DirectFET
®
Power MOSFET
Description
The IRF8327SPbF combines the latest HEXFET
®
Power MOSFET Silicon technology with the advanced DirectFET
®
packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET
®
package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
®
package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8327SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF8327SPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 1.1mH, R
G
= 25
Ω, I
AS
= 11A.
Notes:
DirectFET
®
ISOMETRIC
SQ
l
RoHS Compliant and Halogen Free
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Ultra Low Package Inductance
l
Optimized for High Frequency Switching
l
Ideal for CPU Core DC-DC Converters
l
Optimized for Control FET application
l
Low Conduction and Switching Losses
l
Compatible with existing Surface Mount Techniques
l
100% Rg tested
SQ
SX
ST
MQ
MX
MT
MP
0
5
10
15
20
VGS, Gate -to -Source Voltage (V)
0
5
10
15
20
25
T
yp
ic
al
R
D
S
(o
n)
(
m
Ω
)
ID = 14A
TJ = 25°C
TJ = 125°C
V
DSS
V
GS
R
DS(on)
R
DS(on)
30V max ±20V max 5.1mΩ@ 10V 8.5mΩ@ 4.5V
0
5
10
15
20
25
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
, G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(
V
)
VDS= 24V
VDS= 15V
VDS= 6.0V
ID= 11A
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
9.2nC
3.0nC
1.2nC
19nC
7.9nC
1.9V
IRF8327SPbF
1
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Absolute Maximum Ratings
Parameter
Units
V
DS
Drain-to-Source Voltage
V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V e
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V e
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V f
I
DM
Pulsed Drain Current g
E
AS
Single Pulse Avalanche Energy h
mJ
I
AR
Avalanche Currentg
A
11
Max.
11
60
110
±20
30
14
62
Form
Quantity
IRF8327STRPbF
DirectFET SQ
Tape and Reel
4800
"TR" suffix
IRF8327STR1PbF
DirectFET SQ
Tape and Reel
1000
"TR1" suffix EOL notice # 264
Note
Orderable part number
Package Type
Standard Pack
2
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IRF8327SPbF
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Notes:
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
ΔΒV
DSS
/
ΔT
J
Breakdown Voltage Temp. Coefficient
–––
22
––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance
–––
5.1
7.3
mΩ
–––
8.5
10.9
V
GS(th)
Gate Threshold Voltage
1.4
1.9
2.4
V
ΔV
GS(th)
/
ΔT
J
Gate Threshold Voltage Coefficient
–––
-6.3
––– mV/°C
I
DSS
Drain-to-Source Leakage Current
–––
–––
1.0
μA
–––
–––
150
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
25
–––
–––
S
Q
g
Total Gate Charge
–––
9.2
14
Q
gs1
Pre-Vth Gate-to-Source Charge
–––
2.7
–––
Q
gs2
Post-Vth Gate-to-Source Charge
–––
1.2
–––
nC
Q
gd
Gate-to-Drain Charge
–––
3.0
–––
Q
godr
Gate Charge Overdrive
–––
2.3
–––
See Fig. 15
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
–––
4.2
–––
Q
oss
Output Charge
–––
7.9
–––
nC
R
G
Gate Resistance
–––
2.1
3.7
Ω
t
d(on)
Turn-On Delay Time
–––
7.8
–––
t
r
Rise Time
–––
8.9
–––
ns
t
d(off)
Turn-Off Delay Time
–––
9.3
–––
t
f
Fall Time
–––
5.3
–––
C
iss
Input Capacitance
–––
1430
–––
C
oss
Output Capacitance
–––
370
–––
pF
C
rss
Reverse Transfer Capacitance
–––
140
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
–––
–––
52
(Body Diode)
A
I
SM
Pulsed Source Current
–––
–––
110
(Body Diode)
g
V
SD
Diode Forward Voltage
–––
0.80
1.0
V
t
rr
Reverse Recovery Time
–––
17
26
ns
Q
rr
Reverse Recovery Charge
–––
19
29
nC
di/dt = 230A/μs
i
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
i
showing the
integral reverse
p-n junction diode.
