IRFH5007PbF Product Datasheet

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HEXFET

®

 Power MOSFET

Notes

  through 

†

 are on page 9

Features and Benefits

Applications

•  

Secondary Side Synchronous Rectification

•  

Inverters for DC Motors

•  

DC-DC Brick Applications

•  

Boost Converters

Features

Benefits

PQFN 5X6 mm

V

DS

75

V

R

DS(on) max 

(@V

GS

 = 10V)

5.9

m

Ω

Q

g (typical)

65

nC

R

G (typical)

1.2

Ω

I

(@T

mb 

= 25°C)

100

h

A

Low R

DSon 

(

≤ 5.9mΩ)

Lower Conduction Losses

Low Thermal Resistance to PCB (

≤ 0.8°C/W)

Enables Better Thermal Dissipation 

100% Rg tested

Increased Reliability

Low Profile (

≤ 0.9 mm)        

results in Increased Power Density

Industry-Standard Pinout    

Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques 

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen 

Environmentally Friendlier

MSL1, Industrial Qualification  

Increased Reliability

Absolute Maximum Ratings

Parameter

Units

V

DS

Drain-to-Source Voltage

V

GS

Gate-to-Source Voltage

I

D

 @ T

A

 = 25°C

Continuous Drain Current, V

GS

 @ 10V

I

D

 @ T

A

 = 70°C

Continuous Drain Current, V

GS

 @ 10V

I

D

 @ T

mb

 = 25°C

Continuous Drain Current, V

GS

 @ 10V 

I

D

 @ T

mb

 = 100°C

Continuous Drain Current, V

GS

 @ 10V 

I

DM

Pulsed Drain Current 

c

P

D

 @T

A

 = 25°C

Power Dissipation 

g

P

D

 @ T

mb

 = 25°C

Power Dissipation 

g

Linear Derating Factor 

g

W/°C

T

Operating Junction and

T

STG

Storage Temperature Range

13

100

h

-55  to + 150

3.6

0.029

156

V

W

A

°C

Max.

17

88

400

 ±20

75

IRFH5007PbF

Form

Quantity

IRFH5007PBF

PQFN 5mm x 6mm

Tape and Reel

4000

IRFH5007TRPBF

Base Part Number

Package Type

Standard Pack

Orderable Part Number

1

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© 

2015 International Rectifier   

              Submit Datasheet Feedback

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IRFH5007PbF

   

2

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                                May 19, 2015

S

D

G

Static @ T

J

 = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

BV

DSS

Drain-to-Source Breakdown Voltage

75

–––

–––

V

ΔΒV

DSS

/ΔT

Breakdown Voltage Temp. Coefficient

–––

0.09

–––

V/°C

R

DS(on)

Static Drain-to-Source On-Resistance

–––

5.1

5.9

V

GS(th)

Gate Threshold Voltage

2.0

–––

4.0

V

ΔV

GS(th)

Gate Threshold Voltage Coefficient

–––

-8.4

––– mV/°C

I

DSS

Drain-to-Source Leakage Current

–––

–––

20

–––

–––

250

I

GSS

Gate-to-Source Forward Leakage

–––

–––

100

Gate-to-Source Reverse Leakage

–––

–––

-100

gfs

Forward Transconductance

100

–––

–––

S

Q

g

Total Gate Charge 

–––

65

98

Q

gs1

Pre-Vth Gate-to-Source Charge

–––

11

–––

Q

gs2

Post-Vth Gate-to-Source Charge

–––

4.5

–––

Q

gd

Gate-to-Drain Charge

–––

20

–––

Q

godr

Gate Charge Overdrive

–––

29.5

–––

See Fig.17 & 18

Q

sw

Switch Charge (Q

gs2

 + Q

gd

)

–––

24.5

–––

Q

oss

Output Charge

–––

21

–––

nC

R

G

Gate Resistance

–––

1.2

–––

Ω

t

d(on)

Turn-On Delay Time

–––

10

–––

t

r

Rise Time

–––

14

–––

t

d(off)

Turn-Off Delay Time

–––

30

–––

t

f

Fall Time

–––

11

–––

C

iss

Input Capacitance

–––

4290

–––

C

oss

Output Capacitance

–––

510

–––

C

rss

Reverse Transfer Capacitance

–––

210

–––

Avalanche Characteristics

Parameter

Units

E

AS

Single Pulse Avalanche Energy d

mJ

I

AR

Avalanche Current 

c

A

Diode Characteristics

        Parameter

Min.

