IPB90R340C3
CoolMOS
™
Power Transistor
Features
• Lowest figure-of-merit R
ON
x Q
g
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
1)
for industrial applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
CoolMOS
™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• SMPS
• PC Silverbox
• Lighting
• Solar
V
DS
@ T
J
=25°C
900
V
R
DS(on),max
@T
J
=25°C
0.34
W
Q
g,typ
94
nC
Product Summary
Type
Package
Marking
IPB90R340C3
PG-TO263
9R340C
PG-TO263
Rev. 2.0
page 1
2012-04-16
Maximum ratings, at T
J
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
A
T
C
=100 °C
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
Avalanche energy, single pulse
E
AS
I
D
=3.1 A, V
DD
=50 V
678
mJ
Avalanche energy, repetitive t
AR
2),3)
E
AR
I
D
=3.1 A, V
DD
=50 V
Avalanche current, repetitive t
AR
2),3)
I
AR
A
MOSFET dv /dt ruggedness
dv /dt
V
DS
=0...400 V
V/ns
Gate source voltage
V
GS
static
V
AC (f>1 Hz)
Power dissipation
P
tot
T
C
=25 °C
W
Operating and storage temperature
T
J
, T
stg
°C
Value
15
9.5
34
±30
208
-55 ... 150
1
3.1
50
±20
Type
Package
Marking
IPB90R340C3
PG-TO263
9R340C
Rev. 2.0
page 1
2012-04-16
IPB90R340C3
Maximum ratings, at T
J
=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Unit
Continuous diode forward current
I
S
A
Diode pulse current
2)
I
S,pulse
34
Reverse diode dv /dt
4)
dv /dt
4
V/ns
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
0.6
K/W
R
thJA
SMD version, device
on PCB: at minimum
footprint
-
-
62
R
thJA
SMD version, device
on PCB: at 6 cm
²
cooling area
5)
-
35
-
Thermal resistance, junction -
ambient
Value
T
C
=25 °C
9.2
Values
Rev. 2.0
page 2
2012-04-16
cooling area
Soldering temperature, only reflow
soldering allowed; part not qualified
for direct wave soldering but bottom
side PCB wave soldering is allowed
T
sold
reflow MSL1
-
-
260
°C
Electrical characteristics, at T
J
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=250 µA
900
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=1 mA
2.5
3
3.5
Zero gate voltage drain current
I
DSS
V
DS
=900 V, V
GS
=0 V,
T
j
=25 °C
-
-
2
µA
V
DS
=900 V, V
GS
=0 V,
T
j
=150 °C
-
20
-
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
-
-
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=9.2 A,
T
j
=25 °C
-
0.28
0.34
W
V
GS
=10 V, I
D
=9.2 A,
T
j
=150 °C
-
0.76
-
Gate resistance
R
G
f =1 MHz, open drain
-
1.3
-
W
Rev. 2.0
page 2
2012-04-16
IPB90R340C3
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
2400
-
pF
Output capacitance
C
oss
-
120
-
Effective output capacitance, energy
related
6)
C
o(er)
-
71
-
Effective output capacitance, time
related
7)
C
o(tr)
-
280
-
Turn-on delay time
t
d(on)
-
70
-
ns
Rise time
t
r
-
20
-
Turn-off delay time
t
d(off)
-
400
-
Fall time
t
f
-
25
-
Gate Charge Characteristics
Gate to source charge
Q
gs
-
11
-
nC
Gate to drain charge
Q
gd
-
41
-
Gate charge total
Q
g
-
94
-
Values
V
GS
=0 V, V
DS
=100 V,
f =1 MHz
V
DD
=400 V,
V
GS
=10 V, I
D
=9.2A,
R
G
=23.1
W
V
DD
=400 V, I
D
=9.2 A,
V
GS
=0 to 10 V
V
GS
=0 V, V
DS
=0 V
to 500 V
Rev. 2.0
page 3
2012-04-16
Gate plateau voltage
V
plateau
-
4.6
-
V
Reverse Diode
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=9.2 A,
T
j
=25 °C
-
0.8
1.2
V
Reverse recovery time
t
rr
-
510
-
ns
Reverse recovery charge
Q
rr
-
11
-
µC
Peak reverse recovery current
I
rrm
-
41
-
A
7)
C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 50% V
DSS.
6)
C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 50% V
DSS
.
V
R
=400 V, I
F
=I
S
,
di
F
/dt =100 A/µs
3)
Repetitive avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
1)
J-STD20 and JESD22
2)
Pulse width t
p
limited by T
J,max
connection. PCB is vertical without blown air.
