P o w e r M a n a g e m e n t & M u l t i m a r k e t
S i C
Silicon Carbide Diode
F i n a l D a t a s h e e t
Rev. 2.0,<2012-03-23>
t h i n Q !
T M
S i C S c h o t t k y D i o d e
1200V SiC Schottky Diode
I D W 1 0 S 1 2 0
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2012-03-23
1
Description
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1)
for target applications
Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Applications
SMPS; CCM PFC
Solar applications; UPS; Motor Drives
Table 1
Key Performance Parameters
Parameter
Value
Unit
V
DC
1200
V
Q
C
@ V
R
=400V
36
nC
I
F
@ T
c
< 140°C
10
A
Table 2
Pin Definition
Pin 1
Pin 2
Pin 3
n.c.
C
A
Type / ordering Code
Package
Marking
Related links
IDW10S120
PG-TO247-3
D10S120
www.infineon.com/sic
IDW10S120
th
inQ!™ SiC Schottky Diode
1
2
3
1
2
3
CASE
The 1200V family of Infineon SiC Schottky diodes has emerged over the
years as the industry standard and is now being extended with the
IDWxxS120 product family in the TO247 package.
The very good thermal characteristics of the TO247 in combination with
the low V
f
of the 1200V diodes make it particularly suitable in power
applications where relatively high currents are demanded and utmost
efficiency is required. With the introduction of this package, Infineon now
offers a current capability of up to 30A in the 1200V range.
thinQ!
TM
SiC Schottky Diode
IDW10S120
Table of contents
Final Data Sheet
3
Rev. 2.0, 2012-03-23
Table of Contents
1
Description .......................................................................................................................................... 2
2
Maximum ratings ................................................................................................................................ 4
3
Thermal characteristics ..................................................................................................................... 4
4
Electrical characteristics ................................................................................................................... 5
5
Electrical characteristics diagrams .................................................................................................. 6
6
Package outlines ................................................................................................................................ 8
7
Revision History ................................................................................................................................. 9
thinQ!
TM
SiC Schottky Diode
IDW10S120
Maximum ratings
Final Data Sheet
4
Rev. 2.0, 2012-03-23
2
Maximum ratings
Table 3
Maximum ratings
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
Continuous forward current
I
F
–
–
10
A
T
C
< 140°C, D=1
Surge non-repetitive forward current,
sine halfwave
I
F,SM
–
–
53
T
C
= 25°C, t
p
=10 ms
–
–
44
T
C
= 150°C, t
p
=10 ms
Non-repetitive peak forward current I
F,max
–
–
266
T
C
= 25°C, t
p
=10 µs
i²t value
∫ i²dt
–
–
14
A²s
T
C
= 25°C, t
p
=10 ms
–
–
10
T
C
= 150°C, t
p
=10 ms
Repetitive peak reverse voltage
V
RRM
–
–
1200
V
Diode dv/dt ruggedness
dv/dt
–
–
50
V/ns
V
R
=0..480 V
Power dissipation
P
tot
–
–
115
W
T
C
= 25°C
Operating and storage temperature T
j
;T
stg
-55
–
175
°C
Mounting torque
–
–
60
Ncm
M3 and M3.5 screws
3
Thermal characteristics
Table 4
Thermal characteristics TO-247-3
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
Thermal resistance, junction-case
R
thJC
–
–
1.30
K/W
Thermal resistance, junction-
ambient
R
thJA
–
–
62
leaded
Soldering temperature,
wavesoldering only allowed at leads
T
sold
–
–
260
°C
1.6mm (0.063 in.) from
case for 10 s
thinQ!
