IRF7425PbF Product Datasheet

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HEXFET

®

 Power MOSFET

Top View

8

1

2

3

4

5

6

7

D

D

D

G

S

A

D

S

S

SO-8

IRF7425PbF

Parameter

Max.

Units

R

θJA

Maximum Junction-to-Ambient

ƒ

50

°C/W

Thermal Resistance

Parameter

Max.

Units

V

DS

Drain- Source Voltage

-20

V

I

D

 @ T

A

 = 25°C

Continuous Drain Current, V

GS

 @ -4.5V

-15

I

D

 @ T

A

= 70°C

Continuous Drain Current, V

GS

 @ -4.5V

-12

A

I

DM

Pulsed Drain Current 



-60

P

@T

A

 = 25°C

Power Dissipation 

ƒ

2.5

P

@T

A

 = 70°C

Power Dissipation 

ƒ

1.6

Linear Derating Factor

20

mW/°C

V

GS

Gate-to-Source Voltage

 ± 12

V

T

J, 

T

STG

Junction and Storage Temperature Range

-55  to + 150

°C

Absolute Maximum Ratings

W

V

DS

-20

V

R

DS(on) max 

(@V

GS

 =  -4.5V)

8.2

R

DS(on) max 

(@V

GS

 =  -2.5V)

13

Q

g (typical)

87

nC

I

(@T

A

 = 25°C)

-15

A

mΩ

Features

Benefits

Industry-standard pinout SO-8 Package

Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques                        

Easier Manufacturing

RoHS Compliant, Halogen-Free

Environmentally Friendlier

MSL1,Consumer qualification

Increased Reliability

Form

Quantity

Tube/Bulk

95

IRF7425PbF

Tape and Reel

4000

IRF7425TRPbF

Package Type

Standard Pack

 Orderable Part Number

IRF7425PbF

SO-8

Base Part  Number

  1

  

       

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© 

2013 International Rectifier  

Submit Datasheet Feedback

      October 29, 2013

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IRF7425PbF

    2

   

         

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3

 Parameter

Min. Typ. Max. Units

       Conditions

I

S

Continuous Source Current

MOSFET symbol

(Body Diode)

showing  the

I

SM

Pulsed Source Current

integral reverse

(Body Diode) 



p-n junction diode.

V

SD

Diode Forward Voltage

–––

–––

-1.2

V

T

J

 = 25°C, I

S

 = -2.5A, V

GS

 = 0V

 ‚

t

rr

Reverse Recovery Time

–––

120  180

ns

T

J

 = 25°C, I

F

 = -2.5A

Q

rr

Reverse Recovery Charge

–––

160  240

nC

di/dt  =  -100A/μs

 

‚

Source-Drain Ratings and Characteristics

A

-60

–––

–––

–––

-2.5

–––

S

D

G



 Repetitive rating;  pulse width limited by

     max. junction temperature.

Notes:

‚

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

Parameter

Min. Typ. Max. Units

Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage

-20

–––

–––

V

V

GS

 = 0V, I

D

 = -250μA

ΔV

(BR)DSS

/

ΔT

J

Breakdown Voltage Temp. Coefficient

––– 0.010 –––

V/°C Reference to 25°C, I

D

 = -1mA

––– –––

 8.2

V

GS

 = -4.5V, I

D

 = -15A 

‚

––– –––

 13

V

GS

 = -2.5V, I

D

 = -13A 

‚

V

GS(th)

Gate Threshold Voltage

-0.45 ––– -1.2

V

V

DS

 = V

GS

, I

D

 = -250μA

g

fs

Forward Transconductance

44

–––

–––

S

V

DS

 = -10V, I

D

 = -15A

––– ––– -1.0

V

DS

 = -16V, V

GS

 = 0V

––– –––

-25

V

DS

 = -16V, V

GS

 = 0V, T

J

 = 70°C

Gate-to-Source Forward Leakage

––– ––– -100

V

GS

 = -12V

Gate-to-Source Reverse Leakage

––– –––

100

V

GS

 = 12V

Q

g

Total Gate Charge

–––

87

130

I

D

 = -15A

Q

gs

Gate-to-Source Charge

–––

18

27

nC

V

DS

 = -10V

Q

gd

Gate-to-Drain ("Miller") Charge

–––

21

32

V

GS

 = -4.5V

t

d(on)

Turn-On Delay Time

–––

13

–––

V

DD

 = -10V 

‚

t

r

Rise Time

–––

20

–––

I

D

 = -1.0A

t

d(off)

