HEXFET
®
Power MOSFET
Notes
through
are on page 8
SO-8
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
IRF7910PbF-1
Applications
l
High Frequency 3.3V and 5V input Point of-Load Synchronous Buck Converters for Netcom and
Computing Applications
l
Power Management for Netcom, Computing and Portable Applications
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
θJL
Junction-to-Drain Lead
–––
42
R
θJA
Junction-to-Ambient
–––
62.5
°C/W
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
V
DS
Drain-Source Voltage
12
V
V
GS
Gate-to-Source Voltage
± 12 V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 4.5V
10
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 4.5V
7.9
A
I
DM
Pulsed Drain Current
79
P
D
@T
A
= 25°C
Maximum Power Dissipation
2.0
W
P
D
@T
A
= 70°C
Maximum Power Dissipation
1.3
W
Linear Derating Factor 16 mW/°C
T
J
, T
STG
Junction and Storage Temperature Range
-55 to + 150
°C
Form
Quantity
Tube/Bulk
95
IRF7910PbF-1
Tape and Reel
4000
IRF7910TRPbF-1
Package Type
Standard Pack
Orderable Part Number
IRF7910PbF-1
SO-8
Base Part Number
Features
Benefits
Industry-standard pinout SO-8 Package
⇒
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant, Halogen-Free
Environmentally Friendlier
MSL1, Industrial qualification
Increased Reliability
V
DS
12
V
R
DS(on) max
(@V
GS
= 4.5V)
15
Q
g (typical)
17
nC
I
D
(@T
A
= 25°C)
10
A
mΩ
1
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2
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Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Symbol
Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
18
––– –––
S
V
DS
= 6.0V, I
D
= 8.0A
Q
g
Total Gate Charge
––– 17 26 I
D
= 8.0A
Q
gs
Gate-to-Source Charge
–––
4.4
–––
nC
V
DS
= 6.0V
Q
gd
Gate-to-Drain ("Miller") Charge
–––
5.2
–––
V
GS
= 4.5V
Q
oss
Output Gate Charge
–––
16
–––
V
GS
= 0V, V
DS
= 10V
t
d(on)
Turn-On Delay Time
–––
9.4
–––
V
DD
= 6.0V
t
r
Rise Time
–––
22
–––
I
D
= 8.0A
t
d(off)
Turn-Off Delay Time
–––
16
–––
R
G
= 1.8
Ω
t
f
Fall Time
–––
6.3
–––
V
GS
= 4.5V
C
iss
Input Capacitance
––– 1730 –––
V
GS
= 0V
C
oss
Output Capacitance
––– 1340 –––
V
DS
= 6.0V
C
rss
Reverse Transfer Capacitance
–––
330 –––
pF
ƒ = 1.0MHz
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
m
Ω
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
12
–––
–––
V
V
GS
= 0V, I
D
= 250μA
ΔV
(BR)DSS
/
ΔT
J
Breakdown Voltage Temp. Coefficient
–––
0.01 –––
V/°C Reference to 25°C, I
D
= 1mA
–––
11.5
15
V
GS
= 4.5V, I
D
= 8.0A
–––
20
50
V
GS
= 2.8V, I
D
= 5.0A
V
GS(th)
Gate Threshold Voltage
0.6
–––
2.0
V
V
DS
= V
GS
, I
D
= 250μA
–––
–––
100
μA
V
DS
= 9.6V, V
GS
= 0V
–––
–––
250
V
DS
= 9.6V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage
–––
–––
200
V
GS
= 12V
Gate-to-Source Reverse Leakage
–––
––– -200
nA
V
GS
= -12V
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
–––
–––
p-n junction diode.
