Data Sheet
1
V1.0, 2007-05-13
Smart High-Side Power Switch
BTS716G
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Data Sheet
2
V1.0, 2007-05-13
Smart High-Side Power Switch
BTS716G
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control and protection circuit
of
channel 2
control and protection circuit
of
channel 3
control and protection circuit
of
channel 4
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Data Sheet
3
V1.0, 2007-05-13
Smart High-Side Power Switch
BTS716G
Pin Definitions and Functions
Pin
Symbol
Function
1,10,
11,12,
15,16,
19,20
V
bb
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
3 IN1
5 IN2
7 IN3
9 IN4
Input 1,2,3,4 activates channel 1,2,3,4 in case
of logic high signal
18 OUT1
17 OUT2
14 OUT3
13 OUT4
Output 1,2,3,4 protected high-side power output
of channel 1,2,3,4. Design the wiring for the
max. short circuit current
4 ST1/2
Diagnostic feedback 1/2,3/4 of channel 1,2,3,4
8
ST3/4
open drain, low on failure
2 GND1/2
Ground of chip 1 (channel 1,2)
6 GND3/4
Ground of chip 2 (channel 3,4)
Pin configuration
(top view)
V
bb
1
•
20 V
bb
GND1/2 2
19 V
bb
IN1 3
18 OUT1
ST1/2 4
17 OUT2
IN2 5
16 V
bb
GND3/4 6
15 V
bb
IN3 7
14 OUT3
ST3/4 8
13 OUT4
IN4 9
12 V
bb
V
bb
10
11 V
bb
Data Sheet
4
V1.0, 2007-05-13
Smart High-Side Power Switch
BTS716G
Parameter Symbol
Values
Unit
Supply voltage (overvoltage protection see page 6)
V
bb
43
V
Supply voltage for full short circuit protection
T
j,start
= -40 ...+150°C
V
bb
36
V
Load current (Short-circuit current, see page 6)
I
L
self-limited
A
Load dump protection
1
)
V
LoadDump
=
V
A
+
V
s
,
V
A
= 13.5 V
R
I
2
)
= 2
Ω, t
d
= 400 ms; IN = low or high,
each channel loaded with
R
L
= 13.5
Ω,
V
Load dump
3
)
60
V
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC)
4)
T
a
= 25°C:
(all channels active)
T
a
= 85°C:
P
tot
3.6
1.9
W
Maximal switchable inductance, single pulse
V
bb
= 12V,
T
j,start
= 150°C
4)
,
see diagrams on page 10
I
L
= 2.3 A,
E
AS
= 76 mJ, 0
Ω one
channel:
I
L
= 3.3 A,
E
AS
= 182 mJ, 0
Ω
two parallel channels:
I
L
= 4.7 A,
E
AS
= 460 mJ, 0
Ω
four parallel channels:
Z
L
21
25
30
mH
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5k
Ω; C=100pF
V
ESD
1.0
4.0
8.0
kV
Input voltage (DC)
see internal circuit diagram page 9
V
IN
-10 ... +16
V
Current through input pin (DC)
Pulsed current through input pin
5
)
Current through status pin (DC)
I
IN
I
IN
I
ST
±0.3
±5.0
±5.0
mA
1
) Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 150
Ω
resistor for the GND connection is recommended.
2)
R
I
= internal resistance of the load dump test pulse generator
3)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4
) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
5
) only for testing
Data Sheet
5
V1.0, 2007-05-13
Smart High-Side Power Switch
BTS716G
Parameter and Conditions
Symbol
Values
Unit
min typ
max
Thermal resistance
junction - soldering point
6)7)
each
channel:
R
thjs
-- --
17
K/W
junction – ambient
6)
@ 6 cm
2
cooling area
one channel active:
all channels active:
R
thja
--
--
--
--
44
35
--
--
--
Electrical Characteristics
Parameter and Conditions,
each of the four channels
Symbol
Values
Unit
at T
j
= -40...+150°C,
V
bb
= 12 V unless otherwise specified
min typ
max
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT);
IL = 2 A
each channel,
T
j
= 25°C:
T
j
= 150°C:
two parallel channels,
T
j
= 25°C:
four parallel channels,
T
j
= 25°C:
see diagram, page 11
R
ON
--
--
--
--
110
210
55
28
140
280
70
35
m
Ω
Nominal load current
one channel active:
two parallel channels active:
four parallel channels active:
Device on PCB
6)
,
T
a = 85°C,
T
j ≤ 150°C
I
L(NOM)
2.3
3.3
4.7
2.6
3.7
5.3
--
--
--
A
Output current
while GND disconnected or pulled up
8
)
;
Vbb = 32 V,
V
IN = 0,
see diagram page 9
I
L(GNDhigh)
-- -- 2
mA
Turn-on time
9
)
IN
to 90%
V
OUT
:
Turn-off time
IN
to 10%
V
OUT
:
R
L
= 12
Ω
t
on
t
off
--
--
100
100
250
270
µs
Slew rate on
9
)
10 to 30%
V
OUT
,
R
L
= 12
Ω: dV/dt
on
0.2 --
1.0
V/
µs
Slew rate off
9
)
70 to 40%
V
OUT
,
R
L
= 12
Ω: -dV/dt
off
0.2 --
1.1
V/
µs
6
) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
7
) Soldering point: upper side of solder edge of device pin 15. See page 14
8
) not subject to production test, specified by design
9
) See timing diagram on page 12.
Data Sheet
6
V1.0, 2007-05-13
Smart High-Side Power Switch
BTS716G
Parameter and Conditions,
each of the four channels
Symbol
Values
Unit
at T
j
= -40...+150°C,
V
bb
= 12 V unless otherwise specified
min typ
max
Operating Parameters
Operating voltage
V
bb(on)
5.5
--
40
V
Undervoltage switch off
10
)
T
j
=-40...25°C:
V
bb(u so)
--
--
4.5
V
T
j
=125°C:
--
-- 4.5
11)
Overvoltage protection
12
)
I
bb
= 40 mA
V
bb(AZ)
41
47
52
V
Standby current
13
)
T
j
=-40°C...25°C
:
V
IN
= 0;
see diagram page 11
T
j
=150°C:
I
bb(off)
--
--
9
--
16
24
µA
T
j
=125°C:
--
--
16
11)
Off-State output current (included in
I
bb(off)
)
V
IN
= 0; each channel
I
L(off)
-- 1 5
µA
Operating current
14)
,
V
IN
= 5V,
I
GND
=
I
GND1
+
I
GND2
,
one channel on:
all channels on:
I
GND
--
--
0.5
1.9
0.9
3.3
mA
Protection Functions
15)
Current limit,
Vout = 0V
,
(see timing diagrams, page 12)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
I
L(lim)
--
--
5
--
9
--
14
--
--
A
Repetitive short circuit current limit,
T
j
=
T
jt
each channel
two,three or four parallel channels
(see timing diagrams, page 12)
I
L(SCr)
--
--
6.5
6.5
--
--
A
Initial short circuit shutdown time
T
j,start
=25°C:
Vout = 0V
(see timing diagrams on page 12)
t
off(SC)
--
2
--
ms
Output clamp (inductive load switch off)
16)
at VON(CL) = Vbb - VOUT
,
IL= 40 mA
V
ON(CL)
41 47 52
V
Thermal overload trip temperature
T
jt
150 -- --
°C
Thermal hysteresis
∆T
jt
-- 10 --
K
10)
is the voltage, where the device doesn´t change it´s switching condition for 15ms after the supply voltage
falling below the lower limit of Vbb(on)
11
) not subject to production test, specified by design
12
) Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 150
Ω
resistor for the GND connection is recommended). See also
V
ON(CL)
in table of protection functions and
circuit diagram on page 9.
13
) Measured with load; for the whole device; all channels off
14
) Add I
ST
, if
I
ST
> 0
15
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
16
) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
V
ON(CL)
Data Sheet
7
V1.0, 2007-05-13
Smart High-Side Power Switch
BTS716G
Parameter and Conditions,
each of the four channels
Symbol
Values
Unit
at T
j
= -40...+150°C,
V
bb
= 12 V unless otherwise specified
min typ
max
Reverse Battery
Reverse battery voltage
17
)
-
V
bb
--
--
32
V
Drain-source diode voltage
(V
out
> V
bb
)
I
L
= - 2.0 A,
T
j
= +150°C
-
V
ON
--
600
--
mV
Diagnostic Characteristics
Open load detection voltage
V
OUT(OL)
1
1.7 2.8 4.0
V
Input and Status Feedback
18
)
Input resistance
(see circuit page 9)
R
I
2.5
4.0 6.0
k
Ω
Input turn-on threshold voltage
V
IN(T+)
-- --
2.5
V
Input turn-off threshold voltage
V
IN(T-)
1.0 -- --
V
Input threshold hysteresis
∆
V
IN(T)
-- 0.2 --
V
Status change after positive input slope
19)
with open load
t
d(STon)
-- 10 20
s
Status change after positive input slope
19)
with overload
t
d(STon)
30 -- --
s
Status change after negative input slope
with open load
t
d(SToff)
--
--
500
s
Status change after negative input slope
19)
with overtemperature
t
d(SToff)
--
--
20
s
Off state input current
V
IN
= 0.4 V:
I
IN(off)
5
-- 20
µA
On state input current
V
IN
= 5 V:
I
IN(on)
10 35 60
µA
Status output (open drain)
Zener limit voltage
I
ST
= +1.6 mA:
ST low voltage
I
ST
= +1.6 mA:
V
ST(high)
V
ST(low)
5.4
--
--
--
--
0.6
V
17
) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and
circuit page 9).
