IRFH5104PbF Product Datasheet

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background image

HEXFET

®

 Power MOSFET

Notes

  through 

†

 are on page 9

Features and Benefits

Applications

•  

Secondary Side Synchronous Rectification

•  

Inverters for DC Motors

•  

DC-DC Brick Applications

•  

Boost Converters

PQFN 5X6 mm

Absolute Maximum Ratings

Parameter

Units

V

DS

Drain-to-Source Voltage

V

GS

Gate-to-Source Voltage

I

D

 @ T

A

 = 25°C

Continuous Drain Current, V

GS

 @ 10V

I

D

 @ T

A

 = 70°C

Continuous Drain Current, V

GS

 @ 10V

I

D

 @ T

C(Bottom)

 = 25°C

Continuous Drain Current, V

GS

 @ 10V 

h

I

D

 @ T

C(Bottom)

 = 100°C

Continuous Drain Current, V

GS

 @ 10V 

I

DM

Pulsed Drain Current 

c

P

D

 @T

A

 = 25°C

Power Dissipation g

P

D

 @ T

C(Bottom)

 = 25°C

Power Dissipation 

g

Linear Derating Factor g

W/°C

T

Operating Junction and

T

STG

Storage Temperature Range

V

W

A

°C

Max.

24

86

400

 ±20

40

19

100

-55  to + 150

3.6

0.029

114

V

DS

40

V

R

DS(on) max 

(@V

GS

 = 10V)

3.5

m

Ω

Q

g (typical)

53

nC

R

G (typical)

1.4

Ω

I

(@T

c(Bottom)

 = 25°C)

100h

A

Features

Benefits

Low R

DSon 

(

≤ 3.5mΩ)

Lower Conduction Losses

Low Thermal Resistance to PCB (

≤ 1.1°C/W)

Enables better thermal dissipation 

100% Rg tested

Increased Reliability

Low Profile (

≤ 0.9 mm)        

results in Increased Power Density

Industry-Standard Pinout    

Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques 

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen 

Environmentally Friendlier

MSL1, Industrial Qualification  

Increased Reliability

IRFH5104PbF

1

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Note

Form

Quantity

IRFH5104TRPBF

PQFN 5mm x 6mm

Tape and Reel

4000

IRFH5104TR2PBF

PQFN 5mm x 6mm

Tape and Reel

1000

EOL notice #259

Orderable part number

Package Type

Standard Pack

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IRFH5104PbF

S

D

G

Thermal Resistance

Parameter

Typ.

Max.

Units

R

θJC

 (Bottom)

Junction-to-Case f

–––

1.1

R

θJC

 (Top)

Junction-to-Case 

f

–––

15

°C/W

R

θJA 

Junction-to-Ambient g

–––

35

R

θJA

 (<10s)

Junction-to-Ambient 

g

–––

22

Static @ T

J

 = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

BV

DSS

Drain-to-Source Breakdown Voltage

40

–––

–––

V

ΔΒV

DSS

/ΔT

Breakdown Voltage Temp. Coefficient

–––

0.05

–––

V/°C

R

DS(on)

Static Drain-to-Source On-Resistance

–––

2.9

3.5

V

GS(th)

Gate Threshold Voltage

2.0

–––

4.0

V

ΔV

GS(th)

Gate Threshold Voltage Coefficient

–––

-8.9

––– mV/°C

I

DSS

Drain-to-Source Leakage Current

–––

–––

20

–––

–––

250

I

GSS

Gate-to-Source Forward Leakage

–––

–––

100

Gate-to-Source Reverse Leakage

–––

–––

-100

gfs

Forward Transconductance

56

–––

–––

S

Q

g

Total Gate Charge 

–––

53

80

Q

gs1

Pre-Vth Gate-to-Source Charge

–––

10

–––

Q

gs2

Post-Vth Gate-to-Source Charge

–––

4.8

–––

Q

gd

Gate-to-Drain Charge

–––

19

–––

Q

godr

Gate Charge Overdrive

–––

19.2

–––

See Fig.17 & 18

Q

sw

Switch Charge (Q

gs2

 + Q

gd

)

–––

23.8

–––

Q

oss

Output Charge

–––

22

–––

nC

R

G

Gate Resistance

–––

1.4

–––

Ω

t

d(on)

Turn-On Delay Time

–––

9.5

–––

t

r

Rise Time

–––

15

–––

t

d(off)

Turn-Off Delay Time

–––

20

–––

t

f

Fall Time

–––

10

–––

C

iss

Input Capacitance

–––

3120

–––

C

oss

Output Capacitance

–––

650

–––

C

rss

Reverse Transfer Capacitance

–––

310

–––

Avalanche Characteristics

Parameter

Units

E

AS

Single Pulse Avalanche Energy d

mJ

I

AR

Avalanche Current 

c

A

Diode Characteristics

        Parameter

Min.

Typ.

