INFINEON-IGW100N60H3-DS-V01_02-EN Datasheet

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IGBT

HighspeedIGBTinTrenchandFieldstoptechnology

IGW100N60H3

600Vhighspeedswitchingseriesthirdgeneration

Datasheet

IndustrialPowerControl

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2

IGW100N60H3

Highspeedswitchingseriesthirdgeneration

Rev.1.2,2013-02-07

HighspeedIGBTinTrenchandFieldstoptechnology

Features:

TRENCHSTOP

TM

technologyoffering

•verylowturn-offenergy

•lowV

CEsat

•lowEMI

•maximumjunctiontemperature175°C

•qualifiedaccordingtoJEDECfortargetapplications

•Pb-freeleadplating,halogen-freemouldcompound,RoHS

compliant

•completeproductspectrumandPSpiceModels:

http://www.infineon.com/igbt/

Applications:

•uninterruptiblepowersupplies

•weldingconverters

•converterswithhighswitchingfrequency

Packagepindefinition:

•Pin1-gate

•Pin2&backside-collector

•Pin3-emitter

G

C

E

1

2

3

KeyPerformanceandPackageParameters

Type

V

CE

I

C

V

CEsat

,T

vj

=25°C

T

vjmax

Marking

Package

IGW100N60H3

600V

100A

1.85V

175°C

G100H603

PG-TO247-pin123

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3

IGW100N60H3

Highspeedswitchingseriesthirdgeneration

Rev.1.2,2013-02-07

TableofContents

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

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4

IGW100N60H3

Highspeedswitchingseriesthirdgeneration

Rev.1.2,2013-02-07

Maximumratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

V

CE

600

V

DCcollectorcurrent,limitedbyT

vjmax

1)

T

C

=25°Cvaluelimitedbybondwire

T

C

=100°C

I

C

140.0
120.0

A

Pulsedcollectorcurrent,t

p

limitedbyT

vjmax

2)

I

Cpuls

300.0

A

TurnoffsafeoperatingareaV

CE

600V,T

vj

175°C

3)

-

300.0

A

Gate-emitter voltage

V

GE

±20

V

Short circuit withstand time

V

GE

=15.0V,V

CC

400V

Allowed number of short circuits < 1000
Time between short circuits: 

 1.0s

T

vj

=150°C

t

SC

5

µs

PowerdissipationT

C

=25°C

P

tot

714.0

W

Operating junction temperature

T

vj

-40...+175

°C

Storage temperature

T

stg

-55...+150

°C

Soldering temperature,
wave soldering  1.6 mm (0.063 in.) from case for 10s

260

°C

Mounting torque, M3 screw
Maximum of mounting processes: 3

M

0.6

Nm

ThermalResistance

Parameter

Symbol Conditions

Max.Value

Unit

Characteristic

IGBT thermal resistance,

4)

 

junction - case

R

th(j-c)

0.21

K/W

Thermal resistance
junction - ambient

R

th(j-a)

40

K/W

ElectricalCharacteristic,atT

vj

=25°C,unlessotherwisespecified

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

StaticCharacteristic

Collector-emitter breakdown voltage

V

(BR)CES

V

GE

=0V,I

C

=2.00mA

600

-

-

V

Collector-emitter saturation voltage

V

CEsat

V

GE

=15.0V,I

C

=100.0A

T

vj

=25°C

T

vj

=125°C

T

vj

=175°C

-
-
-

1.85
2.10
2.25

2.30

-
-

V

Gate-emitter threshold voltage

V

GE(th)

I

C

=1.60mA,V

CE

=V

GE

4.1

5.1

5.7

V

Zero gate voltage collector current

I

CES

V

CE

=600V,V

GE

=0V

T

vj

=25°C

T

vj

=175°C

-
-

-
-

40.0

6700.0

µA

Gate-emitter leakage current

I

GES

V

CE

=0V,V

GE

=20V

-

-

100

nA

Transconductance

g

fs

V

CE

=20V,I

C

=100.0A

-

50.0

-

S

1)

 For maximal distance of 5mm between soldering point and mould

2)

 Additionally t

p

<10ms due to bondwire

3)

 Additionally t

p

<10ms due to bondwire

4)

 Thermal resistance of grease R

th(c-s)

 (case to heat sink) more than 0.1 K/W not included.

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5

IGW100N60H3

Highspeedswitchingseriesthirdgeneration

Rev.1.2,2013-02-07

ElectricalCharacteristic,atT

vj

=25°C,unlessotherwisespecified

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

DynamicCharacteristic

Input capacitance

C

ies

-

6100

-

Output capacitance

C

oes

-

210

-

Reverse transfer capacitance

C

res

-

180

-

V

CE

=25V,V

GE

=0V,f=1MHz

pF

Gate charge

Q

G

V

CC

=480V,I

C

=100.0A,

V

GE

=15V

-

625.0

-

nC

Short circuit collector current
Max. 1000 short circuits
Time between short circuits: 

 1.0s

I

C(SC)

