IRLML0060PbF Product Datasheet

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IRLML0060TRPbF 

 

2016-12-20 

Absolute Maximum Ratings 

Symbol Parameter 

Max. 

Units 

V

DS 

Drain-to-Source Voltage 

60 

V  

I

D

 @ T

A

 = 25°C 

Continuous Drain Current, V

GS

 @ 10V  

2.7 

 

I

D

 @ T

A

 = 70°C 

Continuous Drain Current, V

GS

 @  10V  

2.1 

I

DM 

Pulsed Drain Current  

11 

P

D

 @T

A

= 25°C 

Maximum Power Dissipation   

1.25 

W  

P

D

 @T

A

= 70°C 

Maximum Power Dissipation   

0.80 

  

Linear Derating Factor 

0.01 

mW/°C 

V

GS 

Gate-to-Source Voltage 

 ± 16 

 

T

J  

Operating Junction and 

°C 

T

STG 

Storage Temperature Range 

-55  to + 150   

Micro 3™ (SOT-23) 

IRLML0060TRPbF 

G D S 

Gate Drain Source 

Base part number 

Package Type 

Standard Pack 

Orderable Part Number   

Form 

Quantity 

IRLML0060TRPbF 

Micro 3™ (SOT-23) 

Tape and Reel  

3000 

IRLML0060TRPbF 

HEXFET

® 

Power MOSFET 

Thermal Resistance  

Symbol Parameter 

Typ. 

Max. 

Units 

R

JA

  

Junction-to-Ambient  ––– 

100 

R

JA

  

Junction-to-Ambient (t < 10s)  ––– 

99 

°C/W    

V

DSS 

60 

V

GS 

±16 

R

DS(on) 

max 

(@ V

GS 

= 10V) 

92 

m



R

DS(on) 

max 

(@ V

GS 

= 4.5V) 

116 

m



Applications  
 Load/System Switch 

Features 

 

Benefits 

Industry-Standard Pinout     

Multi-Vendor Compatibility 

Compatible with Existing Surface Mount Techniques                                              

results in  Easier Manufacturing 

RoHS Compliant Containing no Lead, no Bromide and no Halogen  



Environmentally Friendlier 

MSL1 

 

Increased Reliability 

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IRLML0060TRPbF 

 

2016-12-20 

Notes:

  Repetitive rating;  pulse width limited by max. junction temperature.  

 Pulse width 

400µs; duty cycle  2%. 



Surface mounted on 1 in square Cu board 



Refer to application note #AN-994. 

Electrical Characteristics @ T

= 25°C (unless otherwise specified) 

  

Parameter Min. 

Typ. 

Max. 

Units 

Conditions 

V

(BR)DSS 

Drain-to-Source Breakdown Voltage 

60 

–––  ––– 

V  V

GS

 = 0V, I

D

 = 250µA 

V

(BR)DSS

/

T

J  

Breakdown Voltage Temp. Coefficient 

–––  0.06  –––  V/°C  Reference to 25°C, I

D

 = 1mA  

R

DS(on) 

    

Static Drain-to-Source On-Resistance     

––– 98 116 

m



V

GS

 = 4.5V, I

D

 = 2.2A  

––– 78  92 

V

GS

 = 10V, I

D

 = 2.7A  

V

GS(th) 

Gate Threshold Voltage 

1.0 

––– 

2.5 

V  V

DS

 = V

GS

, I

D

 = 25µA 

I

DSS 

  

Drain-to-Source Leakage Current   

––– –––  20 

µA 

V

DS

 = 60V, V

GS

 = 0V 

––– ––– 250 

V

DS

 = 60V,V

GS

 = 0V,T

J

 = 125°C 

I

GSS 

   

