November, 29th 2009
Automotive grade
AUIPS7111S
CURRENT SENSE HIGH SIDE SWITCH
Features
Suitable for 24V systems
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1
Over current shutdown
Over temperature shutdown
Current
sensing
Active
clamp
Low
current
Reverse battery
ESD
protection
Optimized Turn On/Off for EMI
Applications
24V loads for trucks
Description
The AUIPS7111S is a fully protected four terminal high
side switch. It features current sensing, over-current, over-
temperature, ESD protection and drain to source active
clamp. When the input voltage Vcc - Vin is higher than the
specified threshold, the output power Mosfet is turned on.
When the Vcc - Vin is lower than the specified Vil
threshold, the output Mosfet is turned off. The Ifb pin is
used for current sensing.
Product Summary
Rds(on) 7.5 m
max.
Vclamp 65V
Current shutdown 30A min.
Package
D²Pak-5 leads
Typical Connection
Out
IPS
IN
Rifb
Vcc
Load
Battery
Input
Power
Ground
Ifb
Logic
Ground
Current feeback
10k
On
Off
AUIPS7111S
Qualification Information
†
Automotive
(per AEC-Q100
††
)
Qualification Level
Comments: This family of ICs has passed an Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by extension
of the higher Automotive level.
Moisture Sensitivity Level
D2PAK-5L
MSL1,
260°C
(per IPC/JEDEC J-STD-020)
Machine Model
Class M3 (300V)
(per AEC-Q100-003)
Human Body Model
Class H2 (2,500 V)
(per AEC-Q100-002)
ESD
Charged Device Model
Class C4 (1000 V)
(per AEC-Q100-011)
IC Latch-Up Test
Class II, Level A
(per AEC-Q100-004)
RoHS Compliant
Yes
† Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/
†† Exceptions to AEC-Q100 requirements are noted in the qualification report.
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2
AUIPS7111S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. (Tj= -40°C..150°C,
Vcc=8..50V unless otherwise specified).
Symbol Parameter
Min.
Max.
Units
Vout
Maximum output voltage
Vcc-60 Vcc+0.3
V
Vcc-Vin max. Maximum Vcc voltage
-32 60 V
Ifb, max.
Maximum feedback current
-50
10
mA
Maximum power dissipation (internally limited by thermal protection)
Pd
Tambient=25°C, Tj=150°C
Rth=50°C/W D²Pack 6cm² footprint
2.5
W
Tj max.
Max. storage & operating junction temperature
-40
150
°C
Thermal Characteristics
Symbol Parameter
Typ.
Max.
Units
Rth1
Thermal resistance junction to ambient D²Pak Std footprint
60
Rth2
Thermal resistance junction to ambient D²pak 6cm² footprint
40
Rth3
Thermal resistance junction to case D²pak
0.8
°C/W
Recommended Operating Conditions
These values are given for a quick design.
Symbol Parameter
Min.
Max.
Units
Continuous output current, Tambient=85°C, Tj=125°C
Iout
Rth=40°C/W, D²pak 6cm² footprint
10
A
Rifb
1.5
k
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AUIPS7111S
Static Electrical Characteristics
Tj=-40..150°C, Vcc=8..50V (unless otherwise specified)
Symbol Parameter
Min.
Typ.
Max.
Units
Test
Conditions
Vcc op.
Operating voltage range
8
50 V
ON state resistance Tj=25°C
6 7.5
Rds(on)
ON state resistance Tj=150°C
12 15
m
Ids=10A
Icc off
Supply leakage current
2 6
Iout off
Output leakage current
2 6
µA
Vin=Vcc=28V,Vifb=Vgnd
Vout=Vgnd, Tj=25°C
V clamp1
Vcc to Vout clamp voltage 1
60
65
Id=10mA
V clamp2
Vcc to Vout clamp voltage 2
66
Id=10A see fig. 2
Vih(2)
High level Input threshold voltage
5.5 6.8
Id=10mA
Vil(2)
Low level Input threshold voltage
3.5
5
V
Reverse On state resistance Tj=25°C
7 10 m
Rds(on) rev
Reverse On state resistance Tj=150°C
13 18
Isd=10A,
Vcc-Vin=7..32V
Forward body diode voltage Tj=25°C
0.75 0.8
Vf
Forward body diode voltage Tj=125°C
0.6 0.65
V
If=10A
Rin
Internal input resistor
180
250
350
Tj=-40°C..125°C
(2) Input thresholds are measured directly between the input pin and the tab. See also page 6
Switching Electrical Characteristics
Vcc=28V, Resistive load=3
, Tj=25°C
Symbol Parameter
Min.
