IRGS10B60KDPBF Datasheet

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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE

Features

01/07/13

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10μs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free

Benefits

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1

• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.

Absolute Maximum Ratings

             

 Parameter

Max.

Units

V

CES

Collector-to-Emitter Voltage

600

V

I

C

 @ T

C

 = 25°C

Continuous Collector Current

35

I

C

 @ T

C

 = 100°C

Continuous Collector Current

19

I

CM

Pulsed Collector Current

44

I

LM

Clamped Inductive Load Current 

„

44

A

I

F

 @ T

C

 = 25°C

Diode Continuous Forward Current

35

I

F

 @ T

C

 = 100°C

Diode Continuous Forward Current

19

I

FM

Diode Maximum Forward Current

44

V

GE

Gate-to-Emitter Voltage

± 20

V

P

D

 @ T

C

 = 25°C

Maximum Power Dissipation

156

P

D

 @ T

C

 = 100°C

Maximum Power Dissipation

62

T

J

Operating Junction and

-55  to +150

T

STG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

W

Thermal Resistance

             

 Parameter

Min.

Typ.

Max.

Units

R

θJC

Junction-to-Case - IGBT

–––

–––

0.8

R

θJC

Junction-to-Case - Diode

–––

–––

3.4

R

θCS

Case-to-Sink, flat, greased surface

–––

0.50

–––

°C/W

R

θJA

Junction-to-Ambient, typical socket mount



–––

–––

62

R

θJA

Junction-to-Ambient (PCB Mount, steady state)

‚

–––

–––

40

Wt

Weight

–––

1.44

–––

g

IRGB10B60KDPbF
IRGS10B60KDPbF

IRGSL10B60KDPbF

E

G

n-channel

C

V

CES

 = 600V

I

C

 = 19A, T

C

=100°C

t

sc

 > 10μs, T

J

=150°C

V

CE(on)

 typ. = 1.8V

D

2

Pak

IRGS10B60KDPbF

TO-220AB

IRGB10B60KDPbF

TO-262

IRGSL10B60KDPbF

PD - 94925C

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                                Parameter

Min. Typ. Max. Units

       Conditions

V

(BR)CES

Collector-to-Emitter Breakdown Voltage

600 ––– –––

V

V

GE

 = 0V, I

C

 = 500μA

ΔV

(BR)CES

/

ΔT

J

Temperature Coeff. of Breakdown Voltage

–––

0.3

––– V/°C

V

GE

 = 0V, I

C

 = 1.0mA, (25°C-150°C)

V

CE(on)

Collector-to-Emitter Saturation Voltage

1.5 1.80 2.20

I

C

 = 10A, V

GE

 = 15V

––– 2.20 2.50

V

I

C

 = 10A, V

GE

 = 15V       T

J

 = 150°C

V

GE(th)

Gate Threshold Voltage

3.5

4.5

5.5

V

V

CE

 = V

GE

, I

C

 = 250μA

Δ

V

GE(th)

/

Δ

T

J

Temperature Coeff. of Threshold Voltage –––

-10

––– mV/°C V

CE

 = V

GE

, I

C

 = 1.0mA, (25°C-150°C)

g

fe

Forward Transconductance

–––

7.0

–––

S

V

CE

 = 50V, I

C

 = 10A, PW=80μs

I

CES

Zero Gate Voltage Collector Current

–––

3.0

150

μA

V

GE

 = 0V, V

CE

 = 600V

––– 300 700

V

GE

 = 0V, V

CE

 = 600V, T

J

 = 150°C

V

FM

Diode Forward Voltage Drop

––– 1.30 1.45

I

C

 = 10A

––– 1.30 1.45

V

I

C

 = 10A       T

J

 = 150°C

I

GES

Gate-to-Emitter Leakage Current

––– ––– ±100

nA

V

GE

 = ±20V

Electrical Characteristics @ T

J

 = 25°C (unless otherwise specified)

Ref.Fig.

5, 6,7
9,10,11
9,10,11
12

8

                                Parameter

Min. Typ. Max. Units

       Conditions

Qg

Total Gate Charge (turn-on)

–––

38

–––

I

C

 = 10A

Qge

Gate - Emitter Charge (turn-on)

–––

4.3

–––

nC

V

CC

 = 400V

Qgc

Gate - Collector Charge (turn-on)

––– 16.3 –––

V

GE

 = 15V

E

on

Turn-On Switching Loss

––– 140

247

μJ

I

C

 = 10A, V

CC

 = 400V

E

off

Turn-Off Switching Loss

––– 250

360

V

GE

 = 15V,R

= 47

Ω,  L = 200μH

E

tot

Total Switching Loss

––– 390

607

Ls = 150nH

     T

J

 = 25°C

 ƒ

t

d(on)

Turn-On Delay Time

–––

30

39

I

C

 = 10A, V

CC

 = 400V

t

r

Rise Time

–––

20

29

V

GE

 = 15V, R

G

 = 47

Ω, L = 200μH

t

d(off)

