Datasheet IKN65F5

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IGBT

Highspeed5FASTIGBTinTRENCHSTOP

TM

5technologycopackedwithRAPID1

fastandsoftantiparalleldiode

IKP08N65F5

650VDuoPackIGBTandDiode

Highspeedswitchingseriesfifthgeneration

Datasheet

IndustrialPowerControl

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2

IKP08N65F5

Highspeedswitchingseriesfifthgeneration

Rev.2.1,2015-05-05

Highspeed5FASTIGBTinTRENCHSTOP

TM

5technologycopackedwith

RAPID1fastandsoftantiparalleldiode

FeaturesandBenefits:

HighspeedF5technologyoffering

•Best-in-Classefficiencyinhardswitchingandresonant

topologies

•650Vbreakdownvoltage

•LowQ

G

•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode

•Maximumjunctiontemperature175°C

•QualifiedaccordingtoJEDECfortargetapplications

•Pb-freeleadplating;RoHScompliant

•CompleteproductspectrumandPSpiceModels:

http://www.infineon.com/igbt/

Applications:

•Solarconverters

•Uninterruptiblepowersupplies

•Weldingconverters

•Midtohighrangeswitchingfrequencyconverters

G

C

E

G

C E

C

KeyPerformanceandPackageParameters

Type

V

CE

I

C

V

CEsat

,T

vj

=25°C

T

vjmax

Marking

Package

IKP08N65F5

650V

8A

1.6V

175°C

K08EEF5

PG-TO220-3

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3

IKP08N65F5

Highspeedswitchingseriesfifthgeneration

Rev.2.1,2015-05-05

TableofContents

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

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4

IKP08N65F5

Highspeedswitchingseriesfifthgeneration

Rev.2.1,2015-05-05

MaximumRatings

Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter

Symbol

Value

Unit

Collector-emitter voltage

V

CE

650

V

DCcollectorcurrent,limitedbyT

vjmax

T

C

=25°C

T

C

=100°C

I

C

18.0
11.0

A

Pulsedcollectorcurrent,t

p

limitedbyT

vjmax

I

Cpuls

24.0

A

TurnoffsafeoperatingareaV

CE

650V,T

vj

175°C

-

24.0

A

Diodeforwardcurrent,limitedbyT

vjmax

T

C

=25°C

T

C

=100°C

I

F

20.0
12.0

A

Diodepulsedcurrent,t

p

limitedbyT

vjmax

I

Fpuls

24.0

A

Gate-emitter voltage

TransientGate-emittervoltage(t

p

10µs,D<0.010)

V

GE

±20
±30

V

PowerdissipationT

C

=25°C

PowerdissipationT

C

=100°C

P

tot

70.0
35.0

W

Operating junction temperature

T

vj

-40...+175

°C

Storage temperature

T

stg

-55...+150

°C

Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s

260

°C

Mounting torque, M3 screw
Maximum of mounting processes: 3

M

0.6

Nm

ThermalResistance

Parameter

Symbol Conditions

Max.Value

Unit

Characteristic

IGBT thermal resistance,
junction - case

R

th(j-c)

2.20

K/W

Diode thermal resistance,
junction - case

R

th(j-c)

2.90

K/W

Thermal resistance
junction - ambient

R

th(j-a)

62

K/W

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5

IKP08N65F5

Highspeedswitchingseriesfifthgeneration

Rev.2.1,2015-05-05

ElectricalCharacteristic,atT

vj

=25°C,unlessotherwisespecified

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

StaticCharacteristic

Collector-emitter breakdown voltage

V

(BR)CES

V

GE

=0V,I

C

=0.20mA

650

-

-

V

Collector-emitter saturation voltage

V

CEsat

V

GE

=15.0V,I

C

=8.0A

T

vj

=25°C

T

vj

=125°C

T

vj

=175°C

-
-
-

1.60
1.80
1.90

2.10

-
-

V

Diode forward voltage

V

F

V

GE

=0V,I

F

=9.0A

T

vj

=25°C

T

vj

=125°C

T

vj

=175°C

-
-
-

1.45
1.40
1.40

1.80

-
-

V

Gate-emitter threshold voltage

V

GE(th)

