BTS712N1.book

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Automotive Power

Data Sheet

Rev 1.3, 2010-03-16

Smart High-Side Power Switch

Smart High-Side Power Switch

PROFET BTS712N1  

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Data Sheet

2

Rev 1.3, 2010-03-16

 

Smart High-Side Power Switch

BTS712N1

Smart Four Channel Highside Power Switch

Features 

 Overload protection 

 Current limitation 

 Short-circuit protection 

 Thermal shutdown 

 Overvoltage protection  

   (including load dump) 

 Fast demagnetization of inductive loads 

 Reverse battery protection

1)

 Undervoltage and overvoltage shutdown 

   with auto-restart and hysteresis

 Open drain diagnostic output  

 Open load detection in OFF-state 

 CMOS compatible input 

 Loss of ground and loss of V

bb

 protection 

Electrostatic discharge (ESD) protection 

Application

• µ

C compatible power switch with diagnostic feedback 

for 12 V and 24 V DC grounded loads 

 All types of resistive, inductive and capacitive loads  

 Replaces electromechanical relays and discrete circuits 

General Description 

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic 
feedback, monolithically integrated in Smart SIPMOS

 technology. 

Providing embedded protective functions. 

Pin Definitions and Functions 

Pin

Symbol

Function

1,10,
11,12,
15,16,
19,20

V

bb

Positive power supply voltage. Design the 

wiring for the simultaneous max. short circuit 
currents from channel 1 to 4 and also for low 
thermal resistance 

3 IN1 

Input 1 .. 4, activates channel 1 .. 4 in case of  

IN2 

logic high signal 

7 IN3 

 

9 IN4 

 

18 OUT1 

Output 1 .. 4, protected high-side power output  

17 

OUT2 

of channel 1 .. 4. Design the wiring for the  

14 

OUT3 

max. short circuit current 

13 OUT4 

 

4 ST1/2 

Diagnostic feedback 1/2 of channel 1 and 

channel 2, open drain, low on failure 

8 ST3/4 

Diagnostic feedback 3/4 of channel 3 and 

channel 4, open drain, low on failure 

2 GND1/2 

Ground 1/2 of chip 1 (channel 1 and channel 2) 

6 GND3/4 

Ground 3/4 of chip 2 (channel 3 and channel 4) 

                                                     

1

)  With external current limit (e.g. resistor R

GND

=150

) in GND connection, resistor in series with ST 

connection, reverse load current limited by connected load. 

Product Summary

 Overvoltage Protection

 

V

bb(AZ)

43

V

Operating voltage

V

bb(on)

5.0 ... 34

V

active channels:    one

two parallel  four parallel

 On-state resistance  R

ON

200 100  50 

m

 Nominal load current

,

/120

1.9 2.8  4.4 

A

Current limitation  

,

/6&U

4 4  4 

A

Pin configuration 

(top view)

V

bb

    1    

 20 V

bb

GND1/2   2 

19 V

bb

IN1   3 

18 OUT1 

ST1/2   4 

17 OUT2 

IN2   5 

16 V

bb

GND3/4   6 

15 V

bb

IN3   7 

14 OUT3 

ST3/4   8 

13 OUT4 

IN4   9 

12 V

bb

V

bb

   10 

11 V

bb

P-DSO-20

PG-DSO20

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Data Sheet

3

Rev 1.3, 2010-03-16

 

Smart High-Side Power Switch

BTS712N1

Block diagram 

Four Channels; Open Load detection in off state;  

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Data Sheet

4

Rev 1.3, 2010-03-16

 

Smart High-Side Power Switch

BTS712N1

Maximum Ratings   at 

T

j

 = 25°C unless otherwise specified

Parameter Symbol 

Values 

Unit

Supply voltage (overvoltage protection see page 4) 

V

bb

 43

V

Supply voltage for full short circuit protection 
T

j,start 

= -40 ...+150°C 

V

bb

34

V

Load current (Short-circuit current, see page 5) 

I

L

 self-limited

A

Load dump protection

2

)

V

LoadDump

 = 

U

A

 + 

V

s

,

U

A

 = 13.5 V 

R

I

3

)