Typ.
Max.
Units
Test
Conditions
tdon
Turn on delay time to 20%
25
35
50
tr
Rise time from 20% to 80% of Vcc
8
17
25
µs
tdoff
Turn off delay time
50
80
120
tf
Fall time from 80% to 20% of Vcc
5
13
35
µs
See fig. 1
Protection Characteristics
Tj=-40..150°C, Vcc=8..50V (unless otherwise specified)
Symbol Parameter
Min.
Typ.
Max.
Units
Test
Conditions
Tsd
Over temperature threshold
150(3)
165
°C
See fig. 3 and fig. 10
Isd
Over-current shutdown
30
45
60
A
See fig. 3 and page 7
I fault
Ifb after an over-current or an over-
temperature (latched)
2.4 4 6
mA
See fig. 3
Current Sensing Characteristics
Tj=-40..150°C, Vcc=8..50V (unless otherwise specified)
Symbol Parameter
Min.
Typ.
Max.
Units
Test
Conditions
Ratio
I load / Ifb current ratio
11000 13000
14500
Ratio_TC
I load / Ifb variation over temperature
-5%
0
+5
%
Iout=10A
I offset
Load current offset
-0.25
0
0.25
A
Iout<10A
Ifb leakage
Ifb leakage current on
0
6
15
µA
Iout=0A, Tj=25°C
(3) Guaranteed by design
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AUIPS7111S
Lead Assignments
1- In
2- Ifb
3- Vcc
4- Out
5- Out
1 2 4 5
D²Pak - 5 leads
3- Vcc
Functional Block Diagram
All values are typical
Diag
Charge
Pump
Driver
Reverse
Battery
Protection
IFB OUT
VCC
75V
250
Tj > 165°C
Iout > 45A
58V
75V
-
+
75V
3mA
IN
Set
Reset
Latch
Q
+
-
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5
AUIPS7111S
Truth Table
Op. Conditions
Input
Output
Ifb pin voltage
Normal mode
H
L
0V
Normal mode
L
H
I load x Rfb / Ratio
Open load
H
L
0V
Open load
L
H
Ifb leakage x Rifb
Short circuit to GND
H
L
0V
Short circuit to GND
L
L
I fault x Rifb (latched)
Over temperature
H
L
0V
Over temperature
L
L
I fault x Rifb (latched)
Operating voltage
Maximum Vcc voltage : this is the maximum voltage before the breakdown of the IC process.
Operating voltage : This is the Vcc range in which the functionality of the part is guaranteed. The AEC-Q100 qualification
is run at the maximum operating voltage specified in the datasheet.
Reverse battery
During the reverse battery the Mosfet is turned on if the input pin is powered with a diode in parallel of the input transistor.
Power dissipation in the IPS : P = Rdson rev * I load² + Vcc² / 250 ( internal input resistor ).
If the power dissipation I too hight in Rifb, a diode in serial can be added to block the current.
Active clamp
The purpose of the active clamp is to limit the voltage across the MOSFET to a value below the body diode break down
voltage to reduce the amount of stress on the device during switching.
The temperature increase during active clamp can be estimated as follows:
)
t
(
Z
P
CLAMP
TH
CL
Tj
Where:
is the thermal impedance at t
CLAMP
and can be read from the thermal impedance curves given in the
data sheets.