V
GS
= 4.5V, I
D
= 11A
i
V
DS
= V
GS
, I
D
= 25μA
T
J
= 25°C, I
F
= 11A
V
GS
= 4.5V
I
D
= 11A
V
GS
= 0V
V
DS
= 15V
I
D
= 11A
V
DD
= 15V, V
GS
= 4.5V
i
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 14A
i
V
GS
= 20V
V
GS
= -20V
V
DS
= 24V, V
GS
= 0V
V
DS
= 15V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
R
G
= 1.8Ω
V
DS
= 15V, I
D
= 11A
Conditions
See Fig. 17
ƒ = 1.0MHz
V
DS
= 16V, V
GS
= 0V
3
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IRF8327SPbF
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
T
he
rm
al
R
es
po
ns
e
(
Z
th
JA
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (°C/W)
τi (sec)
5.276 0.00315
30.637 0.75858
22.090 36.9
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci=
τi/Ri
Ci=
τi/Ri
τ
A
τ
A
Absolute Maximum Ratings
Parameter
Units
P
D
@T
A
= 25°C
Power Dissipation
e
W
P
D
@T
A
= 70°C
Power Dissipation
e
P
D
@T
C
= 25°C
Power Dissipation
f
T
P
Peak Soldering Temperature
°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
R
θJA
Junction-to-Ambient
el
–––
58
R
θJA
Junction-to-Ambient
jl
12.5
–––
R
θJA
Junction-to-Ambient
kl
20
–––
°C/W
R
θJC
Junction-to-Case
fl
–––
3.0
R
θJ-PCB
Junction-to-PCB Mounted
1.0
–––
Linear Derating Factor
e
W/°C
0.017
270
-40 to + 150
Max.
42
2.2
1.4
4
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IRF8327SPbF
Fig 5. Typical Output Characteristics
Fig 4. Typical Output Characteristics
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM
2.5V
≤60μs PULSE WIDTH
Tj = 25°C
2.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
2.5V
≤60μs PULSE WIDTH
Tj = 150°C
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM
2.5V
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
TJ = 150°C
TJ = 25°C
TJ = -40°C
VDS = 15V
≤60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
T
yp
ic
al
R
D
S
(o
n)
(
N
or
m
al
iz
ed
)
ID = 14A
VGS = 10V
VGS = 4.5V
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C
, C
ap
ac
ita
nc
e(
pF
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
20
40
60
80
100
120
ID, Drain Current (A)
0
5
10
15
20
25
30
35
40
T
yp
ic
al
R
D
S
(o
n)
(
m
Ω
)
TJ = 25°C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 8.0V
Vgs = 10V
5
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IRF8327SPbF
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy vs. Drain Current
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-to-Drain Voltage (V)
0
1
10
100
1000
I S
D
, R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
25
50
75
100
125
150
TC , Case Temperature (°C)
0
10
20
30
40
50
60
I D
,
D
ra
in
C
ur
re
nt
(
A
)
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
T
yp
ic
al
V
G
S
(t
h)
G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(
V
)
ID = 25μA
ID = 100μA
ID = 150μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
0.01
0.10
1.00
10.00
100.00
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
TA = 25°C
TJ = 150°C
Single Pulse
100μsec
1msec
10msec
DC
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
E
A
S
,
S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP 0.82A
1.0A
BOTTOM 11A
6
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IRF8327SPbF
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
Fig 16b. Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 17b. Switching Time Waveforms
Fig 17a. Switching Time Test Circuit
R G
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
V
GS
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
1K
VCC
DUT
0
L
S
20K
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
7
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IRF8327SPbF
Fig 18.
Diode Reverse Recovery Test Circuit for HEXFET
®
Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
***
V
GS
= 5V for Logic Level Devices
***
+
-
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
**
*
*
Use P-Channel Driver for P-Channel Measurements
**
Reverse Polarity for P-Channel
DirectFET
®
Board Footprint, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
G
S
Note: For the most current drawing please refer to IR website at:
http://www.irf.com/package/
8
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IRF8327SPbF
DirectFET
®
Part Marking
DirectFET
®
Outline Dimension, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes
all recommendations for stencil and substrate designs.
