IRFH5255PbF Product Datasheet

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background image

HEXFET

®

 Power MOSFET

Notes

  through 

…

 are on page 9

Features and Benefits

Features

Benefits

PQFN 5X6 mm

Applications

•  

Control MOSFET for high Frequency Buck Converters

V

DS

25

V

R

DS(on) max 

(@V

GS

 = 10V)

6.0

m

Ω

Q

g (typical)

7.0

nC

R

G (typical)

0.6

Ω

I

(@T

c(Bottom)

 = 25°C)

51

A

Absolute Maximum Ratings

Parameter

Units

V

DS

Drain-to-Source Voltage

V

GS

Gate-to-Source Voltage

I

D

 @ T

A

 = 25°C

Continuous Drain Current, V

GS

 @ 10V

I

D

 @ T

A

 = 70°C

Continuous Drain Current, V

GS

 @ 10V

I

D

 @ T

C(Bottom)

 = 25°C

Continuous Drain Current, V

GS

 @ 10V 

I

D

 @ T

C(Bottom)

 = 100°C

Continuous Drain Current, V

GS

 @ 10V 

I

DM

Pulsed Drain Current 

c

P

D

 @T

A

 = 25°C

Power Dissipation 

g

P

D

 @T

C(Bottom)

 = 25°C

Power Dissipation 

g

Linear Derating Factor 

g

W/°C

T

Operating Junction and

T

STG

Storage Temperature Range

V

W

A

°C

Max.

15

33
60

 ± 20

25

12
51

-55  to + 150

3.6

0.029

26

Low Charge (typical 7nC)

Lower Switching Losses

Low Rg (typical 0.6

Ω)

Lower Switching Losses

Low Thermal Resistance to PCB (<4.9°C/W)

Increased Power Density

100% Rg tested

Increased Reliability

Low Profile (<0.9 mm)        

results in Increased Power Density

Industry-Standard Pinout    

Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques                                

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen          

Environmentally Friendlier

MSL1, Industrial Qualification  

Increased Reliability

IRFH5255PbF

1

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Form

Quantity

IRFH5255TRPbF

PQFN 5mm x 6mm

Tape and Reel

4000

IRFH5255TR2PbF

PQFN 5mm x 6mm

Tape and Reel

400

EOL notice # 259

Orderable part number

Package Type

Standard Pack

Note

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IRFH5255PbF

S

D

G

Thermal Resistance

Parameter

Typ.

Max.

Units

R

θJC

 (Bottom)

Junction-to-Case 

f

–––

4.9

R

θJC

 (Top)

Junction-to-Case 

f

–––

15

°C/W

R

θJA 

Junction-to-Ambient 

g

–––

35

R

θJA

 (<10s)

Junction-to-Ambient 

g

–––

22

Static @ T

J

 = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

BV

DSS

Drain-to-Source Breakdown Voltage

25

–––

–––

V

ΔΒV

DSS

/

ΔT

Breakdown Voltage Temp. Coefficient

–––

0.02

–––

V/°C

R

DS(on)

Static Drain-to-Source On-Resistance

–––

5.0

6.0

–––

8.8

10.9

V

GS(th)

Gate Threshold Voltage

1.35

1.80

2.35

V

ΔV

GS(th)

Gate Threshold Voltage Coefficient

–––

-6.3

–––

mV/°C

I

DSS

Drain-to-Source Leakage Current

–––

–––

5

–––

–––

150

I

GSS

Gate-to-Source Forward Leakage

–––

–––

100

Gate-to-Source Reverse Leakage

–––

–––

-100

gfs

Forward Transconductance

48

–––

–––

S

Q

g

Total Gate Charge 

–––

14.5

–––

nC

Q

g

Total Gate Charge 

–––

7.0

11

Q

gs1

Pre-Vth Gate-to-Source Charge

–––

1.6

–––

Q

gs2

Post-Vth Gate-to-Source Charge

–––

1.2

–––

Q

gd

Gate-to-Drain Charge

–––

2.7

–––

Q

godr

Gate Charge Overdrive

–––

1.5

–––

See Fig.17 & 18

Q

sw

Switch Charge (Q

gs2

 + Q

gd

)

–––

3.8

–––

Q

oss

Output Charge

–––

6.0

–––

nC

R

G

Gate Resistance

–––

0.6

–––

Ω

t

d(on)

Turn-On Delay Time

–––

7.9

–––

t

r

Rise Time

–––

10.7

–––

t

d(off)

Turn-Off Delay Time

–––

6.5

–––

t

f

Fall Time

–––

3.8

–––

C

iss

Input Capacitance

–––

988

–––

C

oss

Output Capacitance

–––

289

–––

C

rss

Reverse Transfer Capacitance

–––

127

–––

Avalanche Characteristics

Parameter

Units

E

AS

Single Pulse Avalanche Energy 

d

mJ

I

AR

Avalanche Current 

c

A

Diode Characteristics

        Parameter

Min. Typ. Max. Units

I

S

Continuous Source Current 
(Body Diode)

I

SM

Pulsed Source Current
(Body Diode)

c

V

SD

Diode Forward Voltage

–––

–––

1.0

V

t

rr

Reverse Recovery Time

–––

11

17

ns

Q

rr

Reverse Recovery Charge

–––

7.8

12

nC

t

on

Forward Turn-On Time

Time is dominated by parasitic Inductance

MOSFET symbol

nA

ns

A

pF

nC

V

DS

 = 13V

–––

V

GS

 = 20V

V

GS

 = -20V

–––

–––

60

–––

–––

51

Conditions

V

GS

 = 0V, I

D

 = 250μA

Reference to 25°C, I

D

 = 1mA 

V

GS

 = 10V, I

D

 = 15A 

e

Conditions

See Fig.15

Max.

