AUIRLL014N Product Datasheet

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AUIRLL014N 

V

DSS 

55V 

R

DS(on)

   max. 

0.14



I

D  

2.0A 

Description 
Specifically designed for Automotive applications, this cellular 
design of HEXFET® Power MOSFETs utilizes the latest 
processing techniques to achieve low on-resistance per silicon 
area. This benefit combined with the fast switching speed and 
ruggedized device design that HEXFET power MOSFETs are 
well known for, provides the designer with an extremely efficient 
and reliable device for use in Automotive and a wide variety of 
other applications 

Features 
  Advanced Planar Technology 

 Low 

On-Resistance 

  Logic Level Gate Drive 

  Dynamic dv/dt Rating 
  150°C Operating Temperature 

 Fast Switching 

  Fully Avalanche Rated 

  Repetitive Avalanche Allowed up to Tjmax 

  Lead-Free, RoHS Compliant 

  Automotive Qualified *  

 

2015-10-29 

HEXFET® is a registered trademark of Infineon. 
*Qualification standards can be found at 

www.infineon.com

 

 

AUTOMOTIVE GRADE 

Symbol Parameter 

Max. 

Units 

I

D

 @ T

A

 = 25°C 

Continuous Drain Current, V

GS

 @ 10V  2.8 

 

I

D

 @ T

A

 = 25°C 

Continuous Drain Current, V

GS

 @ 10V  2.0 

I

D

 @ T

A

 = 70°C 

Continuous Drain Current, V

GS

 @ 10V  1.6 

I

DM 

Pulsed Drain Current  16 

P

D

 @T

A

 = 25°C 

Maximum Power Dissipation (PCB Mount)   2.1 

P

D

 @T

A

 = 25°C 

Maximum Power Dissipation (PCB Mount)     1.0 

  

Linear Derating Factor (PCB Mount)   8.3 

mW/°C 

V

GS 

Gate-to-Source Voltage 

 ± 16 

E

AS  

Single Pulse Avalanche Energy (Thermally Limited)  32 

mJ  

I

AR 

Avalanche Current  2.0 

dv/dt 

Peak Diode Recovery dv/dt  7.2 

V/ns 

T

J  

Operating Junction and 

-55  to + 150 

°C 

T

STG 

Storage Temperature Range 

  

W  

E

AR 

Repetitive Avalanche Energy  0.1 

mJ 

 

Absolute Maximum Ratings 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress 
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not 
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance 
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless 
otherwise specified. 

Thermal Resistance  

Symbol Parameter 

Typ. 

Max. 

Units 

°C/W   

R

JA

 

Junction-to-Ambient (PCB Mount, steady state)  90 

120 

R

JA

  

Junction-to-Ambient (PCB Mount, steady state)  50 

60 

SOT-223 

AUIRLL014N 

Base part number 

Package Type 

Standard Pack 

Orderable Part Number   

Form 

Quantity 

AUIRLL014N 

SOT-223 

Tape and Reel  

2500 

AUIRLL014NTR 

G D S 

Gate Drain Source 

HEXFET

® 

Power MOSFET 

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AUIRLL014N 

 

2015-10-29 

Notes:

 Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11) 

  V

DD

 = 25V, starting T

J

 = 25°C, L = 4.0mH, R

G

 = 25

, I

AS

 = 4.0A. (See fig. 12) 



I

SD

 

2.0A, di/dt 170A/µs, V

DD

 

V

(BR)DSS

, T

J

 

 150°C. 

 Pulse width 

300µs; duty cycle  2%. 

  When mounted on FR-4 board using minimum recommended footprint. 



When mounted on 1 inch square copper board, for comparison with other SMD devices. 

Static @ T

J

 = 25°C (unless otherwise specified) 

  

Parameter Min. 

Typ. 

Max. 

