AUIRLL024N
V
DSS
55V
R
DS(on)
max.
0.065
I
D
3.1A
Description
Specifically designed for Automotive applications, this Cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
Features
Advanced Planar Technology
Low
On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
1
2015-10-29
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at
www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter
Max.
Units
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V 4.4
A
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V 3.1
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V 2.5
I
DM
Pulsed Drain Current 12
P
D
@T
A
= 25°C
Maximum Power Dissipation (PCB Mount) 2.1
P
D
@T
A
= 25°C
Maximum Power Dissipation (PCB Mount) 1.0
Linear Derating Factor (PCB Mount) 8.3
W/°C
V
GS
Gate-to-Source Voltage
± 16
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 120
mJ
I
AR
Avalanche Current 3.1
A
dv/dt
Peak Diode Recovery dv/dt 5.0
V/ns
T
J
Operating Junction and
-55 to + 150
°C
T
STG
Storage Temperature Range
W
E
AR
Repetitive Avalanche Energy 0.1
mJ
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter
Typ.
Max.
Units
°C/W
R
JA
Junction-to-Ambient (PCB Mount, steady state) 90
120
R
JA
Junction-to-Ambient (PCB Mount, steady state) 50
60
S
G
SOT-223
AUIRLL024N
D
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
AUIRLL024N
SOT-223
Tape and Reel
2500
AUIRLL024NTR
G D S
Gate Drain Source
D
HEXFET
®
Power MOSFET
AUIRLL024N
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2015-10-29
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L = 25mH, R
G
= 25
, I
AS
= 3.1A. (See fig. 12)
I
SD
1.9A, di/dt 270A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
Pulse width
300µs; duty cycle 2%.
When mounted on FR-4 board using minimum recommended footprint.
When mounted on 1 inch square copper board, for comparison with other SMD devices.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
––– –––
V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.048 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.065
V
GS
= 10V, I
D
= 3.1A
––– ––– 0.080
V
GS
= 5.0V, I
D
= 2.5A
––– ––– 0.100
V
GS
= 4.0V, I
D
= 1.6A
V
GS(th)
Gate Threshold Voltage
1.0
–––
2.0
V V
DS
= V
GS
, I
D
= 250µA
gfs
Forward Trans conductance
3.3
––– –––
S V
DS
= 25V, I
D
= 1.9A
I
DSS
Drain-to-Source Leakage Current
––– ––– 25
µA
V
DS
= 55V, V
GS
= 0V
––– ––– 250
V
DS
= 44V,V
GS
= 0V,T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
–––
––– 100
nA
V
GS
= 16V
Gate-to-Source Reverse Leakage
–––
––– -100
V
GS
= -16V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
––– 10.4 15.6
nC
I
D
= 1.9A
Q
gs
Gate-to-Source Charge –––
1.5
2.3
V
DS
= 44V
Q
gd
Gate-to-Drain Charge
–––
5.5
8.3
V
GS
= 5.0V, See Fig 6 and 13
t
d(on)
Turn-On Delay Time
–––
7.4
–––
ns
V
DD
= 28V
t
r
Rise Time
–––
21
–––
I
D
= 1.9A
t
d(off)
Turn-Off Delay Time
–––
18
–––
R
G
= 24
t
f
Fall Time
–––
25
–––
R
D
= 15
See Fig. 10
C
iss
Input Capacitance
–––
510 –––
pF
V
GS
= 0V
C
oss
Output Capacitance
–––
140 –––
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
–––
58
–––
ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
––– ––– 3.1
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 12
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
–––
1.0
V T
J
= 25°C,I
S
= 1.9A,V
GS
= 0V
t
rr
Reverse Recovery Time
–––
39
58
ns T
J
= 25°C ,I
F
= 1.9A,
Q
rr
Reverse Recovery Charge
–––
63
94
nC di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
AUIRLL024N
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2015-10-29
Fig. 2 Typical Output Characteristics
Fig. 3
Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance
vs. Temperature
Fig. 1 Typical Output Characteristics
1
10
100
0.1
1
10
