HEXFET
®
Power MOSFET
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
S
D
G
V
DSS
150V
R
DS(on)
typ.
9.3m
Ω
max.
11m
Ω
I
D
(Silicon Limited)
104A
Absolute Maximum Ratings
Symbol
Parameter
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
e
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
d
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
θJC
Junction-to-Case
j
–––
0.40
R
θCS
Case-to-Sink, Flat Greased Surface
0.50
–––
°C/W
R
θJA
Junction-to-Ambient
ij
–––
62
830
380
18
10lbxin (1.1Nxm)
A
°C
300
-55 to + 175
± 20
2.5
Max.
104
74
420
IRFB4115PbF
G
D
S
Gate
Drain
Source
TO-220AB
D
S
D
G
Benefits
l
Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead Free
l
RoHS Compliant, Halogen-Free
1
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2014 International Rectifier
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November 11, 2014
Form
Quantity
IRFB4115PbF
TO-220
Tube
50
IRFB4115PbF
Base Part Number
Package Type
Standard Pack
Orderable Part Number
IRFB4115PbF
2
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2014 International Rectifier
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November 11, 2014
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Recommended max EAS limit, starting T
J
= 25°C,
L = 0.17mH, R
G
= 25
Ω, I
AS
= 100A, V
GS
=15V.
I
SD
≤ 62A, di/dt ≤ 1040A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
Pulse width
≤ 400µs; duty cycle ≤ 2%.
S
D
G
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
150
–––
–––
V
∆V
(BR)DSS
/
∆T
J
Breakdown Voltage Temp. Coefficient
–––
0.18
–––
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
–––
9.3
11
m
Ω
V
GS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
I
DSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
R
G
Internal Gate Resistance
–––
2.3
–––
Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
97
–––
–––
S
Q
g
Total Gate Charge
–––
77
120
nC
Q
gs
Gate-to-Source Charge
–––
28
–––
Q
gd
Gate-to-Drain ("Miller") Charge
–––
26
–––
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
–––
51
–––
t
d(on)
Turn-On Delay Time
–––
18
–––
ns
t
r
Rise Time
–––
73
–––
t
d(off)
Turn-Off Delay Time
–––
41
–––
t
f
Fall Time
–––
39
–––
C
iss
Input Capacitance
–––
5270
–––
pF
C
oss
Output Capacitance
–––
490
–––
C
rss
Reverse Transfer Capacitance
–––
105
–––
C
oss
eff. (ER) Effective Output Capacitance (Energy Related) –––
460
–––
C
oss
eff. (TR) Effective Output Capacitance (Time Related)
–––
530
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
–––
–––
104
A
(Body Diode)
I
SM
Pulsed Source Current
–––
–––
420
A
(Body Diode)
d
V
SD
Diode Forward Voltage
–––
–––
1.3
V
t
rr
Reverse Recovery Time
–––
86
–––
ns
T
J
= 25°C
V
R
= 130V,
–––
110
–––
T
J
= 125°C
I
F
= 62A
Q
rr
Reverse Recovery Charge
–––
300
–––
nC T
J
= 25°C
di/dt = 100A/µs
f
–––
450
–––
T
J
= 125°C
I
RRM
Reverse Recovery Current
–––
6.5
–––
A
T
J
= 25°C
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
D
= 62A
R
G
= 2.2
Ω
V
GS
= 10V
f
V
DD
= 98V
I
D
= 62A, V
DS
=0V, V
GS
= 10V
T
J
= 25°C, I
S
= 62A, V
GS
= 0V
f
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 3.5mA
c
V
GS
= 10V, I
D
= 62A
f
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 150V, V
GS
= 0V
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
V
DS
= 75V
Conditions
V
GS
= 10V
f
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 120V
h, See Fig. 11
V
GS
= 0V, V
DS
= 0V to 120V
g
Conditions
V
DS
= 50V, I
D
= 62A
I
D
= 62A
V
GS
= 20V
V
GS
= -20V
IRFB4115PbF
3
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November 11, 2014
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
VGS
TOP
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM
5.0V
≤60µs PULSE WIDTH
Tj = 25°C
5.0V
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
, C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
2
4
6
8
10
12
14
16
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 175°C
VDS = 50V
≤60µs PULSE WIDTH
0
20
40
60
80
100
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
, G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(
V
)
VDS= 120V
VDS= 75V
VDS= 30V
ID= 62A
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
5.0V
≤60µs PULSE WIDTH
Tj = 175°C
VGS
TOP
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM
5.0V
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
R
