1
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© 2012 International Rectifier February
18,
2013
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
IRF7748L1TRPbF
DirectFET Large Can
Tape and Reel
4000
IRF7748L1TRPbF
Applications
RoHS Compliant, Halogen Free
Lead-Free (Qualified up to 260°C Reflow)
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Industrial Qualified
DirectFET™ Power MOSFET
Fig 1. Typical On-Resistance vs. Gate Voltage
DirectFET™ ISOMETRIC
L6
Ordering Information
V
DSS
V
GS
R
DS(on)
60V min
±20V max
1.7m
@ 10V
Q
g tot
Q
gd
V
gs(th)
146nC 40nC
2.9V
D
D
G
S
S
S
S
S
S
Applicable DirectFET Outline and Substrate Outline
SB
SC
M2
M4
L4
L6
L8
Description
The IRF7748L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor
phase, infra-red or convection soldering techniques, when
application note AN-1035
is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7748L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for sys-
tem reliability improvements, and makes this device ideal for high performance power converters.
Absolute Maximum Ratings
Parameter Max.
Units
V
DS
Drain-to-Source Voltage
60
V
V
GS
Gate-to-Source Voltage
±20
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 148
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 104
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 28
A
I
DM
Pulsed Drain Current 592
E
AS
Single Pulse Avalanche Energy 129
mJ
I
AR
Avalanche Current 89
A
Notes
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.033mH, R
G
= 50
, I
AS
= 89A.
0
25
50
75
100
125
150
175
200
ID, Drain Current (A)
1.0
1.5
2.0
2.5
3.0
T
yp
ic
al
R
D
S
(o
n)
( m
V GS = 7V
V GS = 6V
V GS = 10V
V GS = 12V
Fig 2. Typical On-Resistance vs. Drain Current
2
4
6
8
10
12
14
16
18
20
V GS, Gate -to -Source Voltage (V)
0
2
4
6
8
R
D
S
(o
n
),
D
ra
in
-t
o
-S
o
ur
ce
O
n
R
e
si
st
a
nc
e
(m
)
I D = 89A
T J = 25°C
T J = 125°C
IRF7748L1TRPbF
Typical values (unless otherwise specified)
2
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© 2012 International Rectifier February
18,
2013
IRF7748L1TRPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
60
––– –––
V
V
GS
= 0V, I
D
= 250µA
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.022 –––
V/°C Reference to 25°C, I
D
= 2mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
1.7
2.2
m
V
GS
= 10V, I
D
= 89A
V
GS(th)
Gate Threshold Voltage
2.0
2.9
4.0
V
V
DS
= V
GS
, I
D
= 250µA
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
=60 V, V
GS
= 0V
––– ––– 250
V
DS
=60V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage
–––
––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage
–––
––– -100
V
GS
= -20V
gfs Forward
Transconductance
176
–––
–––
S
V
DS
= 10V, I
D
=89A
Q
g
Total Gate Charge
–––
146 220
Q
gs1
Pre– Vth Gate-to-Source Charge
–––
31
–––
V
DS
= 30V
Q
gs2
Post– Vth Gate-to-Source Charge
–––
12
–––
nC
V
GS
= 10V
Q
gd
Gate-to-Drain Charge
–––
40
–––
I
D
= 89A
Q
godr
Gate Charge Overdrive
–––
63
–––
See Fig.9
Q
sw
Switch Charge (Q
gs2 +
Q
gd)
––– 52 –––
Q
oss
Output Charge
–––
82
–––
nC
V
DS
= 16V,V
GS
= 0V
R
G
Gate Resistance
–––
1.3
–––
t
d(on)
Turn-On Delay Time
–––
19
–––
ns
V
DD
= 30V, V
GS
= 10V
t
r
Rise Time
–––
104 –––
I
D
= 89A
t
d(off)
Turn-Off Delay Time
–––
54
–––
R
G
= 1.8
t
f
Fall Time
–––
77
–––
C
iss
Input Capacitance
––– 8075 –––
pF
V
GS
= 0V
C
oss
Output Capacitance
––– 1150 –––
V
DS
= 50V
C
rss
Reverse Transfer Capacitance
–––
540 –––
ƒ = 1.0MHz
C
oss
Output Capacitance
––– 5390 –––
V
GS
=0V, V
DS
= 1.0V,ƒ =1.0MHz
C
oss
Output Capacitance
–––
850 –––
V
GS
=0V, V
DS
= 48V,ƒ =1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
––– ––– 85
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 592
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
–––
1.3
V
T
J
= 25°C,I
S
= 89A,V
GS
= 0V
t
rr
Reverse Recovery Time
––– 58 ––– ns T
J
= 25°C ,I
F
= 89A,V
DD
= 30V
Q
rr
Reverse Recovery Charge
––– 113 ––– nC di/dt = 100A/µs
V
GS(th)
/
T
J
Gate Threshold Voltage Temp. Coefficient
––– -9.9 ––– mV/°C
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%
3
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© 2012 International Rectifier February
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2013
IRF7748L1TRPbF
Notes:
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple incontact with top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Absolute Maximum Ratings
Symbol Parameter
Max.
