HEXFET
®
Power MOSFET
V
DSS
30
V
R
DS(on)
max
(@ V
GS
= 10V)
7.8
Qg
(typical)
7.3
Rg
(typical)
0.5
I
D
(@T
C (Bottom)
= 25°C)
40 A
m
nC
PQFN 3.3 x 3.3 mm
Features
Benefits
Low Charge (typical 7.3nC)
Lower Switching Losses
Low Thermal Resistance to PCB (<4.7°C/W)
Enable better thermal dissipation
100% Rg tested
Increased Reliability
Low Profile (< 1.0 mm)
results in Increased Power Density
Industry-Standard Pinout
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification
Increased Reliability
Notes through are on page 9
Absolute Maximum Ratings
Parameter Max.
Units
V
DS
Drain-to-Source Voltage
30
V
GS
Gate-to-Source Voltage
± 20
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
14
A
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V
40
I
D
@ T
C(Bottom)
= 100°C Continuous Drain Current, V
GS
@ 10V
28
I
DM
Pulsed Drain Current 96
P
D
@T
A
= 25°C
Power Dissipation 2.5
W
P
D
@T
C(Bottom)
= 25°C
Power Dissipation 27
Linear Derating Factor 0.02
W/°C
T
J
Operating Junction and
-55 to + 150
°C
T
STG
Storage Temperature Range
V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
11
Applications
Control MOSFET for Buck Converters
IRFHM831PbF
1
2016-2-26
Orderable part number
Package Type
Standard Pack
Note
Form Quantity
IRFHM831TRPbF
PQFN 3.3mm x 3.3mm
Tape and Reel
4000
IRFHM831TR2PBF
PQFN 3.3mm x 3.3mm
Tape and Reel
400
EOL notice # 259
IRFHM831PbF
2
2016-2-26
D
S
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
V
GS
= 0V, I
D
= 250µA
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
–––
0.02
–––
V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
6.6
7.8
m
V
GS
= 10V, I
D
= 12A
––– 10.7 12.6
V
GS
= 4.5V, I
D
= 12A
V
GS(th)
Gate Threshold Voltage
1.35
1.8
2.35
V
V
GS(th)
Gate Threshold Voltage Coefficient
–––
-6.8
––– mV/°C
I
DSS
Drain-to-Source Leakage Current
–––
–––
1
µA
V
DS
= 24V, V
GS
= 0V
––– ––– 150
V
DS
= 24V,V
GS
= 0V,T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
V
GS
= -20V
gfs Forward
Transconductance
82
–––
–––
S
V
DS
= 15V, I
D
= 12A
Q
g
Total Gate Charge
–––
16
–––
nC
V
GS
= 10V, V
DS
= 15V, I
D
= 12A
Q
g
Total Gate Charge
–––
7.3
11
Q
gs1
Pre-Vth Gate-to-Source Charge
–––
1.7
–––
V
DS
= 15V
Q
gs2
Post-Vth Gate-to-Source Charge
–––
0.9
–––
V
GS
= 4.5V
Q
gd
Gate-to-Drain Charge
–––
2.5
–––
I
D
= 12A
Q
godr
Gate Charge Overdrive
–––
2.2
–––
See Fig.17 & 18
Q
sw
Switch Charge (Q
gs2
+ Q
gd
) –––
3.4
–––
Q
oss
Output Charge
–––
5.1
–––
nC V
DS
= 16V, V
GS
= 0V
R
G
Gate Resistance
–––
0.5
–––
t
d(on)
Turn-On Delay Time
–––
6.9
–––
ns
V
DD
= 15V, V
GS
= 4.5V
t
r
Rise Time
–––
12
–––
I
D
= 12A
t
d(off)
Turn-Off Delay Time
–––
6.2
–––
R
G
= 1.8
t
f
Fall Time
–––
4.7
–––
See Fig.15
C
iss
Input Capacitance
–––
1050
–––
pF
V
GS
= 0V
C
oss
Output Capacitance
–––
190
–––
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
–––
80
–––
ƒ = 1.0MHz
V
DS
= V
GS
, I
D
= 25µA
Thermal Resistance
Parameter Typ.
Max.
Units
R
JC
(Bottom)
Junction-to-Case –––
4.7
R
JC
(Top)
Junction-to-Case –––
44
R
JA
Junction-to-Ambient –––
50
R
JA
(<10s)
Junction-to-Ambient –––
32
°C/W
Avalanche Characteristics
Parameter Typ.