D
S
(o
n)
,
D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
N
or
m
al
iz
ed
)
ID = 62A
VGS = 10V
IRFB4115PbF
4
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November 11, 2014
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical C
OSS
Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I S
D
, R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
20
40
60
80
100
120
I D
,
D
ra
in
C
ur
re
nt
(
A
)
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
140
150
160
170
180
190
200
V
(B
R
)D
S
S
, D
ra
in
-t
o-
S
ou
rc
e
B
re
ak
do
w
n
V
ol
ta
ge
(
V
)
Id = 3.5mA
-20
0
20
40
60
80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
E
ne
rg
y
(µ
J)
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC
Fig 12. Threshold Voltage vs. Temperature
-75 -50 -25 0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
(t
h)
, G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(
V
)
ID = 250µA
ID = 1.0mA
ID = 1.0A
IRFB4115PbF
5
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Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
he
rm
al
R
es
po
ns
e
(
Z
th
JC
)
°
C
/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
τi (sec)
0.245 0.0059149
0.155 0.0006322
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
C
τ
C
Ci=
τi/Ri
Ci=
τi/Ri
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
0.1
1
10
100
1000
A
va
la
nc
he
C
ur
re
nt
(
A
)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τ j = 25°C and
Tstart = 150°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Tj = 150°C and
Tstart = 25°C (Single Pulse)
IRFB4115PbF
6
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November 11, 2014
Fig 15. - Typical Recovery Current vs. di
f
/dt
0
200
400
600
800
1000
diF /dt (A/µs)
0
10
20
30
40
50
I R
R
(
A
)
IF = 42A
VR = 130V
TJ = 25°C
TJ = 125°C
Fig 16. - Typical Recovery Current vs. di
f
/dt
0
200
400
600
800
1000
diF /dt (A/µs)
0
10
20
30
40
50
I R
R
(
A
)
IF = 62A
VR = 130V
TJ = 25°C
TJ = 125°C
Fig 18. - Typical Stored Charge vs. di
f
/dt
Fig 17. - Typical Stored Charge vs. di
f
/dt
0
200
400
600
800
1000
diF /dt (A/µs)
0
500
1000
1500
2000
2500
Q
R
R
(
nC
)
IF = 42A
VR = 130V
TJ = 25°C
TJ = 125°C
0
200
400
600
800
1000
diF /dt (A/µs)
0
600
1200
1800
2400
3000
Q
R
R
(
nC
)
IF = 62A
VR = 130V
TJ = 25°C
TJ = 125°C
IRFB4115PbF
7
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November 11, 2014
Fig 21a. Switching Time Test Circuit
Fig 21b. Switching Time Waveforms
Fig 20b. Unclamped Inductive Waveforms
Fig 20a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
RG
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
V
GS
Fig 22a. Gate Charge Test Circuit
Fig 22b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 19.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
*
V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Inductor Current
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
µF
50K
Ω
.2
µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
V
GS
IRFB4115PbF
8
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2014 International Rectifier
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November 11, 2014
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at:
http://www.irf.com/package/
IRFB4115
IRFB4115
g
PYWW?
LC LC
PART NUMBER
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
INTERNATIONAL
RECTIFIER LOGO
ASSEMBLY
LOT CODE
OR
YWWP
LC LC
PART NUMBER
DATE CODE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
INTERNATIONAL
RECTIFIER LOGO
ASSEMBLY
LOT CODE
IRFB4115PbF
9
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2014 International Rectifier
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November 11, 2014
Qualification standards can be found at International Rectifiers web site:
http://www.irf.com/product-info/reliability/
Applicable version of JEDEC standard at the time of product release.
Moisture Sensitivity Level
TO-220
N/A
RoHS compliant
Qualification information
†
Industrial
†
(per JEDEC JESD47F
††
guidelines)
Yes
Qualification level
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit
http://www.irf.com/whoto-call/
Revision History
Date
Comment
• Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 7.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
• Updated typo on the Fig.16 and Fig.17, unit of Y-axis from "A" to "nC" on page 5.
