Datasheet IH0N135R3

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ResonantSwitchingSeries

ReverseconductingIGBTwithmonolithicbodydiode

IHW30N135R3

Datasheet

IndustrialPowerControl

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2

IHW30N135R3

ResonantSwitchingSeries

Rev.2.2,2015-01-26

ReverseconductingIGBTwithmonolithicbodydiode

Features:

•Offersnewhigherbreakdownvoltageto1350Vforimproved

reliability

•Powerfulmonolithicbodydiodewithlowforwardvoltage

designedforsoftcommutationonly

•TRENCHSTOP

TM

technologyoffering:

-verytightparameterdistribution

-highruggedness,temperaturestablebehavior

-lowV

CEsat

-easyparallelswitchingcapabilityduetopositive

temperaturecoefficientinV

CEsat

•LowEMI

•QualifiedaccordingtoJESD-022fortargetapplications

•Pb-freeleadplating;RoHScompliant

•Halogenfree(accordingtoIEC61249-2-21)

•CompleteproductspectrumandPSpiceModels:

http://www.infineon.com/igbt/

Applications:

•Inductivecooking

•Inverterizedmicrowaveovens

•Resonantconverters

•Softswitchingapplications

Packagepindefinition:

•Pin1-gate

•Pin2&backside-collector

•Pin3-emitter

G

C

E

G

C

E

KeyPerformanceandPackageParameters

Type

V

CE

I

C

V

CEsat

,T

vj

=25°C

T

vjmax

Marking

Package

IHW30N135R3

1350V

30A

1.65V

175°C

H30R1353

PG-TO247-3

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3

IHW30N135R3

ResonantSwitchingSeries

Rev.2.2,2015-01-26

TableofContents

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

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4

IHW30N135R3

ResonantSwitchingSeries

Rev.2.2,2015-01-26

MaximumRatings

Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter

Symbol

Value

Unit

Collector-emitter voltage

V

CE

1350

V

DCcollectorcurrent,limitedbyT

vjmax

T

C

=25°C

T

C

=100°C

I

C

60.0
30.0

A

Pulsedcollectorcurrent,t

p

limitedbyT

vjmax

I

Cpuls

90.0

A

TurnoffsafeoperatingareaV

CE

1350V,T

vj

175°C

-

90.0

A

Diodeforwardcurrent,limitedbyT

vjmax

T

C

=25°C

T

C

=100°C

I

F

60.0
30.0

A

Diodepulsedcurrent,t

p

limitedbyT

vjmax

I

Fpuls

90.0

A

Gate-emitter voltage

TransientGate-emittervoltage(t

p

10µs,D<0.010)

V

GE

±20
±25

V

PowerdissipationT

C

=25°C

PowerdissipationT

C

=100°C

P

tot

349.0
175.0

W

Operating junction temperature

T

vj

-40...+175

°C

Storage temperature

T

stg

-55...+175

°C

Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s

260

°C

Mounting torque, M3 screw
Maximum of mounting processes: 3

M

0.6

Nm

ThermalResistance

Parameter

Symbol Conditions

Max.Value

Unit

Characteristic

IGBT thermal resistance,
junction - case

R

th(j-c)

0.43

K/W

Diode thermal resistance,
junction - case

R

th(j-c)

0.43

K/W

Thermal resistance
junction - ambient

R

th(j-a)

40

K/W

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5

IHW30N135R3

ResonantSwitchingSeries

Rev.2.2,2015-01-26

ElectricalCharacteristic,atT

vj

=25°C,unlessotherwisespecified

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

StaticCharacteristic

Collector-emitter breakdown voltage

V

(BR)CES

V

GE

=0V,I

C

=0.50mA

1350

-

-

V

Collector-emitter saturation voltage

V

CEsat

V

GE

=15.0V,I

C

=30.0A

T

vj

=25°C

T

vj

=125°C

T

vj

=175°C

-
-
-

1.65
1.90
2.00

1.85

-
-

V

Diode forward voltage

V

F

V

GE

=0V,I

F

=30.0A

T

vj

=25°C

T

vj

=125°C

T

vj

=175°C

-
-
-

1.65
1.80
1.90

1.85

-
-

V

Gate-emitter threshold voltage

V

GE(th)