Gate-to-Source Forward Leakage 

––– 

–––  100 

nA  

V

GS

 = 16V 

Gate-to-Source Reverse Leakage 

––– 

–––   -100 

V

GS

 = -16V 

R

 Internal Gate Resistance 

––– 

1.6 

––– 

   

gfs 

Forward Trans conductance 

7.6 

–––  ––– 

S  V

DS

 = 25V, I

D

 = 2.7A 

Q

Total Gate Charge  

––– 

2.5 

––– 

I

D

 = 2.7A 

Q

gs 

Gate-to-Source Charge 

––– 

0.7 

––– 

V

DS

 = 30V 

Q

gd 

Gate-to-Drain (‘Miller’) Charge 

––– 

1.3 

––– 

V

GS

 = 4.5V  

t

d(on) 

Turn-On Delay Time 

––– 

5.4 

––– 

ns  

V

DD

 = 30V 

t

Rise Time 

––– 

6.3 

––– 

I

D

 = 1.0A 

t

d(off) 

Turn-Off Delay Time 

––– 

6.8 

––– 

R

= 6.8



t

Fall Time 

––– 

4.2 

––– 

V

GS

 = 4.5V  

C

iss 

Input Capacitance 

––– 

290  ––– 

pF  

V

GS

 = 0V 

C

oss 

Output Capacitance 

––– 

37 

––– 

V

DS

 = 25V 

C

rss 

Reverse Transfer Capacitance 

––– 

21 

––– 

ƒ = 1.0MHz 

  nC  

Source-Drain Ratings and Characteristics 

  

        Parameter 

Min.  Typ.  Max.  Units 

Conditions 

I

  

Continuous Source Current  

––– ––– 1.6 

MOSFET symbol 

(Body Diode) 

showing  the 

I

SM 

  

Pulsed Source Current 

––– –––  11 

integral reverse 

(Body Diode)

p-n junction diode. 

V

SD 

Diode Forward Voltage 

––– 

––– 

1.3 

V  T

J

 = 25°C,I

= 2.7A,V

GS

 = 0V 

t

rr  

Reverse Recovery Time  

––– 

14 

21 

ns   T

J

 = 25°C ,V

R

 = 30V, I

F

 = 1.6A 

Q

rr  

Reverse Recovery Charge  

––– 

13 

20 

nC    di/dt = 100A/µs 

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IRLML0060TRPbF 

 

2016-12-20 

Fig. 2 Typical Output Characteristics 

Fig. 3 

Typical Transfer Characteristics

 

 

Fig. 4 Normalized On-Resistance 

vs. Temperature 

Fig. 1 Typical Output Characteristics 

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

I D

, D

ra

in

-t

o-

S

ou

rc

e

 C

u

rr

en

t (

A

)

VGS

TOP           10V

6.0V

4.5V

4.0V

3.5V

3.3V

3.0V

BOTTOM

2.8V

60µs PULSE WIDTH

Tj = 25°C

2.8V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

I D

, D

ra

in

-t

o-

S

ou

rc

e

 C

u

rr

en

t (

A

)

2.8V

60µs PULSE WIDTH

Tj = 150°C

VGS

TOP           10V

6.0V

4.5V

4.0V

3.5V

3.3V

3.0V

BOTTOM

2.8V

2

3

4

5

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 

(A

)

TJ = 25°C

TJ = 150°C

VDS = 25V

60µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

R

D

S

(o

n)

 ,

 D

ra

in

-t

o-

S

ou

rc

O

R

es

is

ta

nc

   

   

   

   

   

   

   

 (

N

or

m

al

iz

ed

)

ID = 2.7A

VGS = 10V

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IRLML0060TRPbF 

 

2016-12-20 

Fig 5.  Typical Capacitance vs.  
 

      Drain-to-Source Voltage

 

 

Fig 8.  Maximum Safe Operating Area  

Fig. 7 Typical Source-to-Drain Diode 

 Forward Voltage 

Fig 6.  Typical Gate Charge vs. 
 