= 2

,

t

d

= 200 ms; IN = low or high,  

  each channel loaded with 

R

L

= 7.1

,

V

Load

dump

4

)

60

V

Operating temperature range 
Storage temperature range 

T

j

T

stg

-40 ...+150
-55 ...+150

°C

Power dissipation (DC)

5

T

a

 = 25°C: 

  (all channels active)

T

a

 = 85°C: 

P

tot

 3.6

1.9

W

Inductive load switch-off energy dissipation, single pulse 
  V

bb

= 12V,

T

j,start

= 150°C

5)

,

  I

L

= 1.9 A, Z

L

= 66 mH, 0

 one 

channel: 

  I

L

= 2.8 A, Z

L

= 66 mH, 0

 

 two parallel channels: 

  I

L

= 4.4 A, Z

L

= 66 mH, 0

  

four parallel channels: 

see diagrams on page 9 

E

AS

150
320
800

mJ

Electrostatic discharge capability (ESD) 
  (Human Body Model) 

V

ESD

 1.0

kV

Input voltage (DC)  

V

IN

 

-10 ... +16

V

Current through input pin (DC) 
Current through status pin (DC) 

see internal circuit diagram page 8

I

IN

I

ST

±

2.0

±

5.0

mA

Thermal resistance 

 

  junction - soldering point

5),6)

 each 

channel: 

R

thjs

16

K/W

  junction - ambient

5)

 

one channel active: 

 

all channels active: 

R

thja

44
35

                                                     

2

)  Supply voltages higher than V

bb(AZ)

 require an external current limit for the GND and status pins, e.g. with a 

150

 resistor in the GND connection and a 15 k

 resistor in series with the status pin. A resistor for input 

protection is integrated. 

3)

R

I

 = internal resistance of the load dump test pulse generator 

4)

V

Load dump

 is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 

5

)  Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

2

 (one layer, 70

µ

m thick) copper area for Vbb

connection. PCB is vertical without blown air. See page 14 

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Data Sheet

5

Rev 1.3, 2010-03-16

 

Smart High-Side Power Switch

BTS712N1

Electrical Characteristics 

Parameter and Conditions, 

each of the four channels

 Symbol 

Values 

Unit

at T

j

 = 25 °C, 

V

bb

 = 12 V unless otherwise specified

min typ 

max

Load Switching Capabilities and Characteristics 

On-state resistance (Vbb to OUT) 
  I

L

 = 1.8 A 

each channel,      

T

j

 = 25°C: 

T

j

 = 150°C: 

 

two parallel channels,   

T

j

 = 25°C: 

 

four parallel channels,   

T

j

 = 25°C: 

R

ON

--

165
320

83
42

200
400

100

50

m

Nominal load current

one channel active: 

two parallel channels active: 

four parallel channels active: 

  Device on PCB

5)

,

T

a

=

 85°C,  

T

j

 150°C 

I

L(NOM)

 1.7 

2.6
4.1

1.9
2.8
4.4

--

A

Output current while GND disconnected or pulled 

up;  V

bb

= 30 V, 

V

IN

= 0, see diagram page 9

I

L(GNDhigh)

-- -- 

10

mA

Turn-on time

to 90% 

V

OUT

:

Turn-off time 

to 10% 

V

OUT

:

R

L

  = 12

,

T

j

 =-40...+150°C 

t

on

t

off

80
80

200
200

400
400

µ

s

Slew rate on  
  10 to 30% 

V

OUT

,

R

L

= 12

,

T

j

 =-40...+150°C: 

d

V

/dt

on

 0.1 -- 1

V/

µ

s

Slew rate off 
  70 to 40% 

V

OUT

,

R

L

= 12

,

T

j

 =-40...+150°C: 

-d

V

/dt

off

 0.1  --  1

V/

µ

s

Operating Parameters

Operating voltage

7

)

T

j

 =-40...+150°C: 

V

bb(on)

 5.0 

-- 

34

V

Undervoltage shutdown  

T

j

 =-40...+150°C: 

V

bb(under)

 3.5 -- 

5.0

V

Undervoltage restart  

T

j

 =-40...+25°C: 

T

j

 =+150°C: 

V

bb(u rst)

