INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Benefits
Absolute Maximum Ratings
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
R
θJC
Junction-to-Case - IGBT
–––
–––
0.42
R
θJC
Junction-to-Case - Diode
–––
–––
0.83
°C/W
R
θCS
Case-to-Sink, flat, greased surface
–––
0.24
–––
R
θJA
Junction-to-Ambient, typical socket mount
–––
–––
40
W
t
Weight
–––
6 (0.21)
–––
g (oz)
Z
θJC
Transient Thermal Impedance Junction-to-Case
(Fig.24)
E
G
C
Motor Control Co-Pack IGBT
TO-247AD
N-channel
Parameter
Max.
Units
V
CES
Collector-to-Emitter Breakdown Voltage
1200
V
I
C
@ T
C
= 25°C
Continuous Collector Current
(Fig.1)
60
I
C
@ T
C
= 100°C
Continuous Collector Current
(Fig.1)
30
I
CM
Pulsed Collector Current
(Fig.3, Fig. CT.5)
120
I
LM
Clamped Inductive Load Current
(Fig.4, Fig. CT.2)
120
A
I
F
@ T
C
= 100°C
Diode Continuous Forward Current
30
I
FM
Diode Maximum Forward Current
120
V
GE
Gate-to-Emitter Voltage
± 20
V
P
D
@ T
C
= 25°C
Maximum Power Dissipation
(Fig.2)
300
P
D
@ T
C
= 100°C
Maximum Power Dissipation
(Fig.2)
120
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300, (0.063 in. (1.6mm) from case)
°C
Mounting Torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)
W
• Low V
CE
(on) Non Punch Through (NPT) Technology
• Low Diode V
F
(1.76V Typical @ 25A & 25°C)
• 10
μ
s Short Circuit Capability
• Square RBSOA
• Ultrasoft Diode Recovery Characteristics
• Positive V
CE
(on) Temperature Coefficient
• Extended Lead TO-247AD Package
• Lead-Free
• Benchmark Efficiency for Motor Control Applications
• Rugged Transient Performance
• Low EMI
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation
• Longer leads for Easier Mounting
V
CES
= 1200V
V
CE(on) typ.
= 2.28V
V
GE
= 15V, I
C
= 25A, 25°C
IRGP30B120KD-EP
1
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
May 29, 2014
Form
Quantity
IRGP30B120KD-EP
TO-247AD
Tube
25
IRGP30B120KD-EP
Package Type
Standard Pack
Orderable Part Number
Base Part Number
G C
E
C
2
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
May 29, 2014
IRGP30B120KD-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
Fig.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200
V
V
GE
= 0V,I
c
=250 μA
ΔV
(BR)CES
/
ΔTj
Temperature Coeff. of Breakdown Voltage
+1.2
V/°C
V
GE
= 0V, I
c
= 1 mA ( 25 -125
o
C )
2.28
2.48
I
C
= 25A, V
GE
= 15V
5, 6
Collector-to-Emitter Saturation
2.46
2.66
I
C
= 30A, V
GE
= 15V
7, 9
V
CE(on)
Voltage
3.43
4.00
V
I
C
= 60A, V
GE
= 15V
10
2.74
3.10
I
C
= 25A, V
GE
= 15V, T
J
= 125°C
11
2.98
3.35
I
C
= 30A, V
GE
= 15V, T
J
= 125°C
V
GE(th)
Gate Threshold Voltage
4.0
5.0
6.0
V
V
CE
= V
GE
, I
C
= 250 μA
9 ,10,11,1 2
ΔV
GE(th)
/
ΔTj
Temperature Coeff. of Threshold Voltage
- 1.2
mV/
o
C
V
CE
= V
GE
, I
C
= 1 mA ( 25 -125
o
C )
g
fe
Forward Transconductance
14.8
16.9
19.0
S
V
CE
= 50V, I
C
= 25A, PW=80μs
250
V
GE
= 0V,V
CE
= 1200V
I
CES
Zero Gate Voltage Collector Current
325
675
μA
V
GE
= 0v, V
CE
= 1200V, T
J
=125°C
2000
V
GE
= 0v, V
CE
= 1200V, T
J
=150°C
1.76
2.06
I
C
= 25A
V
FM
Diode Forward Voltage Drop
1.86
2.17
V
I
C
= 30A
8
1.87
2.18
I
C
= 25A, T
J
= 125°C
2.01
2.40
I
C
= 30A, T
J
= 125°C
I
GES
Gate-to-Emitter Leakage Current
±100
nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
Fig.