Units
P
D
@T
C
= 25°C Power Dissipation
94
P
D
@T
C
= 100°C Power Dissipation
47
W
P
D
@T
A
= 25°C
Power Dissipation 3.3
T
P
Peak Soldering Temperature
270
T
J
Operating Junction and
-55 to + 175
°C
T
STG
Storage Temperature Range
Thermal Resistance
Symbol Parameter Typ.
Max.
Units
R
qJA
Junction-to-Ambient
––– 45
R
qJA
Junction-to-Ambient
12.5 –––
R
qJA
Junction-to-Ambient
20 –––
°C/W
R
qJC
Junction-to-Can
–––
1.6
R
qJA-PCB
Junction-to-PCB Mounted
–––
0.5
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
is measured at T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink (still air)
Fig 3. Maximum Effec ve Transient Thermal Impedance, Junc on‐to‐Case
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
he
rma
l R
es
po
ns
e
(
Z
th
JC
)
°
C
/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
4
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© 2012 International Rectifier February
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IRF7748L1TRPbF
Fig 4. Typical Output Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 6. Typical Transfer Characteristics
Fig 5. Typical Output Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
VGS
TOP 15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM
4.25V
60µs
PULSE WIDTH
Tj = 25°C
4.25V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
4.25V
60µs
PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM
4.25V
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
TJ = 25°C
VDS = 25V
60µs PULSE WIDTH
TJ = 175°C
-60
-20
20
60
100
140
180
TJ , Junction Temperature (°C)
0.4
0.8
1.2
1.6
2.0
R
D
S
(o
n)
,
D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
N
or
m
al
iz
ed
)
ID = 89A
VGS = 10V
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
, C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
50
100
150
200
QG, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
V
G
S
, G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(
V
)
VDS= 48V
VDS= 30V
VDS= 12V
ID= 89A
5
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© 2012 International Rectifier February
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2013
IRF7748L1TRPbF
Fig 11. Maximum Safe Operating Area
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
E
A
S
,
S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP 11.4A
19.1A
BOTTOM 89A
Fig 14. Maximum Avalanche Energy vs. Drain Current
-75 -50 -25 0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
G
S
(t
h)
,
G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(
V
)
ID = 1.0A
ID = 10mA
ID = 1.0mA
ID = 250µA
Fig 13. Typical Threshold Voltage vs. Junction Temperature
Fig 10. Typical Source-Drain Diode Forward Voltage
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
40
80
120
160
I D
,
D
ra
in
C
ur
re
nt
(
A
)
Fig 12. Maximum Drain Current vs. Case Temperature
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I S
D
, R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
TJ = 175°C
VGS = 0V
TJ = 25°C
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
1msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
DC
6
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© 2012 International Rectifier February
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IRF7748L1TRPbF
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
120
140
E
A
R
,
A
va
la
nc
he
E
ne
rg
y
(m
J)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 89A
Fig 15. Typical Avalanche Current vs. Pulse width
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see
AN-1005
)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
19a, 19b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T = Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av
= Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 3)
PD (ave) = 1/2 ( 1.3·BV·I
av
) =
T/ Z
thJC
I
av
= 2
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)·
t
av
Fig 16.