Turn-Off Delay Time

––– 230

262

ns

Ls = 150nH, T

J

 = 25°C

t

f

Fall Time

–––

23

32

E

on

Turn-On Switching Loss

––– 230

340

I

C

 = 10A, V

CC

 = 400V

E

off

Turn-Off Switching Loss

––– 350

464

μJ

V

GE

 = 15V,R

= 47

Ω,  L = 200μH

E

tot

Total Switching Loss

––– 580

804

Ls = 150nH

     T

J

 = 150°C 

ƒ

t

d(on)

Turn-On Delay Time

–––

30

39

I

C

 = 10A, V

CC

 = 400V

t

r

Rise Time

–––

20

28

V

GE

 = 15V, R

G

 = 47

Ω, L = 200μH

t

d(off)

Turn-Off Delay Time

––– 250

274

ns

Ls = 150nH, T

J

 = 150°C

t

f

Fall Time

–––

26

34

C

ies

Input Capacitance

––– 620

–––

V

GE

 = 0V

C

oes

Output Capacitance

–––

62

–––

pF

V

CC

 = 30V

C

res

Reverse Transfer Capacitance

–––

22

–––

f = 1.0MHz
T

J

 = 150°C, I

C

 = 44A, Vp =600V

V

CC

 = 500V, V

GE

 = +15V to 0V,

μs

T

J

 = 150°C, Vp =600V,R

G

 = 47

Ω

V

CC

 = 360V, V

GE

 = +15V to 0V

Erec

Reverse Recovery energy of the diode

––– 245

330

μJ

T

J

 = 150°C

t

rr

Diode Reverse Recovery time

–––

90

105

ns

V

CC

 = 400V, I

F

 = 10A, L = 200μH

I

rr

Diode Peak Reverse Recovery Current

–––

19

22

A

V

GE

 = 15V,R

= 47

Ω, Ls = 150nH

Switching Characteristics @ T

J

 = 25°C (unless otherwise specified)

RBSOA

Reverse Bias Safe Operting Area

FULL SQUARE

SCSOA

Short Circuit Safe Operting Area

10

––– –––

Ref.Fig.

CT1

CT4

CT4

13,15

WF1WF2

4

CT2

CT3

WF4

17,18,19

20, 21

CT4,WF3

CT4

R

G

 = 47

Ω

14, 16

CT4

WF1
WF2

Note 

 to „ are on page 15

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Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

Fig. 2 - Power  Dissipation vs. Case

Temperature

Fig. 3 - Forward SOA

T

C

 = 25°C; T

 150°C

Fig. 4 - Reverse Bias SOA

T

J

 = 150°C; V

GE 

=15V

0

20

40

60

80 100 120 140 160

 TC (°C)

0

20

40

60

80

100

120

140

160

180

P

to

t (

W

)

10

100

1000

VCE (V)

0

1

10

100

I C

 A

)

1

10

100

1000

10000

 VCE (V)

0.1

1

10

100

I C

 (

A

)

10 μs

100 μs

1ms

DC

20 μs

0

20

40

60

80 100 120 140 160

 TC (°C)

0

5

10

15

20

25

30

35

40

I C

 (

A

)

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Fig. 6 - Typ. IGBT Output Characteristics

T

J

 = 25°C; tp = 80μs

Fig. 5 - Typ. IGBT Output Characteristics

T

J

 = -40°C; tp = 80μs

Fig. 8 - Typ. Diode Forward Characteristics

 tp = 80μs

Fig. 7 - Typ. IGBT Output Characteristics

T

J

 = 150°C; tp = 80μs

0

1

2

3

4

5

6

 VCE (V)

0

5

10

15

20

25

30

35

40

I C

E

 (

A

)

VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

0

1

2

3

4

5

6

 VCE (V)

0

5

10

15

20

25

30

35

40

I C

E

 (

A

)

VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

 VF (V)

0

5

10

15

20

25

30

35

40

I F

 (

A

)

-40°C
25°C
150°C

0

1

2

3

4

5

6

 VCE (V)

0

5

10

15

20

25

30

35

40

I C

E

 (

A

)

VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

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Fig. 10 - Typical V

CE 

vs. V

GE

T

J

 = 25°C

Fig. 9 - Typical V

CE 

vs. V

GE

T

J

 = -40°C

Fig. 11 - Typical V

CE 

vs. V

GE

T

J

 = 150°C

Fig. 12 - Typ. Transfer Characteristics

V

CE

 = 50V; tp = 10μs

5

10

15

20

 VGE (V)

0

2

4

6

8

10

12

14

16

18

20

V

C

E

 (

V

)

ICE = 5.0A
ICE = 10A
ICE = 15A

5

10

15

20

 VGE (V)

0

2

4

6

8

10

12

14

16

18

20

V

C

E

 (

V

)

ICE = 5.0A
ICE = 10A
ICE = 15A

0

5

10

15

20

 VGE (V)

0

10

20

30

40

50

60

70

80

I C

E

 (

A

)

TJ = 25°C
TJ = 150°C

TJ = 150°C

TJ = 25°C

5

10

15

20

 VGE (V)

