Technical Information
MIPAQ™ serve
IFS150V12PT4
preliminary data
prepared by:
PK
date of publication: 2012-05-25
approved by: KS
revision: 2.1
Key data
Power module using IGBT4 technology in sixpack configuration.
Isolated IGBT driver, protection and temperature sensor included.
Topology
B6I
Rated semiconductor data
1200V, 150A
Load type
Inductive, resistive
Typical applications
Industrial drives, UPS, solar
inverters, auxiliary inverters
Sensors and protection
temperature, short circuit,
signal transmission, UVLO
for all power supplies
Interface IGBT
Electrical, 5V-CMOS,
Galvanic Isolation according
to IEC61800-5-1
Standards
IEC61800-5-1, UL94, RoHS
Technical Information
MIPAQ™ serve
IFS150V12PT4
preliminary data
prepared by:
PK
date of publication: 2012-05-25
approved by: KS
revision: 2.1
Electrical data
– power part
min
typ
max
DC link voltage
L
s
= 30nH
-40 < T
vj
< 150°C
0 < I
C turn off
< 2*I
C max
U
DC
850V
V
IGBT continuous DC collector
current
T
case
= 100°C
T
vj
= T
vjop max
I
C nom
150
A
IGBT collector-emitter voltage
T
vj
=25°C
U
CES
1200
V
IGBT collector-emitter
saturation voltage
T
vj
=25°C @ I
C
=150A
T
vj
=150°C @ I
C
=150A
U
CEsat
1,75
2,10
2,15
V
Diode repetitive peak reverse
voltage
T
vj
=25°C
U
RRM
1200
V
Diode forward voltage
T
vj
=25°C @ I
C
=150A
T
vj
=150°C @ I
C
=150A
U
F
1,70
1,65
2,20
V
Operating junction temperature IGBT and Diode
T
vjop
150
°C
Turn on energy loss per pulse
IGBT, U
DC
=600V, I
C
=150A
T
vj
=150°C, di/dt,= 2,8kA/µs
E
on
15,0
mJ
Turn off energy loss per pulse
IGBT, U
DC
=600V, I
C
=150A
T
vj
=150°C, du/dt = 3,5kV/µs
E
off
13,9
mJ
Reverse recovery energy
Diode, U
DC
=600V, I
F
=150A
T
vj
=150°C, di/dt = 2,8kA/µs
E
rec
12,0
mJ
Electrical data
– control part
Auxiliary power supply: IGBT Gate (on X1)
min
typ
max
IGBT driver positive supply
Voltage
U
GS P1,2,3,4
13
16
18
V
Current at f
sw
= 20kHz,
U
GSP1,2,3
= +15V
T
vj
= 25°C
I
GS P1,2,3
19
mA
I
GS P4
31
mA
IGBT driver negative supply
Voltage
U
GS N1,2,3,4
-10
-8
-5
V
Current @ f
sw
= 20kHz,
U
GSN
= -8V
T
vj
= 25°C
|I
GS N1,2,3
|
18
mA
|
I
GS N4
|
23
mA
IGBT driver undervoltage lockout
threshold
For each channel
U
GS_UVLO
10,4
12,6
V
IGBT driver undervoltage lockout
hysteresis
For each channel
U
GS_UVLO_H
0,7
V
Auxiliary power supply: Logic (on X2)
min
typ
max
Logic power supply
Voltage
U
LS
4,5
5
5,5
V
Current @ f
sw
= 20kHz,
U
LS
= +5V
I
LS
55
mA
Logic power supply undervoltage
lockout threshold
U
LS_UVLO
3,5
4,3
V
Logic power supply undervoltage
lockout hysteresis
U
LS_UVLO_H
0,3
V
Technical Information
MIPAQ™ serve
IFS150V12PT4
preliminary data
prepared by:
PK
date of publication: 2012-05-25
approved by: KS
revision: 2.1
Driver logic input/output, protection and sensors (on X2)
min
typ
max
Digital input
(IGBT turn-on/off and
RESET)
High level voltage
U
IN_H
3,5
5,5
V
Low level voltage
U
IN_L
-0,3
1,5
V
Input current per input
I
IN
100
400
µA
Minimum pulse width on /RST
for ENABLE/SHUTDOWN
t
min RST1
40
ns
Minimum pulse width on /RST
for resetting /FLT
BOT
, /FLT
TOP
t
min RST2
500
ns
Digital output level
Open drain, internally pulled
up, max. 10 mA
U
RDYT
,
U
RDYB
,
U
FLTT
,
U
FLTB
,
U
TMP
0
U
LS
V
Digital temperature output
Frequency depends on
measured temperature
f
TMP
0,2
18
kHz
Pulses counted in 100ms
N
20
1800
Minimum pulse width
IGBT-turn-on signal (=high) on
each channel @ U
DC max
t
PW_min
1
µs
Minimum dead time
Between TOP IGBT and BOT
IGBT
t
dead
1
µs
Switching frequency
Each driver channel
f
sw
0
20
kHz
Short circuit protection
Desaturation threshold.