)
t
(
Z
CLAMP
TH
CLavg
CL
CL
I
V
P
: Power dissipation during active clamp
V
39
V
CL
: Typical V
CLAMP
value
2
I
I
CL
CLavg
: Average current during active clamp
dt
di
I
t
CL
CL
: Active clamp duration
L
V
V
dt
di
CL
Battery
: Demagnetization current
Figure 9 gives the maximum inductance versus the load current in the worst case : the part switch off after an over
temperature detection. If the load inductance exceed the curve, a free wheeling diode is required.
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AUIPS7111S
Input level VIH/VIL
The input level are referenced to Vcc. When Vcc-Vin exceed VIH the part turns on and when Vcc-Vin goes below VIL the
part turns off
Current sensing accuracy
Iout
Ifb
Ifb leakage
Ifb2
Ifb1
Iout2
Iout1
I offset
The current sensing is specified by measuring 3 points :
- Ifb1 for Iout1
- Ifb2 for Iout2
- Ifb leakage for Iout=0
The parameters in the datasheet are computed with the following formula :
Ratio = ( Iout2 – Iout1 )/( Ifb2 – Ifb1)
I offset = Ifb1 x Ratio – Iout1
This allows the designer to evaluate the Ifb for any Iout value using :
Ifb = ( Iout + I offset ) / Ratio if Ifb > Ifb leakage
For some applications, a calibration is required. In that case, the accuracy of the system will depends on the variation of
the I offset and the ratio over the temperature range. The ratio variation is given by Ratio_TC specified in page 4.
The Ioffset variation depends directly of the Rdson :
I offset@-40°C= I offset@25°C / 0.7
I offset@150°C= I offset@25°C / 1.9
Over-current protection
The threshold of the over-current protection is set in order to guaranteed that the device is able to turn on a load with an
inrush current lower than the minimum of Isd. Nevertheless for high current and high temperature the device may switch
off for a lower current due to the over-temperature protection (see Figure 10).
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AUIPS7111S
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8
Vds
Ids
Vcc-Vin
Vcc
Vds clamp
T clamp
See Application Notes to evaluate power dissipation
Vout
Vcc-Vin
80%
20%
80%
20%
Td on
Tr
Td off
Tf
Figure 2 – Active clamp waveforms
Figure 1 – IN rise time & switching definitions
0
5
10
15
20
25
30
-50
0
50
100
150
Tj
Tsd
165°C
Icc off, supply le
akage current
(µ
A)
Ids
Vin
I shutdown
Tshutdown
Vifb
V fault
Tj, junction temperature (°C)
Figure 3 – Protection timing diagram
Figure 4 – Icc off (µA) Vs Tj (°C)
AUIPS7111S
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9
0
1
2
3
4
5
6
-50
-25
0
25
50
75
100
125
150
VIH
VIL
0.01
0.1
1
10
100
1E-4
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
Figure 8 – Transient thermal impedance (°C/W)
Vs time (s)
Zth, transient the
rmal impedance
(°C/W)
Time (s)
50%
10
Rds(on), Drain-to
-Source On
Resi
stance
(Normalized)
0%
150%
200%
-50
0
50
100
150
Figure 7 - Normalized Rds(on) (%) Vs Tj (°C)
Tj, junction temperature (°C)
Tj, junction temperature (°C)
Vih and Vil (V)
0
1
2
3
4
5
0
10
20
30
40
Icc, supply current (µA)
50
Vcc-Vout, supply voltage (V)
Figure 5 – Icc Off(µA) Vs Vcc-Vout (V)
Figure 6 – Vih and Vil (V) Vs Tj (°C)
AUIPS7111S
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10
1
10
100
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
0.1
1
10
100
0
10
20
30
Tsd, time to shut
down(s)
Max. output curr
ent (A)
40
'-40°C
'+25°C
'+125°C
Inductance (µH)
Iout, output current (A)
Figure 10 – Tsd (s) Vs I out (A)
SMD with 6cm²
Figure 9 – Max. Iout (A) Vs inductance (µH)