IRFR825TRPbF
12/19/12
www.irf.com
1
HEXFET
®
Power MOSFET
Features and Benefits
• Fast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Higher Gate voltage threshold offers improved noise
immunity
.
Applications
• Zero Voltage Switching SMPS
• Uninterruptible Power Supplies
• Motor Control applications
PD - 96433A
S
D
G
Notes
through
are on page 2
D-Pak
IRFR825TRPbF
G
S
D
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
6.0
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
3.9
A
I
DM
Pulsed Drain Current
c
24
P
D
@T
C
= 25°C Power Dissipation
119
W
Linear Derating Factor
1.0
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt
e
9.9
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
A
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
c
p-n junction diode.
V
SD
Diode Forward Voltage
––– –––
1.2
V
T
J
= 25°C, I
S
= 6.0A, V
GS
= 0V
f
t
rr
Reverse Recovery Time
–––
92
138
ns T
J
= 25°C, I
F
= 6.0A
––– 152
228
T
J
= 125°C, di/dt = 100A/μs
f
Q
rr
Reverse Recovery Charge
––– 167
251
nC T
J
= 25°C, I
S
= 6.0A, V
GS
= 0V
f
––– 292
438
T
J
= 125°C, di/dt = 100A/μs
f
I
RRM
Reverse Recovery Current
–––
3.6
5.4
A
t
on
Forward Turn-On Time
300 (1.6mm from case )
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
––– –––
–––
–––
6.0
24
T
J
= 25°C, I
S
= 6.0A, V
GS
= 0V
di/dt = 100A/μs
f
V
DSS
R
DS(on)
typ.
Trr
typ.
I
D
500V
1.05
Ω
92ns
6.0A
IRFR825TRPbF
2
www.irf.com
Repetitive rating; pulse width limited by max.
junction temperature. (See Fig. 11)
Starting T
J
= 25°C, L = 40mH, R
G
= 25
Ω,I
AS
= 3.0A.
(See Figure 13).
I
SD
= 6.0A, di/dt ≤ 416A/μs, V
DD
V
(BR)DSS
,T
J
≤ 150°C.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Notes:
C
oss
eff. is a fixed capacitance that gives the same charging timeas
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff.(ER) is a fixed
capacitance that stores the same energy as C
oss
while V
DS
is rising
from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN- 994 echniques refer to application note #AN-994.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
500
–––
–––
V
ΔV
(BR)DSS
/
ΔT
J
Breakdown Voltage Temp. Coefficient
–––
0.33
–––
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
–––
1.05
1.3
Ω
V
GS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
I
DSS
Drain-to-Source Leakage Current
–––
–––
25
μA
–––
–––
2.0
mA
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
7.5
–––
–––
S
Q
g
Total Gate Charge
–––
–––
34
Q
gs
Gate-to-Source Charge
–––
–––
11
nC
Q
gd
Gate-to-Drain ("Miller") Charge
–––
–––
14
t
d(on)
Turn-On Delay Time
–––
8.5
–––
t
r
Rise Time
–––
25
–––
ns
t
d(off)
Turn-Off Delay Time
–––
30
–––
t
f
Fall Time
–––
20
–––
C
iss
Input Capacitance
–––
1346
–––
C
oss
Output Capacitance
–––
76
–––
C
rss
Reverse Transfer Capacitance
–––
15
–––
C
oss
Output Capacitance
–––
1231
–––
pF
C
oss
Output Capacitance
–––
25
–––
C
oss
eff.
Effective Output Capacitance
–––
51
–––
C
oss
eff. (ER)
Effective Output Capacitance
(Energy Related)
Avalanche Characteristics
Parameter
Typ.
Units
E
AS
Single Pulse Avalanche Energy
d
–––
mJ
I
AR
Avalanche Current
c
–––
A
E
AR
Repetitive Avalanche Energy
c
–––
mJ
Thermal Resistance
Parameter
Typ.
Units
R
θJC
Junction-to-Case
h
–––
R
θJA
Junction-to-Ambient (PCB Mount)
i
–––
°C/W
R
θJA
Junction-to-Ambient
–––
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 3.7A
f
V
GS
= 20V
Conditions
V
DS
= 50V, I
D
= 3.7A
V
GS
= -20V
I
D
= 6.0A
V
DS
= 400V
V
GS
= 10V, See Fig.14a &14b
f
V
DD
= 250V
I
D
= 6.0A
R
G
=7.5
Ω
V
GS
= 10V, See Fig. 15a & 15b
f
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0KHz, See Fig. 5
3
11.9
Max.