 -- 

-- 

5.0
7.0

V

Undervoltage restart of charge pump 
  see diagram page 14

T

j

 =-40...+150°C: 

V

bb(ucp)

 

-- 5.6 7.0

V

Undervoltage hysteresis  

V

bb(under)

 = 

V

bb(u rst)

 - 

V

bb(under)

V

bb(under)

-- 0.2  --

V

Overvoltage shutdown  

T

j

 =-40...+150°C: 

V

bb(over)

 34 

-- 

43

V

Overvoltage restart 

T

j

 =-40...+150°C: 

V

bb(o rst)

  33 -- --

V

Overvoltage hysteresis  

T

j

 =-40...+150°C:

V

bb(over)

-- 0.5  --

V

Overvoltage protection

8

)

T

j

 =-40...+150°C: 

I

bb

= 40 mA 

V

bb(AZ)

 42 

47

--

V

                                                     

7)

  At supply voltage increase up to 

V

bb

= 5.6 V typ without charge pump, 

V

OUT

V

bb

 - 2 V 

8)

see also 

V

ON(CL)

 in circuit diagram on page 8.

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Data Sheet

6

Rev 1.3, 2010-03-16

 

Smart High-Side Power Switch

BTS712N1

Parameter and Conditions, 

each of the four channels

 Symbol 

Values 

Unit

at T

j

 = 25 °C, 

V

bb

 = 12 V unless otherwise specified

min typ 

max

Standby current, all channels off 

T

j

 =25°C

:

  V

IN

= 0

T

j

 =150°C: 

I

bb(off)

 -- 

--

180
160

300
300

µ

A

Operating current 

9)

,

V

IN

= 5V, T

j

 =-40...+150°C 

I

GND

 = 

I

GND1/2

 + 

I

GND3/4

,

one channel on:

  four channels on: 

I

GND

--
--

0.35

1.2

0.8
2.8

mA

Protection Functions

10)

Initial peak short circuit current limit,

  (see timing

 

 

 

 

diagrams, page 1

2

)

each channel, T

j

 =-40°C: 

T

j

 =25°C: 

T

j

 =+150°C: 

I

L(SCp)

 5.5 

4.5
2.5

9.5
7.5
4.5

13
11

7

A

 

two parallel channels 

twice the current of one channel 

 

four parallel channels 

four times the current of one channel

Repetitive short circuit current limit, 

 

 

 

T

j

 = 

T

jt

   

each channel 

 

two parallel channels 

 

four parallel channels 

(see timing diagrams, page 1

2

)

I

L(SCr)

 -- 

--
--

4
4
4

--
--
--

A

Initial short circuit shutdown time 

T

j,start

 =-40°C: 

T

j,start

 = 25°C:

(see page 10 and timing diagrams on page 1

2

)

t

off(SC)

 --

--

48

29

--
--

ms

Output clamp (inductive load switch off)

11)

  at V

ON(CL)

 = V

bb

 - V

OUT

V

ON(CL)

-- 47  --

V

Thermal overload trip temperature 

T

jt

 

150 -- --

°C

Thermal hysteresis 

T

jt

-- 10  --

K

Reverse Battery 

Reverse battery voltage 

12

-

V

bb

 -- 

-- 

32

V

Drain-source diode voltage 

(V

out

> V

bb

)

I

L

= - 1.9 A,

T

j

= +150°C

-

V

ON

 -- 

610 

--

mV

Diagnostic Characteristics 

Open load detection current

I

L(off)

-- 30

--

µ

A

Open load detection voltage

T

j

 =-40..+150°C:

V

OUT(OL)

2 3

4

V

                                                     

9

)

Add

I

ST

, if 

I

ST

 > 0 

10

)  Integrated protection functions are designed to prevent IC destruction under fault conditions described in the 

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not 
designed for continuous repetitive operation. 

11

) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest 

V

ON(CL)

12

)  Requires a 150 

 resistor in GND connection. The reverse load current through the intrinsic drain-source 

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal 
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature 
protection is not active during reverse current operation! Input and Status currents have to be limited (see 
max. ratings page 3 and circuit page 8).