Units 

Conditions 

V

(BR)DSS 

Drain-to-Source Breakdown Voltage 

55 

–––  ––– 

V  V

GS

 = 0V, I

D

 = 250µA 

V

(BR)DSS

/

T

J  

Breakdown Voltage Temp. Coefficient 

–––  0.015  –––  V/°C  Reference to 25°C, I

D

 = 1mA  

R

DS(on) 

    

Static Drain-to-Source On-Resistance     

––– ––– 0.14 

V

GS

 = 10V, I

D

 = 2.0A 

––– ––– 0.20 

V

GS

 = 5.0V, I

D

 = 1.2A 

––– ––– 0.28 

V

GS

 = 4.0V, I

D

 = 1.0A 

V

GS(th) 

Gate Threshold Voltage 

1.0 

––– 

2.0 

V  V

DS

 = V

GS

, I

D

 = 250µA 

gfs 

Forward Trans conductance 

2.3 

–––  ––– 

S  V

DS

 = 25V, I

D

 = 1.0A 

I

DSS 

  

Drain-to-Source Leakage Current   

––– –––  25 

µA 

V

DS

 = 55V, V

GS

 = 0V 

––– ––– 250 

V

DS

 = 44V,V

GS

 = 0V,T

J

 = 150°C 

I

GSS 

  

Gate-to-Source Forward Leakage 

––– 

–––  100 

nA 

V

GS

 = 16V 

Gate-to-Source Reverse Leakage 

––– 

–––  -100 

V

GS

 = -16V 

Dynamic  Electrical Characteristics @ T

J

 = 25°C (unless otherwise specified) 

Q

Total Gate Charge  

––– 

9.5 

14 

nC  

I

D

 = 2.0A 

Q

gs 

Gate-to-Source Charge ––– 

1.1 

1.7 

V

DS

 = 44V 

Q

gd 

Gate-to-Drain Charge 

––– 

3.0 

4.4 

V

GS

 = 10V, See Fig 6 and 9  

t

d(on) 

Turn-On Delay Time 

––– 

5.1 

––– 

ns 

V

DD

 = 28V 

t

Rise Time 

––– 

4.9 

––– 

I

D

 = 2.0A 

t

d(off) 

Turn-Off Delay Time 

––– 

14 

––– 

R

= 6.0



t

Fall Time 

––– 

2.9 

––– 

R

= 14

See Fig. 10 

C

iss 

Input Capacitance 

––– 

230  ––– 

pF   

V

GS

 = 0V 

C

oss 

Output Capacitance 

––– 

66 

––– 

V

DS

 = 25V 

C

rss 

Reverse Transfer Capacitance 

––– 

30 

––– 

ƒ = 1.0MHz, See Fig.5 

Diode Characteristics  

  

        Parameter 

Min.  Typ.  Max.  Units 

Conditions 

I

  

Continuous Source Current  

––– ––– 1.3 

MOSFET symbol 

(Body Diode) 

showing  the 

I

SM 

  

Pulsed Source Current 

––– –––  16 

integral reverse 

(Body Diode)

p-n junction diode. 

V

SD 

Diode Forward Voltage 

––– 

––– 

1.0 

V  T

J

 = 25°C,I

= 2.0A,V

GS

 = 0V 

t

rr  

Reverse Recovery Time  

––– 

41 

61 

ns   T

J

 = 25°C ,I

F

 = 2.0A,  

Q

rr  

Reverse Recovery Charge  

––– 

73 

110 

nC    di/dt = 100A/µs 

t

on 

Forward Turn-On Time 

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 



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AUIRLL014N 

 

2015-10-29 

Fig. 2 Typical Output Characteristics 

Fig. 3 

Typical Transfer Characteristics

 

 

Fig. 4 Normalized On-Resistance 

vs. Temperature 

Fig. 1 Typical Output Characteristics 

1

10

100

0.1

1

10

100

 20µs PULSE WIDTH 
 T   = 25°C

A

J

DS

V      , Drain-to-Source Voltage (V)

 3.0V

                   VGS 

 TOP           15V

                   10V

                   7.0V

                   5.5V

                   4.5V

                   4.0V

                   3.5V

 BOTTOM   3.0V

DI  

  , D

rain

-t

o-

S

ou

rc

e C

urr

en

t (

A

)