178
V
GS
= 0V,V
DS
= 0V to 400V
g
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 400V, ƒ = 1.0MHz
110
Max.
1.05
50
–––
43
–––
nA
IRFR825TRPbF
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.8V
5.5V
BOTTOM
5.3V
≤60μs
PULSE WIDTH Tj = 25°C
5.3V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
≤60μs
PULSE WIDTH Tj = 150°C
5.3V
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.8V
5.5V
BOTTOM
5.3V
2
4
6
8
10
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 150°C
VDS = 50V
≤60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.4
0.7
1.0
1.3
1.6
1.9
2.2
2.5
R
D
S
(o
n)
,
D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
N
or
m
al
iz
ed
)
ID = 6.0A
VGS = 10V
IRFR825TRPbF
4
www.irf.com
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typ. Breadown Voltage
vs. Temperature
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
100000
C
, C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V, f = 1 KHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
500
525
550
575
600
625
V
(B
R
)D
S
S
, D
ra
in
-t
o-
S
ou
rc
e
B
re
ak
do
w
n
V
ol
ta
ge
(
V
)
Id = 1mA
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
I S
D
, R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 150°C
VGS = 0V
0
5
10
15
20
25
30
QG, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
V
G
S
, G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(
V
)
VDS= 400V
VDS= 250V
VDS= 100V
ID= 6.0A
IRFR825TRPbF
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 9. Typical Rdson Vs. Drain Current
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
T
he
rm
al
R
es
po
ns
e
(
Z
th
JC
)
°
C
/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0
2
4
6
8
10
12
ID , Drain Current (A)
0.8
1.0
1.2
1.4
1.6
1.8
2.0
R
D
S
(
on
)
, D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(Ω
)
VGS = 10V
25
50
75
100
125
150
TC , Case Temperature (°C)
0
1
2
3
4
5
6
7
I D
,
D
ra
in
C
ur
re
nt
(
A
)
IRFR825TRPbF
6
www.irf.com
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Fig 12. Maximum Safe Operating Area
Fig 14a. Gate Charge Test Circuit
Fig 14b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
1K
VCC
DUT
0
L
S
Fig 13b. Unclamped Inductive Waveforms
Fig 13a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
RG
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
E
A
S
,
S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP 0.59A
1.02A
BOTTOM 3.0A
1
10
100
1000
VDS, Drain-toSource Voltage (V)
0.1
1
10
100
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
DC
IRFR825TRPbF
www.irf.com
7
Fig 16.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
*
V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
V
GS
V
DS
90%
10%
t
d(on)
t
d(off)
t
r
t
f
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
R
D
V
GS
R
G
D.U.T.
10V
+
- V
DD
V
GS
IRFR825TRPbF
8
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D-Pak (TO-252AA) Part Marking Information
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
INT ERNATIONAL
ASSEMBLED ON WW 16, 2001
IN THE ASSEMBLY LINE "A"
OR
Note: "P" in assembly line position
EXAMPLE:
LOT CODE 1234
THIS IS AN IRFR120
WITH ASSEMBLY
indicates "Lead-Free"
PRODUCT (OPTIONAL)
P = DESIGNATES LEAD-FREE
A = ASSEMBLY SITE CODE
PART NUMBER
WEEK 16
DATE CODE
YEAR 1 = 2001
RECTIFIER
INTERNATIONAL
LOGO
LOT CODE
ASSEMBLY
34
12
IRFR120
116A
LINE A
34
RECTIFIER
LOGO
IRFR120
12
ASSEMBLY
LOT CODE
YEAR 1 = 2001
DATE CODE
PART NUMBER
WEEK 16
"P" in ass embly line position indicates
"Lead-Free" qualification to the consumer-level
P = DESIGNATES LEAD-FREE
PRODUCT QUALIFIED TO THE
CONSUMER LEVEL (OPTIONAL)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRFR825TRPbF
www.irf.com
9
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/2012
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR
TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH