IGBT
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery
anti-paralleldiode
IKW15N120H3
1200Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
2
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast
recoveryanti-paralleldiode
Features:
TRENCHSTOP
TM
technologyoffering
•verylowV
CEsat
•lowEMI
•Verysoft,fastrecoveryanti-paralleldiode
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
G
C
E
G
C
E
KeyPerformanceandPackageParameters
Type
V
CE
I
C
V
CEsat
,T
vj
=25°C
T
vjmax
Marking
Package
IKW15N120H3
1200V
15A
2.05V
175°C
K15H1203
PG-TO247-3
3
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
4
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CE
1200
V
DCcollectorcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
I
C
30.0
15.0
A
Pulsedcollectorcurrent,t
p
limitedbyT
vjmax
I
Cpuls
60.0
A
TurnoffsafeoperatingareaV
CE
≤
1200V,T
vj
≤
175°C
-
60.0
A
Diodeforwardcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
I
F
15.0
7.5
A
Diodepulsedcurrent,t
p
limitedbyT
vjmax
I
Fpuls
60.0
A
Gate-emitter voltage
V
GE
±20
V
Short circuit withstand time
V
GE
=15.0V,V
CC
≤
600V
Allowed number of short circuits < 1000
Time between short circuits:
≥
1.0s
T
vj
=175°C
t
SC
10
µs
PowerdissipationT
C
=25°C
PowerdissipationT
C
=100°C
P
tot
217.0
105.0
W
Operating junction temperature
T
vj
-40...+175
°C
Storage temperature
T
stg
-55...+150
°C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
260
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Symbol Conditions
Max.Value
Unit
Characteristic
IGBT thermal resistance,
junction - case
R
th(j-c)
0.70
K/W
Diode thermal resistance,
junction - case
R
th(j-c)
2.12
K/W
Thermal resistance
junction - ambient
R
th(j-a)
40
K/W
5
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
StaticCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V,I
C
=0.50mA
1200
-
-
V
Collector-emitter saturation voltage
V
CEsat
V
GE
=15.0V,I
C
=15.0A
T
vj
=25°C
T
vj
=125°C
T
vj
=175°C
-
-
-
2.05
2.50
2.70
2.40
-
-
V
Diode forward voltage
V
F
V
GE
=0V,I
F
=7.5A
T
vj
=25°C
T
vj
=175°C
-
-
1.80
1.85
2.35
-
V
Diode forward voltage
V
F
V
GE
=0V,I
F
=15.0A
T
vj
=25°C
T
vj
=125°C
T
vj
=175°C
-
-
-
2.40
2.60
2.60
3.05
-
-
V
Gate-emitter threshold voltage
V
GE(th)
I
C
=0.50mA,V
CE
=V
GE
5.0
5.8
6.5
V
Zero gate voltage collector current
I
CES
V
CE
=1200V,V
GE
=0V
T
vj
=25°C
T
vj
=175°C
-
-
-
-
250.0
2500.0
µA
Gate-emitter leakage current
I
GES
V
CE
=0V,V
GE
=20V
-
-
600
nA
Transconductance
g
fs
V
CE
=20V,I
C
=15.0A
-
7.5
-
S
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
DynamicCharacteristic
Input capacitance
C
ies
-
875
-
Output capacitance
C
oes
-
75
-
Reverse transfer capacitance
C
res
-
45
-
V
CE
=25V,V
GE
=0V,f=1MHz
pF
Gate charge
Q
G
V
CC
=960V,I
C
=15.0A,
V
GE
=15V
-
75.0
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
L
E
-
13.0
-
nH
Short circuit collector current
Max. 1000 short circuits
