INFINEON-IKW15N120H3-DS-V02_01-EN Datasheet

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IGBT

HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery

anti-paralleldiode

IKW15N120H3

1200Vhighspeedswitchingseriesthirdgeneration

Datasheet

IndustrialPowerControl

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2

IKW15N120H3

Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-12-01

HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast

recoveryanti-paralleldiode

Features:

TRENCHSTOP

TM

technologyoffering

•verylowV

CEsat

•lowEMI

•Verysoft,fastrecoveryanti-paralleldiode

•maximumjunctiontemperature175°C

•qualifiedaccordingtoJEDECfortargetapplications

•Pb-freeleadplating;RoHScompliant

•completeproductspectrumandPSpiceModels:

http://www.infineon.com/igbt/

Applications:

•uninterruptiblepowersupplies

•weldingconverters

•converterswithhighswitchingfrequency

G

C

E

G

C

E

KeyPerformanceandPackageParameters

Type

V

CE

I

C

V

CEsat

,T

vj

=25°C

T

vjmax

Marking

Package

IKW15N120H3

1200V

15A

2.05V

175°C

K15H1203

PG-TO247-3

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3

IKW15N120H3

Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-12-01

TableofContents

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

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4

IKW15N120H3

Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-12-01

MaximumRatings

Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter

Symbol

Value

Unit

Collector-emitter voltage

V

CE

1200

V

DCcollectorcurrent,limitedbyT

vjmax

T

C

=25°C

T

C

=100°C

I

C

30.0
15.0

A

Pulsedcollectorcurrent,t

p

limitedbyT

vjmax

I

Cpuls

60.0

A

TurnoffsafeoperatingareaV

CE

1200V,T

vj

175°C

-

60.0

A

Diodeforwardcurrent,limitedbyT

vjmax

T

C

=25°C

T

C

=100°C

I

F

15.0

7.5

A

Diodepulsedcurrent,t

p

limitedbyT

vjmax

I

Fpuls

60.0

A

Gate-emitter voltage

V

GE

±20

V

Short circuit withstand time

V

GE

=15.0V,V

CC

600V

Allowed number of short circuits < 1000
Time between short circuits: 

 1.0s

T

vj

=175°C

t

SC

10

µs

PowerdissipationT

C

=25°C

PowerdissipationT

C

=100°C

P

tot

217.0
105.0

W

Operating junction temperature

T

vj

-40...+175

°C

Storage temperature

T

stg

-55...+150

°C

Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s

260

°C

Mounting torque, M3 screw
Maximum of mounting processes: 3

M

0.6

Nm

ThermalResistance

Parameter

Symbol Conditions

Max.Value

Unit

Characteristic

IGBT thermal resistance,
junction - case

R

th(j-c)

0.70

K/W

Diode thermal resistance,
junction - case

R

th(j-c)

2.12

K/W

Thermal resistance
junction - ambient

R

th(j-a)

40

K/W

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5

IKW15N120H3

Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-12-01

ElectricalCharacteristic,atT

vj

=25°C,unlessotherwisespecified

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

StaticCharacteristic

Collector-emitter breakdown voltage

V

(BR)CES

V

GE

=0V,I

C

=0.50mA

1200

-

-

V

Collector-emitter saturation voltage

V

CEsat

V

GE

=15.0V,I

C

=15.0A

T

vj

=25°C

T

vj

=125°C

T

vj

=175°C

-
-
-

2.05
2.50
2.70

2.40

-
-

V

Diode forward voltage

V

F

V

GE

=0V,I

F

=7.5A

T

vj

=25°C

T

vj

=175°C

-
-

1.80
1.85

2.35

-

V

Diode forward voltage

V

F

V

GE

=0V,I

F

=15.0A

T

vj

=25°C

T

vj

=125°C

T

vj

=175°C

-
-
-

2.40
2.60
2.60

3.05

-
-

V

Gate-emitter threshold voltage

V

GE(th)

I

C

=0.50mA,V

CE

=V

GE

5.0

5.8

6.5

V

Zero gate voltage collector current

I

CES

V

CE

=1200V,V

GE

=0V

T

vj

=25°C

T

vj

=175°C

-
-

-
-

250.0

2500.0

µA

Gate-emitter leakage current

I

GES

V

CE

=0V,V

GE

=20V

-

-

600

nA

Transconductance

g

fs

V

CE

=20V,I

C

=15.0A

-

7.5

-

S

ElectricalCharacteristic,atT

vj

=25°C,unlessotherwisespecified

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

DynamicCharacteristic

Input capacitance

C

ies

-

875

-

Output capacitance

C

oes

-

75

-

Reverse transfer capacitance

C

res

-

45

-

V

CE

=25V,V

GE

=0V,f=1MHz

pF

Gate charge

Q

G

V

CC

=960V,I

C

=15.0A,

V

GE

=15V

-

75.0

-

nC

Internal emitter inductance
measured 5mm (0.197 in.) from
case

L

E

-

13.0

-

nH

Short circuit collector current
Max. 1000 short circuits
Time between short circuits: 