53
15

ƒ = 1.0MHz

T

J

 = 25°C, I

F

 = 15A, V

DD

 = 13V

di/dt = 300A/μs 

e

T

J

 = 25°C, I

S

 = 15A, V

GS

 = 0V 

e

showing  the
integral reverse
p-n junction diode.

–––

R

G

=1.0

Ω

V

DS

 = 13V, I

D

 = 15A

V

DS

 = 20V, V

GS

 = 0V, T

J

 = 125°C

μA

I

D

 = 15A

I

D

 = 15A

V

GS

 = 0V

V

DS

 = 13V

V

DS

 = 20V, V

GS

 = 0V

V

DS

 = V

GS

, I

D

 = 25μA

V

GS

 = 4.5V, I

D

 = 15A 

e

V

GS

 = 4.5V 

Typ.

m

Ω

V

DS

 = 16V, V

GS

 = 0V

V

DD

 = 13V, V

GS

 = 4.5V

V

GS

 = 10V, V

DS

 = 13V, I

D

 = 15A 

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IRFH5255PbF

Fig 4.  Normalized On-Resistance Vs. Temperature

Fig 2.  Typical Output Characteristics

Fig 1.  Typical Output Characteristics

Fig 3.  Typical Transfer Characteristics

Fig 6.  Typical Gate Charge Vs.Gate-to-Source Voltage

Fig 5.  Typical Capacitance Vs.Drain-to-Source Voltage

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

VGS

TOP          

10V

4.50V

3.75V

3.50V

3.25V

3.00V

2.75V

BOTTOM

2.50V

≤60μs 

PULSE WIDTH

Tj = 25°C

2.50V

1.5

2

2.5

3

3.5

4

4.5

5

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VDS = 15V
≤60μs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

R

D

S

(o

n)

 ,

 D

ra

in

-t

o-

S

ou

rc

O

R

es

is

ta

nc

   

   

   

   

   

   

   

 (

N

or

m

al

iz

ed

)

ID = 15A

VGS = 10V

1

10

100

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

C

, C

ap

ac

ita

nc

(p

F

)

VGS   = 0V,       f = 1 MHZ

Ciss   = Cgs + Cgd,  C ds SHORTED
Crss   = Cgd 

Coss  = Cds + Cgd

Coss

Crss

Ciss

0

4

8

12

16

20

 QG,  Total Gate Charge (nC)

0

2

4

6

8

10

12

14

V

G

S

, G

at

e-

to

-S

ou

rc

V

ol

ta

ge

 (

V

)

VDS= 20V

VDS= 13V

VDS= 5.0V

ID= 15A

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

2.5V

≤60μs 

PULSE WIDTH 

Tj = 150°C 

VGS

TOP          

10V

4.50V

3.75V

3.50V

3.25V

3.00V
2.75V

BOTTOM

2.50V

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IRFH5255PbF

Fig 11.  Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)

Fig 8.  Maximum Safe Operating Area

Fig 9.  Maximum Drain Current Vs.

Case (Bottom) Temperature

Fig 7.  Typical Source-Drain Diode Forward Voltage

Fig 10.  Threshold Voltage Vs. Temperature

0.2

0.4

0.6

0.8

1.0

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

I S

D

, R

ev

er

se

 D

ra

in

 C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VGS = 0V

25

50

75

100

125

150

 TC , Case Temperature (°C)

0

5

10

15

20

25

30

35

40

45

50

55

I D

,   

D

ra

in

 C

ur

re

nt

 (

A

)

-75 -50 -25

0

25

50

75 100 125 150

TJ , Temperature ( °C )

0.5

1.0

1.5

2.0

2.5

3.0

V

G

S

(t

h)

,  G

at

th

re

sh

ol

V

ol

ta

ge

 (

V

)

ID = 1.0A

ID = 1.0mA

ID = 150μA

ID = 25μA

1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

T

he

rm

al

 R

es

po

ns

Z

 th

JC

 )

 °

C

/W

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0

1

10

100

VDS, Drain-to-Source Voltage (V)

1

10

100

I D

,  

D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

OPERATION IN THIS AREA LIMITED 

BY RDS(on)

Tc = 25°C

Tj = 150°C

Single Pulse

100μsec

1msec

10msec

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IRFH5255PbF

Fig 13.  Maximum Avalanche Energy vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

Fig 14b.  Unclamped Inductive Waveforms

Fig 14a.  Unclamped Inductive Test Circuit

tp

V

(BR)DSS

I

AS

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

Fig 15a.  Switching Time Test Circuit

Fig 15b.  Switching Time Waveforms

V

GS

V

DS

90%

10%

t

d(on)

t

d(off)

t

r

t

f

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1

R

D

V

GS

R

G

D.U.T.

