IRF8252TRPbF-1 Product Datasheet

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HEXFET

®

 Power MOSFET

Notes

  through 

…

 are on page 10

Applications

l

 Synchronous MOSFET for Notebook Processor Power

l

 Synchronous Rectifier MOSFET for Isolated DC-DC Converters

Top View

8

1

2

3

4

5

6

7

D

D

D

D

G

S

A

S

S

A

SO-8

Absolute Maximum Ratings

Parameter

Units

V

DS

Drain-to-Source Voltage

V

GS

Gate-to-Source Voltage

I

D

 @ T

A

 = 25°C

Continuous Drain Current, V

GS

 @ 10V

I

D

 @ T

A

 = 70°C

Continuous Drain Current, V

GS

 @ 10V

I

DM

Pulsed Drain Current 

c

P

D

 @T

A

 = 25°C

Power Dissipation 

P

D

 @T

A

 = 70°C

Power Dissipation 

Linear Derating Factor  

W/°C

T

Operating Junction and

T

STG

Storage Temperature Range

Thermal Resistance

Parameter

Typ.

Max.

Units

R

θJL 

Junction-to-Drain Lead 

g

–––

20

R

θJA 

Junction-to-Ambient 

fg

–––

50

-55  to + 150

2.5

0.02

1.6

Max.

25
20

200

 ±20

25

°C/W

V

A

W

°C

IRF8252TRPbF-1

Features

Benefits

Industry-standard pinout SO-8 Package

Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques                        

Easier Manufacturing

RoHS Compliant, Halogen-Free

Environmentally Friendlier

MSL1, Industrial qualification

Increased Reliability

V

DS

25

V

R

DS(on) max 

(@V

GS

 = 10V)

2.7

Q

g (typical)

35

nC

I

(@T

A

 = 25°C)

25

A

mΩ

1

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Form

Quantity

IRF8252PbF-1

SO-8

Tape and Reel

4000

IRF8252TRPbF-1

Package Type

Standard Pack

 Orderable Part Number

Base Part  Number

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IRF8252TRPbF-1

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S

D

G

Static @ T

J

 = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

BV

DSS

Drain-to-Source Breakdown Voltage

25

–––

–––

V

ΔΒV

DSS

/

ΔT

Breakdown Voltage Temp. Coefficient

–––

0.018

–––

V/°C

R

DS(on)

Static Drain-to-Source On-Resistance

–––

2.0

2.7

–––

2.9

3.7

V

GS(th)

Gate Threshold Voltage

1.35

1.80

2.35

V

ΔV

GS(th)

Gate Threshold Voltage Coefficient

–––

-6.67

––– mV/°C

I

DSS

Drain-to-Source Leakage Current

–––

–––

1.0

–––

–––

150

I

GSS

Gate-to-Source Forward Leakage

–––

–––

100

Gate-to-Source Reverse Leakage

–––

–––

-100

gfs

Forward Transconductance

89

–––

–––

S

Q

g

Total Gate Charge 

–––

35

53

Q

gs1

Pre-Vth Gate-to-Source Charge

–––

10

–––

Q

gs2

Post-Vth Gate-to-Source Charge

–––

4.6

–––

Q

gd

Gate-to-Drain Charge

–––

12

–––

Q

godr

Gate Charge Overdrive

–––

8.9

–––

See Figs. 15 & 16

Q

sw

Switch Charge (Q

gs2

 + Q

gd

)

–––

16

–––

Q

oss

Output Charge

–––

26

–––

nC

R

g

Gate Resistance

–––

0.61

1.22

Ω

t

d(on)

Turn-On Delay Time

–––

23

–––

t

r

Rise Time

–––

32

–––

t

d(off)

Turn-Off Delay Time

–––

19

–––

t

f

Fall Time

–––

12

–––

C

iss

Input Capacitance

–––

5305

–––

C

oss

Output Capacitance

–––

1340

–––

C

rss

Reverse Transfer Capacitance

–––

725

–––

Avalanche Characteristics

Parameter

Units

E

AS

Single Pulse Avalanche Energy 

d

mJ

I

AR

Avalanche Current 

c

A

Diode Characteristics

        Parameter

Min. Typ. Max. Units

I

S

Continuous Source Current 

–––

–––

(Body Diode)

I

SM

Pulsed Source Current

–––

–––

(Body Diode)

c

V

SD

Diode Forward Voltage

–––

–––

1.0

V

t

rr

Reverse Recovery Time

–––

19

29

ns

Q

rr

Reverse Recovery Charge

–––

12

18

nC

t

on

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

m

Ω

A

3.1

200

A

–––

I

D

 = 20A

V

GS

 = 0V

V

DS

 = 13V

nC

ns

pF

V

GS

 = 4.5V, I

D

 = 20A 

e

V

GS

 = 4.5V 

Typ.