      Gate-to-Source Voltage

 

 

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

C

, C

ap

ac

ita

nc

(p

F

)

VGS   = 0V,       f = 1 MHZ

Ciss    = Cgs + Cgd,  C ds SHORTED
Crss    = Cgd 
Coss   = Cds + Cgd

Coss

Crss

Ciss

0

1

2

3

4

5

6

7

 QG,  Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

V

G

S

, G

at

e-

to

-S

ou

rc

V

ol

ta

ge

 (

V

)

VDS= 48V

VDS= 30V

VDS= 12V

ID= 2.7A

0.2

0.4

0.6

0.8

1.0

1.2

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

I S

D

, R

ev

er

se

 D

ra

in

 C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VGS = 0V

0

1

10

100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

I D

,  

D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

OPERATION IN THIS AREA 

LIMITED BY R DS(on)

TA = 25°C

Tj = 150°C

Single Pulse

100µsec

1msec

10msec

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IRLML0060TRPbF 

 

2016-12-20 

Fig 11.  Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

Fig 9.  Maximum Drain Current vs. Case Temperature 

Fig 10a.  Switching Time Test Circuit 

Fig 10b.  Switching Time Waveforms 

25

50

75

100

125

150

 TA , Ambient Temperature (°C)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

I D

,   

D

ra

in

 C

ur

re

nt

 (

A

)

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

10

100

t1 , Rectangular Pulse Duration (sec)

0.01

0.1

1

10

100

1000

T

he

rm

al

 R

es

po

ns

Z

 th

JA

 )

 °

C

/W

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + TA

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IRLML0060TRPbF 

 

2016-12-20 

Fig 13.   Typical On-Resistance Vs.  

Drain Current 

Fig 14a.  Basic Gate Charge Waveform 

Fig 12.   Typical On-Resistance Vs.  

Gate Voltage 

Fig 14b.  Gate Charge Test Circuit  

3

4

5

6

7

8

9

10

VGS, Gate -to -Source Voltage  (V)

0

100

200

300

400

R

D

S

(o

n

),

  D

ra

in

-t

o

 -

S

o

ur

ce

 O

R

e

si

st

a

n

ce

 (

m

)

ID = 2.7A

TJ = 25°C

TJ = 125°C

0

2

4

6

8

10

12

ID, Drain Current (A)

50

75

100

125

150

R

D

S

(o

n)

,  

D

ra

in

-t

-S

ou

rc

O

R

es

is

ta

nc

(

m

)

Vgs = 10V 

Vgs = 4.5V 

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IRLML0060TRPbF 

 

2016-12-20 

Fig 15.   Typical Threshold Voltage Vs.  

Junction Temperature 

Fig 16.   Typical Power Vs. Time 

-75 -50 -25

0

25

50

75 100 125 150

TJ , Temperature ( °C )

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

V

G

S

(t

h)

,  G

at

th

re

sh

ol

V

ol

ta

ge

 (

V

)

ID = 25µA

ID = 250µA

1

10

100

1000

10000

100000

Time (sec)

0

20

40

60

80

100

P

ow

er

 (

W

)

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IRLML0060TRPbF 

 

2016-12-20 

 

Note: For the most current drawing please refer to Infineon’s web site 

www.infineon.com

 

 

Micro3™ (SOT-23/TO-236AB) Part Marking Information  

Micro3™ (SOT-23) Package Outline (Dimensions are shown in millimeters (inches)) 

e

E1

E

D

A

B

0.15 [0.006]

e1

1

2

3

M C B A

5

6

6

5

NOTES:

1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994

2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES 
  NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS 
  OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.

NOTES:

b

A1

3X

A

A2

A

B

C

M

0.20 [0.008]

0.10 [0.004] C

C

3X L

c

L2

H 4

L1

 7

0.972

1.900

Recommended Footprint

0.802

0.950

2.742

0.89

1.12

SYMBOL

MAX

MIN

A1

b

0.01

0.10

c

0.30

0.50

D

0.08

0.20

E

2.80

3.04

E1

2.10

2.64

e

1.20

1.40

A

0.95

BSC

L

0.40

0.60

0

8

MILLIMETERS

A2

0.88

1.02

e1

1.90

BSC

REF

0.54

L1

BSC

0.25

L2

0.010

BSC

0.021

REF

BSC 

0.075

0.040

0.035

INCHES

8

0

0.024

0.016

BSC

0.037

0.055

0.047

0.104

0.083

0.120

0.110

0.008

0.003

0.020

0.012

0.004

0.0004

MIN

MAX

0.044

0.035

DIMENSIONS

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IRLML0060TRPbF 

 