Max.
Units
E
AS (Thermally limited)
Single Pulse Avalanche Energy –––
50
mJ
I
AR
Avalanche Current –––
12
A
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
I
S
Continuous Source Current
––– ––– 40
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 96
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
–––
1.0
V
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
t
rr
Reverse Recovery Time
–––
15
22
ns
T
J
= 25°C, I
F
= 12A, V
DD
= 15V
Q
rr
Reverse Recovery Charge
–––
16
24
nC di/dt = 300A/µs
IRFHM831PbF
3
2016-2-26
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
60µs PULSE WIDTH
Tj = 25°C
2.8V
VGS
TOP 10V
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
BOTTOM
2.8V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
60µs PULSE WIDTH
Tj = 150°C
2.8V
VGS
TOP 10V
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
BOTTOM
2.8V
2.0
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
VDS = 15V
60µs PULSE WIDTH
TJ = 25°C
TJ = 150°C
-60 -40 -20
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(o
n)
,
D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
N
or
m
al
iz
ed
)
ID = 12A
VGS = 10V
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
, C
ap
ac
ita
nc
e
(p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
5
10
15
20
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
14
V
G
S
, G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(
V
)
VDS= 24V
VDS= 15V
VDS= 6.0V
ID= 12A
IRFHM831PbF
4
2016-2-26
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.2
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
0.1
1.0
10.0
100.0
I S
D
,
R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 150°C
VGS = 0V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
25
50
75
100
125
150
TC, Case Temperature (°C)
0
10
20
30
40
50
I D
,
D
ra
in
C
ur
re
nt
(
A
)
LIMITED BY PACKAGE
-75
-50
-25
0
25
50
75
100 125 150
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
3.0
V
G
S
(t
h)
G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(
V
)
ID = 1.0A
ID = 1.0mA
ID = 250µA
ID = 25µA
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
he
rm
al
R
es
po
ns
e
(
Z
th
JC
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
IRFHM831PbF
5
2016-2-26
Fig 12. On– Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
Fig 14a. Unclamped Inductive Test Circuit
R G
IAS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
Fig 14b. Unclamped Inductive Waveforms
2
4
6
8
10
12
14
16
18
20
VGS, Gate-to-Source Voltage (V)
0
5
10
15
20
25
30
35
40
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
)
TJ = 25°C
TJ = 125°C
ID = 12A
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
0
40
80
120
160
200
E
A
S
,
S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP
3.1A
6.4A
BOTTOM
12A
IRFHM831PbF
6
2016-2-26
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
Fig 17. Gate Charge Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
IRFHM831PbF
7
2016-2-26
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 3.3 x 3.3 Outline “B” Package Details
PQFN 3.3 x 3.3 Part Marking
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
XXXX
?YWW?
XXXXX
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
MARKING CODE
(Per Marking Spec)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
DATE CODE
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
PIN 1
IDENTIFIER
IRFHM831PbF
8
2016-2-26
PQFN 3.3 x 3.3 Tape and Reel
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
Bo
W
P1
Ao
Ko
CODE
TAPE DIMENSIONS
REEL DIMENSIONS
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Pitch between successive cavity centers
Overall width of the carrier tape
Bo
W
P1
Ao
Ko
DIMENSION (MM)
CODE
MIN
MAX
DIMENSION (INCH)
MIN
MAX
3.50
3.70
.138
.146
1.10
1.30
7.90
8.10
.043
.051
11.80
12.20
.311
.319
12.30
12.50
.465
.480
.484
.492
3.50
3.70
.138
.146
DESCRIPTION
W1
Qty
4000
Reel Diameter
13 Inches
IRFHM831PbF
9
2016-2-26
Qualification Information
†
Qualification Level
Moisture Sensitivity Level
PQFN 3.3mm x 3.3mm
MSL1
(per JEDEC J-STD-020D
††)
RoHS Compliant
Yes
Industrial
(per JEDEC JESD47F
††
guidelines)
† Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.69mH, R
G
= 50
, I
AS
= 12A.
Pulse width
400µs; duty cycle 2%.
R
is measured at T
J
of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 40A by production
test capability.
IRFHM831PbF
10
2016-2-26
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (
www.infineon.com
).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
5/14/2014
Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)
Updated package outline on page 7.
Updated Tape and Reel on page 8.
Updated data sheet with new IR corporate template.
6/5/2014
Updated schematic on page1
2/26/2016
Updated datasheet with corporate template
Removed package outline “Punched Version” on page 7.