––– 0.85
1.3
V
T
J
= 25°C, I
S
= 8.0A, V
GS
= 0V
––– 0.70 –––
T
J
= 125°C, I
S
= 8.0A, V
GS
= 0V
t
rr
Reverse Recovery Time
–––
50
75
ns
T
J
= 25°C, I
F
= 8.0A, V
R
=12V
Q
rr
Reverse Recovery Charge
–––
60
90
nC
di/dt = 100A/μs
t
rr
Reverse Recovery Time
–––
51
77
ns
T
J
= 125°C, I
F
= 8.0A, V
R
=12V
Q
rr
Reverse Recovery Charge
–––
60
90
nC
di/dt = 100A/μs
S
D
G
Diode Characteristics
1.8
79
A
V
SD
Diode Forward Voltage
Symbol
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
–––
100
mJ
I
AR
Avalanche Current
–––
8.0
A
Avalanche Characteristics
IRF7910PbF-1
3
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Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
1.0
2.0
3.0
4.0
VGS, Gate-to-Source Voltage (V)
1
10
100
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
Α
)
TJ = 25°C
TJ = 150°C
VDS = 10V
20μs PULSE WIDTH
-60
-40
-20
0
20
40
60
80
100 120 140 160
0.0
0.5
1.0
1.5
2.0
R
, D
ra
in
-to
-S
o
u
rc
e
On
R
e
si
st
a
n
ce
(N
or
m
a
liz
ed)
D
S
(on)
V
=
I
=
GS
D
4.5V
10A
T
J
, Junction Temperature (°C)
0.1
1
10
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
1.5V
20μs PULSE WIDTH
Tj = 150°C
V
GS
TOP 10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
BOTTOM 1.5V
0.1
1
10
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
1.5V
20μs PULSE WIDTH
Tj = 25°C
V
GS
TOP 10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
BOTTOM 1.5V
IRF7910PbF-1
4
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
0.0
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
I S
D
, R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 150°C
VGS = 0V
0
1
10
100
VDS , Drain-toSource Voltage (V)
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C
, C
ap
ac
ita
nc
e
(p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
10
20
30
40
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
, G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(
V
)
VDS= 9.6V
VDS= 6.0V
ID= 8.0A
FOR TEST CIRCUIT
SEE FIGURE 13
IRF7910PbF-1
5
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
her
mal
Res
pons
e
(Z
)
1
th
JA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
25
50
75
100
125
150
0.0
2.0
4.0
6.0
8.0
10.0
I ,
D
rai
n C
u
rr
ent
(
A
)
D
T
C
, Case Temperature (°C)
IRF7910PbF-1
6
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Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μF
50K
Ω
.2
μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
GS
Q
G
Q
GS
Q
GD
V
G
Charge
tp
V
(BR)DSS
I
AS
R G
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
25
50
75
100
125
150
0
50
100
150
200
250
Starting T , Junction Temperature
( C)
E
, S
ingl
e P
ul
se A
val
anc
he E
ner
gy
(
m
J)
J
AS
°
ID
TOP
BOTTOM
3.6A
6.4A
8.0A
0
20
40
60
80
100
ID , Drain Current (A)
0.0120
0.0125
0.0130
0.0135
0.0140
0.0145
R
D
S
(o
n)
,
D
ra
in
-to
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(Ω
)
VGS = 4.5V
2.5
3.5
4.5
5.5
VGS, Gate -to -Source Voltage (V)
0.010
0.013
0.015
0.018
0.020
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
Ω
)
ID = 8.0A
IRF7910PbF-1
7
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SO-8 Package Outline
(Mosfet & Fetky)
e 1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BAS IC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN
MAX
MILLIMETERS
INCHES
MIN
MAX
DIM
8°
e
c
.0075
.0098
0.19
0.25
.025 BAS IC
0.635 BAS IC
8
7
5
6
5
D
B
E
A
e
6X
H
0.25 [.010]
A
6
7
K x 45°
8X L
8X c
y
0.25 [.010]
C A B
e1
A
A1
8X b
C
0.10 [.004]
4
3
1
2
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
8X 1.78 [.070]
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGT H OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
P = DISGNATES LEAD - FREE
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
F7101
XXXX
INTERNATIONAL
LOGO
RECTIFIER
PART NUMBER
LOT CODE
PRODUCT (OPTIONAL)
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at:
http://www.irf.com/package/
IRF7910PbF-1
8
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November 22, 2013
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
(Dimensions are shown in millimeters (inches))
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 3.2mH, R
G
= 25
Ω, I
AS
= 8.0A.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
Note: For the most current drawing please refer to IR website at:
http://www.irf.com/package/
† Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com/product-info/reliability
††
Applicable version of JEDEC standard at the time of product release
MS L1
(per JEDEC J-S TD-020D
††
)
RoHS compliant
Yes
Qualification information
†
Qualification level
Industrial
(per JEDEC JES D47F
††
guidelines)
Moisture Sensitivity Level
SO-8
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit
http://www.irf.com/whoto-call/