Typ.

Max. Units

I

S

Continuous Source Current 
(Body Diode) h

I

SM

Pulsed Source Current
(Body Diode)c

V

SD

Diode Forward Voltage

–––

–––

1.3

V

t

rr

Reverse Recovery Time

–––

31

47

ns

Q

rr

Reverse Recovery Charge

–––

170

255

nC

t

on

Forward Turn-On Time

Time is dominated by parasitic Inductance

V

DS

 = V

GS

, I

D

 = 150μA

A

100

–––

–––

400

–––

–––

nA

ns

pF

nC

Conditions

See Fig.15

Max.

250

50

ƒ = 1.0MHz

V

DS

 = 38V

–––

Conditions

V

GS

 = 0V, I

D

 = 250μA

Reference to 25°C, I

D

 = 1mA 

V

GS

 = 10V, I

D

 = 50A e

MOSFET symbol

V

DS

 = 16V, V

GS

 = 0V

V

DD

 = 38V, V

GS

 = 10V

I

D

 = 50A

V

GS

 = 0V

V

DS

 = 25V

V

GS

 = 20V

V

GS

 = -20V

V

DS

 = 75V, V

GS

 = 0V

T

J

 = 25°C, I

F

 = 50A, V

DD

 = 38V

di/dt = 500A/μs 

e

T

J

 = 25°C, I

S

 = 50A, V

GS

 = 0V 

e

showing  the
integral reverse
p-n junction diode.

V

GS

 = 10V 

Typ.

–––

R

G

=1.8Ω

V

DS

 = 15V, I

D

 = 50A

V

DS

 = 75V, V

GS

 = 0V, T

J

 = 125°C

m

Ω

μA

I

D

 = 50A

Thermal Resistance

Parameter

Typ.

Max.

Units

R

θJC-mb

Junction-to-Mounting Base 

0.5

0.8

R

θJC

 (Top)

Junction-to-Case 

f

–––

15

°C/W

R

θJA 

Junction-to-Ambient 

g

–––

35

R

θJA

 (<10s)

Junction-to-Ambient 

g

–––

22

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IRFH5007PbF

 3     

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Fig 4.  Normalized On-Resistance vs. Temperature

Fig 2.  Typical Output Characteristics

Fig 1.  Typical Output Characteristics

Fig 3.  Typical Transfer Characteristics

Fig 6.  Typical Gate Charge vs.Gate-to-Source Voltage

Fig 5.  Typical Capacitance vs.Drain-to-Source Voltage

2

3

4

5

6

7

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VDS = 25V
≤60μs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

R

D

S

(o

n)

 ,

 D

ra

in

-t

o-

S

ou

rc

O

R

es

is

ta

nc

   

   

   

   

   

   

   

 (

N

or

m

al

iz

ed

)

ID = 50A

VGS = 10V

0.1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

VGS

TOP          

10V
8.0V

6.0V

5.0V

4.5V

4.25V

4.0V

BOTTOM

3.75V

≤60μs PULSE WIDTH

Tj = 25°C

3.75V

0.1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

3.75V

≤60μs PULSE WIDTH

Tj = 150°C

VGS

TOP          

10V

8.0V
6.0V

5.0V

4.5V

4.25V

4.0V

BOTTOM

3.75V

0

20

40

60

80

100

 QG,  Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

V

G

S

, G

at

e-

to

-S

ou

rc

V

ol

ta

ge

 (

V

)

VDS= 60V

VDS= 38V

VDS= 15V

ID= 50A

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C

, C

ap

ac

ita

nc

(p

F

)

VGS   = 0V,       f = 1 MHZ

Ciss   = Cgs + Cgd,  C ds SHORTED
Crss   = Cgd 

Coss  = Cds + Cgd

Coss

Crss

Ciss

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IRFH5007PbF

   

4

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Fig 11.  Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base

Fig 8.  Maximum Safe Operating Area

Fig 9.  Maximum Drain Current vs.

