IRFH8318PbF Product Datasheet

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh8318pbf-html.html
background image

HEXFET

®

 Power MOSFET

Notes

  through 

‡

 are on page 9

Features and Benefits

Applications

•  

Synchronous MOSFET for high frequency buck converters

PQFN 5X6 mm

Absolute Maximum Ratings

Parameter

Units

V

DS

Drain-to-Source Voltage

V

GS

Gate-to-Source Voltage

I

D

 @ T

A

 = 25°C

Continuous Drain Current, V

GS

 @ 10V

I

D

 @ T

A

 = 70°C

Continuous Drain Current, V

GS

 @ 10V

I

D

 @ T

C(Bottom)

 = 25°C

Continuous Drain Current, V

GS

 @ 10V

I

D

 @ T

C(Bottom)

 = 100°C

Continuous Drain Current, V

GS

 @ 10V 

I

D

 @ T

C

 = 25°C

Continuous Drain Current, V

GS

 @ 10V (Package Limited)

I

DM

Pulsed Drain Current 

c

P

D

 @T

A

 = 25°C

Power Dissipation 

g

P

D

 @T

C(Bottom)

 = 25°C

Power Dissipation 

g

Linear Derating Factor 

g

W/°C

T

Operating Junction and

T

STG

Storage Temperature Range

V

W

A

°C

Max.

27

76

hi

400

 ± 20

30

21

120

hi

50

i

-55  to + 150

3.6

0.029

59

V

DS                          

30

V

V

gs  max      

 ± 20

V

R

DS(on) max 

(@V

GS

 = 10V)

3.1

(@V

GS

 = 4.5V)

4.6

Q

g typ

19

nC

I

(@T

c(Bottom)

 = 25°C)

50i

A

m

Ω

Features

Benefits

Low Thermal Resistance to PCB (< 1.7°C/W)

Enable better thermal dissipation

Low Profile (<1.2mm)        

results in Increased Power Density

Industry-Standard Pinout    

Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques                          

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen    

Environmentally Friendlier

MSL1, Consumer Qualification  

Increased Reliability

IRFH8318PbF

1

           www.irf.com 

© 

2014 International Rectifier   

              Submit Datasheet Feedback

                                  May 13, 2014

Form

Quantity

IRFH8318TRPBF

PQFN 5mm x 6mm

Tape and Reel

4000

IRFH8318TR2PBF

PQFN 5mm x 6mm

Tape and Reel

400

EOL notice # 259

Orderable part number

Package Type

Standard Pack

Note

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh8318pbf-html.html
background image

2

           www.irf.com 

© 

2014 International Rectifier   

              Submit Datasheet Feedback

                                  May 13, 2014

IRFH8318PbF

D

S

G

Thermal Resistance

Parameter

Typ.

Max.

Units

R

θJC

 (Bottom)

Junction-to-Case 

f

–––

1.7

R

θJC

 (Top)

Junction-to-Case 

f

–––

32

°C/W

R

θJA 

Junction-to-Ambient 

g

–––

35

R

θJA

 (<10s)

Junction-to-Ambient 

g

–––

22

Static @ T

J

 = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

BV

DSS

Drain-to-Source Breakdown Voltage

30

–––

–––

V

ΔΒV

DSS

/

ΔT

Breakdown Voltage Temp. Coefficient

–––

0.019

–––

V/°C

R

DS(on)

Static Drain-to-Source On-Resistance

–––

2.5

3.1

–––

3.6

4.6

V

GS(th)

Gate Threshold Voltage

1.35

1.8

2.35

V

ΔV

GS(th)

Gate Threshold Voltage Coefficient

–––

-6.0

–––

mV/°C

I

DSS

Drain-to-Source Leakage Current

–––

–––

1

–––

–––

150

I

GSS

Gate-to-Source Forward Leakage

–––

–––

100

Gate-to-Source Reverse Leakage

–––

–––

-100

gfs

Forward Transconductance

81

–––

–––

S

Q

g

Total Gate Charge 

–––

41

–––

nC

Q

g

Total Gate Charge 

–––

19

–––

Q

gs1

Pre-Vth Gate-to-Source Charge

–––

5.8

–––

Q

gs2

Post-Vth Gate-to-Source Charge

–––

2.3

–––

Q

gd

Gate-to-Drain Charge

–––

4.4

–––

Q

godr

Gate Charge Overdrive

–––

6.5

–––

Q

sw

Switch Charge (Q

gs2

 + Q

gd

)