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
N/A
0.0031
0.007
0.038
0.083
0.112
0.032
0.018
0.020
MAX
0.191
0.156
N/A
0.020
0.08
0.93
2.00
2.75
0.78
0.35
0.48
MIN
4.75
3.70
N/A
0.080
0.17
0.97
2.10
2.85
0.82
0.45
0.52
MAX
4.85
3.95
N/A
0.003
0.0008
0.079
0.037
0.108
0.031
0.019
0.014
MIN
0.146
0.187
METRIC
IMPERIAL
DIMENSIONS
0.88
0.92
0.036
0.035
0.032
0.78
0.82
0.031
Dimensions are shown in
millimeters (inches)
0.028
0.59
0.70
0.023
GATE MARKING
PART NUMBER
LOGO
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at:
http://www.irf.com/package/
9
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IRF8327SPbF
DirectFET
®
Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
A
E
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
F
B
C
IMPERIAL
MIN
0.311
0.154
0.469
0.215
0.158
0.197
0.059
0.059
MAX
8.10
4.10
12.30
5.55
4.20
5.20
N.C
1.60
MIN
7.90
3.90
11.90
5.45
4.00
5.00
1.50
1.50
METRIC
DIMENSIONS
MAX
0.319
0.161
0.484
0.219
0.165
0.205
N.C
0.063
D
H
G
Note: For the most current drawing please refer to IR website at:
http://www.irf.com/package/
REEL DIMENSIONS
NOTE: Controlling dimensions in mm Std reel
quantity is 4800 parts. (ordered as IRF8327SPBF).
B
C
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
IMPERIAL
H
MIN
330.0
20.2
12.8
1.5
100.0
N.C
12.4
11.9
STANDARD OPTION (QTY 4800)
CODE
A
B
C
D
E
F
G
H
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
12.992
0.795
0.504
0.059
3.937
N.C
0.488
0.469
METRIC
G
E
F
A
D
10
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IRF8327SPbF
MSL
1
(per JEDEC J-STD-020D
†††
)
RoHS Compliant
Yes
Moisture Sensitivity Level
DFET
Comments: This family of products has passed JEDEC’s Industrial
qualification. IR’s Consumer qualification level is granted by extension of
the higher Industrial level.
Qualification Information
†
Qualification level
Consumer
††
(per JEDEC JESD47F
†††
guidelines)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit
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Date
Comments
• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #264).
• Updated data sheet based on corporate template.
Revision History
5/6/2014
DirectFET
®
Power MOSFET
Description
The IRF8327SPbF combines the latest HEXFET
®
Power MOSFET Silicon technology with the advanced DirectFET
®
packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET
®
package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
®
package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8327SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF8327SPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 1.1mH, R
G
= 25
Ω, I
AS
= 11A.
Notes:
DirectFET
®
ISOMETRIC
SQ
l
RoHS Compliant and Halogen Free
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Ultra Low Package Inductance
l
Optimized for High Frequency Switching
l
Ideal for CPU Core DC-DC Converters
l
Optimized for Control FET application
l
Low Conduction and Switching Losses
l
Compatible with existing Surface Mount Techniques
l
100% Rg tested
SQ
SX
ST
MQ
MX
MT
MP
0
5
10
15
20
VGS, Gate -to -Source Voltage (V)
0
5
10
15
20
25
T
yp
ic
al
R
D
S
(o
n)
(
m
Ω
)
ID = 14A
TJ = 25°C
TJ = 125°C
V
DSS
V
GS
R
DS(on)
R
DS(on)
30V max ±20V max 5.1mΩ@ 10V 8.5mΩ@ 4.5V
0
5
10
15
20
25
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
, G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(
V
)
VDS= 24V
VDS= 15V
VDS= 6.0V
ID= 11A
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
9.2nC
3.0nC
1.2nC
19nC
7.9nC
1.9V
IRF8327SPbF
1
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Absolute Maximum Ratings
Parameter
Units
V
DS
Drain-to-Source Voltage
V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V e
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V e
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V f
I
DM
Pulsed Drain Current g
E
AS
Single Pulse Avalanche Energy h
mJ
I
AR
Avalanche Currentg
A
11
Max.