–––

V

DS

 = V

GS

, I

D

 = 100μA

R

G

 = 1.8

Ω

V

DS

 = 13V, I

D

 = 20A

V

DS

 = 20V, V

GS

 = 0V, T

J

 = 125°C

μA

nA

T

J

 = 25°C, I

F

 = 20A, V

DD

 = 13V

di/dt = 230A/μs 

e

T

J

 = 25°C, I

S

 = 20A, V

GS

 = 0V 

e

showing  the
integral reverse

p-n junction diode.

MOSFET symbol

V

DS

 = V

GS

, I

D

 = 100μA

V

DS

 = 16V, V

GS

 = 0V

V

DD

 = 13V, V

GS

 = 4.5V

I

D

 = 20A

V

DS

 = 13V

V

GS

 = 20V

V

GS

 = -20V

V

DS

 = 20V, V

GS

 = 0V

Conditions

V

GS

 = 0V, I

D

 = 250μA

Reference to 25°C, I

D

 = 1mA 

V

GS

 = 10V, I

D

 = 25A 

e

Conditions

See Fig. 18

Max.

231

20

ƒ = 1.0MHz

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IRF8252TRPbF-1

Fig 4.  Normalized On-Resistance

vs. Temperature

Fig 2.  Typical Output Characteristics

Fig 1.  Typical Output Characteristics

Fig 3.  Typical Transfer Characteristics

1

2

3

4

5

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VDS = 15V
≤60μs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

1.6

R

D

S

(o

n)

 ,

 D

ra

in

-t

o-

S

ou

rc

O

R

es

is

ta

nc

   

   

   

   

   

   

   

 (

N

or

m

al

iz

ed

)

ID = 25A

VGS = 10V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.001

0.01

0.1

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

VGS

TOP          

10V
5.0V

4.5V

3.5V

3.0V

2.7V

2.5V

BOTTOM

2.3V

≤60μs PULSE WIDTH

Tj = 25°C

2.3V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

2.3V

≤60μs PULSE WIDTH

Tj = 150°C

VGS

TOP          

10V
5.0V

4.5V

3.5V

3.0V

2.7V

2.5V

BOTTOM

2.3V

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IRF8252TRPbF-1

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Fig 8.  Maximum Safe Operating Area

Fig 6.  Typical Gate Charge vs.

Gate-to-Source Voltage

Fig 5.  Typical Capacitance vs.

Drain-to-Source Voltage

Fig 7.  Typical Source-Drain Diode

Forward Voltage

0

20

40

60

80

100

 QG,  Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

V

G

S

, G

at

e-

to

-S

ou

rc

V

ol

ta

ge

 (

V

)

VDS= 20V

VDS= 13V

ID= 20A

0.2

0.4

0.6

0.8

1.0

1.2

VSD, Source-to-Drain Voltage (V)

1.0

10

100

1000

I S

D

, R

ev

er

se

 D

ra

in

 C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VGS = 0V

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C

, C

ap

ac

ita

nc

(p

F

)

VGS   = 0V,       f = 1 MHZ

Ciss   = Cgs + Cgd,  C ds SHORTED
Crss   = Cgd 

Coss  = Cds + Cgd

Coss

Crss

Ciss

0

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I D

,  

D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

OPERATION IN THIS AREA 

LIMITED BY R DS(on)

TA = 25°C

Tj = 150°C

Single Pulse

100μsec

1msec

10msec

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IRF8252TRPbF-1

Fig 11.  Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9.  Maximum Drain Current vs.

Ambient Temperature

Fig 10.  Threshold Voltage vs. Temperature

25

50

75

100

125

150

 TA , Ambient Temperature (°C)

0

5

10

15

20

25

30

I D

,   

D

ra

in

 C

ur

re

nt

 (

A

)

-75 -50 -25

0

25

50

75 100 125 150

TJ , Temperature ( °C )

1.0

1.5

2.0

2.5

V

G

S

(t

h)

, G

at

T

hr

es

ho

ld

 V

ol

ta

ge

 (

V

)

ID = 250μA

ID = 100μA

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

10

100

1000

t1 , Rectangular Pulse Duration (sec)

0.01

0.1

1

10

100

T

he

rm

al

 R

es

po

ns

Z

 th

JA

 )

 °

C

/W

0.20
0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + TA

τ

J

τ

J

τ

1

τ

1

τ

2

τ

2

τ

3

τ

3

R

1

R

1

R

2

R

2

R

3

R

3

Ci= 

τi/Ri

Ci= 

τi/Ri

τ

4

τ

4

R

4

R

4

τ

A

τ

A

R

8

R

8

τ

5

τ

5

R

5

R

5

τ

6

τ

6

R

6

R

6

τ

7

τ

7

R

7

R

7

0.02127       0.000002
0.02040       0.000006
0.21216       0.000082
0.79696       0.001560
6.31529       0.028913
0.45152       0.006475
26.2230       1.208856
16.5590       45.68988

 Ri (°C/W)   

  τi (sec)

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IRF8252TRPbF-1

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Fig 13.  Maximum Avalanche Energy

vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

Fig 15.  Gate Charge Test Circuit

1K

VCC

DUT

0

L

S

20K

Fig 14.  Unclamped Inductive Test Circuit

and Waveform

tp

V

(BR)DSS

I

AS

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

Fig 16.   Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

25

50

75

100

125

150

Starting TJ , Junction Temperature (°C)