1

10

100

0.1

1

10

100

A

DS

V     , Drain-to-Source Voltage (V)

DI   , 

Dr

ai

n-

to

-S

ou

rc

e C

ur

ren

t (

A

)

 20µs PULSE WIDTH 
 T   = 150°C

J

 3.0V

                   VGS 

 TOP           15V

                   10V

                   7.0V

                   5.5V

                   4.5V

                   4.0V

                   3.5V

 BOTTOM   3.0V

1

10

100

3.0

4.0

5.0

6.0

7.0

T  = 25°C

T  = 150°C

J

J

GS

V     , Gate-to-Source Voltage (V)

D

  ,

 Dr

ain-t

o

-S

ou

rc

e C

u

rr

e

n

t (

A

)

A

 V     = 25V
 20µs PULSE WIDTH 

DS

0.0

0.5

1.0

1.5

2.0

-60

-40

-20

0

20

40

60

80

100 120 140 160

J

T   , Junction Temperature (°C)

R    

       

,  Dra

in-to-

S

ou

rce

 On

 Resi

sta

nc

e

DS

(o

n)

(N

or

m

al

ize

d)

 V      = 10V 

GS

A

 I    = 2.0A

D

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AUIRLL014N 

 

2015-10-29 

Fig 5.  Typical Capacitance vs.  
 

      Drain-to-Source Voltage

 

Fig 6.  Typical Gate Charge vs. 
 

      Gate-to-Source Voltage

 

 

 

Fig 8.  Maximum Safe Operating Area  

Fig. 7 Typical Source-to-Drain Diode 

 Forward Voltage 

0

100

200

300

400

1

10

100

C, Ca

pa

ci

ta

nc

(pF

)

DS

V     , Drain-to-Source Voltage (V)

A

V      = 0V,         f = 1MHz
C      = C     + C     ,   C     SHORTED
C      = C
C      = C     + C

GS
iss         gs         gd         ds
rss         gd
oss        ds         gd

iss

oss

rss

0

4

8

12

16

20

0

3

6

9

12

15

Q   , Total Gate Charge (nC)

G

V

    

 , 

G

ate-to-S

ou

rc

e V

ol

tag

(V

)

GS

A

 FOR TEST CIRCUIT  
    SEE FIGURE 9

I    = 2.0A

 V      = 44V
 V      = 28V 

D

DS
DS

0.1

1

10

100

0.4

0.6

0.8

1.0

1.2

1.4

1.6

T  = 25°C

T  = 150°C

J

J

V      = 0V 

GS

V     , Source-to-Drain Voltage (V)

I  

   

Rev

ers

e Dra

in C

urren

t (A)

SD

SD

A

0.1

1

10

100

1

10

100

V     , Drain-to-Source Voltage (V)

DS

I  

 , 

D

ra

in

 C

urre

nt

 (A

)

 OPERATION IN THIS AREA LIMITED
                       BY R

D

DS(on)

 T     = 25°C
 T     = 150°C
 Single Pulse

10µs

100µs

1ms

10ms

A

A
J

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AUIRLL014N 

 

2015-10-29 

Fig 11.  Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

Fig 9b.  Gate Charge Test Circuit 

Fig 10a.  Switching Time Test Circuit 

Fig 10b.  Switching Time Waveforms 

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Fig 9a.  Basic Gate Charge Waveform 

0.1

1

10

100

1000

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

t   , Rectangular Pulse Duration (sec)

1

D = 0.50

0.01

0.02

0.05

0.10

0.20

      SINGLE PULSE
(THERMAL RESPONSE)

A

T

h

er

m

a

l R

e

sp

on

se

 (

Z

  

  

   

)

thJ

A

P

t2

1

t

DM

Notes:                                                                  
1. Duty factor D =  t   / t 

2. Peak T  = P      x Z         + T                                  

1

2

J

DM

thJA

A                          

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AUIRLL014N 

 

2015-10-29 

Fig 12a. 