11
60
110
±20
30
14
62
Form
Quantity
IRF8327STRPbF
DirectFET SQ
Tape and Reel
4800
"TR" suffix
IRF8327STR1PbF
DirectFET SQ
Tape and Reel
1000
"TR1" suffix EOL notice # 264
Note
Orderable part number
Package Type
Standard Pack
2
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IRF8327SPbF
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Notes:
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
ΔΒV
DSS
/
ΔT
J
Breakdown Voltage Temp. Coefficient
–––
22
––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance
–––
5.1
7.3
mΩ
–––
8.5
10.9
V
GS(th)
Gate Threshold Voltage
1.4
1.9
2.4
V
ΔV
GS(th)
/
ΔT
J
Gate Threshold Voltage Coefficient
–––
-6.3
––– mV/°C
I
DSS
Drain-to-Source Leakage Current
–––
–––
1.0
μA
–––
–––
150
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
25
–––
–––
S
Q
g
Total Gate Charge
–––
9.2
14
Q
gs1
Pre-Vth Gate-to-Source Charge
–––
2.7
–––
Q
gs2
Post-Vth Gate-to-Source Charge
–––
1.2
–––
nC
Q
gd
Gate-to-Drain Charge
–––
3.0
–––
Q
godr
Gate Charge Overdrive
–––
2.3
–––
See Fig. 15
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
–––
4.2
–––
Q
oss
Output Charge
–––
7.9
–––
nC
R
G
Gate Resistance
–––
2.1
3.7
Ω
t
d(on)
Turn-On Delay Time
–––
7.8
–––
t
r
Rise Time
–––
8.9
–––
ns
t
d(off)
Turn-Off Delay Time
–––
9.3
–––
t
f
Fall Time
–––
5.3
–––
C
iss
Input Capacitance
–––
1430
–––
C
oss
Output Capacitance
–––
370
–––
pF
C
rss
Reverse Transfer Capacitance
–––
140
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
–––
–––
52
(Body Diode)
A
I
SM
Pulsed Source Current
–––
–––
110
(Body Diode)
g
V
SD
Diode Forward Voltage
–––
0.80
1.0
V
t
rr
Reverse Recovery Time
–––
17
26
ns
Q
rr
Reverse Recovery Charge
–––
19
29
nC
di/dt = 230A/μs
i
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
i
showing the
integral reverse
p-n junction diode.
V
GS
= 4.5V, I
D
= 11A
i
V
DS
= V
GS
, I
D
= 25μA
T
J
= 25°C, I
F
= 11A
V
GS
= 4.5V
I
D
= 11A
V
GS
= 0V
V
DS
= 15V
I
D
= 11A
V
DD
= 15V, V
GS
= 4.5V
i
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 14A
i
V
GS
= 20V
V
GS
= -20V
V
DS
= 24V, V
GS
= 0V
V
DS
= 15V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
R
G
= 1.8Ω
V
DS
= 15V, I
D
= 11A
Conditions
See Fig. 17
ƒ = 1.0MHz
V
DS
= 16V, V
GS
= 0V
3
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IRF8327SPbF
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
T
he
rm
al
R
es
po
ns
e
(
Z
th
JA
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (°C/W)
τi (sec)
5.276 0.00315
30.637 0.75858
22.090 36.9
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci=
τi/Ri
Ci=
τi/Ri
τ
A
τ
A
Absolute Maximum Ratings
Parameter
Units
P
D
@T
A
= 25°C
Power Dissipation
e
W
P
D
@T
A
= 70°C
Power Dissipation
e
P
D
@T
C
= 25°C
Power Dissipation
f
T
P
Peak Soldering Temperature
°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
R
θJA
Junction-to-Ambient
el
–––
58
R
θJA
Junction-to-Ambient
jl
12.5
–––
R
θJA
Junction-to-Ambient
kl
20
–––
°C/W
R
θJC
Junction-to-Case
fl
–––
3.0
R
θJ-PCB
Junction-to-PCB Mounted
1.0
–––
Linear Derating Factor
e
W/°C
0.017
270
-40 to + 150
Max.