Turn-Off Delay Time

––– 230

–––

R

G

 = 6.0

Ω

t

f

Fall Time

––– 160

–––

V

GS

 = -4.5V

C

iss

Input Capacitance

––– 7980 –––

V

GS

 = 0V

C

oss

Output Capacitance

––– 1480 –––

pF

V

DS

 = -15V

C

rss

Reverse Transfer Capacitance

––– 980

–––

ƒ = 1.0kHz

Electrical Characteristics @ T

J

 = 25°C (unless otherwise specified)

I

GSS

µA

m

Ω

R

DS(on)

Static Drain-to-Source On-Resistance

I

DSS

Drain-to-Source Leakage Current

nA

ns

ƒ

  Surface mounted on 1 in square Cu board,  t ≤  10sec.

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Fig 4.  Normalized On-Resistance

Vs. Temperature

Fig 2.  Typical Output Characteristics

Fig 1.  Typical Output Characteristics

Fig 3.  Typical Transfer Characteristics

0.01

0.1

 1

 10

 100

 1000

0.1

 1

 10

 100

20μs PULSE WIDTH

T  = 25 C

J

°

TOP

BOTTOM

VGS

-7.0V

-5.0V

-4.5V

-2.5V

-1.8V

-1.5V

-1.2V

-1.0V

-V     , Drain-to-Source Voltage (V)

-I   ,  Drain-to-Source Current (A)

DS

D

-1.0V

0.1

 1

 10

 100

 1000

0.1

 1

 10

 100

20μs PULSE WIDTH

T  = 150 C

J

°

TOP

BOTTOM

VGS

-7.0V

-5.0V

-4.5V

-2.5V

-1.8V

-1.5V

-1.2V

-1.0V

-V     , Drain-to-Source Voltage (V)

-I   ,  Drain-to-Source Current (A)

DS

D

-1.0V

0.1

 1

 10

 100

1.0

1.2

1.4

1.6

1.8

2.0

2.2

V      = -15V
20μs PULSE WIDTH

DS

-V     , Gate-to-Source Voltage (V)

-I   ,  Drain-to-Source Current (A)

GS

D

T  = 25  C

J

°

T  = 150  C

J

°

-60 -40 -20

0

20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T  , Junction Temperature (  C)

R

            , D

rain-to-S

ource O

n R

esistance

(Normalized)

J

D

S

(on)

°

V

=

I =

GS

D

-4.5V

-15A

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3

Fig 8.  Maximum Safe Operating Area

Fig 6.  Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5.  Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7.  Typical Source-Drain Diode

Forward Voltage

0

40

80

120

160

0

2

4

6

8

Q   , Total Gate Charge (nC)

-V     , Gate-to-Source Voltage (V)

G

GS

I =

D

-15A

V

=-10V

DS

V

=-16V

DS

0.1

 1

 10

 100

0.2

0.4

0.6

0.8

1.0

-V     ,Source-to-Drain Voltage (V)

-I     , Reverse Drain Current (A)

SD

SD

V      = 0 V 

GS

T  = 25  C

J

°

T  = 150  C

J

°

 1

 10

 100

 1000

0.1

 1

 10

 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

 Single Pulse

 T

 T

= 150  C

= 25  C

°

°

J

A

-V     , Drain-to-Source Voltage (V)

-I   , Drain Current (A)I   , Drain Current (A)

DS

D

100us

1ms

10ms

 1

 10

 100

0

2000

4000

6000

8000

10000

12000

-V     , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V

C
C

C

=

=
=

=

0V,

C
C

C

f = 1MHz

+ C

+ C

C      SHORTED

GS
iss

gs

gd ,

ds

rss

gd

oss

ds

gd

C

iss

C

oss

C

rss

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IRF7425PbF

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3

Fig 11.  Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9.  Maximum Drain Current Vs.

Case Temperature

25

50

75

100

125

150

0

3

6

9

12

15

T   , Case Temperature (  C)

-I   , Drain Current (A)

°

C

D

V

DS

V

GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

V

DD

R

G

D.U.T.

+

-

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10a.  Switching Time Test Circuit

Fig 10b.  Switching Time Waveforms

0.01

0.1

 1

 10

 100

0.00001

0.0001

0.001

0.01

0.1

 1

 10

 100

Notes:

1. Duty factor D = t   / t
2. Peak T = P

x  Z

+ T

1

2

J

DM

thJA

A

P

t

t

DM

1

2

t  , Rectangular Pulse Duration (sec)

Ther

m

al

 Response

(Z

        )

1

th

JA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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Fig 13.   Typical On-Resistance Vs.

