IGBT
Highspeed5IGBTinTRENCHSTOP
TM
technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKP15N65H5
650VDuoPackIGBTandDiode
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
2
IKP15N65H5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Highspeed5IGBTinTRENCHSTOP
TM
technologycopackedwithRAPID1
fastandsoftantiparalleldiode
FeaturesandBenefits:
HighspeedH5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowQ
G
•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Solarconverters
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
G
C
E
G
C E
C
KeyPerformanceandPackageParameters
Type
V
CE
I
C
V
CEsat
,T
vj
=25°C
T
vjmax
Marking
Package
IKP15N65H5
650V
15A
1.65V
175°C
K15EH5
PG-TO220-3
3
IKP15N65H5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
4
IKP15N65H5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CE
650
V
DCcollectorcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
I
C
30.0
18.0
A
Pulsedcollectorcurrent,t
p
limitedbyT
vjmax
I
Cpuls
45.0
A
TurnoffsafeoperatingareaV
CE
≤
650V,T
vj
≤
175°C
-
45.0
A
Diodeforwardcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
I
F
20.0
12.0
A
Diodepulsedcurrent,t
p
limitedbyT
vjmax
I
Fpuls
45.0
A
Gate-emitter voltage
V
GE
±20
V
PowerdissipationT
C
=25°C
PowerdissipationT
C
=100°C
P
tot
105.0
52.5
W
Operating junction temperature
T
vj
-40...+175
°C
Storage temperature
T
stg
-55...+150
°C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
260
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Symbol Conditions
Max.Value
Unit
Characteristic
IGBT thermal resistance,
junction - case
R
th(j-c)
1.40
K/W
Diode thermal resistance,
junction - case
R
th(j-c)
2.90
K/W
Thermal resistance
junction - ambient
R
th(j-a)
62
K/W
5
IKP15N65H5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
StaticCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V,I
C
=0.20mA
650
-
-
V
Collector-emitter saturation voltage
V
CEsat
V
GE
=15.0V,I
C
=15.0A
T
vj
=25°C
T
vj
=125°C
T
vj
=175°C
-
-
-
1.65
1.85
1.95
2.10
-
-
V
Diode forward voltage
V
F
V
GE
=0V,I
F
=9.0A
T
vj
=25°C
T
vj
=125°C
T
vj
=175°C
-
-
-
1.45
1.40
1.40
1.80
-
-
V
Gate-emitter threshold voltage
V
GE(th)
I
C
=0.15mA,V
CE
=V
GE
3.2
4.0
4.8
V
Zero gate voltage collector current
I
CES
V
CE
=650V,V
GE
=0V
T
vj
=25°C
T
vj
=175°C
-
-
-
-
40.0
4000.0
µA
Gate-emitter leakage current
I
GES
V
CE
=0V,V
GE
=20V
-
-
100
nA
Transconductance
g
fs
V
CE
=20V,I
C
=15.0A
-
22.0
-
S
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
DynamicCharacteristic
Input capacitance
C
ies
-
930
-
Output capacitance
C
oes
-
24
-
Reverse transfer capacitance
C
res
-
4
-
V
CE
=25V,V
GE
=0V,f=1MHz
pF
Gate charge
Q
G
V
CC
=520V,I
C
=15.0A,
V
GE
=15V
-
38.0
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
L
E
-
7.0
-
nH
SwitchingCharacteristic,InductiveLoad
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
IGBTCharacteristic,atT
vj
=25°C
Turn-on delay time
t
d(on)
-
17
-
ns
Rise time
t
r
-
7
-
ns
Turn-off delay time
t
d(off)
-
160
-
ns
Fall time
t
f
-
10
-
ns
Turn-on energy
E
on
-
0.12
-
mJ
Turn-off energy
E
off
-
0.05
-
mJ
Total switching energy
E
ts
-
0.17
-
mJ
T
vj
=25°C,
V
CC
=400V,I
C
=7.5A,
V
GE
=0.0/15.0V,
R
G(on)
=39.0
Ω
,R
G(off)
=39.0
Ω
,
L
σ
=30nH,C
σ
=30pF
L
σ
,C
σ
fromFig.E
Energy losses include “tail” and
diode reverse recovery.