I

C

=0.08mA,V

CE

=V

GE

3.2

4.0

4.8

V

Zero gate voltage collector current

I

CES

V

CE

=650V,V

GE

=0V

T

vj

=25°C

T

vj

=175°C

-
-

-
-

40.0

4000.0

µA

Gate-emitter leakage current

I

GES

V

CE

=0V,V

GE

=20V

-

-

100

nA

Transconductance

g

fs

V

CE

=20V,I

C

=8.0A

-

17.0

-

S

ElectricalCharacteristic,atT

vj

=25°C,unlessotherwisespecified

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

DynamicCharacteristic

Input capacitance

C

ies

-

500

-

Output capacitance

C

oes

-

16

-

Reverse transfer capacitance

C

res

-

3

-

V

CE

=25V,V

GE

=0V,f=1MHz

pF

Gate charge

Q

G

V

CC

=520V,I

C

=8.0A,

V

GE

=15V

-

22.0

-

nC

Internal emitter inductance
measured 5mm (0.197 in.) from
case

L

E

-

7.0

-

nH

SwitchingCharacteristic,InductiveLoad

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

IGBTCharacteristic,atT

vj

=25°C

Turn-on delay time

t

d(on)

-

10

-

ns

Rise time

t

r

-

5

-

ns

Turn-off delay time

t

d(off)

-

116

-

ns

Fall time

t

f

-

20

-

ns

Turn-on energy

E

on

-

0.07

-

mJ

Turn-off energy

E

off

-

0.02

-

mJ

Total switching energy

E

ts

-

0.09

-

mJ

T

vj

=25°C,

V

CC

=400V,I

C

=4.0A,

V

GE

=0.0/15.0V,

R

G(on)

=48.0

,R

G(off)

=48.0

,

L

σ

=30nH,C

σ

=30pF

L

σ

,C

σ

fromFig.E

Energy losses include “tail” and
diode reverse recovery.

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6

IKP08N65F5

Highspeedswitchingseriesfifthgeneration

Rev.2.1,2015-05-05

Turn-on delay time

t

d(on)

-

9

-

ns

Rise time

t

r

-

3

-

ns

Turn-off delay time

t

d(off)

-

129

-

ns

Fall time

t

f

-

35

-

ns

Turn-on energy

E

on

-

0.04

-

mJ

Turn-off energy

E

off

-

0.02

-

mJ

Total switching energy

E

ts

-

0.06

-

mJ

T

vj

=25°C,

V

CC

=400V,I

C

=2.0A,

V

GE

=0.0/15.0V,

R

G(on)

=48.0

,R

G(off)

=48.0

,

L

σ

=30nH,C

σ

=30pF

L

σ

,C

σ

fromFig.E

Energy losses include “tail” and
diode reverse recovery.

DiodeCharacteristic,atT

vj

=25°C

Diode reverse recovery time

t

rr

-

41

-

ns

Diode reverse recovery charge

Q

rr

-

0.14

-

µC

Diode peak reverse recovery current

I

rrm

-

6.6

-

A

Diode peak rate of fall of reverse

recoverycurrentduringt

b

di

rr

/dt

-

-160

-

A/µs

T

vj

=25°C,

V

R

=400V,

I

F

=4.0A,

di

F

/dt=800A/µs

Diode reverse recovery time

t

rr

-

27

-

ns

Diode reverse recovery charge

Q

rr

-

0.10

-

µC

Diode peak reverse recovery current

I

rrm

-

6.2

-

A

Diode peak rate of fall of reverse

recoverycurrentduringt

b

di

rr

/dt

-

-300

-

A/µs

T

vj

=25°C,

V

R

=400V,

I

F

=2.0A,

di

F

/dt=800A/µs

SwitchingCharacteristic,InductiveLoad

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

IGBTCharacteristic,atT

vj

=150°C

Turn-on delay time

t

d(on)