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background image

 

Data Sheet

7

Rev 1.3, 2010-03-16

 

Smart High-Side Power Switch

BTS712N1

Parameter and Conditions, 

each of the four channels

 Symbol 

Values 

Unit

at T

j

 = 25 °C, 

V

bb

 = 12 V unless otherwise specified

min typ 

max

Input and Status Feedback

13

)

 

 

 

Input resistance

(see circuit page 8)

T

j

=-40..+150°C: 

R

I

2.5

3.5 6

k

Input turn-on threshold voltage     

T

j

 =-40..+150°C: 

V

IN(T+)

1.7 -- 

3.5

V

Input turn-off threshold voltage  

T

j

 =-40..+150°C: 

V

IN(T-)

1.5 -- --

V

Input threshold hysteresis 

V

IN(T)

-- 0.5  --

V

 

Off state input current 

 

V

IN

 = 0.4 V:

T

j

 =-40..+150°C: 

I

IN(off)

1

-- 50

µ

A

 

On state input current 

 

V

IN

 = 5 V:

T

j

 =-40..+150°C: 

I

IN(on)

 

20 50 90

µ

A

Delay time for status with open load

(see timing diagrams, page 12)

t

d(ST OL3) 

-- 220

--

µ

s

Status output (open drain)

 

 

 

Zener limit voltage

T

j

 =-40...+150°C, 

I

ST

 = +1.6 mA: 

ST low voltage

T

j

 =-40...+25°C, 

I

ST

 = +1.6 mA: 

 

T

j

 = +150°C, 

I

ST

 = +1.6 mA: 

V

ST(high)

V

ST(low)

5.4

--
--

6.1

--
--

--

0.4
0.6

V

                                                     

13)

If ground resistors R

GND

 are used, add the voltage drop across these resistors. 

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background image

 

Data Sheet

8

Rev 1.3, 2010-03-16

 

Smart High-Side Power Switch

BTS712N1

Truth Table 

Channel 1 and 2 

Chip 1 

IN1

IN2

OUT1

OUT2

ST1/2

ST1/2

Channel 3 and 4 
(equivalent to channel 1 and 2) 

Chip 2 

IN3

IN4

OUT3

OUT4

ST3/4

ST3/4

 

 

 

 

 

BTS 711L1

BTS 712N1

Normal operation

L
L

H
H

L

H

L

H

L
L

H
H

L

H

L

H

H
H
H
H

H
H
H
H

Open load

Channel 1 (3)

L
L

H

L

H

X

Z
Z

H

L

H

X

H(L

14

))

H

L

L

H
H

Channel 2 (4)

L

H

X

L
L

H

L

H

X

Z
Z

H

H(L

14

))

H

L

L

H
H

Short circuit to Vbb

Channel 1 (3)

L
L

H

L

H

X

H
H
H

L

H

X

L

15)

H

H(L

16

))

L

15)

H
H

Channel 2 (4)

L

H

X

L
L

H

L

H

X

H
H
H

L

15)

H

H(L

16

))

L

15)

H
H

Overtemperature

both channel

L

X

H

L

H

X

L
L
L

L
L
L

H

L
L

H

L
L

Channel 1 (3)

L

H

X
X

L
L

X
X

H

L

H

L

Channel 2 (4)

X
X

L

H

X
X

L
L

H

L

H

L

Undervoltage/ Overvoltage

X

X

L

L

H

H

L = "Low" Level 

X = don't care 

Z = high impedance, potential depends on external circuit 

H = "High" Level 

Status signal valid after the time delay shown in the timing diagrams 

Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and 
outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4 
have to be configured as a 'Wired OR' function with a single pull-up resistor.

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Leadframe (V

bb

) is connected to pin 1,10,11,12,15,16,19,20 

External R

GND

 optional; two resistors R

GND1/2

 ,R

GND3/4 

= 150

  or a single resistor R

GND

= 75

  for 

reverse battery protection up to the max. operating voltage. 

                                                     

14

)  With additional external pull up resistor 

15)

An external short of output to V

bb

 in the off state causes an internal current from output to ground. If R

GND

 is 

used, an offset voltage at the GND and ST pins will occur and the V

ST low

 signal may be errorious.