Case Temperature

Fig 7.  Typical Source-Drain Diode Forward Voltage

Fig 10.  Threshold Voltage vs. Temperature

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

1000

I S

D

, R

ev

er

se

 D

ra

in

 C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VGS = 0V

-75 -50 -25

0

25

50

75 100 125 150

TJ , Temperature ( °C )

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V

G

S

(t

h)

,  G

at

th

re

sh

ol

V

ol

ta

ge

 (

V

)

ID = 150μA

ID = 500μA

ID = 1.0mA

ID = 1.0A

25

50

75

100

125

150

 TC , Case Temperature (°C)

0

20

40

60

80

100

120

I D

,   

D

ra

in

 C

ur

re

nt

 (

A

)

Limited By Package

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

10000

I D

,  

D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

Tc = 25°C

Tj = 150°C

Single Pulse

10msec

1msec

OPERATION IN THIS AREA 

LIMITED BY R DS(on)

100μsec

DC

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

T

he

rm

al

 R

es

po

ns

Z

 th

JC

 )

 °

C

/W

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

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IRFH5007PbF

 5     

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Fig 13.  Maximum Avalanche Energy vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

4

6

8

10

12

14

16

18

20

VGS, Gate -to -Source Voltage  (V)

2

4

6

8

10

12

14

16

R

D

S

(o

n)

,  

D

ra

in

-t

-S

ou

rc

O

R

es

is

ta

nc

(m

Ω

)

ID = 50A

TJ = 25°C

TJ = 125°C

25

50

75

100

125

150

Starting TJ , Junction Temperature (°C)

0

100

200

300

400

500

600

700

800

900

1000

1100

E

A

S

 , 

S

in

gl

P

ul

se

 A

va

la

nc

he

 E

ne

rg

(m

J)

ID

TOP         6.6A

13A

BOTTOM 50A

Fig 14. Typical Avalanche Current vs.  Pulsewidth

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

0.1

1

10

100

1000

A

va

la

nc

he

 C

ur

re

nt

 (

A

)

Allowed avalanche Current vs avalanche 
pulsewidth, tav, assuming 

ΔΤ j = 25°C and 

Tstart = 125°C.

Allowed avalanche Current vs avalanche 
pulsewidth, tav, assuming 

ΔTj = 125°C and 

Tstart =25°C (Single Pulse)

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IRFH5007PbF

   

6

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2015 International Rectifier   

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Fig 15. 

Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET

®

 Power MOSFETs

Fig 18a.  Gate Charge Test Circuit

Fig 18b.   Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Fig 16b.  Unclamped Inductive Waveforms

Fig 16a.  Unclamped Inductive Test Circuit

tp

V

(BR)DSS

I

AS

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

Fig 17a.  Switching Time Test Circuit

Fig 17b.  Switching Time Waveforms

V

GS

V

DS

90%

10%

t

d(on)

t

d(off)

t

r

t

f

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1

R

D

V

GS

R

G

D.U.T.

10V

+

-

V

DD

V

GS

Circuit Layout Considerations

   •  Low Stray Inductance

   •  Ground Plane

   •  Low Leakage Inductance

      Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple 

≤ 5%

Body Diode  Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

V

GS

=10V

V

DD

I

SD

Driver Gate Drive

D.U.T. I

SD

Waveform

D.U.T. V

DS

Waveform

Inductor Curent

D = 

P.W.

Period

*

 V

GS

 = 5V for Logic Level Devices

*

+

-

+

+

+

-

-

-

ƒ

„

‚

R

G

V

DD

•  dv/dt controlled by R

G

•  Driver same type as D.U.T.

•  I

SD

 controlled by Duty Factor "D"

•  D.U.T. - Device Under Test

D.U.T



1K

VCC

DUT

0

L

s

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IRFH5007PbF

 7     

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Note: For the most current drawing please refer to IR website at: 

http://www.irf.com/package/

PQFN 5x6 Outline "B" Package Details

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: 

http://www.irf.com/technical-info/appnotes/an-1136.pdf

For more information on package inspection techniques, please refer to application note AN-1154:

http://www.irf.com/technical-info/appnotes/an-1154.pdf

PQFN 5x6 Outline "G" Package Details

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IRFH5007PbF

   

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                                May 19, 2015

PQFN 5x6 Tape and Reel

Bo

W

P1

Ao

Ko

CODE

TAPE DIMENSIONS

REEL DIMENSIONS

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE 

Dimension design to accommodate the component width

Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness

Pitch between successive cavity centers

Overall width of the carrier tape

DES CRIPT ION

Type

Package

5 X 6 PQFN

Note:  All dimension are nominal

Diameter

Reel

QTY

Width

Reel

(mm)