Max. Units

I

S

Continuous Source Current 
(Body Diode) h

I

SM

Pulsed Source Current
(Body Diode)c

V

SD

Diode Forward Voltage

–––

–––

1.3

V

t

rr

Reverse Recovery Time

–––

31

47

ns

Q

rr

Reverse Recovery Charge

–––

130

195

nC

t

on

Forward Turn-On Time

Time is dominated by parasitic Inductance

V

DS

 = V

GS

, I

D

 = 100μA

A

100

–––

–––

400

–––

–––

nA

ns

pF

nC

Conditions

See Fig.15

Max.

120

50

ƒ = 1.0MHz

V

DS

 = 20V

–––

Conditions

V

GS

 = 0V, I

D

 = 250μA

Reference to 25°C, I

D

 = 1mA 

V

GS

 = 10V, I

D

 = 50A e

MOSFET symbol

V

DS

 = 16V, V

GS

 = 0V

V

DD

 = 20V, V

GS

 = 10V

I

D

 = 50A

V

GS

 = 0V

V

DS

 = 25V

V

GS

 = 20V

V

GS

 = -20V

V

DS

 = 40V, V

GS

 = 0V

T

J

 = 25°C, I

F

 = 50A, V

DD

 = 20V

di/dt = 500A/μs 

e

T

J

 = 25°C, I

S

 = 50A, V

GS

 = 0V 

e

showing  the
integral reverse
p-n junction diode.

V

GS

 = 10V 

Typ.

–––

R

G

=1.7Ω

V

DS

 = 15V, I

D

 = 50A

V

DS

 = 40V, V

GS

 = 0V, T

J

 = 125°C

m

Ω

μA

I

D

 = 50A

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IRFH5104PbF

Fig 4.  Normalized On-Resistance vs. Temperature

Fig 2.  Typical Output Characteristics

Fig 1.  Typical Output Characteristics

Fig 3.  Typical Transfer Characteristics

Fig 6.  Typical Gate Charge vs.Gate-to-Source Voltage

Fig 5.  Typical Capacitance vs.Drain-to-Source Voltage

0.1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

VGS

TOP          

10V
8.0V

7.0V

6.0V

5.5V

5.0V

4.8V

BOTTOM

4.5V

≤60μs PULSE WIDTH

Tj = 25°C

4.5V

0.1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

4.5V

≤60μs PULSE WIDTH

Tj = 150°C

VGS

TOP          

10V

8.0V
7.0V

6.0V

5.5V

5.0V

4.8V

BOTTOM

4.5V

3

4

5

6

7

8

9

10

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VDS = 15V
≤60μs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

R

D

S

(o

n)

 ,

 D

ra

in

-t

o-

S

ou

rc

O

R

es

is

ta

nc

   

   

   

   

   

   

   

 (

N

or

m

al

iz

ed

)

ID = 50A

VGS = 10V

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C

, C

ap

ac

ita

nc

(p

F

)

VGS   = 0V,       f = 1 MHZ

Ciss   = Cgs + Cgd,  C ds SHORTED

Crss   = Cgd 
Coss  = Cds + Cgd

Coss

Crss

Ciss

0

10

20

30

40

50

60

70

 QG,  Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

V

G

S

, G

at

e-

to

-S

ou

rc

V

ol

ta

ge

 (

V

)

VDS= 32V

VDS= 20V

VDS= 8.0V

ID= 50A

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IRFH5104PbF

Fig 11.  Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)

Fig 8.  Maximum Safe Operating Area

Fig 9.  Maximum Drain Current vs.

Case (Bottom) Temperature

Fig 7.  Typical Source-Drain Diode Forward Voltage

Fig 10.  Threshold Voltage vs. Temperature

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VSD, Source-to-Drain Voltage (V)

1.0

10

100

1000

I S

D

, R

ev

er

se

 D

ra

in

 C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VGS = 0V

0

1

10

100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

I D

,  

D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

OPERATION IN THIS AREA 
LIMITED BY R DS(on)

Tc = 25°C

Tj = 150°C

Single Pulse

100μsec

1msec

10msec

DC

25

50

75

100

125

150

 TC , Case Temperature (°C)

0

25

50

75

100

125

150

I D

,   

D

ra

in

 C

ur

re

nt

 (

A

)

Limited By Package

-75 -50 -25

0

25

50

75 100 125 150

TJ , Temperature ( °C )

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

V

G

S

(t

h)

,  G

at

th

re

sh

ol

V

ol

ta

ge

 (

V

)

ID = 100μA

ID = 500μA

ID = 1.0mA

ID = 1.0A

1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

T

he

rm

al

 R

es

po

ns

Z

 th

JC

 )

 °

C

/W

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

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IRFH5104PbF

Fig 13.  Maximum Avalanche Energy vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

Fig 14b.  Unclamped Inductive Waveforms

Fig 14a.  Unclamped Inductive Test Circuit

tp

V

(BR)DSS

I

AS

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

Fig 15a.  Switching Time Test Circuit

Fig 15b.  Switching Time Waveforms

V

GS

V

DS

90%

10%

t

d(on)

t

d(off)

t

r

t

f

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1

R

D

V

GS

R

G

D.U.T.