Time between short circuits:
≥
1.0s
I
C(SC)
V
GE
=15.0V,V
CC
≤
600V,
t
SC
≤
10µs
T
vj
=175°C
-
52
-
A
6
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
SwitchingCharacteristic,InductiveLoad
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
IGBTCharacteristic,atT
vj
=25°C
Turn-on delay time
t
d(on)
-
21
-
ns
Rise time
t
r
-
34
-
ns
Turn-off delay time
t
d(off)
-
260
-
ns
Fall time
t
f
-
14
-
ns
Turn-on energy
E
on
-
1.10
-
mJ
Turn-off energy
E
off
-
0.45
-
mJ
Total switching energy
E
ts
-
1.55
-
mJ
T
vj
=25°C,
V
CC
=600V,I
C
=15.0A,
V
GE
=0.0/15.0V,
R
G(on)
=35.0
Ω
,R
G(off)
=35.0
Ω
,
L
σ
=95nH,C
σ
=67pF
L
σ
,C
σ
fromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atT
vj
=25°C
Diode reverse recovery time
t
rr
-
260
-
ns
Diode reverse recovery charge
Q
rr
-
0.80
-
µC
Diode peak reverse recovery current
I
rrm
-
7.7
-
A
Diode peak rate of fall of reverse
recoverycurrentduringt
b
di
rr
/dt
-
-110
-
A/µs
T
vj
=25°C,
V
R
=600V,
I
F
=15.0A,
di
F
/dt=500A/µs
SwitchingCharacteristic,InductiveLoad
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
IGBTCharacteristic,atT
vj
=175°C
Turn-on delay time
t
d(on)
-
19
-
ns
Rise time
t
r
-
30
-
ns
Turn-off delay time
t
d(off)
-
327
-
ns
Fall time
t
f
-
43
-
ns
Turn-on energy
E
on
-
1.60
-
mJ
Turn-off energy
E
off
-
0.90
-
mJ
Total switching energy
E
ts
-
2.50
-
mJ
T
vj
=175°C,
V
CC
=600V,I
C
=15.0A,
V
GE
=0.0/15.0V,
R
G(on)
=35.0
Ω
,R
G(off)
=35.0
Ω
,
L
σ
=95nH,C
σ
=67pF
L
σ
,C
σ
fromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atT
vj
=175°C
Diode reverse recovery time
t
rr
-
470
-
ns
Diode reverse recovery charge
Q
rr
-
1.70
-
µC
Diode peak reverse recovery current
I
rrm
-
9.8
-
A
Diode peak rate of fall of reverse
recoverycurrentduringt
b
di
rr
/dt
-
-80
-
A/µs
T
vj
=175°C,
V
R
=600V,
I
F
=15.0A,
di
F
/dt=500A/µs
7
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
Figure 1.
Collectorcurrentasafunctionofswitching
frequency
(T
j
≤
175°C,D=0.5,V
CE
=600V,V
GE
=15/0V,
r
G
=35
Ω
)
f,SWITCHINGFREQUENCY[kHz]
I
C
,COLLECTORCURRENT[A]
1
10
100
1000
0
10
20
30
40
50
60
70
T
C
=80°
T
C
=110°
T
C
=80°
T
C
=110°
Figure 2.
Forwardbiassafeoperatingarea
(D=0,T
C
=25°C,T
j
≤
175°C;V
GE
=15V)
V
CE
,COLLECTOR-EMITTERVOLTAGE[V]
I
C
,COLLECTORCURRENT[A]
1
10
100
1000
0.1
1
10
100
t
p
=1µs
10µs
50µs
100µs
200µs
500µs
DC
Figure 3.
Powerdissipationasafunctionofcase
temperature
(T
j
≤
175°C)
T
C
,CASETEMPERATURE[°C]
P
tot
,POWERDISSIPATION[W]
25
50
75
100
125
150
175
0
50
100
150
200
250
Figure 4.
Collectorcurrentasafunctionofcase
temperature
(V
GE
≥
15V,T
j
≤
175°C)
T
C
,CASETEMPERATURE[°C]
I
C
,COLLECTORCURRENT[A]
25
50
75
100
125
150
175
0
10
20
30
8
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
Figure 5.
Typicaloutputcharacteristic
(T
j
=25°C)
V
CE
,COLLECTOR-EMITTERVOLTAGE[V]
I
C
,COLLECTORCURRENT[A]
0
2
4
6
0
15
30
45
60
V
GE
=20V
17V
15V
13V
11V
9V
7V
5V
Figure 6.
