September 2008
Sensors
Final
Datasheet
Rev.1.0
TLE4946-2K
High Precision Hall Effect Latch
TLE4946-2K
Edition 2008-09-18
Published by
Infineon Technologies AG
81726 München, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
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).
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TLE4946-2K High Precision Hall Effect Latch
Revision History: 2008-09-18, Rev.1.0
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FinalDatasheet
3
Rev.1.0, 2008-09-18
TLE4946-2K
FinalDatasheet
4
Rev.1.0, 2008-09-18
TLE4946-2K
1
Product Description 5
1.1
Overview 5
1.2
Features 5
1.3
Target Applications 5
2
Functional Description 5
2.1
General 5
2.2
Pin Configuration 6
2.3
Pin Description 6
2.4
Block Diagram 6
2.5
Operating Modes and States 7
2.6
Functional Block Description 7
3
Specification 8
3.1
Absolute Maximum Ratings 8
3.2
Operating Range 9
3.3
Characteristics 9
4
Package Information 10
4.1
Package Outline 10
Product Name
Product Type
Ordering Code
Package
Hall Effect Latch
TLE4946-2K
SP000472424
SC59
FinalDatasheet
5
Rev.1.0, 2008-09-18
High Precision Hall Effekt Latch
TLE4946-2K
1
Product Description
1.1
Overview
The TLE4946-2K is a high precision Hall effect latch
with highly accurate switching thresholds for operating
temperatures up to 150°C.
1.2
Features
•
2.7 V to 24 V supply voltage operation
•
Operation from unregulated power supply
•
High sensitivity and high stability of the magnetic switching points
•
High resistance to mechanical stress by active error compensation
•
Reverse battery protection (– 18V)
•
Superior temperature stability
•
Peak temperatures up to 195°C without damage
•
Low jitter (typ. 1 µs)
•
High ESD performance (± 4kV HBM)
•
Digital output signal
•
SMD package SC59
1.3
Target Applications
The TLE4946-2K is an integrated circuit Hall-effect sensor with low switching thresholds and low hysteresis which
make it ideally suited to detect the rotor position in a BLDC motor commutation application.
2
Functional Description
2.1
General
Precise magnetic switching thresholds and high temperature stability are achieved by active compensation circuits
and chopper techniques on chip. Offset voltages, generated by temperature induced stress or overmolding are
canceled and high accuracy is achieved. The IC has an open collector output stage with 20mA current sink
capability. A wide operating voltage range form 2.7V to 18V with reverse polarity protection up to -18V makes the
device suitable for a wide range of applications. A magnetic south pole with field strength above B
op
turns the
output on and a magnetic north pole exceeding B
rp
turns it off.
FinalDatasheet
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Rev.1.0, 2008-09-18
TLE4946-2K
Functional Description
2.2
Pin Configuration
Center of
Sensitive Area
1
± 0.15
1.5
± 0.15
0.8
2
3
SC59
Figure 1
Pin Configuration and sensitive area (Top View, Figure not to Scale)
2.3
Pin Description
Table 1
Pin Description
Pin or Ball
No.
Name
Pin
Type
Function
Comments
1
Vs
I
Supply voltage
2
Q
O
Output
3
GND
I
Ground
2.4
Block Diagram
Ref
Chopped
Hall Probe
V
S
Q
GND
Amplifier
Low
Pass
Filter
Comparator
with
Hysteresis
Voltage Regulator
reverse polarity protected
Oscillator
and
Sequencer
Bias and
Compensation
Circuits
Figure 2
TLE4946-2K Block Diagram
FinalDatasheet
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Rev.1.0, 2008-09-18
TLE4946-2K
Functional Description
2.5
Operating Modes and States
Field Direction Definition:
Positive magnetic fields are related with the south pole of the magnet to the branded side of package.
Applied
Magnetic
Field
90%
10%
V
Q
t
f
t
d
t
r
t
d
B
OP
B
RP
Figure 3
Timing diagram
V
Q
B
op
B
rp
0
B
Figure 4
Output Signal
2.6
Functional Block Description
The chopped Hall IC switch comprises a Hall probe, bias generator, compensation circuits, oscillator and output
transistor.
The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the
temperature behavior and reduce technology variations.
The Active Error Compensation rejects offsets in signal stages and the influence of mechanical stress to the Hall
probe caused by molding and soldering processes and other thermal stresses in the package.