I

C

=0.75mA,V

CE

=V

GE

5.1

5.8

6.4

V

Zero gate voltage collector current

I

CES

V

CE

=1350V,V

GE

=0V

T

vj

=25°C

T

vj

=175°C

-
-

-
-

100.0

2500.0

µA

Gate-emitter leakage current

I

GES

V

CE

=0V,V

GE

=20V

-

-

100

nA

Transconductance

g

fs

V

CE

=20V,I

C

=30.0A

-

25.6

-

S

Integrated gate resistor

r

G

none

ElectricalCharacteristic,atT

vj

=25°C,unlessotherwisespecified

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

DynamicCharacteristic

Input capacitance

C

ies

-

2066

-

Output capacitance

C

oes

-

67

-

Reverse transfer capacitance

C

res

-

58

-

V

CE

=25V,V

GE

=0V,f=1MHz

pF

Gate charge

Q

G

V

CC

=1080V,I

C

=30.0A,

V

GE

=15V

-

263.0

-

nC

Internal emitter inductance
measured 5mm (0.197 in.) from
case

L

E

-

13.0

-

nH

SwitchingCharacteristic,InductiveLoad

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

IGBTCharacteristic,atT

vj

=25°C

Turn-off delay time

t

d(off)

-

337

-

ns

Fall time

t

f

-

47

-

ns

Turn-off energy

E

off

-

1.93

-

mJ

T

vj

=25°C,

V

CC

=600V,I

C

=30.0A,

V

GE

=0.0/15.0V,

R

G(on)

=10.0

,R

G(off)

=10.0

,

L

σ

=220nH,C

σ

=40pF

L

σ

,C

σ

fromFig.E

Energy losses include “tail” and
diode reverse recovery.

Turn-off energy, soft switching

E

off

dv/dt=150.0V/µs

-

0.41

-

mJ

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6

IHW30N135R3

ResonantSwitchingSeries

Rev.2.2,2015-01-26

SwitchingCharacteristic,InductiveLoad

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

IGBTCharacteristic,atT

vj

=175°C

Turn-off delay time

t

d(off)

-

410

-

ns

Fall time

t

f

-

100

-

ns

Turn-off energy

E

off

-

3.50

-

mJ

T

vj

=175°C,

V

CC

=600V,I

C

=30.0A,

V

GE

=0.0/15.0V,

R

G(on)

=10.0

,R

G(off)

=10.0

,

L

σ

=220nH,C

σ

=40pF

L

σ

,C

σ

fromFig.E

Energy losses include “tail” and
diode reverse recovery.

Turn-off energy, soft switching

E

off

dv/dt=150.0V/µs

-

0.82

-

mJ

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7

IHW30N135R3

ResonantSwitchingSeries

Rev.2.2,2015-01-26

Figure 1.

Forwardbiassafeoperatingarea

(D=0,T

C

=25°C,T

vj

175°C;V

GE

=15V)

V

CE

,COLLECTOR-EMITTERVOLTAGE[V]

I

C

,COLLECTORCURRENT[A]

1

10

100

1000

0.1

1

10

100

t

p

=1µs

5µs

10µs

50µs

1ms

10ms

DC

Figure 2.

Powerdissipationasafunctionofcase

temperature

(T

vj

175°C)

T

C

,CASETEMPERATURE[°C]

P

tot

,POWERDISSIPATION[W]

25

50

75

100

125

150

175

0

50

100

150

200

250

300

350

Figure 3.

Collectorcurrentasafunctionofcase

temperature

(V

GE

15V,T

vj

175°C)

T

C

,CASETEMPERATURE[°C]

I

C

,COLLECTORCURRENT[A]

25

50

75

100

125

150

175

0

10

20

30

40

50

60

Figure 4.

Typicaloutputcharacteristic

(T

vj

=25°C)

V

CE

,COLLECTOR-EMITTERVOLTAGE[V]

I

C

,COLLECTORCURRENT[A]

0.0

1.0

2.0

3.0

4.0

0

10

20

30

40

50

60

70

80

90

V

GE

=20V

17V

15V

13V

11V

9V

7V

5V

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8

IHW30N135R3

ResonantSwitchingSeries

Rev.2.2,2015-01-26

Figure 5.

Typicaloutputcharacteristic

(T

vj

=175°C)

V

CE

,COLLECTOR-EMITTERVOLTAGE[V]

I

C

,COLLECTORCURRENT[A]

0

1

2

3

4

0

10

20

30

40

50

60

70

80

90

V

GE

=20V

17V

15V

13V

11V

9V

7V

5V

Figure 6.

Typicaltransfercharacteristic

(V

CE

=20V)

V

GE

,GATE-EMITTERVOLTAGE[V]

I

C

,COLLECTORCURRENT[A]

4

5

6

7

8

9

10

11

12

0

10

20

30

40

50

60

70

80

90

T

j

=25°C

T

j

=175°C

Figure 7.