Maximum Avalanche Energy vs. Temperature
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
0.1
1
10
100
1000
A
va
la
nc
he
C
ur
re
nt
(
A
)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
0.10
0.01
0.05
Duty Cycle = Single Pulse
7
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© 2012 International Rectifier February
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2013
IRF7748L1TRPbF
Fig 19a. Unclamped Inductive Test Circuit
RG
I
AS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
Fig 20a. Switching Time Test Circuit
Fig 18a. Gate Charge Test Circuit
tp
V
(BR)DSS
I
AS
Fig 19b. Unclamped Inductive Waveforms
Fig 20b. Switching Time Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 18b. Gate Charge Waveform
8
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© 2012 International Rectifier February
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IRF7748L1TRPbF
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
DirectFET™Board Footprint, L6 Outline
(Large Size Can, 6-Source Pads).
Please see DirectFET application note
AN-1035
for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
G
D
S
D
D
D
D
D
S
S
S
S
S
9
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© 2012 International Rectifier February
18,
2013
IRF7748L1TRPbF
DirectFET
®
Outline Dimension, L6 Outline
(Large Size Can, 6-Source Pads).
Please see DirectFET application note
AN-1035
for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DirectFET
®
Part Marking
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
0.017
0.029
0.003
0.007
0.057
0.104
0.236
0.048
0.026
0.024
MAX
0.360
0.280
0.38
0.68
0.02
0.09
1.35
2.55
5.90
1.18
0.55
0.58
MIN
9.05
6.85
0.42
0.74
0.08
0.17
1.45
2.65
6.00
1.22
0.65
0.62
MAX
9.15
7.10
0.015
0.027
0.003
0.001
0.100
0.053
0.232
0.046
0.023
0.022
MIN
0.270
0.356
METRIC
IMPERIAL
DIMENSIONS
0.98
1.02
0.73
0.77
0.040
0.039
0.030
0.029
L1
0.159
3.95
4.05
0.155
L2
0.214
5.35
5.45
0.210
Dimensions are shown in
millimeters (inches)
GATE MARKING
PART NUMBER
LOGO
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
+
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
10
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© 2012 International Rectifier February
18,
2013
IRF7748L1TRPbF
DirectFET
®
Tape & Reel Dimension (Showing component orientation).
Qualification Information
†
Qualification Level
Industrial
††
*
Moisture Sensitivity Level
DirectFET
MSL1
(per JEDEC J-STD-020D
†††)
RoHS Compliant
Yes
† Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
*
Industrial qualification standards except autoclave test conditions
.
IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245, USA
To contact Interna onal Rec fier, please visit
h p://www.irf.com/whoto‐call/
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
IMPERIAL
MIN
4.69
0.154
0.623
0.291
0.283
0.390
0.059
0.059
MAX
12.10
4.10
16.30
7.60
7.40
10.10
N.C
1.60
MIN
11.90
3.90
15.90
7.40
7.20
9.90
1.50
1.50
METRIC
DIMENSIONS
MAX
0.476
0.161
0.642
0.299
0.291
0.398
N.C
0.063
+
NOTE:
Controlling dimensions in mm
Std reel quantity is 4000 parts. (ordered as IRF7748L1TRPBF).