–––

6.7

–––

Q

oss

Output Charge

–––

18

–––

nC

R

G

Gate Resistance

–––

1.7

–––

Ω

t

d(on)

Turn-On Delay Time

–––

15

–––

t

r

Rise Time

–––

33

–––

t

d(off)

Turn-Off Delay Time

–––

18

–––

t

f

Fall Time

–––

12

–––

C

iss

Input Capacitance

–––

3180

–––

C

oss

Output Capacitance

–––

700

–––

C

rss

Reverse Transfer Capacitance

–––

270

–––

Avalanche Characteristics

Parameter

Units

E

AS

Single Pulse Avalanche Energy 

d

mJ

I

AR

Avalanche Current 

c

A

Diode Characteristics

        Parameter

Min. Typ. Max. Units

I

S

Continuous Source Current 
(Body Diode)

I

SM

Pulsed Source Current
(Body Diode)

c

V

SD

Diode Forward Voltage

–––

–––

1.0

V

t

rr

Reverse Recovery Time

–––

16

24

ns

Q

rr

Reverse Recovery Charge

–––

35

53

nC

t

on

Forward Turn-On Time

Time is dominated by parasitic Inductance

MOSFET symbol

nA

ns

A

pF

nC

V

DS

 = 15V

–––

V

GS

 = 20V

V

GS

 = -20V

–––

–––

400

–––

–––

50

i

Conditions

V

GS

 = 0V, I

D

 = 250μA

Reference to 25°C, I

D

 = 1.0mA 

V

GS

 = 10V, I

D

 = 20A 

e

Conditions

Max.

160

20

ƒ = 1.0MHz

T

J

 = 25°C, I

F

 = 20A, V

DD

 = 15V

di/dt = 380A/μs 

e

T

J

 = 25°C, I

S

 = 20A, V

GS

 = 0V 

e

showing  the
integral reverse
p-n junction diode.

Typ.

–––

R

G

=1.8

Ω

V

DS

 = 10V, I

D

 = 20A

I

D

 = 20A

I

D

 = 20A

V

GS

 = 0V

V

DS

 = 10V

V

DS

 = 16V, V

GS

 = 0V

V

DD

 = 15V, V

GS

 = 4.5V

V

DS

 = V

GS

, I

D

 = 50μA

μA

V

GS

 = 4.5V, I

D

 = 16A 

e

V

GS

 = 4.5V 

V

DS

 = 24V, V

GS

 = 0V, T

J

 = 125°C

m

Ω

V

DS

 = 24V, V

GS

 = 0V

V

GS

 = 10V, V

DS

 = 15V, I

D

 = 20A 

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh8318pbf-html.html
background image

3

           www.irf.com 

© 

2014 International Rectifier   

              Submit Datasheet Feedback

                                  May 13, 2014

IRFH8318PbF

Fig 2.  Typical Output Characteristics

Fig 1.  Typical Output Characteristics

Fig 3.  Typical Transfer Characteristics

Fig 6.  Typical Gate Charge vs.Gate-to-Source Voltage

Fig 5.  Typical Capacitance vs.Drain-to-Source Voltage

Fig 4.  Normalized On-Resistance vs. Temperature

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

VGS

TOP          

10V

7.00V

5.00V

4.50V

3.50V

3.00V
2.75V

BOTTOM

2.50V

≤60μs 

PULSE WIDTH

Tj = 25°C

2.5V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

VGS

TOP          

10V

7.00V
5.00V

4.50V

3.50V

3.00V

2.75V

BOTTOM

2.50V

≤60μs 

PULSE WIDTH

Tj = 150°C

2.5V

1

2

3

4

5

6

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VDS = 15V
≤60μs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

R

D

S

(o

n)

 ,

 D

ra

in

-t

o-

S

ou

rc

O

R

es

is

ta

nc

   

   

   

   

   

   

   