18
) If ground resistors R
GND
are used, add the voltage drop across these resistors.
19
) not subject to production test, specified by design
Data Sheet
8
V1.0, 2007-05-13
Smart High-Side Power Switch
BTS716G
Truth Table
Channel 1 and 2
Chip 1
IN1
IN2
OUT1
OUT2
ST1/2
Channel 3 and 4
(equivalent to channel 1 and 2)
Chip 2
IN3
IN4
OUT3
OUT4
ST3/4
Normal operation
L
L
H
H
L
H
L
H
L
L
H
H
L
H
L
H
H
H
H
H
Open load
Channel 1 (3)
L
H
X
X
Z
H
X
X
L
20
)
H
Channel 2 (4)
X
X
L
H
X
X
Z
H
L
15
)
H
Overtemperature
both channel
L
X
H
L
H
X
L
L
L
L
L
L
H
L
L
Channel 1 (3)
L
H
X
X
L
L
X
X
H
L
Channel 2 (4)
X
X
L
H
X
X
L
L
H
L
L = "Low" Level
X = don't care
Z = high impedance, potential depends on external circuit
H = "High" Level
Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and
outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4
have to be configured as a 'Wired OR' function with a single pull-up resistor.
Terms
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Leadframe (V
bb
) is connected to pin 1,10,11,12,15,16,19,20
External R
GND
optional; two resistors R
GND1
, R
GND2
= 150
Ω or a single resistor R
GND
= 75
Ω for reverse
battery protection up to the max. operating voltage.
20
) L, if potential at the Output exceeds the OpenLoad detection voltage
Data Sheet
9
V1.0, 2007-05-13
Smart High-Side Power Switch
BTS716G
Input circuit (ESD protection),
IN1 to IN4
,1
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5
(6'='
,,
,
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.
Status output,
ST1/2 or ST3/4
67
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='
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5
6721
ESD-Zener diode: 6.1 V typ., max 0.3 mA; R
ST(ON)
< 375
Ω
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.
Inductive and overvoltage output clamp,
OUT1...4
9EE
287
9=
9
21
3RZHU*1'
V
ON
clamped to
V
ON(CL)
= 47 V typ.
Overvolt. and reverse batt. protection
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9
V
Z1
= 6.1 V typ.,
V
Z2
= 47 V typ.,
R
GND
= 150
Ω,
R
ST
= 15 k
Ω, R
I
= 3.5 k
Ω typ.
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active
Open-load detection,
OUT1...4
OFF-state diagnostic condition:
Open Load, if
V
OUT
> 3 V typ.; IN low
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Any kind of load. In case of IN = high is
V
OUT
≈ V
IN
-
V
IN(T+)
.
Due to V
GND
> 0, no V
ST
= low signal available.
Data Sheet
10
V1.0, 2007-05-13
Smart High-Side Power Switch
BTS716G
GND disconnect with GND pull up
352)(7
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Any kind of load. If V
GND
>
V
IN
-
V
IN(T+)
device stays off
Due to V
GND
> 0, no V
ST
= low signal available.
V
bb
disconnect with energized inductive
load
352)(7
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For inductive load currents up to the limits defined by Z
L
(max. ratings and diagram on page 10) each switch is
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
Inductive load switch-off energy
dissipation
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Energy stored in load inductance:
E
L
=
1/2
·
L
·
I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
=
V
ON(CL)
·
i
L
(t) dt,
with an approximate solution for RL > 0 Ω:
E
AS
=
I
L
·
L
2
·
R
L
(
V
bb
+ |V
OUT(CL)
|)
OQ
(1+
I
L
·
R
L
|V
OUT(CL)
|
)
Maximum allowable load inductance for
a single switch off
(one channel)
4)
/ I,/Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
ZL [mH]
IL [A]