6
IKP15N65H5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Turn-on delay time
t
d(on)
-
16
-
ns
Rise time
t
r
-
3
-
ns
Turn-off delay time
t
d(off)
-
138
-
ns
Fall time
t
f
-
20
-
ns
Turn-on energy
E
on
-
0.04
-
mJ
Turn-off energy
E
off
-
0.02
-
mJ
Total switching energy
E
ts
-
0.06
-
mJ
T
vj
=25°C,
V
CC
=400V,I
C
=2.0A,
V
GE
=0.0/15.0V,
R
G(on)
=39.0
Ω
,R
G(off)
=39.0
Ω
,
L
σ
=30nH,C
σ
=30pF
L
σ
,C
σ
fromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atT
vj
=25°C
Diode reverse recovery time
t
rr
-
48
-
ns
Diode reverse recovery charge
Q
rr
-
0.20
-
µC
Diode peak reverse recovery current
I
rrm
-
8.0
-
A
Diode peak rate of fall of reverse
recoverycurrentduringt
b
di
rr
/dt
-
-200
-
A/µs
T
vj
=25°C,
V
R
=400V,
I
F
=7.5A,
di
F
/dt=1000A/µs
Diode reverse recovery time
t
rr
-
25
-
ns
Diode reverse recovery charge
Q
rr
-
0.09
-
µC
Diode peak reverse recovery current
I
rrm
-
6.7
-
A
Diode peak rate of fall of reverse
recoverycurrentduringt
b
di
rr
/dt
-
-500
-
A/µs
T
vj
=25°C,
V
R
=400V,
I
F
=2.0A,
di
F
/dt=1000A/µs
SwitchingCharacteristic,InductiveLoad
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
IGBTCharacteristic,atT
vj
=150°C
Turn-on delay time
t
d(on)
-
16
-
ns
Rise time
t
r
-
8
-
ns
Turn-off delay time
t
d(off)
-
180
-
ns
Fall time
t
f
-
16
-
ns
Turn-on energy
E
on
-
0.18
-
mJ
Turn-off energy
E
off
-
0.08
-
mJ
Total switching energy
E
ts
-
0.26
-
mJ
T
vj
=150°C,
V
CC
=400V,I
C
=7.5A,
V
GE
=0.0/15.0V,
R
G(on)
=39.0
Ω
,R
G(off)
=39.0
Ω
,
L
σ
=30nH,C
σ
=30pF
L
σ
,C
σ
fromFig.E
Energy losses include “tail” and
diode reverse recovery.
Turn-on delay time
t
d(on)
-
14
-
ns
Rise time
t
r
-
4
-
ns
Turn-off delay time
t
d(off)
-
220
-
ns
Fall time
t
f
-
30
-
ns
Turn-on energy
E
on
-
0.06
-
mJ
Turn-off energy
E
off
-
0.03
-
mJ
Total switching energy
E
ts
-
0.09
-
mJ
T
vj
=150°C,
V
CC
=400V,I
C
=2.0A,
V
GE
=0.0/15.0V,
R
G(on)
=39.0
Ω
,R
G(off)
=39.0
Ω
,
L
σ
=30nH,C
σ
=30pF
L
σ
,C
σ
fromFig.E
Energy losses include “tail” and
diode reverse recovery.
7
IKP15N65H5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
DiodeCharacteristic,atT
vj
=150°C
Diode reverse recovery time
t
rr
-
74
-
ns
Diode reverse recovery charge
Q
rr
-
0.42
-
µC
Diode peak reverse recovery current
I
rrm
-
11.0
-
A
Diode peak rate of fall of reverse
recoverycurrentduringt
b
di
rr
/dt
-
-160
-
A/µs
T
vj
=150°C,
V
R
=400V,
I
F
=7.5A,
di
F
/dt=1000A/µs
Diode reverse recovery time
t
rr
-
42
-
ns
Diode reverse recovery charge
Q
rr
-
0.21
-
µC
Diode peak reverse recovery current
I
rrm
-
10.5
-
A
Diode peak rate of fall of reverse
recoverycurrentduringt
b
di
rr
/dt
-
-310
-
A/µs
T
vj
=150°C,
V
R
=400V,
I
F
=2.0A,
di
F
/dt=1000A/µs
8
IKP15N65H5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Figure 1.
