1
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HEXFET
®
Power MOSFET
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
IRFH4213DPbF
PQFN 5mm x 6 mm
Tape and Reel
4000
IRFH4213DTRPbF
V
DSS
25
V
R
DS(on)
max
(@ V
GS
= 10V)
1.35
(@ V
GS
= 4.5V)
1.90
Qg
(typical)
25
nC
I
D
(@T
C (Bottom)
= 25°C)
100 A
m
PQFN 5X6 mm
Notes through are on page 8
Absolute Maximum Ratings
Parameter Max.
Units
V
GS
Gate-to-Source Voltage
± 20
V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
40
A
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V
208
I
D
@ T
C(Bottom)
= 100°C
Continuous Drain Current, V
GS
@ 10V
131
I
DM
Pulsed Drain Current 400
P
D
@T
A
= 25°C
Power Dissipation 3.6
W
P
D
@T
C(Bottom)
= 25°C
Power Dissipation
96
Linear Derating Factor 0.029
W/°C
T
J
Operating Junction and
-55 to + 150
°C
T
STG
Storage Temperature Range
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Source Bonding Technology Limited)
100
Applications
Synchronous Rectifier MOSFET for Synchronous Buck Converters
Features
Benefits
Low R
DSon
(<1.35m
)
Lower Conduction Losses
Low Thermal Resistance to PCB (<1.3°C/W)
Enable better thermal dissipation
Low Profile (<0.9 mm)
results in Increased Power Density
Industry-Standard Pinout
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant, Halogen-Free
Environmentally Friendlier
MSL1, Industrial Qualification
Increased Reliability
Schottky Intrinsic Diode with Low Forward Voltage
Lower Switching Losses
Fast
IR
FET™
IRFH4213DPbF
IRFH4213DPbF
2
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March 19, 2015
D
S
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
25
–––
–––
V
V
GS
= 0V, I
D
= 1.0mA
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
–––
21
––– mV/°C Reference to 25°C, I
D
= 10mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
1.10
1.35
m
V
GS
= 10V, I
D
= 50A
––– 1.50 1.90
V
GS
= 4.5V, I
D
= 50A
V
GS(th)
Gate Threshold Voltage
1.1
1.6
2.1
V
V
DS
= V
GS
, I
D
= 100µA
V
GS(th)
Gate Threshold Voltage Coefficient
–––
-4.5
––– mV/°C V
DS
= V
GS
, I
D
= 10mA
I
DSS
Drain-to-Source Leakage Current
–––
–––
250
µA V
DS
= 20V, V
GS
= 0V
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
V
GS
= -20V
gfs Forward
Transconductance
340
–––
–––
S
V
DS
= 10V, I
D
= 50A
Q
g
Total Gate Charge
–––
55
–––
nC V
GS
= 10V, V
DS
= 13V, I
D
= 50A
Q
g
Total Gate Charge
–––
25
38
Q
gs1
Pre-Vth Gate-to-Source Charge
–––
9.4
–––
V
DS
= 13V
Q
gs2
Post-Vth Gate-to-Source Charge
–––
4.1
–––
nC V
GS
= 4.5V
Q
gd
Gate-to-Drain Charge
–––
9.4
–––
I
D
= 50A
Q
godr
Gate Charge Overdrive
–––
2.1
–––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
) –––
13.5
–––
Q
oss
Output Charge
–––
27
–––
nC V
DS
= 16V, V
GS
= 0V
R
G
Gate Resistance
–––
1.5
–––
t
d(on)
Turn-On Delay Time
–––
14
–––
V
DD
= 13V, V
GS
= 4.5V
t
r
Rise Time
–––
30
–––
ns I
D
= 50A
t
d(off)
Turn-Off Delay Time
–––
18
–––
R
G
=2.0
t
f
Fall Time
–––
12
–––
C
iss
Input Capacitance
–––
3520
–––
V
GS
= 0V
C
oss
Output Capacitance
–––
1070
–––
pF V
DS
= 13V
C
rss
Reverse Transfer Capacitance
–––
250
–––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
Max.
E
AS
Single Pulse Avalanche Energy
–––
180
I
AR
Avalanche Current
–––
50
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
I
S
Continuous Source Current
––– –––
100
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 400
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
–––
0.8
V
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
t
rr
Reverse Recovery Time
–––
26
37
ns
T
J
= 25°C, I
F
= 50A, V
DD
= 13V
Q
rr
Reverse Recovery Charge
–––
35
53
nC di/dt = 260A/µs
Parameter Typ.
Max.
Units
R
JC
(Bottom) Junction-to-Case –––
1.3
R
JC
(Top)
Junction-to-Case –––
21
°C/W
R
JA
Junction-to-Ambient –––
35
R
JA
(<10s)
Junction-to-Ambient –––
21
Thermal Resistance
IRFH4213DPbF
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Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
60µs PULSE WIDTH
Tj = 25°C
2.5V
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.3V
2.8V
BOTTOM
2.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
60µs PULSE WIDTH
Tj = 150°C
2.5V
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.3V
2.8V
BOTTOM
2.5V
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o
-S
ou
rc
e
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 150°C
VDS = 15V
60µs PULSE WIDTH
-60 -40 -20
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
R
D
S
(o
n)
,
D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
N
or
m
al
iz
ed
)
ID = 50A
VGS = 10V
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
, C
ap
ac
ita
nc
e
(p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
10
20
30
40
50
60
70
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
14
V
G
S
, G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(
V
)
VDS= 20V
VDS= 13V
VDS= 5.0V
ID= 50A
IRFH4213DPbF
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Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I S
D
, R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 150°C
VGS = 0V
25
50
75
100
125
150
TC , Case Temperature (°C)
0
40
80
120
160
200
240
I D
,
D
ra
in
C
ur
re
nt
(
A
)
Limited By Package
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
he
rma
l R
es
po
ns
e
(
Z
th
JC
)
°
C
/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1
10
100
VDS, Drain-toSource Voltage (V)
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
100µsec
DC
L
imited by
Package
OPERATION IN THIS AREA
LIMITED BY RDS(on)
-75
-50
-25
0
25
50
75
100 125 150
TJ , Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
2.5
V
G
S
(t
h)
G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(
V
)
ID = 100µA
ID = 250µA
ID = 1.0mA
ID = 10mA
ID = 1.0A
IRFH4213DPbF
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Fig 12. On– Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14. Typical Avalanche Current vs. Pulsewidth
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
0
200
400
600
800
E
A
S
, S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP
13A
26A
BOTTOM
50A
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
0.1
1
10
100
1000
A
va
la
nc
he
C
ur
re
nt
(
A
)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 125°C and
Tstart =25°C (Single Pulse)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
0
1
2
3
4
5
6
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
)
TJ = 25°C
TJ = 125°C
ID = 50A
IRFH4213DPbF
6
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March 19, 2015
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
Fig 18. Gate Charge Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 19. Gate Charge Waveform
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Fig 16a. Unclamped Inductive Test Circuit
R G
I
AS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
Fig 16b. Unclamped Inductive Waveforms
IRFH4213DPbF
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Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
PQFN 5x6 Outline "B" Package Details
XXXX
XYWWX
XXXXX
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
(“4 or 5 digits”)
MARKING CODE
(Per Marking Spec)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
DATE CODE
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
PQFN 5x6 Part Marking
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
IRFH4213DPbF
8
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March 19, 2015
PQFN 5x6 Tape and Reel
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
Bo
W
P1
Ao
Ko
CODE
TAPE DIMENSIONS
REEL DIMENSIONS
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Pitch between successive cavity centers
Overall width of the carrier tape
DESCRIPTION
Type
Package
5 X 6 PQFN
Note: All dimension are nominal
Diameter
Reel
QTY
Width
Reel
(mm)
Ao
(mm)
Bo
(mm)
Ko
(mm)
P1
(mm)
W
Quadrant
Pin 1
(Inch)
W1
(mm)
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
IRFH4213DPbF
9
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© 2015 International Rectifier
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March 19, 2015
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit
http://www.irf.com/whoto-call/
† Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.107mH, R
G
= 50
, I
AS
= 50A.
Pulse width
400µs; duty cycle 2%.
R
is measured at T
J
of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to 100A by source bonding technology.
Qualification Information
†
Qualification Level
Industrial
(per JEDEC JESD47F
††
guidelines)
Moisture Sensitivity Level
PQFN 5mm x 6mm
MSL1
(per JEDEC J-STD-020D
††)
RoHS Compliant
Yes
Revision History
Date Comments
5/20/2013
Updated package 3D drawing, on page 1.
Added Continuous Drain Current limited by source bonding technology, on page 1.
Divided note 6 into note 6 & 7, on page 8.
4/10/2013
Release of final data sheet.