Drain Current

Fig 12.   Typical On-Resistance Vs.

Gate Voltage

Fig 14b.  Gate Charge Test Circuit

Fig 14a.  Basic Gate Charge Waveform

Q

G

Q

GS

Q

GD

V

G

Charge

D.U.T.

V

DS

I

D

I

G

-3mA

V

GS

.3

μF

50K

Ω

.2

μF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

1.0

2.0

3.0

4.0

5.0

-VGS, Gate -to -Source Voltage  (V)

0.005

0.010

0.015

R

D

S

(o

n)

,  

D

ra

in

-t

-S

ou

rc

O

R

es

is

ta

nc

)

ID = -15A

0

10

20

30

40

50

60

-ID , Drain Current (A)

0.005

0.006

0.007

0.008

0.009

0.010

R

D

S

 (

on

, D

ra

in

-t

o-

S

ou

rc

O

R

es

is

ta

nc

)

VGS = -2.5V

VGS = -4.5V

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Fig 15.  Typical Vgs(th) Variance Vs.

 Juction Temperature

Fig 16

.   Typical Power Vs. Time

-75

-50

-25

0

25

50

75

100 125 150

TJ , Temperature ( °C )

1.5

2.0

2.5

3.0

-V

G

S

(t

h)

 ,

  V

ar

ia

ce

 (

 V

 )

ID = -250μA

0.001

0.010

0.100

1.000

10.000

100.000

Time (sec)

0

20

40

60

80

100

120

P

ow

er

 (

W

)

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IRF7425PbF

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3

SO-8 Package Outline

Dimensions are shown in millimeters (inches)

SO-8 Part Marking

e 1

D
E

y

b

A
A1

H
K
L

.189
.1497

 0°

.013

.050  BASIC

.0532
.0040

.2284
.0099
.016

.1968
.1574

 8°

.020

.0688
.0098

.2440
.0196
.050

4.80
3.80

0.33

1.35
0.10

5.80
0.25
0.40

 0°

1.27  BASIC

5.00
4.00

0.51

1.75
0.25

6.20
0.50
1.27

MIN

MAX

MILLIMETERS

INCHES

MIN

MAX

DIM

 8°

e

c

.0075

.0098

0.19

0.25

.025  BASIC

0.635  BASIC

8

7

5

6

5

D

B

E

A

e

6X

H

0.25 [.010] 

A

6

7

K x 45°

8X L

8X c

y

0.25 [.010] 

C A B

e1

A

A1

8X b

C

0.10 [.004] 

4

3

1

2

FOOTPRINT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

NOT ES:
1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2.  CONT ROLLING DIMENSION: MILLIMET ER
3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

5   DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.

6   DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7   DIMENSION IS T HE LENGT H OF LEAD FOR SOLDERING TO
     A SUBST RAT E.

     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

8X 1.78 [.070]

DATE CODE (YWW)

XXXX

INTERNATIONAL

RECTIFIER

LOGO

F7101

Y =   LAS T DIGIT OF THE YEAR

PART  NUMBER

LOT CODE

WW =  WEEK

EXAMPLE: THIS IS  AN IRF7101 (MOSFET)

P =  DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

A =  ASSEMBLY SITE CODE

Note: For the most current drawing please refer to IR website at: 

http://www.irf.com/package/

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IRF7425PbF

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    October 29, 201

3

 330.00
(12.992)
  MAX.

14.40 ( .566 )
12.40 ( .488 )

NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 )

NOTES:
1.   CONTROLLING DIMENSION : MILLIMETER.

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3.   OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel 

(Dimensions are shown in millimeters (inches))

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit 

http://www.irf.com/whoto-call/

†     Qualification standards can be found at International Rectifier’s web site:

 

http://www.irf.com/product-info/reliability

††   

Applicable version of JEDEC standard at the time of product release

MS L1

(per JEDEC J-S TD-020D

†† 

)

RoHS compliant

Yes

Qualification information

Qualification level

Consumer

(per JEDEC JES D47F

††

 guidelines)

Moisture Sensitivity Level

SO-8

Note: For the most current drawing please refer to IR website at: 

http://www.irf.com/package/

Date

Comments

• Added ordering information on page 1.
• Updated datasheet with new IR corporate template.