 1.0s

I

C(SC)

V

GE

=15.0V,V

CC

600V,

t

SC

10µs

T

vj

=175°C

-

52

-

A

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6

IKW15N120H3

Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-12-01

SwitchingCharacteristic,InductiveLoad

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

IGBTCharacteristic,atT

vj

=25°C

Turn-on delay time

t

d(on)

-

21

-

ns

Rise time

t

r

-

34

-

ns

Turn-off delay time

t

d(off)

-

260

-

ns

Fall time

t

f

-

14

-

ns

Turn-on energy

E

on

-

1.10

-

mJ

Turn-off energy

E

off

-

0.45

-

mJ

Total switching energy

E

ts

-

1.55

-

mJ

T

vj

=25°C,

V

CC

=600V,I

C

=15.0A,

V

GE

=0.0/15.0V,

R

G(on)

=35.0

,R

G(off)

=35.0

,

L

σ

=95nH,C

σ

=67pF

L

σ

,C

σ

fromFig.E

Energy losses include “tail” and
diode reverse recovery.

DiodeCharacteristic,atT

vj

=25°C

Diode reverse recovery time

t

rr

-

260

-

ns

Diode reverse recovery charge

Q

rr

-

0.80

-

µC

Diode peak reverse recovery current

I

rrm

-

7.7

-

A

Diode peak rate of fall of reverse

recoverycurrentduringt

b

di

rr

/dt

-

-110

-

A/µs

T

vj

=25°C,

V

R

=600V,

I

F

=15.0A,

di

F

/dt=500A/µs

SwitchingCharacteristic,InductiveLoad

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

IGBTCharacteristic,atT

vj

=175°C

Turn-on delay time

t

d(on)

-

19

-

ns

Rise time

t

r

-

30

-

ns

Turn-off delay time

t

d(off)

-

327

-

ns

Fall time

t

f

-

43

-

ns

Turn-on energy

E

on

-

1.60

-

mJ

Turn-off energy

E

off

-

0.90

-

mJ

Total switching energy

E

ts

-

2.50

-

mJ

T

vj

=175°C,

V

CC

=600V,I

C

=15.0A,

V

GE

=0.0/15.0V,

R

G(on)

=35.0

,R

G(off)

=35.0

,

L

σ

=95nH,C

σ

=67pF

L

σ

,C

σ

fromFig.E

Energy losses include “tail” and
diode reverse recovery.

DiodeCharacteristic,atT

vj

=175°C

Diode reverse recovery time

t

rr

-

470

-

ns

Diode reverse recovery charge

Q

rr

-

1.70

-

µC

Diode peak reverse recovery current

I

rrm

-

9.8

-

A

Diode peak rate of fall of reverse

recoverycurrentduringt

b

di

rr

/dt

-

-80

-

A/µs

T

vj

=175°C,

V

R

=600V,

I

F

=15.0A,

di

F

/dt=500A/µs

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7

IKW15N120H3

Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-12-01

Figure 1.

Collectorcurrentasafunctionofswitching

frequency

(T

j

175°C,D=0.5,V

CE

=600V,V

GE

=15/0V,

r

G

=35

)

f,SWITCHINGFREQUENCY[kHz]

I

C

,COLLECTORCURRENT[A]

1

10

100

1000

0

10

20

30

40

50

60

70

T

C

=80°

T

C

=110°

T

C

=80°

T

C

=110°

Figure 2.

Forwardbiassafeoperatingarea

(D=0,T

C

=25°C,T

j

175°C;V

GE

=15V)

V

CE

,COLLECTOR-EMITTERVOLTAGE[V]

I

C

,COLLECTORCURRENT[A]

1

10

100

1000

0.1

1

10

100

t

p

=1µs

10µs

50µs

100µs

200µs

500µs

DC

Figure 3.

Powerdissipationasafunctionofcase

temperature

(T

j

175°C)

T

C

,CASETEMPERATURE[°C]

P

tot

,POWERDISSIPATION[W]

25

50

75

100

125

150

175

0

50

100

150

200

250

Figure 4.

Collectorcurrentasafunctionofcase

temperature

(V

GE

15V,T

j

175°C)

T

C

,CASETEMPERATURE[°C]

I

C

,COLLECTORCURRENT[A]

25

50

75

100

125

150

175

0

10

20

30

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8

IKW15N120H3

Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-12-01

Figure 5.