V

GE

=15.0V,V

CC

400V,

t

SC

5µs

T

vj

=150°C

-

890

-

A

SwitchingCharacteristic,InductiveLoad

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

IGBTCharacteristic,atT

vj

=25°C

Turn-on delay time

t

d(on)

-

30

-

ns

Rise time

t

r

-

47

-

ns

Turn-off delay time

t

d(off)

-

265

-

ns

Fall time

t

f

-

30

-

ns

Turn-on energy

E

on

-

3.70

-

mJ

Turn-off energy

E

off

-

1.90

-

mJ

Total switching energy

E

ts

-

5.60

-

mJ

T

vj

=25°C,

V

CC

=400V,I

C

=100.0A,

V

GE

=0.0/15.0V,

r

G

=3.5

,L

σ

=25nH,

C

σ

=50pF

L

σ

,C

σ

fromFig.E

Energy losses include “tail” and
diode (IDW50E60) reverse
recovery.

SwitchingCharacteristic,InductiveLoad

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

IGBTCharacteristic,atT

vj

=175°C

Turn-on delay time

t

d(on)

-

28

-

ns

Rise time

t

r

-

44

-

ns

Turn-off delay time

t

d(off)

-

310

-

ns

Fall time

t

f

-

23

-

ns

Turn-on energy

E

on

-

4.70

-

mJ

Turn-off energy

E

off

-

2.30

-

mJ

Total switching energy

E

ts

-

7.00

-

mJ

T

vj

=175°C,

V

CC

=400V,I

C

=100.0A,

V

GE

=0.0/15.0V,

r

G

=3.5

,L

σ

=25nH,

C

σ

=50pF

L

σ

,C

σ

fromFig.E

Energy losses include “tail” and
diode (IDW50E60) reverse
recovery.

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6

IGW100N60H3

Highspeedswitchingseriesthirdgeneration

Rev.1.2,2013-02-07

Figure 1.

Collectorcurrentasafunctionofswitching

frequency

(T

vj

175°C,D=0.5,V

CE

=400V,V

GE

=15/0V,

r

G

=3.5

,R

th(j

-

c)

=0.21K/W)

f,SWITCHINGFREQUENCY[kHz]

I

C

,COLLECTORCURRENT[A]

10

100

0

20

40

60

80

100

120

140

160

T

C

=80°

T

C

=110°

Figure 2.

Forwardbiassafeoperatingarea

(D=0,T

C

=25°C,T

vj

175°C;V

GE

=15V,

R

th(j

-

c)

=0.21K/W)

V

CE

,COLLECTOR-EMITTERVOLTAGE[V]

I

C

,COLLECTORCURRENT[A]

1

10

100

0.1

1

10

100

t

p

=1µs

10µs

50µs

100µs

200µs

500µs

DC

Figure 3.

Powerdissipationasafunctionofcase

temperature

(T

vj

175°C,R

th(j

-

c)

=0.21K/W)

T

C

,CASETEMPERATURE[°C]

P

tot

,POWERDISSIPATION[W]

25

50

75

100

125

150

175

0

143

286

429

572

715

Figure 4.

Collectorcurrentasafunctionofcase

temperature

(V

GE

15V,T

vj

175°C,R

th(j

-

c)

=0.21K/W)

T

C

,CASETEMPERATURE[°C]

I

C

,COLLECTORCURRENT[A]

25

50

75

100

125

150

175

0

20

40

60

80

100

120

140

160

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7

IGW100N60H3

Highspeedswitchingseriesthirdgeneration

Rev.1.2,2013-02-07

Figure 5.

Typicaloutputcharacteristic

(T

vj

=25°C)

V

CE

,COLLECTOR-EMITTERVOLTAGE[V]

I

C

,COLLECTORCURRENT[A]

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

50

100

150

200

250

300

V

GE

=20V

17V

15V

13V

11V

9V

7V

Figure 6.

Typicaloutputcharacteristic

(T

vj

=175°C)

V

CE

,COLLECTOR-EMITTERVOLTAGE[V]

I

C

,COLLECTORCURRENT[A]

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.0

50.0

100.0

150.0

200.0

250.0

300.0

V

GE

=20V

17V

15V

13V

11V

9V

7V

Figure 7.

Typicaltransfercharacteristic

(V

CE

=20V)

V

GE

,GATE-EMITTERVOLTAGE[V]

I

C

,COLLECTORCURRENT[A]

0

2

4

6

8

10

12

0

50

100

150

200

250

T

j

=25°C

T

j

=175°C

Figure 8.

Typicalcollector-emittersaturationvoltageas

afunctionofjunctiontemperature

(V

GE

=15V)

T

vj

,JUNCTIONTEMPERATURE[°C]

V

CEsat

,COLLECTOR-EMITTERSATURATION[V]

0

25

50

75

100

125

150

175

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

I

C

=30A

I

C

=60A

I

C

=120A

I

C

=240A

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8

IGW100N60H3

Highspeedswitchingseriesthirdgeneration

Rev.1.2,2013-02-07

Figure 9.