42
2.2
1.4
4
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IRF8327SPbF
Fig 5. Typical Output Characteristics
Fig 4. Typical Output Characteristics
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM
2.5V
≤60μs PULSE WIDTH
Tj = 25°C
2.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
2.5V
≤60μs PULSE WIDTH
Tj = 150°C
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM
2.5V
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
TJ = 150°C
TJ = 25°C
TJ = -40°C
VDS = 15V
≤60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
T
yp
ic
al
R
D
S
(o
n)
(
N
or
m
al
iz
ed
)
ID = 14A
VGS = 10V
VGS = 4.5V
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C
, C
ap
ac
ita
nc
e(
pF
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
20
40
60
80
100
120
ID, Drain Current (A)
0
5
10
15
20
25
30
35
40
T
yp
ic
al
R
D
S
(o
n)
(
m
Ω
)
TJ = 25°C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 8.0V
Vgs = 10V
5
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IRF8327SPbF
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy vs. Drain Current
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-to-Drain Voltage (V)
0
1
10
100
1000
I S
D
, R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
25
50
75
100
125
150
TC , Case Temperature (°C)
0
10
20
30
40
50
60
I D
,
D
ra
in
C
ur
re
nt
(
A
)
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
T
yp
ic
al
V
G
S
(t
h)
G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(
V
)
ID = 25μA
ID = 100μA
ID = 150μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
0.01
0.10
1.00
10.00
100.00
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
TA = 25°C
TJ = 150°C
Single Pulse
100μsec
1msec
10msec
DC
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
E
A
S
,
S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP 0.82A
1.0A
BOTTOM 11A
6
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IRF8327SPbF
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
Fig 16b. Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 17b. Switching Time Waveforms
Fig 17a. Switching Time Test Circuit
R G
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
V
GS
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
1K
VCC
DUT
0
L
S
20K
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
7
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IRF8327SPbF
Fig 18.
Diode Reverse Recovery Test Circuit for HEXFET
®
Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
***
V
GS
= 5V for Logic Level Devices
***
+
-
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
**
*
*
Use P-Channel Driver for P-Channel Measurements
**
Reverse Polarity for P-Channel
DirectFET
®
Board Footprint, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
G
S
Note: For the most current drawing please refer to IR website at:
http://www.irf.com/package/
8
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IRF8327SPbF
DirectFET
®
Part Marking
DirectFET
®
Outline Dimension, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes
all recommendations for stencil and substrate designs.
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
N/A
0.0031
0.007
0.038
0.083
0.112
0.032
0.018
0.020
MAX
0.191
0.156
N/A
0.020
0.08
0.93
2.00
2.75
0.78
0.35
0.48
MIN
4.75
3.70
N/A
0.080
0.17
0.97
2.10
2.85
0.82
0.45
0.52
MAX
4.85
3.95
N/A
0.003
0.0008
0.079
0.037
0.108
0.031
0.019
0.014
MIN
0.146
0.187
METRIC
IMPERIAL
DIMENSIONS
0.88
0.92
0.036
0.035
0.032
0.78
0.82
0.031
Dimensions are shown in
millimeters (inches)
0.028
0.59
0.70
0.023
GATE MARKING
PART NUMBER
LOGO
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at:
http://www.irf.com/package/
9
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May 6, 2014
IRF8327SPbF
DirectFET
®
Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
A
E
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
F
B
C
IMPERIAL
MIN
0.311
0.154
0.469
0.215
0.158
0.197
0.059
0.059
MAX
8.10
4.10
12.30
5.55
4.20
5.20
N.C
1.60
MIN
7.90
3.90
11.90
5.45
4.00
5.00
1.50
1.50
METRIC
DIMENSIONS
MAX
0.319
0.161
0.484
0.219
0.165
0.205
N.C
0.063
D
H
G
Note: For the most current drawing please refer to IR website at:
http://www.irf.com/package/
REEL DIMENSIONS
NOTE: Controlling dimensions in mm Std reel
quantity is 4800 parts. (ordered as IRF8327SPBF).
B
C
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
IMPERIAL
H
MIN
330.0
20.2
12.8
1.5
100.0
N.C
12.4
11.9
STANDARD OPTION (QTY 4800)
CODE
A
B
C
D
E
F
G
H
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
12.992
0.795
0.504
0.059
3.937
N.C
0.488
0.469
METRIC
G
E
F
A
D
10
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IRF8327SPbF
MSL
1
(per JEDEC J-STD-020D
†††
)
RoHS Compliant
Yes
Moisture Sensitivity Level
DFET
Comments: This family of products has passed JEDEC’s Industrial
qualification. IR’s Consumer qualification level is granted by extension of
the higher Industrial level.
Qualification Information
†
Qualification level
Consumer
††
(per JEDEC JESD47F
†††
guidelines)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit
http://www.irf.com/whoto-call/
Date
Comments
• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #264).
• Updated data sheet based on corporate template.
Revision History
5/6/2014