Revision History 

10/29/2013

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HEXFET

®

 Power MOSFET

Top View

8

1

2

3

4

5

6

7

D

D

D

G

S

A

D

S

S

SO-8

IRF7425PbF

Parameter

Max.

Units

R

θJA

Maximum Junction-to-Ambient

ƒ

50

°C/W

Thermal Resistance

Parameter

Max.

Units

V

DS

Drain- Source Voltage

-20

V

I

D

 @ T

A

 = 25°C

Continuous Drain Current, V

GS

 @ -4.5V

-15

I

D

 @ T

A

= 70°C

Continuous Drain Current, V

GS

 @ -4.5V

-12

A

I

DM

Pulsed Drain Current 



-60

P

@T

A

 = 25°C

Power Dissipation 

ƒ

2.5

P

@T

A

 = 70°C

Power Dissipation 

ƒ

1.6

Linear Derating Factor

20

mW/°C

V

GS

Gate-to-Source Voltage

 ± 12

V

T

J, 

T

STG

Junction and Storage Temperature Range

-55  to + 150

°C

Absolute Maximum Ratings

W

V

DS

-20

V

R

DS(on) max 

(@V

GS

 =  -4.5V)

8.2

R

DS(on) max 

(@V

GS

 =  -2.5V)

13

Q

g (typical)

87

nC

I

(@T

A

 = 25°C)

-15

A

mΩ

Features

Benefits

Industry-standard pinout SO-8 Package

Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques                        

Easier Manufacturing

RoHS Compliant, Halogen-Free

Environmentally Friendlier

MSL1,Consumer qualification

Increased Reliability

Form

Quantity

Tube/Bulk

95

IRF7425PbF

Tape and Reel

4000

IRF7425TRPbF

Package Type

Standard Pack

 Orderable Part Number

IRF7425PbF

SO-8

Base Part  Number

  1

  

       

www.irf.com  

© 

2013 International Rectifier  

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      October 29, 2013

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    October 29, 201

3

 Parameter

Min. Typ. Max. Units

       Conditions

I

S

Continuous Source Current

MOSFET symbol

(Body Diode)

showing  the

I

SM

Pulsed Source Current

integral reverse

(Body Diode) 



p-n junction diode.

V

SD

Diode Forward Voltage

–––

–––

-1.2

V

T

J

 = 25°C, I

S

 = -2.5A, V

GS

 = 0V

 ‚

t

rr

Reverse Recovery Time

–––

120  180

ns

T

J

 = 25°C, I

F

 = -2.5A

Q

rr

Reverse Recovery Charge

–––

160  240

nC

di/dt  =  -100A/μs

 

‚

Source-Drain Ratings and Characteristics

A

-60

–––

–––

–––

-2.5

–––

S

D

G



 Repetitive rating;  pulse width limited by

     max. junction temperature.

Notes:

‚

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

Parameter

Min. Typ. Max. Units

Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage

-20

–––

–––

V

V

GS

 = 0V, I

D

 = -250μA

ΔV

(BR)DSS

/

ΔT

J

Breakdown Voltage Temp. Coefficient

––– 0.010 –––

V/°C Reference to 25°C, I

D

 = -1mA

––– –––

 8.2

V

GS

 = -4.5V, I

D

 = -15A 

‚

––– –––

 13

V

GS

 = -2.5V, I

D

 = -13A 

‚

V

GS(th)

Gate Threshold Voltage

-0.45 ––– -1.2

V

V

DS

 = V

GS

, I

D

 = -250μA

g

fs

Forward Transconductance

44

–––

–––

S

V

DS

 = -10V, I

D

 = -15A

––– ––– -1.0

V

DS

 = -16V, V

GS

 = 0V

––– –––

-25

V

DS

 = -16V, V

GS

 = 0V, T

J

 = 70°C

Gate-to-Source Forward Leakage

––– ––– -100

V

GS

 = -12V

Gate-to-Source Reverse Leakage

––– –––

100

V

GS

 = 12V

Q

g

Total Gate Charge

–––

87

130

I

D

 = -15A

Q

gs

Gate-to-Source Charge

–––

18

27

nC

V

DS

 = -10V

Q

gd

Gate-to-Drain ("Miller") Charge

–––

21

32

V

GS

 = -4.5V

t

d(on)

Turn-On Delay Time

–––

13

–––

V

DD

 = -10V 

‚

t

r

Rise Time

–––

20

–––

I

D

 = -1.0A

t

d(off)

