IRLML2502PbF-1 Product Datasheet

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background image

HEXFET

®

 Power MOSFET

D

S

G

3

1

2

IRLML2502PbF-1

Features

Benefits

Industry-standard pinout SOT-23 Package

Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques                        

Easier Manufacturing

RoHS Compliant, Halogen-Free

Environmentally Friendlier

MSL1, Industrial qualification

Increased Reliability

Micro3

™(SOT-23)

Form

Quantity

IRLML2502TRPbF-1

Micro3™ (SOT-23)

Tape and Reel

3000

IRLML2502TRPbF-1

Package Type

Standard Pack

 Orderable Part Number

Base Part  Number

Parameter

Max.

Units

V

DS

Drain- Source Voltage

20

V

I

D

 @ T

A

 = 25°C

Continuous Drain Current, V

GS

 @ 4.5V

4.2

I

D

 @ T

A

= 70°C

Continuous Drain Current, V

GS

 @ 4.5V

3.4

A

I

DM

Pulsed Drain Current 



33

P

@T

A

 = 25°C

Power  Dissipation

1.25

P

@T

A

 = 70°C

Power Dissipation

0.8

Linear Derating Factor

0.01

W/°C

V

GS

Gate-to-Source Voltage

 ± 12

V

T

J, 

T

STG

Junction and Storage Temperature Range

-55  to + 150

°C

Absolute Maximum Ratings

W

Parameter

Typ.

Max.

Units

R

θJA

Maximum Junction-to-Ambient

ƒ

75

100

°C/W

Thermal Resistance

V

DS

20

V

R

DS(on) max 

(@V

GS

 = 4.5V)

0.045

Q

g (typical)

8.0

nC

I

(@T

A

 = 25°C)

4.2

A

Ω

1

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IRLML2502PbF-1

2

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

 Repetitive rating;  pulse width limited by

     max. junction temperature. ( See fig. 11 )

Notes:

‚

 Pulse width ≤ 300μs; duty cycle ≤ 2%.

ƒ

  Surface mounted on FR-4 board,  t ≤  5sec.

S

D

G

Electrical Characteristics  @ T

J

 = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage

20

–––

–––

V

ΔV

(BR)DSS

/

ΔT

Breakdown Voltage Temp. Coefficient

–––

0.01

–––

V/°C

R

DS(on)

Static Drain-to-Source On-Resistance

–––

0.035

0.045

Ω

–––

0.050

0.080

V

GS(th)

Gate Threshold Voltage

0.60

–––

1.2

V

ΔV

GS(th)

Gate Threshold Voltage Coefficient

–––

 -3.2

–––

mV/°C

gfs

Forward Transconductance

5.8

–––

–––

S

I

DSS

Drain-to-Source Leakage Current

–––

–––

1.0

–––

–––

25

I

GSS

Gate-to-Source Forward Leakage

–––

–––

100

Gate-to-Source Reverse Leakage

–––

–––

-100

Q

g

Total Gate Charge 

–––

8.0

12

Q

gs

Gate-to-Source Charge

–––

1.8

2.7

Q

gd

Gate-to-Drain ("Miller") Charge

–––

1.7

2.6

t

d(on)

Turn-On Delay Time

–––

7.5

–––

t

r

Rise Time

–––

10

–––

t

d(off)

Turn-Off Delay Time

–––

54

–––

t

f

Fall Time

–––

26

–––

C

iss

Input Capacitance

–––

740

–––

C

oss

Output Capacitance

–––

90

–––

C

rss

Reverse Transfer Capacitance

–––

66

–––

Source-Drain Rating and  Characteristics

        Parameter

Min.

Typ.

Max.

Units

I

S

Continuous Source Current 

(Body Diode)

I

SM

Pulsed Source Current

(Body Diode)c

V

SD

Diode Forward Voltage

–––

–––

1.2

V

t

rr

Reverse Recovery Time

–––

16

24

ns

Q

rr

Reverse Recovery Charge

–––

8.6

13

nC

MOSFET symbol

nA

ns

A

pF

nC

V

DS

 = 10V

V

GS

 = 12V

V

GS

 = -12V

Conditions

V

GS

 = 0V, I

D

 = 250uA

Reference to 25°C, I

D

 = 1.0mA 

V

GS

 = 4.5V, I

D

 = 4.2A d

–––

–––

33

–––

–––

1.3

Conditions

R

= 10

Ω d

ƒ = 1.0MHz

T

J

 = 25°C, I

F

 = 1.3A

di/dt = 100A/μs d

T

J

 = 25°C, I

S

 = 1.3A, V

GS

 = 0V d

showing  the
integral reverse

p-n junction diode.