Ao

(mm)

Bo

(mm)

Ko

(mm)

P1

(mm)

W

Quadrant

Pin 1

(Inch)

W1

(mm)

13

4000

12.4

6.300

5.300

1.20

8.00

12

Q1

Note: For the most current drawing please refer to IR website at:

 http://www.irf.com/package/

XXXX

XYWWX

XXXXX

INTERNATIONAL

RECTIFIER LOGO

PART NUMBER

MARKING CODE

(Per Marking Spec)

ASSEMBLY
SITE CODE

(Per SCOP 200-002)

DATE CODE

PIN 1

IDENTIFIER

LOT CODE

(Eng Mode - Min last 4 digits of EATI#)

(Prod Mode - 4 digits of SPN code)

PQFN 5x6 Part Marking

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†

Qualification standards can be found at International Rectifier’s web site

  http://www.irf.com/product-info/reliability

††

Applicable version of JEDEC standard at the time of product release.

Notes:



Repetitive rating;  pulse width limited by max. junction temperature.

‚

Starting T

= 25°C, L = 0.20mH, R

= 25

Ω, I

AS 

= 50A.

ƒ

Pulse width 

≤ 400μs; duty cycle ≤ 2%.

„

R

θ 

is measured at T

J

 of approximately 90°C.

…

When mounted on 1 inch square  2 oz copper pad on 1.5x1.5 in. board of FR-4 material.

†

Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test
capability.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit 

http://www.irf.com/whoto-call/

MS L

1

(per JEDEC J-S T D-020D

†† 

)

RoHS compliant

Yes

PQFN 5mm x 6mm

Qualification information

Moisture Sensitivity Level

Qualification level

Industrial

(per JEDEC JES D47F

 †† 

guidelines )

Revision History

Date

Comment

• Updated package outline for “option B” and  added package outline for “option G” on page 7 
• Updated tape and reel on page 8.
• Updated package outline for “option G” on page 7.
• Updated "IFX logo" on page 1 and page 9.

4/28/2015

5/19/2015

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background image

HEXFET

®

 Power MOSFET

Notes

  through 

†

 are on page 9

Features and Benefits

Applications

•  

Secondary Side Synchronous Rectification

•  

Inverters for DC Motors

•  

DC-DC Brick Applications

•  

Boost Converters

Features

Benefits

PQFN 5X6 mm

V

DS

75

V

R

DS(on) max 

(@V

GS

 = 10V)

5.9

m

Ω

Q

g (typical)

65

nC

R

G (typical)

1.2

Ω

I

(@T

mb 

= 25°C)

100

h

A

Low R

DSon 

(

≤ 5.9mΩ)

Lower Conduction Losses

Low Thermal Resistance to PCB (

≤ 0.8°C/W)

Enables Better Thermal Dissipation 

100% Rg tested

Increased Reliability

Low Profile (

≤ 0.9 mm)        

results in Increased Power Density

Industry-Standard Pinout    

Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques 

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen 

Environmentally Friendlier

MSL1, Industrial Qualification  

Increased Reliability

Absolute Maximum Ratings

Parameter

Units

V

DS

Drain-to-Source Voltage

V

GS

Gate-to-Source Voltage

I

D

 @ T

A

 = 25°C

Continuous Drain Current, V

GS

 @ 10V

I

D

 @ T

A

 = 70°C

Continuous Drain Current, V

GS

 @ 10V

I

D

 @ T

mb

 = 25°C

Continuous Drain Current, V

GS

 @ 10V 

I

D

 @ T

mb

 = 100°C

Continuous Drain Current, V

GS

 @ 10V 

I

DM

Pulsed Drain Current 

c

P

D

 @T

A

 = 25°C

Power Dissipation 

g

P

D

 @ T

mb

 = 25°C

Power Dissipation 

g

Linear Derating Factor 

g

W/°C

T

Operating Junction and

T

STG

Storage Temperature Range

13

100

h

-55  to + 150

3.6

0.029

156

V

W

A

°C

Max.