Unclamped Inductive Test Circuit

 

Fig 12c.  Maximum Avalanche Energy 

Vs. Drain Current 

Fig 12b.  Unclamped Inductive Waveforms 

tp

V

(BR)DSS

I

AS

RG

IAS

0.01

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

0

20

40

60

80

25

50

75

100

125

150

J

E

     ,

   S

in

gle

 P

ul

se

 Av

al

an

ch

e E

ne

rg

y (mJ)

AS

A

Starting T  , Junction Temperature (°C)

 V      = 25V

                    I
TOP            1.8A
                   3.2A
BOTTOM    4.0A

DD

D

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AUIRLL014N 

 

2015-10-29 

Fig 13.  Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

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AUIRLL014N 

 

2015-10-29 

 

 

SOT-223(TO-261AA) Part Marking Information 

SOT-223 (TO-261AA) Package Outline 

(Dimensions are shown in millimeters (inches)

 

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package/

 

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AUIRLL014N 

 

2015-10-29 

SOT-223(TO-261AA) Tape and Reel  (

Dimensions are shown in millimeters (inches)

 

4.10 (.161)
3.90 (.154)

1.85 (.072)
1.65 (.065)

2.05 (.080)
1.95 (.077)

12.10 (.475)
11.90 (.469)

7.10 (.279)
6.90 (.272)

1.60 (.062)
1.50 (.059)
      TYP.

7.55 (.297)
7.45 (.294)

7.60 (.299)
7.40 (.292)

2.30 (.090)
2.10 (.083)

16.30 (.641)
15.70 (.619)

0.35 (.013)
0.25 (.010)

FEED DIRECTION

TR

13.20 (.519)
12.80 (.504)

50.00 (1.969)
      MIN.

330.00
(13.000)
  MAX.

NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.

3

NOTES :
1.   OUTLINE COMFORMS TO EIA-418-1.
2.   CONTROLLING DIMENSION: MILLIMETER..
3.   DIMENSION MEASURED @ HUB.
4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE.

15.40 (.607)
11.90 (.469)

18.40 (.724)
      MAX.

14.40 (.566)
12.40 (.488)

4

4

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package/

 

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AUIRLL014N 

10 

 

2015-10-29 

 

Qualification Information  

Qualification Level 

Automotive 

(per AEC-Q101)  

Comments: This part number(s) passed Automotive qualification. Infineon’s  
Industrial and Consumer qualification level is granted by extension of the higher 
Automotive level. 

 Moisture Sensitivity Level   

SOT-223 

MSL1 

ESD 

Machine Model  

Class M1A (+/- 50V)

 

 

AEC-Q101-002 

Human Body Model  

Class H0 (+/- 250V)

†  

AEC-Q101-001 

Charged Device Model 

Class C5 (+/- 1125V)

 

 

AEC-Q101-005 

RoHS Compliant 

Yes 

Published by 
Infineon Technologies AG 
81726 München, Germany 

© 

Infineon Technologies AG 2015 

All Rights Reserved. 
 
IMPORTANT NOTICE
 
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics 
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any 
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and 
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third 
party.  
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this 
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of 
the product of Infineon Technologies in customer’s applications.  
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of 
customer’s technical departments to evaluate the suitability of the product for the intended application and the 
completeness of the product information given in this document with respect to such application.   
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest 
Infineon Technologies office (

www.infineon.com

). 

WARNINGS 
Due to technical requirements products may contain dangerous substances. For information on the types in question 
please contact your nearest Infineon Technologies office. 
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized 
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a 
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.  

Revision History  

Date Comments 

10/29/2015 



Updated datasheet with corporate template 



Corrected ordering table on page 1. 

3/25/2014 



Added  "Logic Level Gate Drive" bullet in the features section on page 1 



Updated  part marking on page 8 



Updated data sheet with new IR corporate template 

†  Highest passing voltage. 

Maker
Infineon Technologies