HEXFET
®
Power MOSFET
These N-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
®
power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3
™, is ideal for applications where printed circuit
board space is at a premium. The low profile (<1.1mm) of the Micro3
allows it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
V
DSS
= 20V
R
DS(on)
= 0.045
Ω
l
Ultra Low On-Resistance
l
N-Channel MOSFET
l
SOT-23 Footprint
l
Low Profile (<1.1mm)
l
Available in Tape and Reel
l
Fast Switching
l
Lead-Free
l
RoHS Compliant, Halogen-Free
Description
Micro3
™
D
S
G
3
1
2
IRLML2502PbF
Parameter
Max.
Units
V
DS
Drain- Source Voltage
20
V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 4.5V
4.2
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 4.5V
3.4
A
I
DM
Pulsed Drain Current
33
P
D
@T
A
= 25°C
Power Dissipation
1.25
P
D
@T
A
= 70°C
Power Dissipation
0.8
Linear Derating Factor
0.01
W/°C
V
GS
Gate-to-Source Voltage
± 12
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
W
Form
Quantity
IRLML2502TRPbF
Micro3™ (SOT-23)
Tape and Reel
3000
IRLML2502TRPbF
Package Type
Standard Pack
Orderable Part Number
Base Part Number
Parameter
Typ.
Max.
Units
R
θJA
Maximum Junction-to-Ambient
75
100
°C/W
Thermal Resistance
1
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IRLML2502PbF
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
ΔV
(BR)DSS
/
ΔT
J
Breakdown Voltage Temp. Coefficient
–––
0.01
–––
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
–––
0.035
0.045
Ω
–––
0.050
0.080
V
GS(th)
Gate Threshold Voltage
0.60
–––
1.2
V
ΔV
GS(th)
Gate Threshold Voltage Coefficient
–––
-3.2
–––
mV/°C
gfs
Forward Transconductance
5.8
–––
–––
S
I
DSS
Drain-to-Source Leakage Current
–––
–––
1.0
–––
–––
25
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Q
g
Total Gate Charge
–––
8.0
12
Q
gs
Gate-to-Source Charge
–––
1.8
2.7
Q
gd
Gate-to-Drain ("Miller") Charge
–––
1.7
2.6
t
d(on)
Turn-On Delay Time
–––
7.5
–––
t
r
Rise Time
–––
10
–––
t
d(off)
Turn-Off Delay Time
–––
54
–––
t
f
Fall Time
–––
26
–––
C
iss
Input Capacitance
–––
740
–––
C
oss
Output Capacitance
–––
90
–––
C
rss
Reverse Transfer Capacitance
–––
66
–––
Source-Drain Rating and Characteristics
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)c
V
SD
Diode Forward Voltage
–––
–––
1.2
V
t
rr
Reverse Recovery Time
–––
16
24
ns
Q
rr
Reverse Recovery Charge
–––
8.6
13
nC
MOSFET symbol
nA
ns
A
pF
nC
V
DS
= 10V
V
GS
= 12V
V
GS
= -12V
Conditions
V
GS
= 0V, I
D
= 250uA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 4.5V, I
D
= 4.2A d
–––
–––
33
–––
–––
1.3
Conditions
R
D
= 10
Ω d
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 1.3A
di/dt = 100A/μs d
T
J
= 25°C, I
S
= 1.3A, V
GS
= 0V d
showing the
integral reverse
p-n junction diode.
R
G
= 6
Ω
V
DS
= 10V, I
D
= 4.0A
V
DS
= 16V, V
GS
= 0V, T
J
= 70°C
μA
V
GS
= 5.0V d
I
D
= 1.0A
V
GS
= 0V
V
DS
= 15V
I
D
= 4.0A
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 2.5V, I
D
= 3.6A d
V
DS
= 16V, V
GS
= 0V
V
DD
= 10V
3
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IRLML2502PbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20
0
20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
D
S
(on)
°
V
=
I =
GS
D
4.5V
4.0A
1
10
100
0.1
1
10
100
20μs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
V , Drain-to-Source Voltage (V)
I , D
rain-to-S
ource C
urrent (A
)
DS
D
2.25V
1
10
100
0.1
1
10
100
20μs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
V , Drain-to-Source Voltage (V)
I , D
rain-to-S
ource C
urrent (A
)
DS
D
2.25V
10
100
2.0
2.4
2.8
3.2
3.6
4.0
V = 15V
20μs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , D
rain-to-S
ource C
urrent (A
)
GS
D
T = 25 C
J
°
T = 150 C
J
°
4
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IRLML2502PbF
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
4
8
12
16
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
4.0A
V
= 10V
DS
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
1000
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1
10
100
0
200
400
600
800
1000
1200
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
rss
C
oss
C
iss
5
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IRLML2502PbF