REEL DIMENSIONS
MAX
N.C
N.C
0.520
N.C
3.940
0.880
0.720
0.760
IMPERIAL
MIN
330.00
20.20
12.80
1.50
99.00
N.C
16.40
15.90
STANDARD OPTION (QTY 4000)
CODE
A
B
C
D
E
F
G
H
MAX
N.C
N.C
13.20
N.C
100.00
22.40
18.40
19.40
MIN
12.992
0.795
0.504
0.059
3.900
N.C
0.650
0.630
METRIC
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
Date Comments
2/13/13 TR1 option removed and Tape & Reel Info updated accordingly. Hyperlinks added throw-out the document
Revision History
1
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© 2012 International Rectifier February
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2013
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
IRF7748L1TRPbF
DirectFET Large Can
Tape and Reel
4000
IRF7748L1TRPbF
Applications
RoHS Compliant, Halogen Free
Lead-Free (Qualified up to 260°C Reflow)
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Industrial Qualified
DirectFET™ Power MOSFET
Fig 1. Typical On-Resistance vs. Gate Voltage
DirectFET™ ISOMETRIC
L6
Ordering Information
V
DSS
V
GS
R
DS(on)
60V min
±20V max
1.7m
@ 10V
Q
g tot
Q
gd
V
gs(th)
146nC 40nC
2.9V
D
D
G
S
S
S
S
S
S
Applicable DirectFET Outline and Substrate Outline
SB
SC
M2
M4
L4
L6
L8
Description
The IRF7748L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor
phase, infra-red or convection soldering techniques, when
application note AN-1035
is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7748L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for sys-
tem reliability improvements, and makes this device ideal for high performance power converters.
Absolute Maximum Ratings
Parameter Max.
Units
V
DS
Drain-to-Source Voltage
60
V
V
GS
Gate-to-Source Voltage
±20
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 148
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 104
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 28
A
I
DM
Pulsed Drain Current 592
E
AS
Single Pulse Avalanche Energy 129
mJ
I
AR
Avalanche Current 89
A
Notes
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.033mH, R
G
= 50
, I
AS
= 89A.
0
25
50
75
100
125
150
175
200
ID, Drain Current (A)
1.0
1.5
2.0
2.5
3.0
T
yp
ic
al
R
D
S
(o
n)
( m
V GS = 7V
V GS = 6V
V GS = 10V
V GS = 12V
Fig 2. Typical On-Resistance vs. Drain Current
2
4
6
8
10
12
14
16
18
20
V GS, Gate -to -Source Voltage (V)
0
2
4
6
8
R
D
S
(o
n
),
D
ra
in
-t
o
-S
o
ur
ce
O
n
R
e
si
st
a
nc
e
(m
)
I D = 89A
T J = 25°C
T J = 125°C
IRF7748L1TRPbF
Typical values (unless otherwise specified)
2
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© 2012 International Rectifier February
18,
2013
IRF7748L1TRPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
60
––– –––
V
V
GS
= 0V, I
D
= 250µA
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.022 –––
V/°C Reference to 25°C, I
D
= 2mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
1.7
2.2
m
V
GS
= 10V, I
D
= 89A
V
GS(th)
Gate Threshold Voltage
2.0
2.9
4.0
V
V
DS
= V
GS
, I
D
= 250µA
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
=60 V, V
GS
= 0V
––– ––– 250
V
DS
=60V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage
–––
––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage
–––
––– -100
V
GS
= -20V
gfs Forward
Transconductance
176
–––
–––
S
V
DS
= 10V, I
D
=89A
Q
g
Total Gate Charge
–––
146 220
Q
gs1
Pre– Vth Gate-to-Source Charge
–––
31
–––
V
DS
= 30V
Q
gs2
Post– Vth Gate-to-Source Charge
–––
12
–––
nC
V
GS
= 10V
Q
gd
Gate-to-Drain Charge
–––
40
–––
I
D
= 89A
Q
godr
Gate Charge Overdrive
–––
63
–––
See Fig.9
Q
sw
Switch Charge (Q
gs2 +
Q
gd)
––– 52 –––
Q
oss
Output Charge
–––
82
–––
nC
V
DS
= 16V,V
GS
= 0V
R
G
Gate Resistance
–––
1.3
–––
t
d(on)
Turn-On Delay Time
–––
19
–––
ns
V
DD
= 30V, V
GS
= 10V
t
r
Rise Time
–––
104 –––
I
D
= 89A
t
d(off)
Turn-Off Delay Time
–––
54
–––
R
G
= 1.8
t
f
Fall Time
–––
77
–––
C
iss
Input Capacitance
––– 8075 –––
pF
V
GS
= 0V
C
oss
Output Capacitance
––– 1150 –––
V
DS
= 50V
C
rss
Reverse Transfer Capacitance
–––
540 –––
ƒ = 1.0MHz
C
oss
Output Capacitance
––– 5390 –––
V
GS
=0V, V
DS
= 1.0V,ƒ =1.0MHz
C
oss
Output Capacitance
–––
850 –––
V
GS
=0V, V
DS
= 48V,ƒ =1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
––– ––– 85
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 592
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
–––
1.3
V
T
J
= 25°C,I
S
= 89A,V
GS
= 0V
t
rr
Reverse Recovery Time
––– 58 ––– ns T
J
= 25°C ,I
F
= 89A,V
DD
= 30V
Q
rr
Reverse Recovery Charge
––– 113 ––– nC di/dt = 100A/µs
V
GS(th)
/
T
J
Gate Threshold Voltage Temp. Coefficient
––– -9.9 ––– mV/°C
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%
3
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© 2012 International Rectifier February
18,
2013
IRF7748L1TRPbF
Notes:
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple incontact with top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Absolute Maximum Ratings
Symbol Parameter
Max.