Shutdown when exceeded.
Each channel
U
CE_desat
8,5
9
9,5
V
Reaction time. Shutdown after
short circuit was detected.
Each channel
t
desat
8
µs
Propagation delay
Each channel
t
prop_delay
320
ns
Propagation delay deviation
Between two channels
t
prop delay dev
15
ns
Isolation Management
min
typ
max
Isolation management designed for
U
Line
480
V
RMS
Isolation test voltage
Logic to power side
f=50Hz, t=1s
V
isol
2,5
kV
RMS
Life parts to base plate
F=50Hz, 1=1min
V
isol
2,5
kV
RMS
Comparative tracking index
CTI
225
Clearance distance, including internal
clearance
DIN7984 with flat head,
SKS-5 spring washer,
DIN125 flat washer,
terminal
– terminal
(AC-DC, AC-AC, DC-DC)
l
cl1
11
mm
power side
– heat sink
l
cl2
11
mm
Logic side - heatsink
l
cl3
4,5
mm
Logic side - power side
l
cl4
8
mm
Creepage distance
Under usage of screws according
DIN7984 with flat head,
SKS-5 spring washer,
DIN125 flat washer
terminal
– terminal
(AC-DC, AC-AC, DC-DC)
l
cr1
25
mm
terminal
– heat sink
l
cr2
20
mm
Logic side - heatsink
l
cr3
8,5
mm
Logic side - power side
l
cr4
8
mm
Technical Information
MIPAQ™ serve
IFS150V12PT4
preliminary data
prepared by:
PK
date of publication: 2012-05-25
approved by: KS
revision: 2.1
Environmental conditions
min
typ
max
Storage temperature
T
stg
-40
+125
°C
Operating ambient temperature
f
SW
≤ 20kHz
-40
+65
°C
Humidity
no condensation
Rel. H.
5
85
%
Installation height
1000
m
Vibration
according to IEC60721
12
g
Shock
according to IEC60721
10
g
Protection degree
IP00
Pollution degree
2
Terminal connection torque
Screw M6
M
M6
3,0
6,0
Nm
Mounting torque
Screw M5
M
M5
3,0
6,0
Nm
Dimensions
length x width x height
130 x 103 x 28,5
mm³
Weight
419
g
Thermal data
min
typ
max
Thermal resistance junction to case
Each IGBT
R
thjc_IGBT
0,22
K/W
Thermal resistance junction to case
Each Diode
R
thjc_FWD
0,4
K/W
Thermal resistance case to heatsink
Complete module
R
thch_Module
0,009
K/W
Module
min
typ
max
Stray inductance module
L
sCE
20
nH
Material of module baseplate
Cu
Technical Information
MIPAQ™ serve
IFS150V12PT4
preliminary data
prepared by:
PK
date of publication: 2012-05-25
approved by: KS
revision: 2.1
Digital temperature output
Number of pulses within 100ms
0
100
200
300
400
500
600
700
800
900
1000
-40 -30 -20
-10
0
10
20
30
40
50
60
70
80
90
100
110
120
T
NTC
[°C]
1
/1
0
0
m
s
Output characteristic IGBT
I
C
= f(U
CE
) @ U
GSPx
= 16V
0
30
60
90
120
150
180
210
240
270
300
0
0,5
1
1,5
2
2,5
3
U
CE
[V]
I
C
[
A
]
- - - T
v j
= 150°C
_____
T
v j
= 25°C
Output characteristic IGBT
I
C
= f(U
CE
) @ T
vj
= 150°C
0
30
60
90
120
150
180
210
240
270
300
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
U
CE
[V]
I
C
[
A
]
……..
