1

2

J

DM

thJA

A

P

t

t

DM

1

2

t  , Rectangular Pulse Duration (sec)

Ther

m

al

 R

esponse

(Z

        )

1

th

JA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

V

DS

V

GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

V

DD

R

G

D.U.T.

+

-

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10a.  Switching Time Test Circuit

Fig 10b.  Switching Time Waveforms

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IRLML5203PbF

Fig 12.   Typical On-Resistance Vs. Drain

Current

Fig 11.   Typical On-Resistance Vs. Gate

Voltage

Fig 13b.  Gate Charge Test Circuit

Fig 13a.  Basic Gate Charge Waveform

Q

G

Q

GS

Q

GD

V

G

Charge

D.U.T.

V

DS

I

D

I

G

-3mA

V

GS

.3

μF

50K

Ω

.2

μF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

0

4

8

12

16

-ID , Drain Current (A)

0.00

0.10

0.20

0.30

0.40

R

D

S

 (

on

, D

ra

in

-t

o-

S

ou

rc

O

R

es

is

ta

nc

)

VGS = -10V

VGS = -4.5V

4.0

6.0

8.0

10.0

12.0

14.0

16.0

-VGS, Gate -to -Source Voltage  (V)

0.07

0.08

0.09

0.10

0.11

0.12

0.13

0.14

R

D

S

(o

n)

 D

ra

in

-t

-S

ou

rc

O

R

es

is

ta

nc

)

ID = -3.0A

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IRLML5203PbF

Fig 14.  Threshold Voltage Vs. Temperature

Fig 15.   Typical Power Vs. Time

0.001

0.010

0.100

1.000

10.000

100.000

Time (sec)

0

10

20

30

P

ow

er

 (

W

)

-75

-50

-25

0

25

50

75

100 125 150

TJ , Temperature ( °C )

1.5

2.0

2.5

-V

G

S

(t

h)

 ,

  V

ar

ia

ce

 (

 V

 )

ID = -250μA

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IRLML5203PbF

Micro3 (SOT-23 / TO-236AB)  Part Marking Information

Micro3 (SOT-23) (Lead-Free) Package Outline

Dimensions are shown in millimeters (inches)

0.08

0.88

0.01

0.89

0.95 BSC

MILLIME TERS
MIN

e

E

E1

D

L

A

A1
A2

c

M

O

B

S

Y

MIN

MAX

MAX

.036

.0375 BSC

DIME NSIONS

INCHES

b

0.30

bbb

0.15

.008

ccc

.006

0.25 BS C

L1

L

0.40

0.60

.0118 BSC

aaa

0.20

.004

2.80

1.20

0

E1

E

D

5

6

3

1

2

ccc

C B A

B

5

6

e

e1

A2

A

A1

bbb

C A B

3X b

aaa C

3 S URF

0

3X L

L1

H

4

7

2.10

e1

1.90 BSC

.075 BSC

.0119
.0032

.111
.083
.048

.055

.119
.103

.0196
.0078

.0039

.044

.0004

.035

.040

.0236

.0158

1.02

0.20

0.50

2.64

3.04

1.40

1.12
0.10

0.10

1.90

[.075]

0.95

[.0375]

0.972

[.038]

2.742

[.1079]

     0.802

     [.031]

RECOMMENDED FOOTPRINT

3X

3X

NOT ES

1.  DIMENSIONING AND T OLERANCING PER ASME Y14.5M-1994.

4    DATUM PLANE  H IS LOCATED AT  T HE MOLD  PART ING LINE.
5   DATUM A AND B T O BE DET ERMINED AT  DAT UM PLANE H.
6   DIMENSIONS D AND E1 ARE MEASURED AT  DAT UM PLANE H.

2.  DIMENSIONS  ARE SHOWN  IN MILLIMETERS  AND INCHES.
3.  CONT ROLLING DIMENSION: MILLIMET ER.

7   DIMENSION L IS T HE LEAD LENGTH FOR SOLDERING T O A SUBST RATE.
8.  OUT LINE CONFORMS TO JEDEC OUT LINE T O-236AB.

F = IRLML6401

A

2001

A

27

Notes: This part marking information applies to devices produced after 02/26/2001

ASSEMBLY LOT CODE

LEAD-FREE

DATE CODE

E = IRLML6402

X = PART NUMBER CODE REFERENCE:

D = IRLML5103

C = IRLML6302

B = IRLML2803

A = IRLML2402

W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

W = (27-52) IF PRECEDED BY A LETTER

Y

8

2008

3

2003

1

2001

YEAR

2002

2

5

2005

2004

4

2007

2006

7

6

2010

0

2009

9

YEAR

Y

C

03

WORK 

WEEK

01
02

A

W

B

04

D

24

26

25

X

Z

Y

WORK 

WEEK

W

H = IRLML5203

G = IRLML2502

K

H

G

F

E

D

C

B

2006

2003

2002

2005

2004

2008

2007

2010

2009

J

Y

51

29

28

30

C

B

D

50

X

I  = IRLML0030
J = IRLML2030

L = IRLML0060

M = IRLML0040

K = IRLML0100

N = IRLML2060

P = IRLML9301

R = IRLML9303

Cu WIRE

HALOGEN FREE

PART NUMBER

52

Z

DATE CODE EXAMPLE:

YWW = 432 = DF

YWW = 503 = 5C

2018

2013

2011
2012

2015

2014

2017

2016

2020

2019

2018

2013

2011
2012

2015

2014

2017

2016

2020

2019

W = IRFML8244

V = IRLML6346

U = IRLML6344

T = IRLML6246

S = IRLML6244

Y = IRLML2246

X = IRLML2244

Z = IRFML9244

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package

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IRLML5203PbF

Micro3™ Tape & Reel Information

Dimensions are shown in millimeters (inches)

2.05 ( .080 )
1.95 ( .077 )

TR

FEED DIRECTION

4.1 ( .161 )
3.9 ( .154 )

1.6 ( .062 )
1.5 ( .060 )

1.85 ( .072 )
1.65 ( .065 )

3.55 ( .139 )
3.45 ( .136 )

1.1 ( .043 )
0.9 ( .036 )

4.1 ( .161 )
3.9 ( .154 )

0.35 ( .013 )
0.25 ( .010 )

8.3 ( .326 )
7.9 ( .312 )

1.32 ( .051 )
1.12 ( .045 )

9.90 ( .390 )
8.40 ( .331 )

  178.00
( 7.008 )
    MAX.

NOTES:
1.  CONTROLLING DIMENSION : MILLIMETER.
2.  OUTLINE CONFORMS TO EIA-481 & EIA-541.
     

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package

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IRLML5203PbF

MS L1

(per JEDEC J-S TD-020D

†† 

)

RoHS compliant

Yes

Qualification information

Qualification level

Consumer

(per JEDEC JES D47F

††

 guidelines)

Moisture Sensitivity Level

Micro3

™ (SOT-23)

†     Qualification standards can be found at International Rectifier’s web site:

 

http://www.irf.com/product-info/reliability

††   

Applicable version of JEDEC standard at the time of product release

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit 

http://www.irf.com/whoto-call/

Revision History

Date

Comment

• Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 8.
• Added Qualification table -Qual level "Consumer" on page 10.
• Added bullet point in the  Benefits  "RoHS Compliant, Halogen -Free" on page 1.

4/28/2014

Maker
Infineon Technologies