-

9

-

ns

Rise time

t

r

-

6

-

ns

Turn-off delay time

t

d(off)

-

145

-

ns

Fall time

t

f

-

18

-

ns

Turn-on energy

E

on

-

0.10

-

mJ

Turn-off energy

E

off

-

0.03

-

mJ

Total switching energy

E

ts

-

0.13

-

mJ

T

vj

=150°C,

V

CC

=400V,I

C

=4.0A,

V

GE

=0.0/15.0V,

R

G(on)

=48.0

,R

G(off)

=48.0

,

L

σ

=30nH,C

σ

=30pF

L

σ

,C

σ

fromFig.E

Energy losses include “tail” and
diode reverse recovery.

Turn-on delay time

t

d(on)

-

9

-

ns

Rise time

t

r

-

4

-

ns

Turn-off delay time

t

d(off)

-

165

-

ns

Fall time

t

f

-

25

-

ns

Turn-on energy

E

on

-

0.06

-

mJ

Turn-off energy

E

off

-

0.02

-

mJ

Total switching energy

E

ts

-

0.08

-

mJ

T

vj

=150°C,

V

CC

=400V,I

C

=2.0A,

V

GE

=0.0/15.0V,

R

G(on)

=48.0

,R

G(off)

=48.0

,

L

σ

=30nH,C

σ

=30pF

L

σ

,C

σ

fromFig.E

Energy losses include “tail” and
diode reverse recovery.

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7

IKP08N65F5

Highspeedswitchingseriesfifthgeneration

Rev.2.1,2015-05-05

DiodeCharacteristic,atT

vj

=150°C

Diode reverse recovery time

t

rr

-

56

-

ns

Diode reverse recovery charge

Q

rr

-

0.27

-

µC

Diode peak reverse recovery current

I

rrm

-

7.5

-

A

Diode peak rate of fall of reverse

recoverycurrentduringt

b

di

rr

/dt

-

-134

-

A/µs

T

vj

=150°C,

V

R

=400V,

I

F

=4.0A,

di

F

/dt=800A/µs

Diode reverse recovery time

t

rr

-

42

-

ns

Diode reverse recovery charge

Q

rr

-

0.19

-

µC

Diode peak reverse recovery current

I

rrm

-

7.4

-

A

Diode peak rate of fall of reverse

recoverycurrentduringt

b

di

rr

/dt

-

-240

-

A/µs

T

vj

=150°C,

V

R

=400V,

I

F

=2.0A,

di

F

/dt=800A/µs

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8

IKP08N65F5

Highspeedswitchingseriesfifthgeneration

Rev.2.1,2015-05-05

Figure 1.

Forwardbiassafeoperatingarea

(D=0,T

C

=25°C,T

vj

175°C;V

GE

=15V.

RecommendeduseatV

GE

7.5V)

V

CE

,COLLECTOR-EMITTERVOLTAGE[V]

I

C

,COLLECTORCURRENT[A]

1

10

100

1000

0.1

1

10

t

p

=1µs

10µs

50µs

100µs

200µs

500µs

DC

Figure 2.

Powerdissipationasafunctionofcase

temperature

(T

vj

175°C)

T

C

,CASETEMPERATURE[°C]

P

tot

,POWERDISSIPATION[W]

25

50

75

100

125

150

175

0

10

20

30

40

50

60

70

80

Figure 3.

Collectorcurrentasafunctionofcase

temperature

(V

GE

15V,T

vj

175°C)

T

C

,CASETEMPERATURE[°C]

I

C

,COLLECTORCURRENT[A]

25

50

75

100

125

150

175

0

2

4

6

8

10

12

14

16

18

Figure 4.