Typicalcollector-emittersaturationvoltageas

afunctionofjunctiontemperature

(V

GE

=15V)

T

vj

,JUNCTIONTEMPERATURE[°C]

V

CEsat

,COLLECTOR-EMITTERSATURATION[V]

0

25

50

75

100

125

150

175

1.0

1.5

2.0

2.5

3.0

I

C

=15A

I

C

=30A

I

C

=60A

Figure 8.

Typicalswitchingtimesasafunctionof

collectorcurrent

(inductiveload,T

vj

=175°C,V

CE

=600V,

V

GE

=0/15V,R

G(on)

=10

,R

G(off)

=10

,dynamic

test circuit in Figure E)

I

C

,COLLECTORCURRENT[A]

t,SWITCHINGTIMES[ns]

0

10

20

30

40

50

60

10

100

1000

t

d(off)

t

f

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9

IHW30N135R3

ResonantSwitchingSeries

Rev.2.2,2015-01-26

Figure 9.

Typicalswitchingtimesasafunctionofgate

resistance

(inductiveload,T

vj

=175°C,V

CE

=600V,

V

GE

=0/15V,I

C

=30A,dynamictestcircuitin

Figure E)

R

G

,GATERESISTANCE[

]

t,SWITCHINGTIMES[ns]

0

10

20

30

40

50

10

100

1000

t

d(off)

t

f

Figure 10.

Typicalswitchingtimesasafunctionof

junctiontemperature

(inductiveload,V

CE

=600V,V

GE

=0/15V,

I

C

=30A,R

G(on)

=10

,R

G(off)

=10

,dynamic

test circuit in Figure E)

T

vj

,JUNCTIONTEMPERATURE[°C]

t,SWITCHINGTIMES[ns]

25

50

75

100

125

150

175

10

100

1000

t

d(off)

t

f

Figure 11.

Gate-emitterthresholdvoltageasafunction

ofjunctiontemperature

(I

C

=0.75mA)

T

vj

,JUNCTIONTEMPERATURE[°C]

V

GE(th)

,GATE-EMITTERTHRESHOLDVOLTAGE[V]

0

25

50

75

100

125

150

175

2

3

4

5

6

7

8

typ.
min.
max.

Figure 12.

Typicalswitchingenergylossesasa

functionofcollectorcurrent

(inductiveload,T

vj

=175°C,V

CE

=600V,

V

GE

=0/15V,R

G(on)

=10

,R

G(off)

=10

,

dynamic test circuit in Figure E)

I

C

,COLLECTORCURRENT[A]

E

,SWITCHINGENERGYLOSSES[mJ]

0

10

20

30

40

50

60

0

1

2

3

4

5

6

7

E

off

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10

IHW30N135R3

ResonantSwitchingSeries

Rev.2.2,2015-01-26

Figure 13.

Typicalswitchingenergylossesasa

functionofgateresistance

(inductiveload,T

vj

=175°C,V

CE

=600V,

V

GE

=0/15V,I

C

=30A,dynamictestcircuitin

Figure E)

R

G

,GATERESISTANCE[

]

E

,SWITCHINGENERGYLOSSES[mJ]

0

10

20

30

40

50

3.00

3.25

3.50

3.75

4.00

4.25

4.50

4.75

5.00

E

off

Figure 14.

Typicalswitchingenergylossesasa

functionofjunctiontemperature

(inductiveload,V

CE

=600V,V

GE

=0/15V,

I

C

=30A,R

G(on)

=10

,R

G(off)

=10

,dynamic

test circuit in Figure E)

T

vj

,JUNCTIONTEMPERATURE[°C]

E

,SWITCHINGENERGYLOSSES[mJ]

25

50

75

100

125

150

175

1

2

3

4

E

off

Figure 15.

Typicalswitchingenergylossesasa

functionofcollectoremittervoltage

(inductiveload,T

vj

=175°C,V

GE

=0/15V,

I

C

=30A,R

G(on)

=10

,R

G(off)

=10

,dynamic

test circuit in Figure E)

V

CE

,COLLECTOR-EMITTERVOLTAGE[V]

E

,SWITCHINGENERGYLOSSES[mJ]

400

600

800

1000

1200

1400

0

1

2

3

4

5

6

7

8

E

off

Figure 16.

Typicalturnoffswitchingenergylossfor

softswitching

(inductiveload,T

vj

=175°C,V

GE

=0/15V,

I

C

=30A,R

G

=10

,dynamictestcircuitin

Figure E)

dv/dt,VOLTAGESLOPE[V/µs]

E

,SWITCHINGENERGYLOSSES[mJ]

100

1000

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T

j

=°C

T

j

=°C

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