0

100

200

300

400

500

600

700

800

900

1000

E

A

S

 , 

S

in

gl

P

ul

se

 A

va

la

nc

he

 E

ne

rg

(m

J)

ID

TOP         2.45A

8.0A

BOTTOM 20A

2

4

6

8

10

VGS, Gate -to -Source Voltage  (V)

1

2

3

4

5

6

7

R

D

S

(o

n)

,  

D

ra

in

-t

-S

ou

rc

O

R

es

is

ta

nc

(m

Ω

)

ID = 20A

TJ = 25°C

TJ = 125°C

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IRF8252TRPbF-1

Fig 17. 

Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET

®

 Power MOSFETs

Circuit Layout Considerations

   •  Low Stray Inductance

   •  Ground Plane

   •  Low Leakage Inductance

      Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple 

≤ 5%

Body Diode  Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

V

GS

=10V

V

DD

I

SD

Driver Gate Drive

D.U.T. I

SD

Waveform

D.U.T. V

DS

Waveform

Inductor Curent

D = 

P.W.

Period

*

 V

GS

 = 5V for Logic Level Devices

*

+

-

+

+

+

-

-

-

ƒ

„

‚

R

G

V

DD

•  dv/dt controlled by R

G

•  Driver same type as D.U.T.

•  I

SD

 controlled by Duty Factor "D"

•  D.U.T. - Device Under Test

D.U.T



Fig 18b.  Switching Time Waveforms

Fig 18a.  Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)

t

r

t

d(off)

t

f

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

V

GS

+

-

V

DD

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IRF8252TRPbF-1

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Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package/

SO-8 Package Outline

(Mosfet & Fetky)

e 1

D
E

y

b

A
A1

H
K
L

.189
.1497

 0°

.013

.050  BASIC

.0532
.0040

.2284
.0099
.016

.1968
.1574

 8°

.020

.0688
.0098

.2440
.0196
.050

4.80
3.80

0.33

1.35
0.10

5.80
0.25
0.40

 0°

1.27  BASIC

5.00
4.00

0.51

1.75
0.25

6.20
0.50
1.27

MIN

MAX

MILLIMETERS

INCHES

MIN

MAX

DIM

 8°

e

c

.0075

.0098

0.19

0.25

.025  BASIC

0.635  BASIC

8

7

5

6

5

D

B

E

A

e

6X

H

0.25 [.010] 

A

6

7

K x 45°

8X L

8X c

y

0.25 [.010] 

C A B

e1

A

A1

8X b

C

0.10 [.004] 

4

3

1

2

FOOTPRINT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

8X 1.78 [.070]

4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

NOTES:
1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2.  CONTROLLING DIMENSION: MILLIMETER
3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

5   DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.

6   DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.

     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7   DIMENSION IS THE LENGT H OF LEAD FOR SOLDERING TO

     A SUBSTRATE.

     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

Dimensions are shown in milimeters (inches)

SO-8 Part Marking Information

P =  DISGNATES LEAD - FREE

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

F7101

XXXX

INTERNATIONAL

LOGO

RECTIFIER

PART NUMBER

LOT CODE

PRODUCT (OPTIONAL)

DATE CODE (YWW)

Y =  LAST DIGIT OF THE YEAR

WW =  WEEK

A =  ASSEMBLY SITE CODE

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IRF8252TRPbF-1

 330.00
(12.992)
  MAX.

14.40 ( .566 )
12.40 ( .488 )

NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 )

NOTES:
1.   CONTROLLING DIMENSION : MILLIMETER.
2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3.   OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel

 

(Dimensions are shown in milimeters (inches))

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package/

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irf8252pbf-1-html.html
background image

IRF8252TRPbF-1

10

           www.irf.com 

© 

2014 International Rectifier   

    Submit Datasheet Feedback

                  October 16, 2014

Notes:



 Repetitive rating;  pulse width limited by max. junction temperature.

‚

  Starting T

= 25°C, L = 1.12mH, R

= 25

Ω, I

AS 

= 20A.

ƒ

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

„

 

When mounted on 1 inch square  copper board.

…

 R

θ 

is measured at 

T

J

 of approximately 90°C.

†     Qualification standards can be found at International Rectifier’s web site:

 

http://www.irf.com/product-info/reliability

††   

Applicable version of JEDEC standard at the time of product release

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit 

http://www.irf.com/whoto-call/

MS L1

(per JEDEC J-S TD-020D

†† 

)

RoHS compliant

Yes

Qualification information

Qualification level

Industrial

(per JEDEC JES D47F

††

 guidelines)

Moisture Sensitivity Level

SO-8

Date

Comments

• Corrected part number from" IRF8252PbF-1" to "IRF8252TRPbF-1" -all pages
• Removed the "IRF8252PbF-1" bulk part number from  ordering information on page1

Revision History 

10/16/2014

Maker
Infineon Technologies