10V

+

-

V

DD

V

GS

2

4

6

8

10

12

14

16

18

20

VGS, Gate -to -Source Voltage  (V)

0

5

10

15

20

R

D

S

(o

n)

,  

D

ra

in

-t

-S

ou

rc

O

R

es

is

ta

nc

(m

Ω

)

ID = 15A

TJ = 25°C

TJ = 125°C

25

50

75

100

125

150

Starting TJ , Junction Temperature (°C)

0

25

50

75

100

125

150

175

200

225

E

A

S

 , 

S

in

gl

P

ul

se

 A

va

la

nc

he

 E

ne

rg

(m

J)

ID

TOP         4.13A
                8.40A
BOTTOM    15A

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IRFH5255PbF

Fig 16. 

Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET

®

 Power MOSFETs

Fig 17.  Gate Charge Test Circuit

Fig 18.   Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Circuit Layout Considerations

   •  Low Stray Inductance

   •  Ground Plane

   •  Low Leakage Inductance

      Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple 

≤ 5%

Body Diode  Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

V

GS

=10V

V

DD

I

SD

Driver Gate Drive

D.U.T. I

SD

Waveform

D.U.T. V

DS

Waveform

Inductor Curent

D = 

P.W.

Period

*

 V

GS

 = 5V for Logic Level Devices

*

+

-

+

+

+

-

-

-

ƒ

„

‚

R

G

V

DD

•  dv/dt controlled by R

G

•  Driver same type as D.U.T.

•  I

SD

 controlled by Duty Factor "D"

•  D.U.T. - Device Under Test

D.U.T



1K

VCC

DUT

0

L

S

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IRFH5255PbF

PQFN 5x6 Outline "B" Package Details

Note: For the most current drawing please refer to IR website at:

 http://www.irf.com/package/

PQFN 5x6 Part Marking

XXXX

XYWWX

XXXXX

INTERNATIONAL

RECTIFIER LOGO

PART NUMBER

(“4 or 5 digits”)

MARKING CODE

(Per Marking Spec)

ASSEMBLY
SITE CODE

(Per SCOP 200-002)

DATE CODE

PIN 1

IDENTIFIER

LOT CODE

(Eng Mode - Min last 4 digits of EATI#)

(Prod Mode - 4 digits of SPN code)

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:

http://www.irf.com/technical-info/appnotes/an-1136.pdf

For more information on package inspection techniques, please refer to application note AN-1154:

http://www.irf.com/technical-info/appnotes/an-1154.pdf

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IRFH5255PbF

PQFN 5x6 Tape and Reel

Bo

W

P 1

Ao

Ko

CODE

TAPE DIMENSIONS

REEL DIMENSIONS

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE 

Dimension design to accommodate the component width

Dimension design to accommodate the component lenght
Dimension design to accommodate the component thicknes s

Pitch between s ucces sive cavity centers

Overall width of the carrier tape

DESCRIPTION

Type

Package

5 X 6 PQFN

Note:  All dimens ion are nominal

Diameter

Reel

QTY

Width

Reel

(mm)

Ao

(mm)

Bo

(mm)

Ko

(mm)

P1

(mm)

W

Quadrant

Pin 1

(Inch)

W1

(mm)

13

4000

12.4

6.300

5.300

1.20

8.00

12

Q1

Note: For the most current drawing please refer to IR website at:

 http://www.irf.com/package/

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IRFH5255PbF

†

        Qualification standards can be found at International Rectifier’s web site

            http://www.irf.com/product-info/reliability

††

      Higher qualification ratings may be available should the user have such requirements.

            Please contact your International Rectifier sales representative for further information:

           http://www.irf.com/whoto-call/salesrep/

†††

 

   Applicable version of JEDEC standard at the time of product release.

Notes:



 Repetitive rating;  pulse width limited by max. junction temperature.

‚

  Starting T

= 25°C, L = 0.47mH, R

= 50

Ω, I

AS 

= 15A.

ƒ

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

„

 R

θ 

is measured at 

T

J

 of approximately 90°C.

…

 

When mounted on 1 inch square  2 oz copper pad on 1.5x1.5 in. board of FR-4 material.

MS L1

(per JE DEC J-S T D-020D

††† 

)

RoHS compliant

Yes

PQFN 5mm x 6mm

Qualification information

Moisture Sensitivity Level

Qualification level

Industrial

††

(per JE DEC JES D47F

 ††† 

guidelines )

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit 

http://www.irf.com/whoto-call/

Date

Comments

• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option  (EOL notice #259)
• Updated data sheet with new IR corporate template

3/17/2015

• Updated package outline and tape and reel on pages 7 and 8.

Revision History 

12/16/2013

Maker
Infineon Technologies