16

)  Low resistance to V

bb

 may be detected by no-load-detection 

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background image

 

Data Sheet

9

Rev 1.3, 2010-03-16

 

Smart High-Side Power Switch

BTS712N1

Input circuit (ESD protection),

  IN1...4 

,1

*1'

,

5

(6'='

,,

,

ESD zener diodes are not to be used as voltage clamp at 
DC conditions. Operation in this mode may result in a drift of 
the zener voltage (increase of up to 1 V).

Status output,

  ST1/2 or ST3/4 

67

*1'

(6'

='

9

5

6721

ESD-Zener diode: 6.1 V typ., max 5.0 mA; R

ST(ON)

 < 380 

at 1.6 mA, ESD zener diodes are not to be used as voltage 
clamp at DC conditions. Operation in this mode may resul

t

in

a drift of the zener voltage (increase of up to 1 V).

Inductive and overvoltage output clamp,

OUT1...4 

9EE

287

352)(7

9=

9

21

3RZHU*1'

V

ON

 clamped to 

V

ON(CL)

= 47 V typ.

Overvoltage protection of logic part

GND1/2 or GND3/4 

9EE

,1

67

67

5

*1'

*1'

5

6LJQDO*1'

/RJLF

9=

,1

5,

9=

V

Z1

= 6.1 V typ., V

Z2

= 47 V typ., R

I

= 3.5 k

 typ.

,

R

GND

= 150 

Reverse battery protection 

*1'

/RJLF

67

5

,1

67

“9

287

/

5

3RZHU*1'

*1'

5

6LJQDO*1'

3RZHU
,QYHUVH

,

5

9EE

'LRGH

R

GND

= 150 

Ω,

R

I

= 3.5 k

 typ

,

Temperature protection is not active during inverse current 
operation.

Open-load detection,

  OUT1...4 

OFF-state diagnostic condition: 

V

OUT

 > 3 V typ.; IN low 

2SHQORDG

GHWHFWLRQ

/RJLF

XQLW

9287

6LJQDO*1'

, /2/

2))

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/Infineon-BTS712N1-DS-v01_03-EN-html.html
background image

 

Data Sheet

10

Rev 1.3, 2010-03-16

 

Smart High-Side Power Switch

BTS712N1

GND disconnect

(channel 1/2 or 3/4)

352)(7

9

,1

67

287

*1'

EE

9EE

,EE

,1

287

9,19,1 967

9

*1'

Any kind of load. In case of IN = high is 

V

OUT

V

IN

-

V

IN(T+)

.

Due to V

GND

> 0, no V

ST

 = low signal available.

GND disconnect with GND pull up

(channel 1/2 or 3/4)

352)(7

9

,1

67

287

*1'

EE

9EE

,1

287

9,1

9,1

967

9*1'

Any kind of load. If V

GND

 > 

V

IN

-

V

IN(T+)

 device stays off 

Due to V

GND

 > 0, no V

ST

 = low signal available.

V

bb

 disconnect with energized inductive 

load

352)(7

9

,1

67

287

*1'

EE

9EE

,1

287

KLJK

For an inductive load current up to the limit defined by EAS

(max. ratings see page 3 and diagram on page 9) each 
switch is protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load the whole load 
current flows through the GND connection.

Inductive load switch-off energy 
dissipation

352)(7

9

,1

67

287

*1'

EE

 

(

(

(

($6

EE

/

5

(/RDG

5/

/

^

/

=

Energy stored in load inductance: 

E

L

 = 

1/2

·

L

·

I

2
L

While demagnetizing load inductance, the energy 
dissipated in PROFET is 

E

AS

= E

bb

 + E

L

 - E

R

=

 

 V

ON(CL)

·

i

L

(t) dt,  

with an approximate solution for RL

>

 0

:

E

AS

=

I

L

·

L

2

·

R

L

(

V

bb

+ |V

OUT(CL)

|)

OQ

(1+ 

I

L

·

R

L

|V

OUT(CL)

|

 )

Maximum allowable load inductance for
a single switch off 

(one channel)

5)

/ I,/

Tj,start = 150°C, Vbb = 12 V, RL = 0

L  [mH] 

 

 

IL  [A] 

Maker
Infineon Technologies
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