17

88

400

 ±20

75

IRFH5007PbF

Form

Quantity

IRFH5007PBF

PQFN 5mm x 6mm

Tape and Reel

4000

IRFH5007TRPBF

Base Part Number

Package Type

Standard Pack

Orderable Part Number

1

           www.irf.com 

© 

2015 International Rectifier   

              Submit Datasheet Feedback

                                    May 19, 2015

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IRFH5007PbF

   

2

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© 

2015 International Rectifier   

              Submit Datasheet Feedback

                                May 19, 2015

S

D

G

Static @ T

J

 = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

BV

DSS

Drain-to-Source Breakdown Voltage

75

–––

–––

V

ΔΒV

DSS

/ΔT

Breakdown Voltage Temp. Coefficient

–––

0.09

–––

V/°C

R

DS(on)

Static Drain-to-Source On-Resistance

–––

5.1

5.9

V

GS(th)

Gate Threshold Voltage

2.0

–––

4.0

V

ΔV

GS(th)

Gate Threshold Voltage Coefficient

–––

-8.4

––– mV/°C

I

DSS

Drain-to-Source Leakage Current

–––

–––

20

–––

–––

250

I

GSS

Gate-to-Source Forward Leakage

–––

–––

100

Gate-to-Source Reverse Leakage

–––

–––

-100

gfs

Forward Transconductance

100

–––

–––

S

Q

g

Total Gate Charge 

–––

65

98

Q

gs1

Pre-Vth Gate-to-Source Charge

–––

11

–––

Q

gs2

Post-Vth Gate-to-Source Charge

–––

4.5

–––

Q

gd

Gate-to-Drain Charge

–––

20

–––

Q

godr

Gate Charge Overdrive

–––

29.5

–––

See Fig.17 & 18

Q

sw

Switch Charge (Q

gs2

 + Q

gd

)

–––

24.5

–––

Q

oss

Output Charge

–––

21

–––

nC

R

G

Gate Resistance

–––

1.2

–––

Ω

t

d(on)

Turn-On Delay Time

–––

10

–––

t

r

Rise Time

–––

14

–––

t

d(off)

Turn-Off Delay Time

–––

30

–––

t

f

Fall Time

–––

11

–––

C

iss

Input Capacitance

–––

4290

–––

C

oss

Output Capacitance

–––

510

–––

C

rss

Reverse Transfer Capacitance

–––

210

–––

Avalanche Characteristics

Parameter

Units

E

AS

Single Pulse Avalanche Energy d

mJ

I

AR

Avalanche Current 

c

A

Diode Characteristics

        Parameter

Min.

Typ.

Max. Units

I

S

Continuous Source Current 
(Body Diode) h

I

SM

Pulsed Source Current
(Body Diode)c

V

SD

Diode Forward Voltage

–––

–––

1.3

V

t

rr

Reverse Recovery Time

–––

31

47

ns

Q

rr

Reverse Recovery Charge

–––

170

255

nC

t

on

Forward Turn-On Time

Time is dominated by parasitic Inductance

V

DS

 = V

GS

, I

D

 = 150μA

A

100

–––

–––

400

–––

–––

nA

ns

pF

nC

Conditions

See Fig.15

Max.

250

50

ƒ = 1.0MHz

V

DS

 = 38V

–––

Conditions

V

GS

 = 0V, I

D

 = 250μA

Reference to 25°C, I

D

 = 1mA 

V

GS

 = 10V, I

D

 = 50A e

MOSFET symbol

V

DS

 = 16V, V

GS

 = 0V

V

DD

 = 38V, V

GS

 = 10V

I

D

 = 50A

V

GS

 = 0V

V

DS

 = 25V

V

GS

 = 20V

V

GS

 = -20V

V

DS

 = 75V, V

GS

 = 0V

T

J

 = 25°C, I

F

 = 50A, V

DD

 = 38V

di/dt = 500A/μs 

e

T

J

 = 25°C, I

S

 = 50A, V

GS

 = 0V 

e

showing  the
integral reverse
p-n junction diode.

V

GS

 = 10V 

Typ.

–––

R

G

=1.8Ω

V

DS

 = 15V, I

D

 = 50A

V

DS

 = 75V, V

GS

 = 0V, T

J

 = 125°C

m

Ω

μA

I

D

 = 50A

Thermal Resistance

Parameter

Typ.

Max.