R

= 6

Ω

V

DS

 = 10V, I

D

 = 4.0A

V

DS

 = 16V, V

GS

 = 0V, T

J

 = 70°C

μA

V

GS

 = 5.0V d

I

D

 = 1.0A

V

GS

 = 0V

V

DS

 = 15V

I

D

 = 4.0A

V

DS

 = V

GS

, I

D

 = 250μA

V

GS

 = 2.5V, I

D

 = 3.6A d

V

DS

 = 16V, V

GS

 = 0V

V

DD

 = 10V

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IRLML2502PbF-1

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Fig 4.  Normalized On-Resistance

Vs. Temperature

Fig 2.  Typical Output Characteristics

Fig 1.  Typical Output Characteristics

Fig 3.  Typical Transfer Characteristics

-60 -40 -20

0

20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T  , Junction Temperature (  C)

R            , Drain-to-Source On Resistance

(Normalized)

J

D

S

(on)

°

V

=

I =

GS

D

4.5V

4.0A

 1

 10

 100

0.1

 1

 10

 100

20μs PULSE WIDTH

T  = 25 C

J

°

TOP

BOTTOM

VGS

7.00V

5.00V

4.50V

3.50V

3.00V

2.70V

2.50V

2.25V

V     , Drain-to-Source Voltage (V)

I   ,  D

rain-to-S

ource C

urrent (A

)

DS

D

2.25V

 1

 10

 100

0.1

 1

 10

 100

20μs PULSE WIDTH

T  = 150 C

J

°

TOP

BOTTOM

VGS

7.00V

5.00V

4.50V

3.50V

3.00V

2.70V

2.50V

2.25V

V     , Drain-to-Source Voltage (V)

I   ,  D

rain-to-S

ource C

urrent (A

)

DS

D

2.25V

 10

 100

2.0

2.4

2.8

3.2

3.6

4.0

V      = 15V
20μs PULSE WIDTH

DS

V     , Gate-to-Source Voltage (V)

I   ,  D

rain-to-S

ource C

urrent (A

)

GS

D

T  = 25  C

J

°

T  = 150  C

J

°

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IRLML2502PbF-1

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Fig 8.  Maximum Safe Operating Area

Fig 6.  Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5.  Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7.  Typical Source-Drain Diode

Forward Voltage

0

4

8

12

16

0

2

4

6

8

10

Q   , Total Gate Charge (nC)

V     , Gate-to-Source Voltage (V)

G

GS

I =

D

4.0A

V

= 10V

DS

0.1

 1

 10

 100

0.4

0.6

0.8

1.0

1.2

1.4

V     ,Source-to-Drain Voltage (V)

I     , Reverse Drain Current (A)

SD

SD

V      = 0 V 

GS

T  = 25  C

J

°

T  = 150  C

J

°

0.1

 1

 10

 100

 1000

0.1

 1

 10

 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

 Single Pulse

 T

 T

= 150  C

= 25  C

°

°

J

A

V     , Drain-to-Source Voltage (V)

I   , Drain Current (A)I   , Drain Current (A)

DS

D

10us

100us

1ms

10ms

 1

 10

 100

0

200

400

600

800

1000

1200

V     , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V

C

C

C

=

=

=

=

0V,

C

C

C

f = 1MHz

+ C

+ C

C      SHORTED

GS
iss

gs

gd ,

ds

rss

gd

oss

ds

gd

C

rss

C

oss

C

iss

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Fig 10.  Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9.  Maximum Drain Current Vs.

Case Temperature

25

50

75

100

125

150

0.0

1.0

2.0

3.0

4.0

T   , Case Temperature (  C)

I   , Drain Current (A)

°

C

D

0.1

 1

 10

 100

 1000

0.00001

0.0001

0.001

0.01

0.1

 1

 10

Notes:

1. Duty factor D = t   / t
2. Peak T = P

x  Z

+ T

1

2

J

DM

thJA

A

P

t

t

DM

1

2

t  , Rectangular Pulse Duration (sec)

Ther

m

al

 R

esponse

(Z

        )

1

th

JA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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IRLML2502PbF-1

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                 October 28, 2014

Fig 12.   On-Resistance Vs. Drain Current

Fig 11.   On-Resistance Vs. Gate Voltage

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0

VGS, Gate -to -Source Voltage  ( V )

0.02

0.03

0.04

0.05

R

D

S

(o

n)

 ,

  D

ra

in

-t

-S

ou

rc

V

ol

ta

ge

 (

 Ω

 )

Id = 4.0A

0

10

20

30

40

iD , Drain Current ( A )

0.00

0.10

0.20

0.30

R

D

S

 (

 o

, D

ra

in

-t

o-

S

ou

rc

O

R

es

is

ta

nc

( Ω

 )

VGS = 4.5V

VGS = 2.5V

-75 -50 -25

0

25

50

75 100 125 150

TJ , Temperature ( °C )

0.5

0.7

0.9

1.1

1.3

V

G

S

(t

h)

,  

G

at

th

re

sh

ol

V

ol

ta

ge

 (

V

)

ID = 50μA

ID = 250μA

Fig 13.   Threshold Voltage Vs. Temperature

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IRLML2502PbF-1

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Micro3 (SOT-23 / TO-236AB)  Part Marking Information

Micro3 (SOT-23) (Lead-Free) Package Outline

Dimensions are shown in millimeters (inches)