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Ther
m
al
R
esponse
(Z
)
1
th
JA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
6
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IRLML2502PbF
Fig 12. On-Resistance Vs. Drain Current
Fig 11. On-Resistance Vs. Gate Voltage
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
VGS, Gate -to -Source Voltage ( V )
0.02
0.03
0.04
0.05
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
V
ol
ta
ge
(
Ω
)
Id = 4.0A
0
10
20
30
40
iD , Drain Current ( A )
0.00
0.10
0.20
0.30
R
D
S
(
o
n
)
, D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
( Ω
)
VGS = 4.5V
VGS = 2.5V
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
0.5
0.7
0.9
1.1
1.3
V
G
S
(t
h)
,
G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(
V
)
ID = 50μA
ID = 250μA
Fig 13. Threshold Voltage Vs. Temperature
7
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IRLML2502PbF
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
0.08
0.88
0.01
0.89
0.95 BSC
MILLIMETERS
MIN
e
E
E1
D
L
A
A1
A2
c
M
O
B
S
Y
MIN
MAX
MAX
.036
.0375 BSC
DIMENSIONS
INCHES
b
0.30
bbb
0.15
.008
ccc
.006
0.25 BSC
L1
L
0.40
0.60
.0118 BSC
aaa
0.20
.004
0°
8°
8°
0°
2.80
1.20
0
E1
E
D
5
6
3
1
2
ccc
C B A
B
5
6
e
e1
A2
A
A1
bbb
C A B
3X b
aaa C
3 SURF
0
3X L
L1
H
4
7
2.10
e1
1.90 BSC
.075 BSC
.0119
.0032
.111
.083
.048
.055
.119
.103
.0196
.0078
.0039
.044
.0004
.035
.040
.0236
.0158
1.02
0.20
0.50
2.64
3.04
1.40
1.12
0.10
0.10
1.90
[.075]
0.95
[.0375]
0.972
[.038]
2.742
[.1079]
0.802
[.031]
RECOMMENDED FOOTPRINT
3X
3X
NOT ES
1. DIMENSIONING AND T OLERANCING PER ASME Y14.5M-1994.
4 DATUM PLANE H IS LOCATED AT T HE MOLD PART ING LINE.
5 DATUM A AND B T O BE DET ERMINED AT DAT UM PLANE H.
6 DIMENSIONS D AND E1 ARE MEASURED AT DAT UM PLANE H.
2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.
3. CONT ROLLING DIMENSION: MILLIMET ER.
7 DIMENSION L IS T HE LEAD LENGTH FOR SOLDERING T O A SUBST RATE.
8. OUT LINE CONFORMS TO JEDEC OUT LINE T O-236AB.
F = IRLML6401
A
2001
A
27
Notes: This part marking information applies to devices produced after 02/26/2001
ASSEMBLY LOT CODE
LEAD-FREE
DATE CODE
E = IRLML6402
X = PART NUMBER CODE REFERENCE:
D = IRLML5103
C = IRLML6302
B = IRLML2803
A = IRLML2402
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
W = (27-52) IF PRECEDED BY A LETTER
Y
8
2008
3
2003
1
2001
YEAR
2002
2
5
2005
2004
4
2007
2006
7
6
2010
0
2009
9
YEAR
Y
C
03
WORK
WEEK
01
02
A
W
B
04
D
24
26
25
X
Z
Y
WORK
WEEK
W
H = IRLML5203
G = IRLML2502
K
H
G
F
E
D
C
B
2006
2003
2002
2005
2004
2008
2007
2010
2009
J
Y
51
29
28
30
C
B
D
50
X
I = IRLML0030
J = IRLML2030
L = IRLML0060
M = IRLML0040
K = IRLML0100
N = IRLML2060
P = IRLML9301
R = IRLML9303
Cu WIRE
HALOGEN FREE
PART NUMBER
52
Z
DATE CODE EXAMPLE:
YWW = 432 = DF
YWW = 503 = 5C
2018
2013
2011
2012
2015
2014
2017
2016
2020
2019
2018
2013
2011
2012
2015
2014
2017
2016
2020
2019
W = IRFML8244
V = IRLML6346
U = IRLML6344
T = IRLML6246
S = IRLML6244
Y = IRLML2246
X = IRLML2244
Z = IRFML9244
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package
8
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2014 International Rectifier
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April 24, 2014
IRLML2502PbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 )
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
8.3 ( .326 )
7.9 ( .312 )
1.32 ( .051 )
1.12 ( .045 )
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package
9
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2014 International Rectifier
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April 24, 2014
IRLML2502PbF
MS L1
(per JEDEC J-S TD-020D
††
)
RoHS compliant
Yes
Qualification information
†
Qualification level
Consumer
(per JEDEC JES D47F
††
guidelines)
Moisture Sensitivity Level
Micro3
™ (SOT-23)
† Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com/product-info/reliability
††
Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit
http://www.irf.com/whoto-call/
Revision History
Date
Comment
• Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 7.
• Added Qualification table -Qual level "Consumer" on page 9.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
4/24/2014