5)
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm
² (one layer, 70µm thick) copper area for drain
4)
I
SD
≤I
D
, di/dt≤200A/µs, V
DClink
=400V, V
peak
<V
(BR)DSS
, T
J
<T
J,max
, identical low side and high side switch
Rev. 2.0
page 3
2012-04-16
IPB90R340C3
1 Power dissipation
2 Safe operating area
P
tot
=f(T
C
)
I
D
=f(V
DS
); T
C
=25 °C; D =0
parameter: t
p
0
50
100
150
200
250
0
25
50
75
100
125
150
P
to
t
[W
]
T
C
[
°C]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10
-1
10
0
10
1
10
2
1
10
100
1000
I
D
[A
]
V
DS
[V]
limited by on-state
resistance
Rev. 2.0
page 4
2012-04-16
3 Max. transient thermal impedance
4 Typ. output characteristics
Z
thJC
=f(t
P
)
I
D
=f(V
DS
); T
J
=25 °C
parameter: D=t
p
/T
parameter: V
GS
0
50
100
150
200
250
0
25
50
75
100
125
150
P
to
t
[W
]
T
C
[
°C]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10
-1
10
0
10
1
10
2
1
10
100
1000
I
D
[A
]
V
DS
[V]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
-5
10
-4
10
-3
10
-2
10
-1
10
-2
10
-1
10
0
Z
th
J
C
[K
/W
]
t
p
[s]
4 V
4.5 V
5 V
5.5 V
6 V
8 V
10 V
0
10
20
30
40
50
0
5
10
15
20
25
I
D
[A
]
V
DS
[V]
limited by on-state
resistance
Rev. 2.0
page 4
2012-04-16
IPB90R340C3
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I
D
=f(V
DS
); T
J
=150 °C
R
DS(on)
=f(I
D
); T
J
=150 °C
parameter: V
GS
parameter: V
GS
4 V
4.5 V
5 V
6 V
8 V
10 V
20 V
0
5
10
15
20
25
0
5
10
15
20
25
I
D
[A
]
V
DS
[V]
4 V
4.5 V
4.8 V
5 V
10 V
0
1
2
3
4
5
0
5
10
15
20
25
30
R
D
S
(o
n
)
[W
]
I
D
[A]
Rev. 2.0
page 5
2012-04-16
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R
DS(on)
=f(T
j
); I
D
=9.2 A; V
GS
=10 V
I
D
=f(V
GS
); V
DS
=20V
parameter: T
J
typ
98 %
0
0.2
0.4
0.6
0.8
1
-60
-20
20
60
100
140
180
R
D
S
(o
n
)
[W
]
T
J
[
°C]
25 °C
150 °C
0
10
20
30
40
50
0
2
4
6
8
10
I
D
[A
]
V
GS
[V]
4 V
4.5 V
5 V
6 V
8 V
10 V
20 V
0
5
10
15
20
25
0
5
10
15
20
25
I
D
[A
]
V
DS
[V]
4 V
4.5 V
4.8 V
5 V
10 V
0
1
2
3
4
5
0
5
10
15
20
25
30
R
D
S
(o
n
)
[W
]
I
D
[A]
Rev. 2.0
page 5
2012-04-16
IPB90R340C3
9 Typ. gate charge
10 Forward characteristics of reverse diode
V
GS
=f(Q
gate
); I
D
=9.2 A pulsed
I
F
=f(V
SD
)
parameter: V
DD
parameter: T
J
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10
-1
10
0
10
1
10
2
0
0.5
1
1.5
2
I
F
[A
]
V
SD
[V]
400 V
720 V
0
2
4
6
8
10
0
20
40
60
80
100
V
G
S
[V
]
Q
gate
[nC]
Rev. 2.0
page 6
2012-04-16
11 Avalanche energy
12 Drain-source breakdown voltage
E
AS
=f(T
J
); I
D
=3.1A; V
DD
=50 V
V
BR(DSS)
=f(T
J
); I
D
=0.25 mA
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10
-1
10
0
10
1
10
2
0
0.5
1
1.5
2
I
F
[A
]
V
SD
[V]
400 V
720 V
0
2
4
6
8
10
0
20
40
60
80
100
V
G
S
[V
]
Q
gate
[nC]
800
850
900
950
1000
1050
-60
-20
20
60
100
140
180
V
B
R
(D
S
S
)
[V
]
T
J
[
°C]
0
100
200
300
400
500
600
700
25
50
75
100
125
150
E
A
S
[m
J
]
T
J
[
°C]
Rev. 2.0
page 6
2012-04-16
IPB90R340C3
13 Typ. capacitances
14 Typ. C
oss
stored energy
C =f(V
DS
); V
GS
=0 V; f =1 MHz
E
oss
= f(V
DS
)
0
2
4
6
8
10
12
0
100
200
300
400
500
600
E
o
s
s
[µ
J
]
V
DS
[V]
Ciss
Coss
Crss
10
0
10
1
10
2
10
3
10
4
0
100
200
300
400
500
600
C
[p
F
]
V
DS
[V]
Rev. 2.0
page 7
2012-04-16
0
2
4
6
8
10
12
0
100
200
300
400
500
600
E
o
s
s
[µ
J
]
V
DS
[V]
Ciss
Coss
Crss
10
0
10
1
10
2
10
3
10
4
0
100
200
300
400
500
600
C
[p
F
]
V
DS
[V]
Rev. 2.0
page 7
2012-04-16
IPB90R340C3
Definition of diode switching characteristics
Rev. 2.0
page 8
2012-04-16
Rev. 2.0
page 8
2012-04-16
IPB90R340C3
PG-TO263 Outlines
Rev. 2.0
page 9
2012-04-16
Rev. 2.0
page 9
2012-04-16
IPB90R340C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
Rev. 2.0
page 10
2012-04-16
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 10
2012-04-16