Q
g
Total Gate charge (turn-on)
169
254
I
C
= 25A
23
Q
ge
Gate - Emitter Charge (turn-on)
19
29
nC
V
CC
=600V
CT 1
Q
gc
Gate - Collector Charge (turn-on)
82
123
V
GE
= 15V
E
on
Turn-On Switching Loss
1066 1250
I
C
= 25A, V
CC
= 600V
CT 4
E
off
Turn-Off Switching Loss
1493 1800
μJ
V
GE
= 15V, Rg = 5
Ω, L=200μH
WF1
E
tot
Total Switching Loss
2559 3050
T
J
= 25
o
C, Energy losses include tail
and diode reverse recovery
WF2
E
on
Turn-on Switching Loss
1660 1856
Ic =25A, V
CC
=600V
13, 15
E
off
Turn-off Switching Loss
2118 2580
μJ
V
GE
= 15V, Rg = 5
Ω, L=200μH
CT 4
E
tot
Total Switching Loss
3778 4436
T
J
= 125
o
C, Energy losses include tail
and diode reverse recovery
WF1 & 2
td(on)
Turn - on delay time
50
65
Ic =25A, V
CC
=600V
14, 16
tr
Rise time
25
35
ns
V
GE
= 15V, Rg = 5
Ω, L=200μH
CT 4
td(off)
Turn - off delay time
210
230
T
J
= 125
o
C,
WF1
tf
Fall time
60
75
WF2
C
ies
Input Capacitance
2200
V
GE
= 0V
C
oes
Output Capacitance
210
pF
V
CC
= 30V
22
C
res
Reverse Transfer Capacitance
85
f = 1.0 MHz
T
J
=150
o
C, Ic = 120A
4
RBSOA
Reverse bias safe operating area
FULL SQUARE
V
CC
= 1000V, V
P
= 1200V
CT 2
Rg = 5
Ω, V
GE
= +15V to 0 V
T
J
= 150
o
C
CT 3
SCSOA
Short Circuit Safe Operating Area
10
----
----
μs
V
CC
= 900V,V
P
= 1200V
WF4
Rg = 5
Ω, V
GE
= +15V to 0 V
E
rec
Reverse recovery energy of the diode
1820 2400
μJ
T
J
= 125
o
C
17,18,1 9
trr
Diode Reverse recovery time
300
ns
V
CC
= 600V, Ic = 25A
20, 21
Irr
Peak Reverse Recovery Current
34
38
A
V
GE
= 15V, Rg = 5
Ω, L=200μH
CT 4 , WF3
Le
Internal Emitter Inductance
13
nH
Measured 5 mm from the package.
3
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
May 29, 2014
IRGP30B120KD-EP
Fig.1 - Maximum DC Collector
Current vs. Case Temperature
0
10
20
30
40
50
60
70
0
40
80
120
160
T
C
(°C)
I
C
( A
)
Fig.2 - Power Dissipation vs. Case
Temperature
0
40
80
120
160
200
240
280
320
0
40
80
120
160
T
C
(°C)
P
t o
t
( W
)
Fig.3 - Forward SOA
T
C
=25°C; Tj < 150°C
0.1
1
10
100
1000
1
10
100
1000
10000
V
CE
(V)
I
C
( A
)
DC
10ms
1ms
100μ s
10μ s
2μs
PULSED
Fig.4 - Reverse Bias SOA
Tj = 150°C, V
GE
= 15V
1
10
100
1000
1
10
100
1000
10000
V
CE
(V)
I
C
( A
)
4
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
May 29, 2014
IRGP30B120KD-EP
Fig.5 - Typical IGBT Output
Characteristics
Tj= -40°C; tp=300μs
0
5
10
15
20
25
30
35
40
45
50
55
60
0
1
2
3
4
5
6
V
CE
(V)
I
C
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8V
Fig.6 - Typical IGBT Output
Characteristics
Tj=25°C; tp=300μs
0
5
10
15
20
25
30
35
40
45
50
55
60
0
1
2
3
4
5
6
V
CE
(V)
I
C
( A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8V
Fig.7 - Typical IGBT Output
Characteristics
Tj=125°C; tp=300μs
0
5
10
15
20
25
30
35
40
45
50
55
60
0
1
2
3
4
5
6
V
CE
(V)
I
C
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8V
Fig.8 - Typical Diode Forward
Characteristic
tp=300μs
0
5
10
15
20
25
30
35
40
45
50
55
60
0
1
2
3
4
V
F
(V)
I
F
( A
)
- 40°C
25°C
125°C
5
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
May 29, 2014
IRGP30B120KD-EP
Fig.9 - Typical V
CE
vs V
GE
Tj= -40°C
0
2
4
6
8
10
12
14
16
18
20
6
8
10
12
14
16
18
20
V
GE
(V)
V
C E
( V
)
I
CE
=10A
I
CE
=25A
I
CE
=50A
Fig.12 - Typ. Transfer Characteristics
V
CE
=20V; tp=20μs
0
25
50
75
100
125
150
175
200
225