0

2

4

6

8

10

12

14

16

18

20

V

C

E

 (

V

)

ICE = 5.0A
ICE = 10A
ICE = 15A

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Fig. 14 - Typ. Switching Time vs. I

C

T

J

 = 150°C; L=200μH; V

CE

= 400V

R

G

= 47

Ω; V

GE

= 15V

Fig. 13 - Typ. Energy Loss vs. I

C

T

J

 = 150°C; L=200μH; V

CE

= 400V

R

G

= 47

Ω; V

GE

= 15V

Fig. 16 - Typ. Switching Time vs. R

G

T

J

 = 150°C; L=200μH; V

CE

= 400V

I

CE

= 10A; V

GE

= 15V

Fig. 15 - Typ. Energy Loss vs. R

G

T

J

 = 150°C; L=200μH; V

CE

= 400V

I

CE

= 10A; V

GE

= 15V

0

50

100

150

RG (Ω)

0

50

100

150

200

250

300

350

400

450

500

E

ne

rg

J)

EON

EOFF

0

5

10

15

20

25

 IC (A)

0

100

200

300

400

500

600

700

800

E

ne

rg

J)

EOFF

EON

0

5

10

15

20

25

IC (A)

10

100

1000

S

w

ic

hi

ng

 T

im

(n

s)

tR

tdOFF

tF

tdON

0

50

100

150

RG (Ω)

10

100

1000

S

w

ic

hi

ng

 T

im

(n

s)

tR

tdOFF

tF

tdON

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Fig. 17 - Typical Diode I

RR 

vs. I

F

T

J

 = 150°C

Fig. 18 - Typical Diode I

RR 

vs. R

G

T

J

 = 150°C; I

= 10A

Fig. 20 - Typical Diode Q

RR

V

CC

= 400V; V

GE

= 15V;T

J

 = 150°C

Fig. 19- Typical Diode I

RR 

vs. di

F

/dt

V

CC

= 400V; V

GE

= 15V;

I

CE

= 10A; T

J

 = 150°C

0

50

100

150

RG (Ω)

0

5

10

15

20

25

I R

R

 (

A

)

0

500

1000

1500

diF /dt (A/μs)

0

5

10

15

20

25

I R

R

 (

A

)

0

5

10

15

20

25

IF (A)

0

5

10

15

20

25

I R

R

 (

A

)

RG = 10 Ω

RG =22 Ω

RG =47 Ω

RG =100 Ω

0

500

1000

1500

diF /dt (A/μs)

400

500

600

700

800

900

1000

1100

1200

Q

R

R

 (

nC

)

22Ω

 47Ω

100 

Ω

 10Ω

20A

10A

5.0A

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Fig. 21 - Typical Diode E

RR 

vs. I

F

T

J

 = 150°C

Fig. 23 - Typical Gate Charge

 

vs. V

GE

 I

CE 

= 10A; L = 600μH

Fig. 22- Typ. Capacitance vs. V

CE

 V

GE

= 0V; f = 1MHz

0

5

10

15

20

25

IF (A)

0

50

100

150

200

250

300

350

400

450

E

ne

rg

J)

22 Ω

10Ω

47 Ω

100 Ω

0

10

20

30

40

Q  G, Total Gate Charge (nC)

0

2

4

6

8

10

12

14

16

V

G

E

 (

V

)

300V

400V

1

10

100

VCE (V)

10

100

1000

C

ap

ac

ita

nc

(p

F

)

Cies

Coes

Cres

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Fig 25.  Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

Fig 24.  Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

1E-6

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

T

he

rm

al

 R

es

po

ns

Z

 th

JC

 )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE
( THERMAL RESPONSE )

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

1E-6

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

T

he

rm

al

 R

es

po

ns

Z

 th

JC

 )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE
( THERMAL RESPONSE )

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W)   

 τi (sec)

0.285        0.000134
0.241       0.000565
0.288       0.0083

τ

J

τ

J

τ

1

τ

1

τ

2

τ

2

τ

3

τ

3

R

1

R

1

R

2

R

2

R

3

R

3

τ

τ

C

Ci   i

/Ri

Ci= 

τi/Ri

Ri (°C/W)   

 τi (sec)

0.846       0.000149
1.830        0.001575
1.143       0.027005

τ

J

τ

J

τ

1

τ

1

τ

2

τ

2

τ

3

τ

3

R

1

R

1

R

2

R

2

R

3

R

3

τ

τ

C

Ci   i

/Ri

Ci= 

τi/Ri

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Fig.C.T.1 - Gate Charge Circuit (turn-off)

Fig.C.T.2 - RBSOA Circuit

1K

VCC

DUT

0

L

Fig.C.T.3 - S.C.SOA Circuit

Fig.C.T.4 - Switching Loss Circuit

Fig.C.T.5 - Resistive Load Circuit

L

Rg

VCC

diode clamp /

DUT

DUT /

DRIVER

- 5V

Rg

VCC

DUT

R =

V

CC

I

CM

L

Rg

80 V

DUT

480V

+

-

DC

Driver

DUT

360V

Maker
Infineon Technologies
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