10V

+

-

V

DD

V

GS

4

6

8

10

12

14

16

18

20

VGS, Gate -to -Source Voltage  (V)

0

2

4

6

8

10

R

D

S

(o

n)

,  

D

ra

in

-t

-S

ou

rc

O

R

es

is

ta

nc

(m

Ω

)

ID = 50A

TJ = 25°C

TJ = 125°C

25

50

75

100

125

150

Starting TJ , Junction Temperature (°C)

0

100

200

300

400

500

E

A

S

 , 

S

in

gl

P

ul

se

 A

va

la

nc

he

 E

ne

rg

(m

J)

ID

TOP         8.3A

19A

BOTTOM 50A

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IRFH5104PbF

Fig 16. 

Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET

®

 Power MOSFETs

Fig 17.  Gate Charge Test Circuit

Fig 18.   Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Circuit Layout Considerations

   •  Low Stray Inductance

   •  Ground Plane

   •  Low Leakage Inductance

      Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple 

≤ 5%

Body Diode  Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

V

GS

=10V

V

DD

I

SD

Driver Gate Drive

D.U.T. I

SD

Waveform

D.U.T. V

DS

Waveform

Inductor Curent

D = 

P.W.

Period

*

 V

GS

 = 5V for Logic Level Devices

*

+

-

+

+

+

-

-

-

ƒ

„

‚

R

G

V

DD

•  dv/dt controlled by R

G

•  Driver same type as D.U.T.

•  I

SD

 controlled by Duty Factor "D"

•  D.U.T. - Device Under Test

D.U.T



1K

VCC

DUT

0

L

S

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IRFH5104PbF

Note: For the most current drawing please refer to IR website at: 

http://www.irf.com/package/

XXXX

XYWWX

XXXXX

INTERNATIONAL

RECTIFIER LOGO

PART NUMBER

MARKING CODE

(Per Marking Spec)

ASSEMBLY
SITE CODE

(Per SCOP 200-002)

DATE CODE

PIN 1

IDENTIFIER

LOT CODE

(Eng Mode - Min last 4 digits of EATI#)

(Prod Mode - 4 digits of SPN code)

PQFN 5x6 Outline "B" Package Details

PQFN 5x6 Part Marking

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: 

http://www.irf.com/technical-info/appnotes/an-1136.pdf

For more information on package inspection techniques, please refer to application note AN-1154:

http://www.irf.com/technical-info/appnotes/an-1154.pdf

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IRFH5104PbF

PQFN 5x6 Tape and Reel

Bo

W

P 1

Ao

Ko

CODE

TAPE DIMENSIONS

REEL DIMENSIONS

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE 

Dimension design to accommodate the component width

Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness

Pitch between successive cavity centers

Overall width of the carrier tape

DESCRIPTION

Type

Package

5 X 6 PQFN

Note:  All dimension are nominal

Diameter

Reel

QTY

Width

Reel

(mm)

Ao

(mm)

Bo

(mm)

Ko

(mm)

P1

(mm)

W

Quadrant

Pin 1

(Inch)

W1

(mm)

13

4000

12.4

6.300

5.300

1.20

8.00

12

Q1

Note: For the most current drawing please refer to IR website at:

 http://www.irf.com/package/

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IRFH5104PbF

†

        Qualification standards can be found at International Rectifier’s web site

            http://www.irf.com/product-info/reliability

††

      Higher qualification ratings may be available should the user have such requirements.

            Please contact your International Rectifier sales representative for further information:

           http://www.irf.com/whoto-call/salesrep/

†††

 

   Applicable version of JEDEC standard at the time of product release.

Notes:



 Repetitive rating;  pulse width limited by max. junction temperature.

‚

  Starting T

= 25°C, L = 0.098mH, R

= 25

Ω, I

AS 

= 50A.

ƒ

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

„

 R

θ 

is measured at T

J

 of approximately 90°C.

…

 

When mounted on 1 inch square  2 oz copper pad on 1.5x1.5 in. board of FR-4 material.

†

 Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test

capability.

MS L1

(per JE DEC J-S T D-020D

††† 

)

RoHS compliant

Yes

PQFN 5mm x 6mm

Qualification information

Moisture Sensitivity Level

Qualification level

Industrial

††

(per JE DEC JES D47F

 ††† 

guidelines )

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit 

http://www.irf.com/whoto-call/

Revision History

Date

Comment

12/16/2013

• Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259).
• Updated data sheet with the new IR corporate template.

3/16/2015

• Updated package outline and tape and reel on pages 7 and 8.

Maker
Infineon Technologies