250
0
4
8
12
16
20
V
GE
(V)
I
C
(
A
)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Fig.10 - Typical V
CE
vs V
GE
Tj= 25°C
0
2
4
6
8
10
12
14
16
18
20
6
8
10
12
14
16
18
20
V
GE
(V)
V
C E
( V
)
I
CE
=10A
I
CE
=25A
I
CE
=50A
Fig.11 - Typical V
CE
vs V
GE
Tj= 125°C
0
2
4
6
8
10
12
14
16
18
20
6
8
10
12
14
16
18
20
V
GE
(V)
V
C E
( V )
I
CE
=10A
I
CE
=25A
I
CE
=50A
6
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
May 29, 2014
IRGP30B120KD-EP
Fig.16 - Typical Switching Time vs Rg
Tj=125°C; L=200μH; V
CE
=600V;
I
CE
=25A; V
GE
=15V
10
100
1000
0
5 10 15 20 25 30 35 40 45 50 55
Rg (ohms)
t
( n
S
)
tdon
tdoff
tr
tf
Fig.13 - Typical Energy Loss vs Ic
Tj=125°C; L=200μH; V
CE
=600V;
Rg=22
Ω
; V
GE
=15V
0
1000
2000
3000
4000
5000
6000
7000
8000
0
10
20
30
40
50
60
I
C
(A)
E
n e
r
g y
(
μ
J )
Eon
Eoff
Fig.15 - Typical Energy Loss vs Rg
Tj=125°C; L=200μH; V
CE
=600V;
I
CE
=25A; V
GE
=15V
1500
1700
1900
2100
2300
2500
2700
2900
3100
3300
3500
0
5 10 15 20 25 30 35 40 45 50 55
Rg (ohms)
E
n e
r
g
y
( u
J
)
Eon
Eoff
Fig.14 - Typical Switching Time vs Ic
Tj=125°C; L=200μH; V
CE
=600V;
Rg=22
Ω
;V
GE
=15V
10
100
1000
0
10
20
30
40
50
60
I
C
(A)
t ( n
S )
tdon
tdoff
tf
tr
7
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
May 29, 2014
IRGP30B120KD-EP
Fig.20 - Typical Diode Q
RR
V
CC
=600V; V
GE
=15V; Tj=125°C
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
0
500
1000
1500
dI
F
/ dt (A/μs)
Q
R R
(
n
C
)
51
Ω
22
Ω
10
Ω
5
Ω
50A
40A
30A
25A
20A
Fig.18 - Typical Diode I
RR
vs Rg
Tj=125°C; I
F
=25A
0
5
10
15
20
25
30
35
40
45
0
5
10 15 20 25 30 35 40 45 50 55
Rg (ohms)
I
R R
( A
)
Fig.17 - Typical Diode I
RR
vs I
F
Tj=125°C
0
5
10
15
20
25
30
35
40
45
0
10
20
30
40
50
60
I
F
(A)
I
R R
( A )
Rg=5
Ω
Rg=10
Ω
Rg=22
Ω
Rg=51
Ω
Fig.19 - Typical Diode I
RR
vs dI
F
/dt
V
CC
=600V; V
GE
=15V
I
F
=25A; Tj=125°C
0
5
10
15
20
25
30
35
40
45
0
500
1000
1500
dI
F
/ dt (A/μs)
I
R R
( A )
Rg=22
Ω
Rg=51
Ω
Rg=10
Ω
Rg=5
Ω
8
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
May 29, 2014
IRGP30B120KD-EP
Fig.21 - Typ. Diode E
rec
vs. I
F
Tj=125°C
800
1000
1200
1400
1600
1800
2000
2200
2400
0
10
20
30
40
50
60
I
F
(A)
E n e r
g y (
u J
)
5
Ω
10
Ω
22
Ω
51
Ω
Fig.23 - Typ. Gate Charge vs. V
GE
I
C
=25A; L=600μH
0
2
4
6
8
10
12
14
16
0
40
80
120
160
200
Q
G
, Total Gate Charge (nC)
V
G E
( V
)
600V
800V
Fig.22 - Typical Capacitance vs V
CE
V
GE
=0V; f=1MHz
10
100
1000
10000
0
20
40
60
80
100
V
CE
(V)
C a p a c I t a n c e ( p F )
C
ies
C
oes
C
res
9
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
May 29, 2014
IRGP30B120KD-EP
Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case
0.001
0.01
0.1
1
10
0.00001
0.00010
0.00100
0.01000
0.10000
1.00000
10.00000
t
1
, Rectangular Pulse Duration (sec)
θ
SINGLE
PULSE
0.05
0.02
D =0.5
0.01
0.2
0.1
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P
DM
t
1
t
2
10
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
May 29, 2014
IRGP30B120KD-EP
Fig. CT.1 - Gate Charge Circuit (turn-off)
Fig. CT.2 - RBSOA Circuit
Fig. CT.3 - S.C. SOA Circuit
L
Rg
80 V
DUT
1000V
D
C
Driver
DUT
900V
Fig. CT.4 - Switching Loss Circuit
1K
VCC
DUT
0
L
L
Rg
VCC
diode clamp /
DUT
DUT /
DRIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
Fig. CT.5 - Resistive Load Circuit