100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
V , Drain-to-Source Voltage (V)
I
,
D
ra
in
-to
-S
ou
rc
e C
urre
nt
(A
)
DS
D
2.7V
1
10
100
0.1
1
10
100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
V , Drain-to-Source Voltage (V)
I
,
D
ra
in-to
-S
ou
rc
e
C
urre
nt (
A
)
DS
D
2.7V
1
10
100
2
4
6
8
10
12
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I
, D
ra
in-t
o
-S
ou
rc
e C
ur
re
nt
(A
)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20
0
20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R
,
D
ra
in
-to
-S
ou
rc
e
O
n
Re
si
sta
nc
e
(N
or
m
alize
d)
J
D
S
(on)
°
V
=
I =
GS
D
10V
3.1A
AUIRLL024N
4
2015-10-29
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
1
10
100
0
200
400
600
800
1000
V , Drain-to-Source Voltage (V)
C,
Ca
pa
ci
ta
nc
e
(p
F)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
4
8
12
16
20
0
3
6
9
12
15
Q , Total Gate Charge (nC)
V
, Ga
te
-t
o-So
ur
ce
Vol
tag
e
(V
)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
1.9A
V
= 11V
DS
V
= 27V
DS
V
= 44V
DS
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
V ,Source-to-Drain Voltage (V)
I
,
Reve
rs
e Drai
n Cu
rr
ent
(A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
0.1
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I ,
Dr
ain
C
ur
ren
t (
A
)
I ,
Dr
ain
C
ur
ren
t (
A
)
DS
D
100us
1ms
10ms
AUIRLL024N
5
2015-10-29
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
T , Case Temperature ( C)
I
,
D
ra
in
C
urren
t (A)
°
C
D
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
he
rm
al
R
esponse
(Z
)
1
thJ
A
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRLL024N
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2015-10-29
Fig 12a.
Unclamped Inductive Test Circuit
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
RG
IAS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
Fig 13b. Gate Charge Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 13a. Basic Gate Charge Waveform
25
50
75
100
125
150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E
,
S
in
gl
e
P
ul
se A
val
anc
he E
ner
gy (
m
J)
J
AS
°
ID
TOP
BOTTOM
1.4A
2.5A
3.1A
AUIRLL024N
7
2015-10-29
SOT-223(TO-261AA) Part Marking Information
SOT-223 (TO-261AA) Package Outline
(Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
LL024N
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRLL024N
8
2015-10-29
SOT-223(TO-261AA) Tape and Reel (
Dimensions are shown in millimeters (inches)
4.10 (.161)
3.90 (.154)
1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
12.10 (.475)
11.90 (.469)
7.10 (.279)
6.90 (.272)
1.60 (.062)
1.50 (.059)
TYP.
7.55 (.297)
7.45 (.294)
7.60 (.299)
7.40 (.292)
2.30 (.090)
2.10 (.083)
16.30 (.641)
15.70 (.619)
0.35 (.013)
0.25 (.010)
FEED DIRECTION
TR
13.20 (.519)
12.80 (.504)
50.00 (1.969)
MIN.
330.00
(13.000)
MAX.
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
3
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
15.40 (.607)
11.90 (.469)
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
4
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
AUIRLL024N
9
2015-10-29
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level
SOT-223
MSL1
ESD
Machine Model
Class M2 (+/- 150V)
†
AEC-Q101-002
Human Body Model
Class H1A (+/- 500V)
†
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)
†
AEC-Q101-005
RoHS Compliant
Yes
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (
www.infineon.com
).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
10/29/2015
Updated datasheet with corporate template
Corrected ordering table on page 1.
3/25/2014
Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated part marking on page 7
Updated data sheet with new IR corporate template
† Highest passing voltage.