8/12/13
Added "FastIRFET™" above part number on page1
3/19/2015
Updated package outline and tape and reel on pages 7 and 8.
1
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© 2015 International Rectifier
Submit Datasheet Feedback
March 19, 2015
HEXFET
®
Power MOSFET
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
IRFH4213DPbF
PQFN 5mm x 6 mm
Tape and Reel
4000
IRFH4213DTRPbF
V
DSS
25
V
R
DS(on)
max
(@ V
GS
= 10V)
1.35
(@ V
GS
= 4.5V)
1.90
Qg
(typical)
25
nC
I
D
(@T
C (Bottom)
= 25°C)
100 A
m
PQFN 5X6 mm
Notes through are on page 8
Absolute Maximum Ratings
Parameter Max.
Units
V
GS
Gate-to-Source Voltage
± 20
V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
40
A
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V
208
I
D
@ T
C(Bottom)
= 100°C
Continuous Drain Current, V
GS
@ 10V
131
I
DM
Pulsed Drain Current 400
P
D
@T
A
= 25°C
Power Dissipation 3.6
W
P
D
@T
C(Bottom)
= 25°C
Power Dissipation
96
Linear Derating Factor 0.029
W/°C
T
J
Operating Junction and
-55 to + 150
°C
T
STG
Storage Temperature Range
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Source Bonding Technology Limited)
100
Applications
Synchronous Rectifier MOSFET for Synchronous Buck Converters
Features
Benefits
Low R
DSon
(<1.35m
)
Lower Conduction Losses
Low Thermal Resistance to PCB (<1.3°C/W)
Enable better thermal dissipation
Low Profile (<0.9 mm)
results in Increased Power Density
Industry-Standard Pinout
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant, Halogen-Free
Environmentally Friendlier
MSL1, Industrial Qualification
Increased Reliability
Schottky Intrinsic Diode with Low Forward Voltage
Lower Switching Losses
Fast
IR
FET™
IRFH4213DPbF
IRFH4213DPbF
2
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
March 19, 2015
D
S
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
25
–––
–––
V
V
GS
= 0V, I
D
= 1.0mA
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
–––
21
––– mV/°C Reference to 25°C, I
D
= 10mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
1.10
1.35
m
V
GS
= 10V, I
D
= 50A
––– 1.50 1.90
V
GS
= 4.5V, I
D
= 50A
V
GS(th)
Gate Threshold Voltage
1.1
1.6
2.1
V
V
DS
= V
GS
, I
D
= 100µA
V
GS(th)
Gate Threshold Voltage Coefficient
–––
-4.5
––– mV/°C V
DS
= V
GS
, I
D
= 10mA
I
DSS
Drain-to-Source Leakage Current
–––
–––
250
µA V
DS
= 20V, V
GS
= 0V
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
V
GS
= -20V
gfs Forward
Transconductance
340
–––
–––
S
V
DS
= 10V, I
D
= 50A
Q
g
Total Gate Charge
–––
55
–––
nC V
GS
= 10V, V
DS
= 13V, I
D
= 50A
Q
g
Total Gate Charge
–––
25
38
Q
gs1
Pre-Vth Gate-to-Source Charge
–––
9.4
–––
V
DS
= 13V
Q
gs2
Post-Vth Gate-to-Source Charge
–––
4.1
–––
nC V
GS
= 4.5V
Q
gd
Gate-to-Drain Charge
–––
9.4
–––
I
D
= 50A
Q
godr
Gate Charge Overdrive
–––
2.1
–––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
) –––
13.5
–––
Q
oss
Output Charge
–––
27
–––
nC V
DS
= 16V, V
GS
= 0V
R
G
Gate Resistance
–––
1.5
–––
t
d(on)
Turn-On Delay Time
–––
14
–––
V
DD
= 13V, V
GS
= 4.5V
t
r
Rise Time
–––
30
–––
ns I
D
= 50A
t
d(off)
Turn-Off Delay Time
–––
18
–––
R
G
=2.0
t
f
Fall Time
–––
12
–––
C
iss
Input Capacitance
–––
3520
–––
V
GS
= 0V
C
oss
Output Capacitance
–––
1070
–––
pF V
DS
= 13V
C
rss
Reverse Transfer Capacitance
–––
250
–––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
Max.
