HEXFET
®
Power MOSFET
Notes
through
are on page 10
Applications
l
Synchronous MOSFET for Notebook
Processor Power
l
Synchronous Rectifer MOSFET for Isolated
DC-DC Converters in Networking Systems
Benefits
l
Very low R
DS(ON)
at 4.5V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage and
Current
l
100% Tested for R
G
l
Lead-Free (Qualified up to 260°C Reflow)
l
RoHS compliant (Halogen Free)
l
Low Thermal Resistance
l
Large Source Lead for more reliable Soldering
PQFN
D
D
D
D
S
G
S
S
V
DSS
R
DS(on)
max
Qg
30V
3.3m:@V
GS
= 10V 34nC
Absolute Maximum Ratings
Parameter
Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C
Power Dissipation
g
P
D
@T
A
= 70°C
Power Dissipation
g
Linear Derating Factor
g
W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
R
θJC
Junction-to-Case
f
–––
2.2
R
θJA
Junction-to-Ambient
g
–––
37
°C/W
°C
W
A
V
Max.
25
104
200
± 20
30
20
-55 to + 150
3.4
0.03
2.2
IRFH7932PbF
1
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Form
Quantity
IRFH7932TRPbF
PQFN 5mm x 6mm
Tape and Reel
4000
IRFH7932TR2PbF
PQFN 5mm x 6mm
Tape and Reel
400
EOL notice # 259
Orderable part number
Package Type
Standard Pack
Note
2
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IRFH7932PbF
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
∆ΒV
DSS
/
∆T
J
Breakdown Voltage Temp. Coefficient
–––
0.021
–––
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
–––
2.5
3.3
–––
3.3
3.9
V
GS(th)
Gate Threshold Voltage
1.35
1.8
2.35
V
∆V
GS(th)
Gate Threshold Voltage Coefficient
–––
-5.9
––– mV/°C
I
DSS
Drain-to-Source Leakage Current
–––
–––
1.0
–––
–––
150
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
59
–––
–––
S
Q
g
Total Gate Charge
–––
34
51
Q
gs1
Pre-Vth Gate-to-Source Charge
–––
7.9
–––
Q
gs2
Post-Vth Gate-to-Source Charge
–––
3.6
–––
Q
gd
Gate-to-Drain Charge
–––
11
–––
Q
godr
Gate Charge Overdrive
–––
12
–––
See Fig.17 & 18
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
–––
15
–––
Q
oss
Output Charge
–––
19
–––
nC
R
G
Gate Resistance
–––
0.7
–––
Ω
t
d(on)
Turn-On Delay Time
–––
20
–––
t
r
Rise Time
–––
48
–––
t
d(off)
Turn-Off Delay Time
–––
23
–––
t
f
Fall Time
–––
20
–––
C
iss
Input Capacitance
–––
4270
–––
C
oss
Output Capacitance
–––
830
–––
C
rss
Reverse Transfer Capacitance
–––
420
–––
Avalanche Characteristics
Parameter
Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
c
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage
–––
–––
1.0
V
t
rr
Reverse Recovery Time
–––
21
32
ns
Q
rr
Reverse Recovery Charge
–––
33
50
nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
I
D
= 20A
V
GS
= 0V
V
DS
= 15V
20
ƒ = 1.0MHz
V
GS
= 4.5V, I
D
= 20A
e
V
GS
= 4.5V
Typ.
–––
R
G
=1.8
Ω
V
DS
= 15V, I
D
= 20A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
m
Ω
V
DS
= 24V, V
GS
= 0V
V
DS
= 15V
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 300A/µs
eSee Fig.16
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 20A
See Fig.15
Max.
16
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 25A
e
–––
–––
–––
–––
A
4.2
200
V
DS
= V
GS
, I
D
= 100µA
ns
pF
nC
nA
µA
Conditions
3
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IRFH7932PbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
≤ 60µs PULSE WIDTH
Tj = 25°C
2.3V
VGS
TOP
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM
2.3V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
≤ 60µs PULSE WIDTH
Tj = 150°C
2.3V
VGS
TOP
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM
2.3V
1.0
2.0
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
VDS = 15V
≤ 60µs PULSE WIDTH
TJ = 25°C
TJ = 150°C
-60 -40 -20
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(o
n)
,
D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
N
or
m
al
iz
ed
)
ID = 25A
VGS = 10V
4
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IRFH7932PbF
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
, C
ap
ac
ita
nc
e
(p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
20
40
60
80
100
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
14
V
G
S
, G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(
V
)
VDS= 24V
VDS= 15V
ID= 20A
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I S
D
, R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 150°C
VGS = 0V
0
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
TA = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
5
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IRFH7932PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10. Threshold Voltage Vs. Temperature
25
50
75
100
125
150
TJ , Ambient Temperature (°C)
0
5
10
15
20
25
30
I D
,
D
ra
in
C
ur
re
nt
(
A
)
-75
-50
-25
0
25
50
75
100 125 150
TJ , Temperature ( °C )
0.8
1.2
1.6
2.0
V
G
S
(t
h)
G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(
V
)
ID = 100µA
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
T
he
rm
al
R
es
po
ns
e
(
Z
th
JA
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (°C/W)
τi (sec)
0.54874 0.000128
2.05644 0.023270
7.36536 1.0678
6.44303 38.4
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci i
/Ri
Ci=
τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
6
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IRFH7932PbF
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
RG
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
V
GS
V
DS
90%
10%
t
d(on)
t
d(off)
t
r
t
f
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
V
GS
2
3
4
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
0
2
4
6
8
10
12
14
16
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
Ω
)
TJ = 25°C
TJ = 125°C
ID = 25A
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
10
20
30
40
50
60
70
E
A
S
,
S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP 5.86A
6.91A
BOTTOM 20.0A
7
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IRFH7932PbF
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
µF
50K
Ω
.2
µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 17. Gate Charge Test Circuit
Fig 16.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
*
V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Fig 18. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
8
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IRFH7932PbF
PQFN Part Marking
PQFN Package Details
MARKING CODE
(Per Marking Spec.)
XXXX
XYWWX
XXXXX
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
DATE CODE
ASSEMBLY SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min. last 4 digits of EATI #)
(Prod Mode - 4 digits SPN code)
TOP MARKING (LASER)
6
Note: For the most current drawing please refer to IR website at:
http://www.irf.com/package/
9
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August 11, 2014
IRFH7932PbF
PQFN Tape and Reel
10
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2014 International Rectifier
Submit Datasheet Feedback
August 11, 2014
IRFH7932PbF
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit
http://www.irf.com/whoto-call/
Date
Comments
• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)
• Updated data sheet with new IR corporate template
8/1/2014
• Updated data sheet with PQFN Tape and Reel Diagram from Datasheet IRFH7934PbF
Revision History
12/16/2013
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.078mH, R
G
= 25
Ω, I
AS
= 20A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rthjc is guaranteed by design
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
MSL
1
(per JEDEC J-STD-020D
†††
)
RoHS Compliant
Moisture Sensitivity Level
SO-8
Yes
Qualification Information
†
Qualification level
Consumer
††
(per JEDEC JESD47F
†††
guidelines)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.