Typicaloutputcharacteristic

(T

vj

=25°C)

V

CE

,COLLECTOR-EMITTERVOLTAGE[V]

I

C

,COLLECTORCURRENT[A]

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

3

6

9

12

15

18

21

24

V

GE

=20V

18V

12V

10V

8V

7V

6V

5V

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9

IKP08N65F5

Highspeedswitchingseriesfifthgeneration

Rev.2.1,2015-05-05

Figure 5.

Typicaloutputcharacteristic

(T

vj

=150°C)

V

CE

,COLLECTOR-EMITTERVOLTAGE[V]

I

C

,COLLECTORCURRENT[A]

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

3

6

9

12

15

18

21

24

V

GE

=20V

18V

12V

10V

8V

7V

6V

5V

Figure 6.

Typicaltransfercharacteristic

(V

CE

=20V)

V

GE

,GATE-EMITTERVOLTAGE[V]

I

C

,COLLECTORCURRENT[A]

4

5

6

7

8

9

0

3

6

9

12

15

18

21

24

T

j

=25°C

T

j

=150°C

Figure 7.

Typicalcollector-emittersaturationvoltageas

afunctionofjunctiontemperature

(V

GE

=15V)

T

vj

,JUNCTIONTEMPERATURE[°C]

V

CEsat

,COLLECTOR-EMITTERSATURATION[V]

0

25

50

75

100

125

150

175

0.75

1.00

1.25

1.50

1.75

2.00

I

C

=2A

I

C

=4A

I

C

=8A

Figure 8.

Typicalswitchingtimesasafunctionof

collectorcurrent

(inductiveload,T

vj

=150°C,V

CE

=400V,

V

GE

=15/0V,r

G

=48

,Dynamictestcircuitin

Figure E)

I

C

,COLLECTORCURRENT[A]

t,SWITCHINGTIMES[ns]

0

3

6

9

12

15

18

21

24

1

10

100

t

d(off)

t

f

t

d(on)

t

r

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10

IKP08N65F5

Highspeedswitchingseriesfifthgeneration

Rev.2.1,2015-05-05

Figure 9.

Typicalswitchingtimesasafunctionofgate

resistor

(inductiveload,T

vj

=150°C,V

CE

=400V,

V

GE

=15/0V,I

C

=4A,Dynamictestcircuitin

Figure E)

r

G

,GATERESISTOR[

]

t,SWITCHINGTIMES[ns]

5

15

25

35

45

55

65

75

85

1

10

100

t

d(off)

t

f

t

d(on)

t

r

Figure 10.

Typicalswitchingtimesasafunctionof

junctiontemperature

(inductiveload,V

CE

=400V,V

GE

=15/0V,

I

C

=4A,r

G

=48

,DynamictestcircuitinFigure

E)

T

vj

,JUNCTIONTEMPERATURE[°C]

t,SWITCHINGTIMES[ns]

25

50

75

100

125

150

175

1

10

100

t

d(off)

t

f

t

d(on)

t

r

Figure 11.

Gate-emitterthresholdvoltageasafunction

ofjunctiontemperature

(I

C

=0.08mA)

T

vj

,JUNCTIONTEMPERATURE[°C]

V

GE(th)

,GATE-EMITTERTHRESHOLDVOLTAGE[V]

0

25

50

75

100

125

150

175

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

typ.
min.
max.

Figure 12.

Typicalswitchingenergylossesasa

functionofcollectorcurrent

(inductiveload,T

vj

=150°C,V

CE

=400V,

V

GE

=15/0V,r

G

=48

,Dynamictestcircuitin

Figure E)

I

C

,COLLECTORCURRENT[A]

E

,SWITCHINGENERGYLOSSES[mJ]

0

3

6

9

12

15

18

21

24

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

E

off

E

on

E

ts

Maker
Infineon Technologies
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