U
GSPx
= 18V
- - - U
GSPx
= 16V
_____
U
GSPx
= 14V
Switching losses diode
E
rec
= f(I
F
) @ U
CE
= 600V, T
vj
= 150°C
0
2
4
6
8
10
12
14
16
18
0
30
60
90
120
150
180
210
240
270
300
I
F
[A]
E
[
m
J
]
____
E
rec
Forward characteristic diode
I
F
= f(U
F
)
0
30
60
90
120
150
180
210
240
270
300
0
0,2 0,4 0,6 0,8
1
1,2 1,4 1,6 1,8
2
2,2 2,4
U
F
[V]
I
F
[
A
]
- - - T
v j
= 150°C
_____
T
v j
= 25°C
Switching losses IGBT
E
on
= f(I
C
), E
off
= f(I
C
)
U
GSPx
= 16V, U
GSNx
= -8V, T
vj
= 150°C
0
5
10
15
20
25
30
35
40
0
50
100
150
200
250
300
I
C
[A]
E
[mJ]
- - - E
of f
_____
E
on
Technical Information
MIPAQ™ serve
IFS150V12PT4
preliminary data
prepared by:
PK
date of publication: 2012-05-25
approved by: KS
revision: 2.1
Mechanical drawing
Technical Information
MIPAQ™ serve
IFS150V12PT4
preliminary data
prepared by:
PK
date of publication: 2012-05-25
approved by: KS
revision: 2.1
Circuit diagram
V
High voltage
area in grey
Galvanic
Isolation
high voltage area
C
o
n
n
ecto
r
X2
di
gi
tal
I/O
an
d
po
w
er s
up
pl
y
f
or
di
gi
tal
I/O
c
ir
c
ui
t
W
DC+
U
C
o
n
n
ecto
r
X1
po
w
er s
up
pl
y
f
or
IG
B
T
G
ate
NTC
E
ice
DR
IV
E
R
™
T1
E
ice
DR
IV
E
R™
B1
E
ice
DR
IV
E
R™
T2
E
ice
DR
IV
E
R™
B2
E
ice
DR
IV
E
R™
T3
E
ice
DR
IV
E
R™
B3
EiceDRIVER™
HB1H
21
19
17
15
13
11
9
7
GND
GND
GND
GND
GND
GND
GND
GND
22
IN
T3
1
IN
B3
20
IN
T2
2
IN
B2
18
IN
T1
4
IN
B1
14
RDY
T
8
RDY
B
16
/FLT
T
6
/FLT
B
3
/RST
4
T1
pos
1
T1
GND
3
T1
neg
8
7
9
14
13
15
19
21
20
T2
pos
T2
GND
T2
neg
T3
pos
T3
GND
T3
neg
B
pos
B
GND
B
neg
12
V
CC
10
TMP
DC-
5
GND
U
GS P3
= U(T3
pos
)
– U(T3
GND
)
U
GS N3
= U(T3
neg
)
– U(T3
GND
)
U
GS P2
= U(T2
pos
)
– U(T2
GND
)
U
GS N2
= U(T2
neg
)
– U(T2
GND
)
U
GS P1
= U(T1
pos
)
– U(T1
GND
)
U
GS N1
= U(T1
neg
)
– U(T1
GND
)
U
GS P4
= U(B
pos
)
– U(B
GND
)
U
GS N4
= U(B
neg
)
– U(B
GND
)
U
LS
= U(V
CC
)
– U(GND)
U
IN_H
= U(V
INx
)
– U(GND)
for high input signal
IGBT turn-on
U
IN_L
= U(V
INx
)
– U(GND)
for low input signal
IGBT turn-off
U
RDY_T
= U(RDY
T
)
– U(GND)
U
RDY_B
= U(RDY
B
)
– U(GND)
U
FLT_T
= U(/FLT
T
)
– U(GND)
U
FLT_B
= U(/FLT
B
)
– U(GND)
U
TMP
= U(TMP)
– U(GND)
Pin
Datasheet value
Pin
Datasheet value
low voltage area
Connector X1 and X2
Power connector
MIPAQ™serve inside
Further information
X1: Molex Microfit 22 pins
X2: Molex Milligrid 22 pins
All information regarding connectors can be found in AN2009-07
Technical Information
MIPAQ™ serve
IFS150V12PT4
preliminary data
prepared by:
PK
date of publication: 2012-05-25
approved by: KS
revision: 2.1
Nutzungsbedingungen
Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die
Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der
Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. Ihren technischen Abteilungen.
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-
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Terms & Conditions of usage
The data contained in this technical information is exclusively intended for technically trained staff. You and your technical
departments will have to evaluate the suitability of the product for the intended application and the completeness of the product
data with respect to such application.
This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is
granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the
product and its specifications.
Should you require product information in excess of the data given in this product data sheet or which concerns the specific
application of our product, please contact the sales office, which is responsible for you (see www.infineon.com, sales&contact).
For those that are specifically interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please
contact the sales office, which is responsible for you.
Should you intend to use the Product in health or live endangering or life support applications, please notify. Please note, that
for any such applications we urgently recommend
-
to perform joint Risk and Quality Assessments;
-
the conclusion of Quality Agreements;
-
to establish joint measures of an ongoing product survey, and that we may make delivery depended on the realization
of any such measures.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
Sicherheitshinweise
Bevor Sie mit der Installation und dem Betrieb der Baugruppe beginnen, lesen Sie bitte sorgfältig alle Sicherheitshinweise und
Warnungen.
Safety Instructions
Prior to installation and operation, all safety notices and warnings have to be carefully read.