0.08

0.88

0.01

0.89

0.95 BSC

MILLIME TERS
MIN

e

E

E1

D

L

A

A1
A2

c

M

O

B

S

Y

MIN

MAX

MAX

.036

.0375 BSC

DIME NSIONS

INCHES

b

0.30

bbb

0.15

.008

ccc

.006

0.25 BS C

L1

L

0.40

0.60

.0118 BSC

aaa

0.20

.004

2.80

1.20

0

E1

E

D

5

6

3

1

2

ccc

C B A

B

5

6

e

e1

A2

A

A1

bbb

C A B

3X b

aaa C

3 S URF

0

3X L

L1

H

4

7

2.10

e1

1.90 BSC

.075 BSC

.0119
.0032

.111
.083
.048

.055

.119
.103

.0196
.0078

.0039

.044

.0004

.035

.040

.0236

.0158

1.02

0.20

0.50

2.64

3.04

1.40

1.12
0.10

0.10

1.90

[.075]

0.95

[.0375]

0.972

[.038]

2.742

[.1079]

     0.802

     [.031]

RECOMMENDED FOOTPRINT

3X

3X

NOT ES

1.  DIMENSIONING AND T OLERANCING PER ASME Y14.5M-1994.

4    DATUM PLANE  H IS LOCATED AT  T HE MOLD  PART ING LINE.
5   DATUM A AND B T O BE DET ERMINED AT  DAT UM PLANE H.
6   DIMENSIONS D AND E1 ARE MEASURED AT  DAT UM PLANE H.

2.  DIMENSIONS  ARE SHOWN  IN MILLIMETERS  AND INCHES.
3.  CONT ROLLING DIMENSION: MILLIMET ER.

7   DIMENSION L IS T HE LEAD LENGTH FOR SOLDERING T O A SUBST RATE.
8.  OUT LINE CONFORMS TO JEDEC OUT LINE T O-236AB.

Note: For the most current drawing please refer to IR website at

 http://www.irf.com/package/

F =  IRLML6401

A

A

27

LOT CODE

LEAD FREE

DATE CODE

E =  IRLML6402

X =  PART  NUMBER CODE REFERENCE:

D =  IRLML5103

C =  IRLML6302

B =  IRLML2803

A =  IRLML2402

W =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

W =  (27-52) IF PRECEDED BY A LETTER

Y

8

3

1
2

5

4

7

6

0

9

Y

C

03

WORK

WEEK

01
02

A

W

B

04

D

24

26

25

X

Z

Y

WORK

WEEK

W

H =  IRLML5203

G =  IRLML2502

K

H

G

F

E

D

C

B

J

Y

51

29

28

30

C

B

D

50

X

52

Z

Note: A line above the work week

(as shown here) indicates Lead - Free.

I  =  IRLML0030
J =  IRLML2030

L =  IRLML0060
M =  IRLML0040

K =  IRLML0100

N =  IRLML2060
P =  IRLML9301
R =  IRLML9303

Cu WIRE

HALOGEN FREE

PART NUMBER

X =  IRLML2244

W =  IRFML8244

V =  IRLML6346

U =  IRLML6344

T =  IRLML6246

S =  IRLML6244

Z =  IRFML9244

Y =  IRLML2246

INDUSTRIAL VERSION

2007

YEAR

2003

2001
2002

2005

2004

2006

2007

2009

2008

2010

2003

2001

YEAR

2002

2005

2004

2006

2009

2008

2010

2017

2013

2011
2012

2015

2014

2016

2017

2019

2018

2020

2013

2011
2012

2015

2014

2016

2019

2018

2020

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                 October 28, 2014

Micro3™ Tape & Reel Information 

(Dimensions are shown in millimeters (inches))

2.05 ( .080 )
1.95 ( .077 )

TR

FEED DIRECTION

4.1 ( .161 )
3.9 ( .154 )

1.6 ( .062 )
1.5 ( .060 )

1.85 ( .072 )
1.65 ( .065 )

3.55 ( .139 )
3.45 ( .136 )

1.1 ( .043 )
0.9 ( .036 )

4.1 ( .161 )
3.9 ( .154 )

0.35 ( .013 )
0.25 ( .010 )

8.3 ( .326 )
7.9 ( .312 )

1.32 ( .051 )
1.12 ( .045 )

9.90 ( .390 )
8.40 ( .331 )

  178.00
( 7.008 )
    MAX.

NOTES:
1.  CONTROLLING DIMENSION : MILLIMETER.
2.  OUTLINE CONFORMS TO EIA-481 & EIA-541.
     

Note: For the most current drawing please refer to IR website at 

: http://www.irf.com/package/

†     Qualification standards can be found at International Rectifier’s web site:

 

http://www.irf.com/product-info/reliability

††   

Applicable version of JEDEC standard at the time of product release

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit 

http://www.irf.com/whoto-call/

MS L1

(per JEDEC J-S TD-020D

†† 

)

RoHS compliant

Yes

Qualification information

Qualification level

Industrial

(per JEDEC JES D47F

††

 guidelines)

Moisture Sensitivity Level

Micro3

™ (SOT-23)

Revision History

Date

Comment

10/28/2014

• Updated partmarking to reflect Industrial partmarking on page 7. 

Maker
Infineon Technologies