Units
P
D
@T
C
= 25°C Power Dissipation
94
P
D
@T
C
= 100°C Power Dissipation
47
W
P
D
@T
A
= 25°C
Power Dissipation 3.3
T
P
Peak Soldering Temperature
270
T
J
Operating Junction and
-55 to + 175
°C
T
STG
Storage Temperature Range
Thermal Resistance
Symbol Parameter Typ.
Max.
Units
R
qJA
Junction-to-Ambient
––– 45
R
qJA
Junction-to-Ambient
12.5 –––
R
qJA
Junction-to-Ambient
20 –––
°C/W
R
qJC
Junction-to-Can
–––
1.6
R
qJA-PCB
Junction-to-PCB Mounted
–––
0.5
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
is measured at T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink (still air)
Fig 3. Maximum Effec ve Transient Thermal Impedance, Junc on‐to‐Case
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
he
rma
l R
es
po
ns
e
(
Z
th
JC
)
°
C
/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
4
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© 2012 International Rectifier February
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2013
IRF7748L1TRPbF
Fig 4. Typical Output Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 6. Typical Transfer Characteristics
Fig 5. Typical Output Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
VGS
TOP 15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM
4.25V
60µs
PULSE WIDTH
Tj = 25°C
4.25V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
4.25V
60µs
PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM
4.25V
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
TJ = 25°C
VDS = 25V
60µs PULSE WIDTH
TJ = 175°C
-60
-20
20
60
100
140
180
TJ , Junction Temperature (°C)
0.4
0.8
1.2
1.6
2.0
R
D
S
(o
n)
,
D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
N
or
m
al
iz
ed
)
ID = 89A
VGS = 10V
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
, C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
50
100
150
200
QG, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
V
G
S
, G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(
V
)
VDS= 48V
VDS= 30V
VDS= 12V
ID= 89A
5
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© 2012 International Rectifier February
18,
2013
IRF7748L1TRPbF
Fig 11. Maximum Safe Operating Area
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
E
A
S
,
S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP 11.4A
19.1A
BOTTOM 89A
Fig 14. Maximum Avalanche Energy vs. Drain Current
-75 -50 -25 0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
G
S
(t
h)
,
G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(
V
)
ID = 1.0A
ID = 10mA
ID = 1.0mA
ID = 250µA
Fig 13. Typical Threshold Voltage vs. Junction Temperature
Fig 10. Typical Source-Drain Diode Forward Voltage
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
40
80
120
160
I D
,
D
ra
in
C
ur
re
nt
(
A
)
Fig 12. Maximum Drain Current vs. Case Temperature
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I S
D
, R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
TJ = 175°C
VGS = 0V
TJ = 25°C
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
1msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
DC
6
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© 2012 International Rectifier February
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2013
IRF7748L1TRPbF
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
120
140
E
A
R
,
A
va
la
nc
he
E
ne
rg
y
(m
J)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 89A
Fig 15. Typical Avalanche Current vs. Pulse width
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see
AN-1005
)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
19a, 19b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T = Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av
= Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 3)
PD (ave) = 1/2 ( 1.3·BV·I
av
) =
T/ Z
thJC
I
av
= 2
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)·
t
av
Fig 16.