E
AS
Single Pulse Avalanche Energy
–––
180
I
AR
Avalanche Current
–––
50
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
I
S
Continuous Source Current
––– –––
100
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 400
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
–––
0.8
V
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
t
rr
Reverse Recovery Time
–––
26
37
ns
T
J
= 25°C, I
F
= 50A, V
DD
= 13V
Q
rr
Reverse Recovery Charge
–––
35
53
nC di/dt = 260A/µs
Parameter Typ.
Max.
Units
R
JC
(Bottom) Junction-to-Case –––
1.3
R
JC
(Top)
Junction-to-Case –––
21
°C/W
R
JA
Junction-to-Ambient –––
35
R
JA
(<10s)
Junction-to-Ambient –––
21
Thermal Resistance
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Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
60µs PULSE WIDTH
Tj = 25°C
2.5V
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.3V
2.8V
BOTTOM
2.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
60µs PULSE WIDTH
Tj = 150°C
2.5V
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.3V
2.8V
BOTTOM
2.5V
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o
-S
ou
rc
e
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 150°C
VDS = 15V
60µs PULSE WIDTH
-60 -40 -20
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
R
D
S
(o
n)
,
D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
N
or
m
al
iz
ed
)
ID = 50A
VGS = 10V
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
, C
ap
ac
ita
nc
e
(p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
10
20
30
40
50
60
70
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
14
V
G
S
, G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(
V
)
VDS= 20V
VDS= 13V
VDS= 5.0V
ID= 50A
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Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I S
D
, R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 150°C
VGS = 0V
25
50
75
100
125
150
TC , Case Temperature (°C)
0
40
80
120
160
200
240
I D
,
D
ra
in
C
ur
re
nt
(
A
)
Limited By Package
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
he
rma
l R
es
po
ns
e
(
Z
th
JC
)
°
C
/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1
10
100
VDS, Drain-toSource Voltage (V)
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
100µsec
DC
L
imited by
Package
OPERATION IN THIS AREA
LIMITED BY RDS(on)
-75
-50
-25
0
25
50
75
100 125 150
TJ , Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
2.5
V
G
S
(t
h)
G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(
V
)
ID = 100µA
ID = 250µA
ID = 1.0mA
ID = 10mA
ID = 1.0A
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Fig 12. On– Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14. Typical Avalanche Current vs. Pulsewidth
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
0
200
400
600
800
E
A
S
, S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP
13A
26A
BOTTOM
50A
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
0.1
1
10
100
1000
A
va
la
nc
he
C
ur
re
nt
(
A
)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 125°C and
Tstart =25°C (Single Pulse)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
0
1
2
3
4
5
6
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
)
TJ = 25°C
TJ = 125°C
ID = 50A
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Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
Fig 18. Gate Charge Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 19. Gate Charge Waveform
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Fig 16a. Unclamped Inductive Test Circuit
R G
I
AS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
Fig 16b. Unclamped Inductive Waveforms
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Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
PQFN 5x6 Outline "B" Package Details
XXXX
XYWWX
XXXXX
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
(“4 or 5 digits”)
MARKING CODE
(Per Marking Spec)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
DATE CODE
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
PQFN 5x6 Part Marking
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
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PQFN 5x6 Tape and Reel
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
Bo
W
P1
Ao
Ko
CODE
TAPE DIMENSIONS
REEL DIMENSIONS
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Pitch between successive cavity centers
Overall width of the carrier tape
DESCRIPTION
Type
Package
5 X 6 PQFN
Note: All dimension are nominal
Diameter
Reel
QTY
Width
Reel
(mm)
Ao
(mm)
Bo
(mm)
Ko
(mm)
P1
(mm)
W
Quadrant
Pin 1
(Inch)
W1
(mm)
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
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IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit
http://www.irf.com/whoto-call/
† Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.107mH, R
G
= 50
, I
AS
= 50A.
Pulse width
400µs; duty cycle 2%.
R
is measured at T
J
of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to 100A by source bonding technology.
Qualification Information
†
Qualification Level
Industrial
(per JEDEC JESD47F
††
guidelines)
Moisture Sensitivity Level
PQFN 5mm x 6mm
MSL1
(per JEDEC J-STD-020D
††)
RoHS Compliant
Yes
Revision History
Date Comments
5/20/2013
Updated package 3D drawing, on page 1.
Added Continuous Drain Current limited by source bonding technology, on page 1.
Divided note 6 into note 6 & 7, on page 8.
4/10/2013
Release of final data sheet.
8/12/13
Added "FastIRFET™" above part number on page1
3/19/2015
Updated package outline and tape and reel on pages 7 and 8.