Turn-Off Delay Time

––– 230

–––

R

G

 = 6.0

Ω

t

f

Fall Time

––– 160

–––

V

GS

 = -4.5V

C

iss

Input Capacitance

––– 7980 –––

V

GS

 = 0V

C

oss

Output Capacitance

––– 1480 –––

pF

V

DS

 = -15V

C

rss

Reverse Transfer Capacitance

––– 980

–––

ƒ = 1.0kHz

Electrical Characteristics @ T

J

 = 25°C (unless otherwise specified)

I

GSS

µA

m

Ω

R

DS(on)

Static Drain-to-Source On-Resistance

I

DSS

Drain-to-Source Leakage Current

nA

ns

ƒ

  Surface mounted on 1 in square Cu board,  t ≤  10sec.

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Fig 4.  Normalized On-Resistance

Vs. Temperature

Fig 2.  Typical Output Characteristics

Fig 1.  Typical Output Characteristics

Fig 3.  Typical Transfer Characteristics

0.01

0.1

 1

 10

 100

 1000

0.1

 1

 10

 100

20μs PULSE WIDTH

T  = 25 C

J

°

TOP

BOTTOM

VGS

-7.0V

-5.0V

-4.5V

-2.5V

-1.8V

-1.5V

-1.2V

-1.0V

-V     , Drain-to-Source Voltage (V)

-I   ,  Drain-to-Source Current (A)

DS

D

-1.0V

0.1

 1

 10

 100

 1000

0.1

 1

 10

 100

20μs PULSE WIDTH

T  = 150 C

J

°

TOP

BOTTOM

VGS

-7.0V

-5.0V

-4.5V

-2.5V

-1.8V

-1.5V

-1.2V

-1.0V

-V     , Drain-to-Source Voltage (V)

-I   ,  Drain-to-Source Current (A)

DS

D

-1.0V

0.1

 1

 10

 100

1.0

1.2

1.4

1.6

1.8

2.0

2.2

V      = -15V
20μs PULSE WIDTH

DS

-V     , Gate-to-Source Voltage (V)

-I   ,  Drain-to-Source Current (A)

GS

D

T  = 25  C

J

°

T  = 150  C

J

°

-60 -40 -20

0

20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T  , Junction Temperature (  C)

R

            , D

rain-to-S

ource O

n R

esistance

(Normalized)

J

D

S

(on)

°

V

=

I =

GS

D

-4.5V

-15A

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Fig 8.  Maximum Safe Operating Area

Fig 6.  Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5.  Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7.  Typical Source-Drain Diode

Forward Voltage

0

40

80

120

160

0

2

4

6

8

Q   , Total Gate Charge (nC)

-V     , Gate-to-Source Voltage (V)

G

GS

I =

D

-15A

V

=-10V

DS

V

=-16V

DS

0.1

 1

 10

 100

0.2

0.4

0.6

0.8

1.0

-V     ,Source-to-Drain Voltage (V)

-I     , Reverse Drain Current (A)

SD

SD

V      = 0 V 

GS

T  = 25  C

J

°

T  = 150  C

J

°

 1

 10

 100

 1000

0.1

 1

 10

 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

 Single Pulse

 T

 T

= 150  C

= 25  C

°

°

J

A

-V     , Drain-to-Source Voltage (V)

-I   , Drain Current (A)I   , Drain Current (A)

DS

D

100us

1ms

10ms

 1

 10

 100

0

2000

4000

6000

8000

10000

12000

-V     , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V

C
C

C

=

=
=

=

0V,

C
C

C

f = 1MHz

+ C

+ C

C      SHORTED

GS
iss

gs

gd ,

ds

rss

gd

oss

ds

gd

C

iss

C

oss

C

rss

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Fig 11.  Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9.  Maximum Drain Current Vs.

Case Temperature

25

50

75

100

125

150

0

3

6

9

12

15

T   , Case Temperature (  C)

-I   , Drain Current (A)

°

C

D

V

DS

V

GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

V

DD

R

G

D.U.T.

+

-

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10a.  Switching Time Test Circuit

Fig 10b.  Switching Time Waveforms

0.01

0.1

 1

 10

 100

0.00001

0.0001

0.001

0.01

0.1

 1

 10

 100

Notes:

1. Duty factor D = t   / t
2. Peak T = P

x  Z

+ T

1

2

J

DM

thJA

A

P

t

t

DM

1

2

t  , Rectangular Pulse Duration (sec)

Ther

m

al

 Response

(Z

        )

1

th

JA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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Fig 13.   Typical On-Resistance Vs.