Units

R

θJC-mb

Junction-to-Mounting Base 

0.5

0.8

R

θJC

 (Top)

Junction-to-Case 

f

–––

15

°C/W

R

θJA 

Junction-to-Ambient 

g

–––

35

R

θJA

 (<10s)

Junction-to-Ambient 

g

–––

22

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IRFH5007PbF

 3     

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© 

2015 International Rectifier   

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                               May 19, 2015

Fig 4.  Normalized On-Resistance vs. Temperature

Fig 2.  Typical Output Characteristics

Fig 1.  Typical Output Characteristics

Fig 3.  Typical Transfer Characteristics

Fig 6.  Typical Gate Charge vs.Gate-to-Source Voltage

Fig 5.  Typical Capacitance vs.Drain-to-Source Voltage

2

3

4

5

6

7

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VDS = 25V
≤60μs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

R

D

S

(o

n)

 ,

 D

ra

in

-t

o-

S

ou

rc

O

R

es

is

ta

nc

   

   

   

   

   

   

   

 (

N

or

m

al

iz

ed

)

ID = 50A

VGS = 10V

0.1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

VGS

TOP          

10V
8.0V

6.0V

5.0V

4.5V

4.25V

4.0V

BOTTOM

3.75V

≤60μs PULSE WIDTH

Tj = 25°C

3.75V

0.1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

3.75V

≤60μs PULSE WIDTH

Tj = 150°C

VGS

TOP          

10V

8.0V
6.0V

5.0V

4.5V

4.25V

4.0V

BOTTOM

3.75V

0

20

40

60

80

100

 QG,  Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

V

G

S

, G

at

e-

to

-S

ou

rc

V

ol

ta

ge

 (

V

)

VDS= 60V

VDS= 38V

VDS= 15V

ID= 50A

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C

, C

ap

ac

ita

nc

(p

F

)

VGS   = 0V,       f = 1 MHZ

Ciss   = Cgs + Cgd,  C ds SHORTED
Crss   = Cgd 

Coss  = Cds + Cgd

Coss

Crss

Ciss

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IRFH5007PbF

   

4

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2015 International Rectifier   

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Fig 11.  Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base

Fig 8.  Maximum Safe Operating Area

Fig 9.  Maximum Drain Current vs.

Case Temperature

Fig 7.  Typical Source-Drain Diode Forward Voltage

Fig 10.  Threshold Voltage vs. Temperature

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

1000

I S

D

, R

ev

er

se

 D

ra

in

 C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VGS = 0V

-75 -50 -25

0

25

50

75 100 125 150

TJ , Temperature ( °C )

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V

G

S

(t

h)

,  G

at

th

re

sh

ol

V

ol

ta

ge

 (

V

)

ID = 150μA

ID = 500μA

ID = 1.0mA

ID = 1.0A

25

50

75

100

125

150

 TC , Case Temperature (°C)

0

20

40

60

80

100

120

I D

,   

D

ra

in

 C

ur

re

nt

 (

A

)

Limited By Package

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

10000

I D

,  

D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

Tc = 25°C

Tj = 150°C

Single Pulse

10msec

1msec

OPERATION IN THIS AREA 

LIMITED BY R DS(on)

100μsec

DC

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

T

he

rm

al

 R

es

po

ns

Z

 th

JC

 )

 °

C

/W

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

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IRFH5007PbF

 5     

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Fig 13.  Maximum Avalanche Energy vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

4

6

8

10

12

14

16

18

20

VGS, Gate -to -Source Voltage  (V)

2

4

6

8

10

12

14

16

R

D

S

(o

n)

,  

D

ra

in

-t

-S

ou

rc

O

R

es

is

ta

nc

(m

Ω

)

ID = 50A

TJ = 25°C

TJ = 125°C

25

50

75

100

125

150

Starting TJ , Junction Temperature (°C)

0

100

200

300

400

500

600

700

800

900

1000

1100

E

A

S

 , 

S

in

gl

P

ul

se

 A

va

la

nc

he

 E

ne

rg

(m

J)

ID

TOP         6.6A

13A

BOTTOM 50A

Fig 14. Typical Avalanche Current vs.  Pulsewidth

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

0.1

1

10

100

1000

A

va

la

nc

he

 C

ur

re

nt

 (

A

)

Allowed avalanche Current vs avalanche 
pulsewidth, tav, assuming 

ΔΤ j = 25°C and 

Tstart = 125°C.

Allowed avalanche Current vs avalanche 
pulsewidth, tav, assuming 

ΔTj = 125°C and 

Tstart =25°C (Single Pulse)

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IRFH5007PbF

   

6

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2015 International Rectifier   

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                                May 19, 2015

Fig 15. 

Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET

®

 Power MOSFETs

Fig 18a.  Gate Charge Test Circuit

Fig 18b.   Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Fig 16b.  Unclamped Inductive Waveforms

Fig 16a.  Unclamped Inductive Test Circuit

tp

V

(BR)DSS

I

AS

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

Fig 17a.  Switching Time Test Circuit

Fig 17b.  Switching Time Waveforms

V

GS

V

DS

90%

10%

t

d(on)

t

d(off)

t

r

t

f

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1

R

D

V

GS

R

G

D.U.T.

10V

+

-

V

DD

V

GS

Circuit Layout Considerations

   •  Low Stray Inductance

   •  Ground Plane

   •  Low Leakage Inductance

      Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple 

≤ 5%

Body Diode  Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

V

GS

=10V

V

DD

I

SD

Driver Gate Drive

D.U.T. I

SD

Waveform

D.U.T. V

DS

Waveform

Inductor Curent

D = 

P.W.

Period

*

 V

GS

 = 5V for Logic Level Devices

*

+

-

+

+

+

-

-

-

ƒ

„

‚

R

G

V

DD

•  dv/dt controlled by R

G

•  Driver same type as D.U.T.

•  I

SD

 controlled by Duty Factor "D"

•  D.U.T. - Device Under Test

D.U.T



1K

VCC

DUT

0

L

s

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IRFH5007PbF

 7     

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Note: For the most current drawing please refer to IR website at: 

http://www.irf.com/package/

PQFN 5x6 Outline "B" Package Details

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: 

http://www.irf.com/technical-info/appnotes/an-1136.pdf

For more information on package inspection techniques, please refer to application note AN-1154:

http://www.irf.com/technical-info/appnotes/an-1154.pdf

PQFN 5x6 Outline "G" Package Details

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IRFH5007PbF

   

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                                May 19, 2015

PQFN 5x6 Tape and Reel

Bo

W

P1

Ao

Ko

CODE

TAPE DIMENSIONS

REEL DIMENSIONS

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE 

Dimension design to accommodate the component width

Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness

Pitch between successive cavity centers

Overall width of the carrier tape

DES CRIPT ION

Type

Package

5 X 6 PQFN

Note:  All dimension are nominal

Diameter

Reel

QTY

Width

Reel

(mm)

Ao

(mm)

Bo

(mm)

Ko

(mm)

P1

(mm)

W

Quadrant

Pin 1

(Inch)

W1

(mm)

13

4000

12.4

6.300

5.300

1.20

8.00

12

Q1

Note: For the most current drawing please refer to IR website at:

 http://www.irf.com/package/

XXXX

XYWWX

XXXXX

INTERNATIONAL

RECTIFIER LOGO

PART NUMBER

MARKING CODE

(Per Marking Spec)

ASSEMBLY
SITE CODE

(Per SCOP 200-002)

DATE CODE

PIN 1

IDENTIFIER

LOT CODE

(Eng Mode - Min last 4 digits of EATI#)

(Prod Mode - 4 digits of SPN code)

PQFN 5x6 Part Marking

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2015 International Rectifier   

              Submit Datasheet Feedback

                               May 19, 2015

†

Qualification standards can be found at International Rectifier’s web site

  http://www.irf.com/product-info/reliability

††

Applicable version of JEDEC standard at the time of product release.

Notes:



Repetitive rating;  pulse width limited by max. junction temperature.

‚

Starting T

= 25°C, L = 0.20mH, R

= 25

Ω, I

AS 

= 50A.

ƒ

Pulse width 

≤ 400μs; duty cycle ≤ 2%.

„

R

θ 

is measured at T

J

 of approximately 90°C.

…

When mounted on 1 inch square  2 oz copper pad on 1.5x1.5 in. board of FR-4 material.

†

Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test
capability.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit 

http://www.irf.com/whoto-call/

MS L

1

(per JEDEC J-S T D-020D

†† 

)

RoHS compliant

Yes

PQFN 5mm x 6mm

Qualification information

Moisture Sensitivity Level

Qualification level

Industrial

(per JEDEC JES D47F

 †† 

guidelines )

Revision History

Date

Comment

• Updated package outline for “option B” and  added package outline for “option G” on page 7 
• Updated tape and reel on page 8.
• Updated package outline for “option G” on page 7.
• Updated "IFX logo" on page 1 and page 9.

4/28/2015

5/19/2015

Maker
Infineon Technologies