Typicaloutputcharacteristic
(T
j
=175°C)
V
CE
,COLLECTOR-EMITTERVOLTAGE[V]
I
C
,COLLECTORCURRENT[A]
0
2
4
6
8
0
15
30
45
60
V
GE
=20V
17V
15V
13V
11V
9V
7V
5V
Figure 7.
Typicaltransfercharacteristic
(V
CE
=20V)
V
GE
,GATE-EMITTERVOLTAGE[V]
I
C
,COLLECTORCURRENT[A]
5
10
15
0
15
30
45
60
T
j
=25°C
T
j
=175°C
Figure 8.
Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(V
GE
=15V)
T
j
,JUNCTIONTEMPERATURE[°C]
V
CE(sat)
,COLLECTOR-EMITTERSATURATION[V]
0
25
50
75
100
125
150
175
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
I
C
=7.5A
I
C
=15A
I
C
=30A
9
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
Figure 9.
Typicalswitchingtimesasafunctionof
collectorcurrent
(ind.load,T
j
=175°C,V
CE
=600V,V
GE
=15/0V,
r
G
=35
Ω
,testcircuitinFig.E)
I
C
,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
0
5
10
15
20
25
30
10
100
1000
t
d(off)
t
f
t
d(on)
t
r
Figure 10.
Typicalswitchingtimesasafunctionofgate
resistor
(ind.load,T
j
=175°C,V
CE
=600V,V
GE
=15/0V,
I
C
=15A,testcircuitinFig.E)
r
G
,GATERESISTOR[
Ω
]
t,SWITCHINGTIMES[ns]
10
30
50
70
90
110
10
100
1000
t
d(off)
t
f
t
d(on)
t
r
Figure 11.
Typicalswitchingtimesasafunctionof
junctiontemperature
(ind.load,V
CE
=600V,V
GE
=15/0V,I
C
=15A,
r
G
=35
Ω
,testcircuitinFig.E)
T
j
,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25
50
75
100
125
150
175
10
100
1000
t
d(off)
t
f
t
d(on)
t
r
Figure 12.
Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(I
C
=0.5mA)
T
j
,JUNCTIONTEMPERATURE[°C]
V
GE(th)
,GATE-EMITTERTHRESHOLDVOLTAGE[V]
0
25
50
75
100
125
150
175
2
3
4
5
6
7
typ.
min.
max.
10
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
Figure 13.
Typicalswitchingenergylossesasa
functionofcollectorcurrent
(ind.load,T
j
=175°C,V
CE
=600V,V
GE
=15/0V,
r
G
=35
Ω
,testcircuitinFig.E)
I
C
,COLLECTORCURRENT[A]
E
,SWITCHINGENERGYLOSSES[mJ]
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
E
off
E
on
E
ts
Figure 14.
Typicalswitchingenergylossesasa
functionofgateresistor
(ind.load,T
j
=175°C,V
CE
=600V,V
GE
=15/0V,
I
C
=15A,testcircuitinFig.E)
r
G
,GATERESISTOR[
Ω
]
E
,SWITCHINGENERGYLOSSES[mJ]
10
30
50
70
90
110
0
1
2
3
4
5
E
off
E
on
E
ts
Figure 15.
Typicalswitchingenergylossesasa
functionofjunctiontemperature
(indload,V
CE
=600V,V
GE
=15/0V,I
C
=15A,
r
G
=35
Ω
,testcircuitinFig.E)
T
j
,JUNCTIONTEMPERATURE[°C]
E
,SWITCHINGENERGYLOSSES[mJ]
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
E
off
E
on
E
ts
Figure 16.
Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(ind.load,T
j
=175°C,V
GE
=15/0V,I
C
=15A,
r
G
=35
Ω
,testcircuitinFig.E)
V
CE
,COLLECTOR-EMITTERVOLTAGE[V]
E
,SWITCHINGENERGYLOSSES[mJ]
400
500
600
700
800
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
E
off
E
on
E
ts