Typicaloutputcharacteristic

(T

j

=25°C)

V

CE

,COLLECTOR-EMITTERVOLTAGE[V]

I

C

,COLLECTORCURRENT[A]

0

2

4

6

0

15

30

45

60

V

GE

=20V

17V

15V

13V

11V

9V

7V

5V

Figure 6.

Typicaloutputcharacteristic

(T

j

=175°C)

V

CE

,COLLECTOR-EMITTERVOLTAGE[V]

I

C

,COLLECTORCURRENT[A]

0

2

4

6

8

0

15

30

45

60

V

GE

=20V

17V

15V

13V

11V

9V

7V

5V

Figure 7.

Typicaltransfercharacteristic

(V

CE

=20V)

V

GE

,GATE-EMITTERVOLTAGE[V]

I

C

,COLLECTORCURRENT[A]

5

10

15

0

15

30

45

60

T

j

=25°C

T

j

=175°C

Figure 8.

Typicalcollector-emittersaturationvoltageas

afunctionofjunctiontemperature

(V

GE

=15V)

T

j

,JUNCTIONTEMPERATURE[°C]

V

CE(sat)

,COLLECTOR-EMITTERSATURATION[V]

0

25

50

75

100

125

150

175

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

I

C

=7.5A

I

C

=15A

I

C

=30A

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9

IKW15N120H3

Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-12-01

Figure 9.

Typicalswitchingtimesasafunctionof

collectorcurrent

(ind.load,T

j

=175°C,V

CE

=600V,V

GE

=15/0V,

r

G

=35

,testcircuitinFig.E)

I

C

,COLLECTORCURRENT[A]

t,SWITCHINGTIMES[ns]

0

5

10

15

20

25

30

10

100

1000

t

d(off)

t

f

t

d(on)

t

r

Figure 10.

Typicalswitchingtimesasafunctionofgate

resistor

(ind.load,T

j

=175°C,V

CE

=600V,V

GE

=15/0V,

I

C

=15A,testcircuitinFig.E)

r

G

,GATERESISTOR[

]

t,SWITCHINGTIMES[ns]

10

30

50

70

90

110

10

100

1000

t

d(off)

t

f

t

d(on)

t

r

Figure 11.

Typicalswitchingtimesasafunctionof

junctiontemperature

(ind.load,V

CE

=600V,V

GE

=15/0V,I

C

=15A,

r

G

=35

,testcircuitinFig.E)

T

j

,JUNCTIONTEMPERATURE[°C]

t,SWITCHINGTIMES[ns]

25

50

75

100

125

150

175

10

100

1000

t

d(off)

t

f

t

d(on)

t

r

Figure 12.

Gate-emitterthresholdvoltageasafunction

ofjunctiontemperature

(I

C

=0.5mA)

T

j

,JUNCTIONTEMPERATURE[°C]

V

GE(th)

,GATE-EMITTERTHRESHOLDVOLTAGE[V]

0

25

50

75

100

125

150

175

2

3

4

5

6

7

typ.
min.
max.

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10

IKW15N120H3

Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-12-01

Figure 13.

Typicalswitchingenergylossesasa

functionofcollectorcurrent

(ind.load,T

j

=175°C,V

CE

=600V,V

GE

=15/0V,

r

G

=35

,testcircuitinFig.E)

I

C

,COLLECTORCURRENT[A]

E

,SWITCHINGENERGYLOSSES[mJ]

0

5

10

15

20

25

30

0

1

2

3

4

5

6

7

E

off

E

on

E

ts

Figure 14.

Typicalswitchingenergylossesasa

functionofgateresistor

(ind.load,T

j

=175°C,V

CE

=600V,V

GE

=15/0V,

I

C

=15A,testcircuitinFig.E)

r

G

,GATERESISTOR[

]

E

,SWITCHINGENERGYLOSSES[mJ]

10

30

50

70

90

110

0

1

2

3

4

5

E

off

E

on

E

ts

Figure 15.

Typicalswitchingenergylossesasa

functionofjunctiontemperature

(indload,V

CE

=600V,V

GE

=15/0V,I

C

=15A,

r

G

=35

,testcircuitinFig.E)

T

j

,JUNCTIONTEMPERATURE[°C]

E

,SWITCHINGENERGYLOSSES[mJ]

25

50

75

100

125

150

175

0.0

0.5

1.0

1.5

2.0

2.5

E

off

E

on

E

ts

Figure 16.

Typicalswitchingenergylossesasa

functionofcollectoremittervoltage

(ind.load,T

j

=175°C,V

GE

=15/0V,I

C

=15A,

r

G

=35

,testcircuitinFig.E)

V

CE

,COLLECTOR-EMITTERVOLTAGE[V]

E

,SWITCHINGENERGYLOSSES[mJ]

400

500

600

700

800

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

E

off

E

on

E

ts

Maker
Infineon Technologies
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