Typicalswitchingtimesasafunctionof

collectorcurrent

(inductiveload,T

vj

=175°C,V

CE

=400V,

V

GE

=15/0V,r

G

=3.5

,Dynamictestcircuitin

Figure E)

I

C

,COLLECTORCURRENT[A]

t,SWITCHINGTIMES[ns]

0

20

40

60

80 100 120 140 160 180 200

1

10

100

1000

t

d(off)

t

f

t

d(on)

t

r

Figure 10.

Typicalswitchingtimesasafunctionofgate

resistor

(inductiveload,T

vj

=175°C,V

CE

=400V,

V

GE

=15/0V,I

C

=100A,Dynamictestcircuitin

Figure E)

r

G

,GATERESISTOR[

]

t,SWITCHINGTIMES[ns]

0

5

10

15

20

25

1

10

100

1000

1E+4

t

d(off)

t

f

t

d(on)

t

r

Figure 11.

Typicalswitchingtimesasafunctionof

junctiontemperature

(inductiveload,V

CE

=400V,V

GE

=15/0V,

I

C

=100A,r

G

=3.5

,Dynamictestcircuitin

Figure E)

T

vj

,JUNCTIONTEMPERATURE[°C]

t,SWITCHINGTIMES[ns]

25

50

75

100

125

150

175

1

10

100

1000

t

d(off)

t

f

t

d(on)

t

r

Figure 12.

Gate-emitterthresholdvoltageasafunction

ofjunctiontemperature

(I

C

=1.6mA)

T

vj

,JUNCTIONTEMPERATURE[°C]

V

GE(th)

,GATE-EMITTERTHRESHOLDVOLTAGE[V]

0

25

50

75

100

125

150

175

2.0

3.0

4.0

5.0

6.0

typ.
min.
max.

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9

IGW100N60H3

Highspeedswitchingseriesthirdgeneration

Rev.1.2,2013-02-07

Figure 13.

Typicalswitchingenergylossesasa

functionofcollectorcurrent

(inductiveload,T

vj

=175°C,V

CE

=400V,

V

GE

=15/0V,r

G

=3.5

,Dynamictestcircuitin

Figure E)

I

C

,COLLECTORCURRENT[A]

E

,SWITCHINGENERGYLOSSES[mJ]

0

20

40

60

80 100 120 140 160 180 200

0

5

10

15

20

E

off

E

on

E

ts

Figure 14.

Typicalswitchingenergylossesasa

functionofgateresistor

(inductiveload,T

vj

=175°C,V

CE

=400V,

V

GE

=15/0V,I

C

=100A,Dynamictestcircuitin

Figure E)

r

G

,GATERESISTOR[

]

E

,SWITCHINGENERGYLOSSES[mJ]

0

5

10

15

20

25

30

0

5

10

15

20

25

30

E

off

E

on

E

ts

Figure 15.

Typicalswitchingenergylossesasa

functionofjunctiontemperature

(inductiveload,V

CE

=400V,V

GE

=15/0V,

I

C

=100A,r

G

=3.5

,Dynamictestcircuitin

Figure E)

T

vj

,JUNCTIONTEMPERATURE[°C]

E

,SWITCHINGENERGYLOSSES[mJ]

25

50

75

100

125

150

175

0

1

2

3

4

5

6

7

8

E

off

E

on

E

ts

Figure 16.

Typicalswitchingenergylossesasa

functionofcollectoremittervoltage

(inductiveload,T

vj

=175°C,V

GE

=15/0V,

I

C

=100A,r

G

=3.5

,Dynamictestcircuitin

Figure E)

V

CE

,COLLECTOR-EMITTERVOLTAGE[V]

E

,SWITCHINGENERGYLOSSES[mJ]

200

250

300

350

400

450

0

1

2

3

4

5

6

7

8

9

E

off

E

on

E

ts

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10

IGW100N60H3

Highspeedswitchingseriesthirdgeneration

Rev.1.2,2013-02-07

Figure 17.

Typicalgatecharge

(I

C

=100A)

Q

GE

,GATECHARGE[nC]

V

GE

,GATE-EMITTERVOLTAGE[V]

0

100

200

300

400

500

600

0

5

10

15

120V
480V

Figure 18.

Typicalcapacitanceasafunctionof

collector-emittervoltage

(V

GE

=0V,f=1MHz)

V

CE

,COLLECTOR-EMITTERVOLTAGE[V]

C

,CAPACITANCE[pF]

0

5

10

15

20

25

30

10

100

1000

1E+4

C

iss

C

oss

C

rss

Figure 19.

Typicalshortcircuitcollectorcurrentasa

functionofgate-emittervoltage

(V

CE

400V,T

vj

150°C)

V

GE

,GATE-EMITTERVOLTAGE[V]

I

C(SC)

,SHORTCIRCUITCOLLECTORCURRENT[A]

10

12

14

16

18

20

0

200

400

600

800

1000

1200

1400

1600

Figure 20.

Shortcircuitwithstandtimeasafunctionof

gate-emittervoltage

(V

CE

400V,startatT

vj

150°C)

V

GE

,GATE-EMITTERVOLTAGE[V]

t

SC

,SHORTCIRCUITWITHSTANDTIME[µs]

10

11

12

13

14

15

4

5

6

7

8

9

10

11

12

13

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Infineon Technologies
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