Maximum Avalanche Energy vs. Temperature
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
0.1
1
10
100
1000
A
va
la
nc
he
C
ur
re
nt
(
A
)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
0.10
0.01
0.05
Duty Cycle = Single Pulse
7
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© 2012 International Rectifier February
18,
2013
IRF7748L1TRPbF
Fig 19a. Unclamped Inductive Test Circuit
RG
I
AS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
Fig 20a. Switching Time Test Circuit
Fig 18a. Gate Charge Test Circuit
tp
V
(BR)DSS
I
AS
Fig 19b. Unclamped Inductive Waveforms
Fig 20b. Switching Time Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 18b. Gate Charge Waveform
8
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© 2012 International Rectifier February
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2013
IRF7748L1TRPbF
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
DirectFET™Board Footprint, L6 Outline
(Large Size Can, 6-Source Pads).
Please see DirectFET application note
AN-1035
for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
G
D
S
D
D
D
D
D
S
S
S
S
S
9
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© 2012 International Rectifier February
18,
2013
IRF7748L1TRPbF
DirectFET
®
Outline Dimension, L6 Outline
(Large Size Can, 6-Source Pads).
Please see DirectFET application note
AN-1035
for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DirectFET
®
Part Marking
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
0.017
0.029
0.003
0.007
0.057
0.104
0.236
0.048
0.026
0.024
MAX
0.360
0.280
0.38
0.68
0.02
0.09
1.35
2.55
5.90
1.18
0.55
0.58
MIN
9.05
6.85
0.42
0.74
0.08
0.17
1.45
2.65
6.00
1.22
0.65
0.62
MAX
9.15
7.10
0.015
0.027
0.003
0.001
0.100
0.053
0.232
0.046
0.023
0.022
MIN
0.270
0.356
METRIC
IMPERIAL
DIMENSIONS
0.98
1.02
0.73
0.77
0.040
0.039
0.030
0.029
L1
0.159
3.95
4.05
0.155
L2
0.214
5.35
5.45
0.210
Dimensions are shown in
millimeters (inches)
GATE MARKING
PART NUMBER
LOGO
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
+
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
10
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© 2012 International Rectifier February
18,
2013
IRF7748L1TRPbF
DirectFET
®
Tape & Reel Dimension (Showing component orientation).
Qualification Information
†
Qualification Level
Industrial
††
*
Moisture Sensitivity Level
DirectFET
MSL1
(per JEDEC J-STD-020D
†††)
RoHS Compliant
Yes
† Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
*
Industrial qualification standards except autoclave test conditions
.
IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245, USA
To contact Interna onal Rec fier, please visit
h p://www.irf.com/whoto‐call/
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
IMPERIAL
MIN
4.69
0.154
0.623
0.291
0.283
0.390
0.059
0.059
MAX
12.10
4.10
16.30
7.60
7.40
10.10
N.C
1.60
MIN
11.90
3.90
15.90
7.40
7.20
9.90
1.50
1.50
METRIC
DIMENSIONS
MAX
0.476
0.161
0.642
0.299
0.291
0.398
N.C
0.063
+
NOTE:
Controlling dimensions in mm
Std reel quantity is 4000 parts. (ordered as IRF7748L1TRPBF).
REEL DIMENSIONS
MAX
N.C
N.C
0.520
N.C
3.940
0.880
0.720
0.760
IMPERIAL
MIN
330.00
20.20
12.80
1.50
99.00
N.C
16.40
15.90
STANDARD OPTION (QTY 4000)
CODE
A
B
C
D
E
F
G
H
MAX
N.C
N.C
13.20
N.C
100.00
22.40
18.40
19.40
MIN
12.992
0.795
0.504
0.059
3.900
N.C
0.650
0.630
METRIC
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
Date Comments
2/13/13 TR1 option removed and Tape & Reel Info updated accordingly. Hyperlinks added throw-out the document
Revision History