2016-12-20 

Micro3™

Tape & Reel Information (Dimensions are shown in millimeters (inches)) 

Note: For the most current drawing please refer to Infineon’s web site 

www.infineon.com

 

 

2.05 ( .080 )
1.95 ( .077 )

TR

FEED DIRECTION

4.1 ( .161 )
3.9 ( .154 )

1.6 ( .062 )
1.5 ( .060 )

1.85 ( .072 )
1.65 ( .065 )

3.55 ( .139 )
3.45 ( .136 )

1.1 ( .043 )
0.9 ( .036 )

4.1 ( .161 )
3.9 ( .154 )

0.35 ( .013 )
0.25 ( .010 )

8.3 ( .326 )
7.9 ( .312 )

1.32 ( .051 )
1.12 ( .045 )

9.90 ( .390 )
8.40 ( .331 )

  178.00
( 7.008 )
    MAX.

NOTES:
1.  CONTROLLING DIMENSION : MILLIMETER.
2.  OUTLINE CONFORMS TO EIA-481 & EIA-541.
     

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IRLML0060TRPbF 

10 

 

2016-12-20 

 

Revision History  

Date Comments 

12/20/16 



Changed datasheet with Infineon logo - all pages. 



Removed typo “Industrial”  on Feature and Benefits Table on page1. 



Corrected typo for Igss test condition from “V

GS 

= 20V” to “V

GS 

= 16V” on page 2. 

Qualification Information 

Qualification Level  

Consumer 

 (per JEDEC JESD47F) 

† 

Moisture Sensitivity Level    

Micro3™ (SOT-23) 

MSL1 

 (per JEDEC J-STD-020D) 

† 

RoHS Compliant 

Yes 

†   Applicable version of JEDEC standard at the time of product release. 

Trademarks of Infineon Technologies AG 

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, 

CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, 

GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, 

OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID 

FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

 

Trademarks updated November 2015 

 

Other Trademarks 

All referenced product or service names and trademarks are the property of their respective owners. 

 Edition 2016-04-19 
Published by 
Infineon Technologies AG 
81726 Munich, Germany 
  
© 2016 Infineon Technologies AG. 

All Rights Reserved. 

  
Do you have a question about this 

document? 

Email: 

erratum@infineon.com

 

 

Document reference 
ifx1 

IMPORTANT NOTICE 

The information given in this document shall in no 

event be regarded as a guarantee of conditions or 

characteristics  (“Beschaffenheitsgarantie”) . 

  

With respect to any examples, hints or any typical 

values stated herein and/or any information 

regarding the application of the product, Infineon 

Technologies hereby disclaims any and all 

warranties and liabilities of any kind, including 

without limitation warranties of non-infringement 

of intellectual property rights of any third party. 

  

In addition, any information given in this 

document  is subject to customer’s compliance 

with its obligations stated in this document and 

any applicable legal requirements, norms and 

standards concerning customer’s products and 

any use of the product of Infineon Technologies in 

customer’s applications. 

  

The data contained in this document is exclusively 

intended for technically trained staff. It is the 

responsibility of customer’s technical 

departments to evaluate the suitability of the 

product for the intended application and the 

completeness of the product information given in 

this document with respect to such application. 

  

For further information on the product, technology, 

delivery terms and conditions and prices please 

contact your nearest Infineon Technologies office 

(

www.infineon.com

). 

 

 Please note that this product is not qualified 

according to the AEC Q100 or AEC Q101 documents 

of the Automotive Electronics Council.  

WARNINGS 

 Due to technical requirements products may 

contain dangerous substances. For information on 

the types in question please contact your nearest 

Infineon Technologies office.  

 

Except as otherwise explicitly approved by Infineon 

Technologies in a written document signed by 

authorized representatives of Infineon 

Technologies,  Infineon Technologies’ products 

may  not be used in any applications where a 

failure of the product or any consequences of the 

use thereof can reasonably be expected to result in 

personal injury.  

  

  

  

Maker
Infineon Technologies