 (

N

or

m

al

iz

ed

)

ID = 20A

VGS = 10V

1

10

100

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

100000

C

, C

ap

ac

ita

nc

(p

F

)

VGS   = 0V,       f = 1 MHZ

Ciss   = Cgs + Cgd,  C ds SHORTED
Crss   = Cgd 

Coss  = Cds + Cgd

Coss

Crss

Ciss

0

10

20

30

40

50

60

 QG  Total Gate Charge (nC)

0

2

4

6

8

10

12

14

V

G

S

, G

at

e-

to

-S

ou

rc

V

ol

ta

ge

 (

V

)

VDS= 24V

VDS= 15V

VDS= 6.0V

ID= 20A

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh8318pbf-html.html
background image

4

           www.irf.com 

© 

2014 International Rectifier   

              Submit Datasheet Feedback

                                  May 13, 2014

IRFH8318PbF

Fig 11.  Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)

Fig 8.  Maximum Safe Operating Area

Fig 9.  Maximum Drain Current vs.

Case (Bottom) Temperature

Fig 7.  Typical Source-Drain Diode Forward Voltage

Fig 10.  Threshold Voltage vs. Temperature

-75 -50 -25

0

25

50

75 100 125 150

TJ , Temperature ( °C )

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

V

G

S

(t

h)

,  G

at

th

re

sh

ol

V

ol

ta

ge

 (

V

)

ID = 50μA

ID = 250μA

ID = 1.0mA

ID = 1.0A

1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

T

he

rm

al

 R

es

po

ns

Z

 th

JC

 )

0.20
0.10

D = 0.50

0.02
0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VSD, Source-to-Drain Voltage (V)

1.0

10

100

1000

I S

D

, R

ev

er

se

 D

ra

in

 C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VGS = 0V

25

50

75

100

125

150

 TC,  Case Temperature (°C)

0

20

40

60

80

100

120

I D

,  

D

ra

in

 C

ur

re

nt

 (

A

)

Limited By Source 

Bonding Technology 

i

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

10000

I D

,  

D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

Tc = 25°C

Tj = 150°C

Single Pulse

OPERATION IN THIS AREA 
LIMITED BY RDS(on)

100μsec

1msec

10msec

DC

Limited By Source 
Bonding Technology

i

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh8318pbf-html.html
background image

5

           www.irf.com 

© 

2014 International Rectifier   

              Submit Datasheet Feedback

                                  May 13, 2014

IRFH8318PbF

Fig 13.  Maximum Avalanche Energy vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

Fig 14b.  Unclamped Inductive Waveforms

Fig 14a.  Unclamped Inductive Test Circuit

tp

V

(BR)DSS

I

AS

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

Fig 15a.  Switching Time Test Circuit

Fig 15b.  Switching Time Waveforms

V

GS

V

DS

90%

10%

t

d(on)

t

d(off)

t

r

t

f

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1

R

D

V

GS

R

G

D.U.T.

10V

+

-

V

DD

V

GS

0

5

10

15

20

VGS, Gate -to -Source Voltage  (V)

2

4

6

8

10

R

D

S

(o

n)

,  

D

ra

in

-t

-S

ou

rc

O

R

es

is

ta

nc

(m

Ω

)

ID = 20A

TJ = 25°C

TJ = 125°C

25

50

75

100

125

150

Starting TJ , Junction Temperature (°C)

0

100

200

300

400

500

600

700

E

A

S

 , 

S

in

gl

P

ul

se

 A

va

la

nc

he

 E

ne

rg

(m

J)

ID

TOP          5.6A
                 8.6A
BOTTOM   20A

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh8318pbf-html.html
background image

6

           www.irf.com 

© 

2014 International Rectifier   

              Submit Datasheet Feedback

                                  May 13, 2014

IRFH8318PbF

Fig 16. 

Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET

®

 Power MOSFETs

Fig 17.  Gate Charge Test Circuit

Fig 18.   Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Circuit Layout Considerations

   •  Low Stray Inductance

   •  Ground Plane

   •  Low Leakage Inductance

      Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple 

≤ 5%

Body Diode  Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

V

GS

=10V

V

DD

I

SD

Driver Gate Drive

D.U.T. I

SD

Waveform

D.U.T. V

DS

Waveform

Inductor Curent

D = 

P.W.