TM
SiC Schottky Diode
IDW10S120
Electrical characteristics
Final Data Sheet
5
Rev. 2.0, 2012-03-23
4
Electrical characteristics
Table 5
Static characteristics
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
DC blocking voltage
V
DC
1200
–
–
V
I
R
= 0.24 mA, T
j
= 25°C
Diode forward voltage
V
F
–
1.5
1.8
I
F
= 10 A, T
j
=25°C
–
2.4
–
I
F
= 10 A, T
j
=150°C
Reverse current
I
R
–
5
240
µA
V
R
=1200 V, T
j
=25°C
–
20
500
V
R
=1200 V, T
j
=150°C
Table 6
AC characteristics
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
Total capacitive charge
Q
c
–
36
–
nC
V
R
=400 V, di/dt=200A/µs,
I
F
≤I
F,MAX
, T
j
=150°C.
55
–
V
R
=1000 V, di/dt=200A/µs,
I
F
≤I
F,MAX
, T
j
=150°C.
Total Capacitance
C
–
580
–
pF
V
R
=1 V, f=1 MHz
–
50
–
V
R
=300 V, f=1 MHz
–
40
–
V
R
=600 V, f=1 MHz
thinQ!
TM
SiC Schottky Diode
IDW10S120
Electrical characteristics diagrams
Final Data Sheet
6
Rev. 2.0, 2012-03-23
5
Electrical characteristics diagrams
Table 7
Power dissipation
Diode forward current
0
20
40
60
80
100
120
140
25
50
75
100
125
150
175
P
to
t
[W
]
T
C
[
°C]
0
10
20
30
40
50
60
70
80
25
50
75
100
125
150
175
I
F
[A
]
T
C
[
°C]
0.1
0.3
0.5
0.7
1
P
tot
=f(T
C
); R
thJC,max
I
F
=f(T
C
); T
j
≤175°C; R
thJC,max
; parameter D=duty cycle
Table 8
Typical forward characteristics
Typ. reverse current vs. reverse voltage
0
2
4
6
8
10
12
14
16
18
20
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
I
F
[
A
]
V
F
[V]
1.E-9
1.E-8
1.E-7
1.E-6
1.E-5
1.E-4
200
400
600
800
1000
1200
I
R
[A
]
V
R
[V]
I
F
=f(V
F
); t
p
=200 µs; parameter: T
j
I
R
=f(V
R
); parameter: T
j
;
-55°C
25°C
100°C
150°C
175°C
-55°C
25°C
100°C
150°C
175°C
thinQ!
TM
SiC Schottky Diode
IDW10S120
Electrical characteristics diagrams
Final Data Sheet
7
Rev. 2.0, 2012-03-23
Table 9
Typ. capacitance charge vs. current slope
1)
Max. transient thermal impedance
0
5
10
15
20
25
30
35
40
100
300
500
700
900
Q
C
[n
C
]
dI
F
/dt [A/µs]
0.01
0.1
1
1.E-06
1.E-03
1.E+00
Z
th
,j
c
[K
/W
]
t
p
[s]
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Q
C
=f(di
F
/dt); V
R
=400V; T
j
=150°C; I
F
≤I
F,max
Z
th,jc
=f(t
P
); parameter: D=t
P
/T
1) Only capacitive charge, guaranteed by design.
Table 10
Typ. capacitance stored energy
Typ. capacitance vs. reverse voltage
0
5
10
15
20
25
30
0
200
400
600
800
1000
1200
E
C
[µJ
]
V
R
[V]
0
100
200
300
400
500
600
700
800
0.1
1
10
100
1000
C
[p
F
]
V
R
[V]
E
C
=f(V
R
)
C=f(V
R
); T
j
=25°C; f=1 MHz
thinQ!
TM
SiC Schottky Diode
IDW10S120
Package outlines
Final Data Sheet
8
Rev. 2.0, 2012-03-23
6
Package outlines
Figure 1
Outlines TO-247, dimensions in mm/inches
thinQ!
TM
SiC Schottky Diode
IDW10S120
Revision History
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Edition 2012-03-23
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (
www.infineon.com
).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
Final Data Sheet
9
Rev. 2.0, 2012-03-23
7
Revision History
thinQ!
TM
SiC Schottky Diode
Revision History: 2012-03-23, Rev. 2.0
Previous Revision:
Revision
Subjects (major changes since last version)
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