11/6/2014
• Added Fig 14 - Typical Avalanc
he Current vs Pulsewidth on page 5.
4/28/2014
HEXFET
®
Power MOSFET
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
S
D
G
V
DSS
150V
R
DS(on)
typ.
9.3m
Ω
max.
11m
Ω
I
D
(Silicon Limited)
104A
Absolute Maximum Ratings
Symbol
Parameter
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
e
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
d
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
θJC
Junction-to-Case
j
–––
0.40
R
θCS
Case-to-Sink, Flat Greased Surface
0.50
–––
°C/W
R
θJA
Junction-to-Ambient
ij
–––
62
830
380
18
10lbxin (1.1Nxm)
A
°C
300
-55 to + 175
± 20
2.5
Max.
104
74
420
IRFB4115PbF
G
D
S
Gate
Drain
Source
TO-220AB
D
S
D
G
Benefits
l
Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead Free
l
RoHS Compliant, Halogen-Free
1
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2014 International Rectifier
Submit Datasheet Feedback
November 11, 2014
Form
Quantity
IRFB4115PbF
TO-220
Tube
50
IRFB4115PbF
Base Part Number
Package Type
Standard Pack
Orderable Part Number
IRFB4115PbF
2
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
November 11, 2014
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Recommended max EAS limit, starting T
J
= 25°C,
L = 0.17mH, R
G
= 25
Ω, I
AS
= 100A, V
GS
=15V.
I
SD
≤ 62A, di/dt ≤ 1040A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
Pulse width
≤ 400µs; duty cycle ≤ 2%.
S
D
G
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
150
–––
–––
V
∆V
(BR)DSS
/
∆T
J
Breakdown Voltage Temp. Coefficient
–––
0.18
–––
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
–––
9.3
11
m
Ω
V
GS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
I
DSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
R
G
Internal Gate Resistance
–––
2.3
–––
Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
97
–––
–––
S
Q
g
Total Gate Charge
–––
77
120
nC
Q
gs
Gate-to-Source Charge
–––
28
–––
Q
gd
Gate-to-Drain ("Miller") Charge
–––
26
–––
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
–––
51
–––
t
d(on)
Turn-On Delay Time
–––
18
–––
ns
t
r
Rise Time
–––
73
–––
t
d(off)
Turn-Off Delay Time
–––
41
–––
t
f
Fall Time
–––
39
–––
C
iss
Input Capacitance
–––
5270
–––
pF
C
oss
Output Capacitance
–––
490
–––
C
rss
Reverse Transfer Capacitance
–––
105
–––
C
oss
eff. (ER) Effective Output Capacitance (Energy Related) –––
460
–––
C
oss
eff. (TR) Effective Output Capacitance (Time Related)
–––
530
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
–––
–––
104
A
(Body Diode)
I
SM
Pulsed Source Current
–––
–––
420
A
(Body Diode)
d
V
SD
Diode Forward Voltage
–––
–––
1.3
V
t
rr
Reverse Recovery Time
–––
86
–––
ns
T
J
= 25°C
V
R
= 130V,
–––
110
–––
T
J
= 125°C
I
F
= 62A
Q
rr
Reverse Recovery Charge
–––
300
–––
nC T
J
= 25°C
di/dt = 100A/µs
f
–––
450
–––
T
J
= 125°C
I
RRM
Reverse Recovery Current
–––
6.5
–––
A
T
J
= 25°C
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
D
= 62A
R
G
= 2.2
Ω
V
GS
= 10V
f
V
DD
= 98V
I
D
= 62A, V
DS
=0V, V
GS
= 10V
T
J
= 25°C, I
S
= 62A, V
GS
= 0V
f
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 3.5mA
c
V
GS
= 10V, I
D
= 62A
f
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 150V, V
GS
= 0V
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
V
DS
= 75V
Conditions
V
GS
= 10V
f
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 120V
h, See Fig. 11
V
GS
= 0V, V
DS
= 0V to 120V
g
Conditions
V
DS
= 50V, I
D
= 62A
I
D
= 62A
V
GS
= 20V
V
GS
= -20V
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Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
VGS
TOP
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM
5.0V
≤60µs PULSE WIDTH
Tj = 25°C
5.0V
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
, C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
2
4
6
8
10
12
14
16
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 175°C
VDS = 50V
≤60µs PULSE WIDTH
0
20
40
60
80
100
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
, G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(
V
)
VDS= 120V
VDS= 75V
VDS= 30V
ID= 62A
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
5.0V
≤60µs PULSE WIDTH
Tj = 175°C
VGS
TOP
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM
5.0V
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
R
D
S
(o
n)
,
D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
N
or
m
al
iz
ed
)
ID = 62A
VGS = 10V
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Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical C
OSS
Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I S
D
, R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
20
40
60
80
100
120
I D
,
D
ra
in
C
ur
re
nt
(
A
)
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
140
150
160
170
180
190
200
V
(B
R
)D
S
S
, D
ra
in
-t
o-
S
ou
rc
e
B
re
ak
do
w
n
V
ol
ta
ge
(
V
)
Id = 3.5mA
-20
0
20
40
60
80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
E
ne
rg
y
(µ
J)
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC
Fig 12. Threshold Voltage vs. Temperature
-75 -50 -25 0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
(t
h)
, G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(
V
)
ID = 250µA
ID = 1.0mA
ID = 1.0A
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Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
he
rm
al
R
es
po
ns
e
(
Z
th
JC
)
°
C
/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
τi (sec)
0.245 0.0059149
0.155 0.0006322
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
C
τ
C
Ci=
τi/Ri
Ci=
τi/Ri
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
0.1
1
10
100
1000
A
va
la
nc
he
C
ur
re
nt
(
A
)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τ j = 25°C and
Tstart = 150°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Tj = 150°C and
Tstart = 25°C (Single Pulse)
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Fig 15. - Typical Recovery Current vs. di
f
/dt
0
200
400
600
800
1000
diF /dt (A/µs)
0
10
20
30
40
50
I R
R
(
A
)
IF = 42A
VR = 130V
TJ = 25°C
TJ = 125°C
Fig 16. - Typical Recovery Current vs. di
f
/dt
0
200
400
600
800
1000
diF /dt (A/µs)
0
10
20
30
40
50
I R
R
(
A
)
IF = 62A
VR = 130V
TJ = 25°C
TJ = 125°C
Fig 18. - Typical Stored Charge vs. di
f
/dt
Fig 17. - Typical Stored Charge vs. di
f
/dt
0
200
400
600
800
1000
diF /dt (A/µs)
0
500
1000
1500
2000
2500
Q
R
R
(
nC
)
IF = 42A
VR = 130V
TJ = 25°C
TJ = 125°C
0
200
400
600
800
1000
diF /dt (A/µs)
0
600
1200
1800
2400
3000
Q
R
R
(
nC
)
IF = 62A
VR = 130V
TJ = 25°C
TJ = 125°C
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Fig 21a. Switching Time Test Circuit
Fig 21b. Switching Time Waveforms
Fig 20b. Unclamped Inductive Waveforms
Fig 20a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
RG
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
V
GS
Fig 22a. Gate Charge Test Circuit
Fig 22b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 19.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
*
V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Inductor Current
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
µF
50K
Ω
.2
µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
V
GS
IRFB4115PbF
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TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at:
http://www.irf.com/package/
IRFB4115
IRFB4115
g
PYWW?
LC LC
PART NUMBER
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
INTERNATIONAL
RECTIFIER LOGO
ASSEMBLY
LOT CODE
OR
YWWP
LC LC
PART NUMBER
DATE CODE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
INTERNATIONAL
RECTIFIER LOGO
ASSEMBLY
LOT CODE
IRFB4115PbF
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Qualification standards can be found at International Rectifiers web site:
http://www.irf.com/product-info/reliability/
Applicable version of JEDEC standard at the time of product release.
Moisture Sensitivity Level
TO-220
N/A
RoHS compliant
Qualification information
†
Industrial
†
(per JEDEC JESD47F
††
guidelines)
Yes
Qualification level
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit
http://www.irf.com/whoto-call/
Revision History
Date
Comment
• Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 7.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
• Updated typo on the Fig.16 and Fig.17, unit of Y-axis from "A" to "nC" on page 5.
11/6/2014
• Added Fig 14 - Typical Avalanc
he Current vs Pulsewidth on page 5.
4/28/2014