Forwardbiassafeoperatingarea
(D=0,T
C
=25°C,T
vj
≤
175°C;V
GE
=15V.
RecommendeduseatV
GE
≥
7.5V)
V
CE
,COLLECTOR-EMITTERVOLTAGE[V]
I
C
,COLLECTORCURRENT[A]
1
10
100
1000
0.1
1
10
t
p
=1µs
10µs
50µs
100µs
200µs
500µs
DC
Figure 2.
Powerdissipationasafunctionofcase
temperature
(T
vj
≤
175°C)
T
C
,CASETEMPERATURE[°C]
P
tot
,POWERDISSIPATION[W]
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
90
100
110
Figure 3.
Collectorcurrentasafunctionofcase
temperature
(V
GE
≥
15V,T
vj
≤
175°C)
T
C
,CASETEMPERATURE[°C]
I
C
,COLLECTORCURRENT[A]
25
50
75
100
125
150
175
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
27.5
30.0
Figure 4.
Typicaloutputcharacteristic
(T
vj
=25°C)
V
CE
,COLLECTOR-EMITTERVOLTAGE[V]
I
C
,COLLECTORCURRENT[A]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
5
10
15
20
25
30
35
40
45
V
GE
=20V
18V
12V
10V
8V
7V
6V
5V
4V
9
IKP15N65H5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Figure 5.
Typicaloutputcharacteristic
(T
vj
=150°C)
V
CE
,COLLECTOR-EMITTERVOLTAGE[V]
I
C
,COLLECTORCURRENT[A]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
5
10
15
20
25
30
35
40
45
V
GE
=20V
18V
12V
10V
8V
7V
6V
5V
4V
Figure 6.
Typicaltransfercharacteristic
(V
CE
=20V)
V
GE
,GATE-EMITTERVOLTAGE[V]
I
C
,COLLECTORCURRENT[A]
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
0
5
10
15
20
25
30
35
40
45
T
j
=25°C
T
j
=150°C
Figure 7.
Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(V
GE
=15V)
T
vj
,JUNCTIONTEMPERATURE[°C]
V
CEsat
,COLLECTOR-EMITTERSATURATION[V]
0
25
50
75
100
125
150
175
0.75
1.00
1.25
1.50
1.75
2.00
2.25
I
C
=3,8A
I
C
=7,5A
I
C
=15A
Figure 8.
Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,T
vj
=150°C,V
CE
=400V,
V
GE
=15/0V,r
G
=39
Ω
,Dynamictestcircuitin
Figure E)
I
C
,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
0
5
10
15
20
25
30
35
40
45
1
10
100
1000
t
d(off)
t
f
t
d(on)
t
r
10
IKP15N65H5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Figure 9.
Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,T
vj
=150°C,V
CE
=400V,
V
GE
=15/0V,I
C
=7,5A,Dynamictestcircuitin
Figure E)
r
G
,GATERESISTOR[
Ω
]
t,SWITCHINGTIMES[ns]
5
15
25
35
45
55
65
75
85
1
10
100
1000
t
d(off)
t
f
t
d(on)
t
r
Figure 10.
Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,V
CE
=400V,V
GE
=15/0V,
I
C
=7,5A,r
G
=39
Ω
,Dynamictestcircuitin
Figure E)
T
vj
,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25
50
75
100
125
150
175
1
10
100
1000
t
d(off)
t
f
t
d(on)
t
r
Figure 11.
Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(I
C
=0.15mA)
T
vj
,JUNCTIONTEMPERATURE[°C]
V
GE(th)
,GATE-EMITTERTHRESHOLDVOLTAGE[V]
0
25
50
75
100
125
150
175
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
typ.
min.
max.
Figure 12.
Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,T
vj
=150°C,V
CE
=400V,
V
GE
=15/0V,r
G
=39
Ω
,Dynamictestcircuitin
Figure E)
I
C
,COLLECTORCURRENT[A]
E
,SWITCHINGENERGYLOSSES[mJ]
0
5
10
15
20
25
30
35
40
45
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
E
off
E
on
E
ts