Drain Current

Fig 12.   Typical On-Resistance Vs.

Gate Voltage

Fig 14b.  Gate Charge Test Circuit

Fig 14a.  Basic Gate Charge Waveform

Q

G

Q

GS

Q

GD

V

G

Charge

D.U.T.

V

DS

I

D

I

G

-3mA

V

GS

.3

μF

50K

Ω

.2

μF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

1.0

2.0

3.0

4.0

5.0

-VGS, Gate -to -Source Voltage  (V)

0.005

0.010

0.015

R

D

S

(o

n)

,  

D

ra

in

-t

-S

ou

rc

O

R

es

is

ta

nc

)

ID = -15A

0

10

20

30

40

50

60

-ID , Drain Current (A)

0.005

0.006

0.007

0.008

0.009

0.010

R

D

S

 (

on

, D

ra

in

-t

o-

S

ou

rc

O

R

es

is

ta

nc

)

VGS = -2.5V

VGS = -4.5V

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Fig 15.  Typical Vgs(th) Variance Vs.

 Juction Temperature

Fig 16

.   Typical Power Vs. Time

-75

-50

-25

0

25

50

75

100 125 150

TJ , Temperature ( °C )

1.5

2.0

2.5

3.0

-V

G

S

(t

h)

 ,

  V

ar

ia

ce

 (

 V

 )

ID = -250μA

0.001

0.010

0.100

1.000

10.000

100.000

Time (sec)

0

20

40

60

80

100

120

P

ow

er

 (

W

)

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SO-8 Package Outline

Dimensions are shown in millimeters (inches)

SO-8 Part Marking

e 1

D
E

y

b

A
A1

H
K
L

.189
.1497

 0°

.013

.050  BASIC

.0532
.0040

.2284
.0099
.016

.1968
.1574

 8°

.020

.0688
.0098

.2440
.0196
.050

4.80
3.80

0.33

1.35
0.10

5.80
0.25
0.40

 0°

1.27  BASIC

5.00
4.00

0.51

1.75
0.25

6.20
0.50
1.27

MIN

MAX

MILLIMETERS

INCHES

MIN

MAX

DIM

 8°

e

c

.0075

.0098

0.19

0.25

.025  BASIC

0.635  BASIC

8

7

5

6

5

D

B

E

A

e

6X

H

0.25 [.010] 

A

6

7

K x 45°

8X L

8X c

y

0.25 [.010] 

C A B

e1

A

A1

8X b

C

0.10 [.004] 

4

3

1

2

FOOTPRINT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

NOT ES:
1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2.  CONT ROLLING DIMENSION: MILLIMET ER
3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

5   DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.

6   DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7   DIMENSION IS T HE LENGT H OF LEAD FOR SOLDERING TO
     A SUBST RAT E.

     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

8X 1.78 [.070]

DATE CODE (YWW)

XXXX

INTERNATIONAL

RECTIFIER

LOGO

F7101

Y =   LAS T DIGIT OF THE YEAR

PART  NUMBER

LOT CODE

WW =  WEEK

EXAMPLE: THIS IS  AN IRF7101 (MOSFET)

P =  DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

A =  ASSEMBLY SITE CODE

Note: For the most current drawing please refer to IR website at: 

http://www.irf.com/package/

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 330.00
(12.992)
  MAX.

14.40 ( .566 )
12.40 ( .488 )

NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 )

NOTES:
1.   CONTROLLING DIMENSION : MILLIMETER.

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3.   OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel 

(Dimensions are shown in millimeters (inches))

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit 

http://www.irf.com/whoto-call/

†     Qualification standards can be found at International Rectifier’s web site:

 

http://www.irf.com/product-info/reliability

††   

Applicable version of JEDEC standard at the time of product release

MS L1

(per JEDEC J-S TD-020D

†† 

)

RoHS compliant

Yes

Qualification information

Qualification level

Consumer

(per JEDEC JES D47F

††

 guidelines)

Moisture Sensitivity Level

SO-8

Note: For the most current drawing please refer to IR website at: 

http://www.irf.com/package/

Date

Comments

• Added ordering information on page 1.
• Updated datasheet with new IR corporate template.

Revision History 

10/29/2013

Maker
Infineon Technologies