This chopper technique together with the threshold generator and the comparator ensure high accurate magnetic
switching points
FinalDatasheet
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Rev.1.0, 2008-09-18
TLE4946-2K
Specification
3
Specification
3.1
Absolute Maximum Ratings
Table 2
Absolute Maximum Ratings
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
Max. junction temperature
T
J
-40
–
150
°C
–
–
155
for 2000 h (not additive)
–
–
165
for 1000 h (not additive)
–
–
175
for 168 h (not additive)
–
–
195
for 3 x 1 h (additive)
Supply voltage
V
DD
-18
-18
-18
–
–
–
18
24
26
V
for 1h, R
s
≥ 200Ω
for 5min, R
s
≥ 200Ω
Supply current through
protection device
I
S
– 50
–
+ 50
mA
Output voltage
V
Q
-0.7
–
18
V
-0.7
–
26
for 5min @ 1.2k
Ω pull
up
Storage temperature
T
S
– 40
–
150
°C
Magnetic flux density
B
–
unlimited mT
ESD robustness
HBM: 1.5 k
Ω, 100 pF
V
ESD,HBM
4
kV
According to
EIA/JESD22-A114-B
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
FinalDatasheet
9
Rev.1.0, 2008-09-18
TLE4946-2K
Specification
3.2
Operating Range
The following operating conditions must not be exceeded in order to ensure correct operation of the TLE4946-2K.
All parameters specified in the following sections refer to these operating conditions unless otherwise mentioned.
Table 3
Operating Range
Parameter
Symbol
Values
Unit
Note/ Test Condition
Min.
Typ.
Max.
Supply voltage
V
S
2.7
–
18
V
Output voltage
V
Q
– 0.7
–
18
V
Junction temperature
T
j
– 40
–
150
°C
Output current
I
Q
0
–
20
mA
3.3
Characteristics
Product characteristics involve the spread of values guaranteed within the specified voltage and ambient
temperature range. Typical characteristics are the median of the production (at V
s
= 12V and T
A
= 25°C ).
Table 4
Electrical Characteristics
Parameter
Symbol
Values
Unit
Note/ Test Condition
Min.
Typ.
Max.
Supply current
I
S
2
4
6
mA
V
S
= 2.7 V ... 18 V
Reverse current
I
SR
0
0.2
1
mA
V
S
= – 18 V
Output saturation voltage
V
QSAT
–
0.3
0.6
V
I
Q
= 20 mA
Output leakage current
I
QLEAK
–
0.05
10
µA
for V
Q
= 18 V
Output fall time
t
f
–
0.02
1
µs
R
L
= 1.2 k
Ω;
C
L
= 50 pF
Output rise time
t
r
–
0.4
1
µs
Chopper frequency
f
OSC
–
320
–
kHz
Switching frequency
f
SW
0
–
15
1) To operate the sensor at the max. switching frequency, the value of the magnetic signal amplitude must be 1.4 times higher
than for static fields.
This is due to the - 3 dB corner frequency of the low pass filter in the signal path.
1)
kHz
Delay time
2) Systematic delay between magnetic threshold reached and output switching
2)
t
d
–
13
–
µs
Output jitter
3) Jitter is the unpredictable deviation of the output switching delay
3)
t
QJ
–
1
–
µs
RMS
Typical value for
square wave signal
1 kHz
Power-on time
4) Time from applying
V
S
≥ 2.7 V to the sensor until the output state is valid
4)
t
PON
–
13
–
µs
V
S
≥ 2.7 V
Thermal resistance
5) Thermal resistance from junction to ambient
5)
R
thJA
–
100
K/W
Table 5
Magnetic Characteristics
Parameter
Symbol
Values
Unit
Note/ Test Condition
Min.
Typ.
Max.
Operate point
B
OP
0.5
2.0
3.5
mT
Release point
B
RP
-3.5
-2.0
-0.5
mT
Hysteresis
B
HYS
1.0
4
6.0
mT
B
OFF
-1.5
0
1.5
mT
Temperature compensation of
magn. thresholds
TC
-350
ppm/°C
Repeatability of magnetic
thresholds
2) B
REP
is equivalent to the noise constant
2)
B
REP
20
µT
RMS
FinalDatasheet
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Rev.1.0, 2008-09-18
TLE4946-2K
Package Information
4
Package Information
4.1
Package Outline
AEA03244
Branded Side
d: Distance chip to upper side of IC:
d
d = 0.56
±0.1
mm
06
Year (y) = 0...9
Month (m) = 1...9,
O - October
N - November
D - December
y
m
46 2
Figure 5
Marking of TLE4946-2K and distance of chip to upper side of IC
Magnetic Offset
1)
1) B
off
= (B
op
+ B
rp
)/2