Period

*

 V

GS

 = 5V for Logic Level Devices

*

+

-

+

+

+

-

-

-

ƒ

„

‚

R

G

V

DD

•  dv/dt controlled by R

G

•  Driver same type as D.U.T.

•  I

SD

 controlled by Duty Factor "D"

•  D.U.T. - Device Under Test

D.U.T



1K

VCC

DUT

0

L

S

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh8318pbf-html.html
background image

7

           www.irf.com 

© 

2014 International Rectifier   

              Submit Datasheet Feedback

                                  May 13, 2014

IRFH8318PbF

PQFN 5x6 Outline "E" Package Details

For  footprint  and  stencil  design  recommendations,  please  refer  to  application  note  AN-1154  at

http://www.irf.com/technical-info/appnotes/an-1154.pdf

Note: For the most current drawing please refer to IR website at:

 http://www.irf.com/package/

PQFN 5x6 Outline "E" Part Marking

XXXX

XYWWX

XXXXX

INTERNATIONAL

RECTIFIER LOGO

PART NUMBER

(“4 or 5 digits”)

MARKING CODE

(Per Marking Spec)

ASSEMBLY
SITE CODE

(Per SCOP 200-002)

DATE CODE

PIN 1

IDENTIFIER

LOT CODE

(Eng Mode - Min last 4 digits of EATI#)

(Prod Mode - 4 digits of SPN code)

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh8318pbf-html.html
background image

8

           www.irf.com 

© 

2014 International Rectifier   

              Submit Datasheet Feedback

                                  May 13, 2014

IRFH8318PbF

PQFN 5x6 Outline "E" Tape and Reel

Note: For the most current drawing please refer to IR website at:

 http://www.irf.com/package/

Bo

W

P1

Ao

Ko

CODE

TAPE DIMENSIONS

REEL DIMENSIONS

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE 

Dimension design to accommodate the component width
Dimension design to accommodate the component lenght

Dimension design to accommodate the component thickness

Pitch between successive cavity centers

Overall width of the carrier tape

Bo

W

P1

Ao

Ko

DIMENSION (MM)

CODE

MIN

MAX

DIMENSION (INCH)

MIN

MAX

6.20

6.40

.244

.252

1.10

1.30

7.90

8.10

.043

.051

11.80

12.20

.311

.319

12.30

12.50

.465

.480

.484

.492

5.20

5.40

.205

.213

DESCRIPTION

W1

Qty

4000

Reel Diameter

13   Inches

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh8318pbf-html.html
background image

9

           www.irf.com 

© 

2014 International Rectifier   

              Submit Datasheet Feedback

                                  May 13, 2014

IRFH8318PbF

†

        Qualification standards can be found at International Rectifier’s web site

            http://www.irf.com/product-info/reliability

††

      Higher qualification ratings may be available should the user have such requirements.

            Please contact your International Rectifier sales representative for further information:

           http://www.irf.com/whoto-call/salesrep/

†††

 

   Applicable version of JEDEC standard at the time of product release.

Notes:



 Repetitive rating;  pulse width limited by max. junction temperature.

‚

  Starting T

= 25°C, L = 0.78mH, R

= 50

Ω, I

AS 

= 20A.

ƒ

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

„

 R

θ 

is measured at 

T

J

 of approximately 90°C.

…

 

When mounted on 1 inch square  2 oz copper pad on 1.5x1.5 in. board of FR-4 material.

†

 Calculated continuous current based on maximum allowable junction temperature.

‡ Current is limited to 50A by source bonding technology.

MS L1

(per JE DEC J-S T D-020D

††† 

)

RoHS compliant

Yes

PQFN 5mm x 6mm

Qualification information

Moisture Sensitivity Level

Qualification level

Consumer

††

(per JEDE C JE S D47F

 ††† 

guidelines )

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit 

http://www.irf.com/whoto-call/

Revision History

Date

Comment

• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option  (EOL notice #259)
• Updated Tape and Reel on page 8.
• Updated data sheet based on corporate template.

5/13/2014

Maker
Infineon Technologies